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At least 55 records · Page 3

Silicon Ingot Casting - Heat Exchanger Method (HEM). Multi-Wire Slicing - Fixed Abrasive Slicing Technique (Fast). Phase 4 Silicon Sheet Growth Development for the Large Area Sheet Task of the Low-Cost Solar Array Project

The crystallinity of large HEM silicon ingots as a function of heat flow conditions is investigated. A balanced heat flow at the bottom of the ingot restricts spurious nucleation to the edge of the melted-back seed in contact with the crucible. Homogeneous resistivity distribution over all the ingot has been achieved. The positioning of diamonds electroplated on wirepacks used to slice silicon crystals is considered. The electroplating of diamonds on only the cutting edge is described and the improved slicing performance of these wires evaluated. An economic analysis of value added costs of HEM ingot casting and band saw sectioning indicates the projected add on cost of HEM is well below the 1986 allocation.

Schmid, F.↗

Structures and Mechanical Properties of Natural and Synthetic Diamonds

A revolution in the diamond technology is in progress, as the low-pressure process becomes an industrial reality. It will soon be possible to take advantage of the demanding properties of diamond to develop a myriad of new applications, particularly for self-lubricating, wear-resistant, and superhard coatings. The production of large diamond films or sheets at low cost, a distinct possibility in the not-too-distant future, may drastically change tribology technology, particularly regarding solid lubricants and lubricating materials and systems. This paper reviews the structures and properties of natural and synthetic diamonds to gain a better understanding of the tribological properties of diamond and related materials. Atomic and crystal structure, impurities, mechanical properties, and indentation hardness of diamond are described.

Miyoshi, Kazuhisa↗

Presolar (?) corundum in the Orgueil meteorite

The discovery in chondritic meteorites of diamond, SiC, and poorly crystallized graphite that formed around other stars demonstrated conclusively that presolar dust survived the formation of the solar system to be incorporated into meteorites. The presolar nature of these grains is shown by the highly unusual isotopic compositions of their constituent elements. To date, all recognized types of presolar grains have been carbon rich and apparently formed around carbon stars, those with C/O greater than 1. The discovery of the first oxygen-rich grain with isotopic characteristics consistent with a presolar origin is reported. Oxygen-rich grains presumably form only around stars with C/O less than 1.

Huss, G. R.↗

Carbonaceous Survivability on Impact

In order to gain knowledge about the potential contributions of comets and cosmic dust to the origin of life on Earth, we need to explore the survivability of their potential organic compounds on impact and the formation of secondary products that may have arisen from the chaotic events sustained by the carriers as they fell to Earth. We have performed a series of hypervelocity impact experiments using carbon-bearing impactors (diamond, graphite, kerogens, PAH crystals, and Murchison and Nogoya meteorites) into Al plate targets at velocities - 6 km/s. Estimated peak shock pressures probably did not exceed 120 GPa and peak shock temperatures were probably less than 4000 K for times of nano- to microsecs. Nominal crater dia. are less than one mm. The most significant results of these experiments are the preservation of the higher mass PAHs (e. g., pyrene relative to napthalene) and the formation of additional alkylated PAHs. We have also examined the residues of polystyrene projectiles impacted by a microparticle accelerator into targets at velocities up to 15 km/s. This talk will discuss the results of these experiments and their implications with respect to the survival of carbonaceous deliverables to early Earth. The prospects of survivability of organic molecules on "intact" capture of cosmic dust in space via soft: and hard cosmic dust collectors will also be discussed.

Bunch, T. E.↗

Hypervelocity impact survivability experiments for carbonaceous impactors

We performed a series of hypervelocity impact experiments using carbon-bearing impactors (diamond, graphite, fullerenes, phthalic acid crystals, and Murchison meteorite) into Al plate at velocities between 4.2 and 6.1 km/s. These tests were made to do the following: (1) determine the survivability of carbon forms and organize molecules in low hypervelocity impact; (2) characterize carbonaceous impactor residues; and (3) determine whether or not fullerenes could form from carbonaceous impactors, under our experimental conditions, or survive as impactors. An analytical protocol of field emission SEM imagery, SEM-EDX, laser Raman spectroscopy, single and 2-stage laser mass spectrometry, and laser induced fluorescence (LIF) found the following: (1) diamonds did not survive impact at 4.8 km/s, but were transformed into various forms of disordered graphite; (2) intact, well-ordered graphite impactors did survive impact at 5.9 km/sec, but were only found in the crater bottom centers; the degree of impact-induced disorder in the graphite increases outward (walls, rims, ejecta); (3) phthalic acid crystals were destroyed on impact (at 4.2 km/s, although a large proportion of phthalic acid molecules did survive impact); (4) fullerenes did not form as products of carbonaceous impactors (5.9 - 6.1 km/s, fullerene impactor molecules mostly survived impact at 5.9 km/s; and (5) two Murchison meteorite samples (launched at 4.8 and 5.9 km/s) show preservation of some higher mass polycyclic aromatic hydrocarbons (PAHs) compared with the non-impacted sample. Each impactor type shows unique impactor residue morphologies produced at a given impact velocity. An expanded methodology is presented to announce relatively new analytical techniques together with innovative modifications to other methods that can be used to characterize small impact residues in LDEF craters, in addition to other acquired extraterrestrial samples.

Bunch, T. E.↗

Silicon germanium semiconductive alloy and method of fabricating same

A silicon germanium (SiGe) semiconductive alloy is grown on a substrate of single crystalline Al.sub.2O.sub.3. A {111} crystal plane of a cubic diamond structure SiGe is grown on the substrate's {0001} C-plane such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium.

Park, Yeonjoon↗

Graded Index Silicon Geranium on Lattice Matched Silicon Geranium Semiconductor Alloy

A lattice matched silicon germanium (SiGe) semiconductive alloy is formed when a {111} crystal plane of a cubic diamond structure SiGe is grown on the {0001} C-plane of a single crystalline Al2O3 substrate such that a <110> orientation of the cubic diamond structure SiGe is aligned with a <1,0,-1,0> orientation of the {0001} C-plane. A lattice match between the substrate and the SiGe is achieved by using a SiGe composition that is 0.7223 atomic percent silicon and 0.2777 atomic percent germanium. A layer of Si(1-x), ,Ge(x) is formed on the cubic diamond structure SiGe. The value of X (i) defines an atomic percent of germanium satisfying 0.2277<X<1.0,(ii) is approximately 0.2777 where the layer of Si(1-x)Ge(x)interfaces with the cubic diamond structure SiGe, and (iii) increases linearly with the thickness of the layer of Si(1-x)Ge(x).

Park, Yeonjoon↗

Method for the growth of large low-defect single crystals

A method and the benefits resulting from the product thereof are disclosed for the growth of large, low-defect single-crystals of tetrahedrally-bonded crystal materials. The process utilizes a uniquely designed crystal shape whereby the direction of rapid growth is parallel to a preferred crystal direction. By establishing several regions of growth, a large single crystal that is largely defect-free can be grown at high growth rates. This process is particularly suitable for producing products for wide-bandgap semiconductors, such as SiC, GaN, AlN, and diamond. Large low-defect single crystals of these semiconductors enable greatly enhanced performance and reliability for applications involving high power, high voltage, and/or high temperature operating conditions.

Powell, J. Anthony↗

Crystal structure and density of helium to 232 kbar

The properties of helium and hydrogen at high pressure are topics of great interest to the understanding of planetary interiors. These materials constitute 95 percent of the entire solar system. A technique was presented for the measurement of X-ray diffraction from single-crystals of low-Z condenses gases in a diamond-anvil cell at high pressure. The first such single-crystal X-ray diffraction measurements on solid hydrogen to 26.5 GPa were presented. The application of this technique to the problem of the crystal structure, equation of state, and phase diagram of solid helium is reported. Crucial for X-ray diffraction studies of these materials is the use of a synchrotron radiation source which provides high brillance, narrow collimation of the incident and diffracted X-ray beams to reduce the background noise, and energy-dispersive diffraction techniques with polychromatic (white) radiation, which provides high detection efficiency.

Mao, H. K.↗

Status of Reconstruction of Fragmented Diamond-on-Silicon Collector From Genesis Spacecraft Solar Wind Concentrator

In addition to passive solar wind collector surfaces, the Genesis Discovery Mission science canister had on board an electrostatic concave mirror for concentrating the solar wind ions, known as the concentrator . The 30-mm-radius collector focal point (the target) was comprised of 4 quadrants: two of single crystal SiC, one of polycrystalline 13C diamond and one of diamond-like-carbon (DLC) on a silicon substrate. [DLC-on-silicon is also sometimes referenced as Diamond-on-silicon, DOS.] Three of target quadrants survived the hard landing intact, but the DLC-on-silicon quadrant fractured into numerous pieces (Fig. 1). This abstract reports the status of identifying the DLC target fragments and reconstructing their original orientation.

Rodriquez, Melissa C.↗

Structures and Mechanical Properties of Natural and Synthetic Diamonds

A revolution in diamond technology is in progress as the low-pressure process becomes an industrial reality. It will soon be possible to take advantage of the demanding properties of diamond to develop a myriad of new applications, particularly for self-lubricating, wear, and superhard coatings. The production of large diamond films or sheets at low cost, a distinct possibility in the not-too-distant future, may drastically change tribology technology, particularly solid lubricants and lubricating materials and systems. This chapter reviews the structures and properties of natural and synthetic diamond to gain a better understanding of the tribological properties of diamond and related materials to be described in the following chapters. Atomic and crystal structure, impurities, mechanical properties, and indentation hardness of diamond are described.

Miyoshi, Kazuhisa↗

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Elizabeth A Kolawa↗

Analysis and Evaluation of Processes and Equipment in Tasks 2 and 4 of the Low-cost Solar Array Project

The significant economic data for the current production multiblade wafering and inner diameter slicing processes were tabulated and compared to data on the experimental and projected multiblade slurry, STC ID diamond coated blade, multiwire slurry and crystal systems fixed abrasive multiwire slicing methods. Cost calculations were performed for current production processes and for 1982 and 1986 projected wafering techniques.

Goldman, H.↗

Magnetism of Carbonados

Carbonados are porous polycrystalline (with crystal sizes up to 100 micrometer) diamonds. Carbonado is found only in alluvial deposits in Bahia, Brazil and in the Central African Republic (CAR). Alluvial deposit host is 1.5 Ga while the carbonados are between 2.6 - 3.8 Ga. The process of fusing the carbonado microcrystals together is not fully understood, partly due to fact that the origin of these carbonado, is not known. Several modes of origins are proposed for carbonado. First, a crustal origin. Carbonados have a light carbon and helium isotopic signature. They contain an enrichment of the rare-earth elements (REE). Carbonados have tightly trapped atmospheric noble gases and contain an evidence of high He content despite the carbonado expected depletion of He at mantle temperatures. Carbonados have high porosity incompatible with high pressure mantle conditions. Second, a mantle origin is proposed based on similar REE pattern to kimberlites. The presence of nitrogen platelet (by IR spectra) indicates high temperature origin and syngenetic inclusions of rutile, ilmenite, and magnetite indicates high pressure and high temperature conditions consistent with mantle origin as well. Third, it is proposed that carbonado diamonds are a result of early impacts into crustal rocks. This is indicated by the rare and controversial occurrence of high pressure diamond polymorph, londsdaleite, frequently found in diamonds from meteorite impact sites, and by observation of planar deformation features, possibly indicating shock events. Finally, it is suggested that carbonados have an extraterrestrial origin, as indicated by a long term annealing based on observation of a zero-phonon line, attributed to paired nitrogen atoms in association with a vacancy.

Kletetschka, G.↗

Thermal Analysis, Compressibility, and Decomposition of Synthetic Bastnäsite-(La) to Lanthanum Oxyfluoride

Understanding basic material properties of rare earth element (REE) bearing minerals such as their phase stability and equations of state can assist in understanding how economically viable deposits might form. Bastnäsite is the most commonly mined REE bearing mineral. We synthesized the lanthanum-fluoride end member, bastnäsite-(La) (LaCO3F), and investigated its thermal behavior and decomposition products from 298 K to 1173 K under ambient pressure conditions through thermogravimetric analysis, differential scanning calorimetry, evolved gas analysis, and high temperature powder X-ray diffraction. We also investigated the compressibility of bastnäsite-(La) via single crystal X-ray diffraction in diamond anvil cells at an ambient temperature up to 11.3 GPa and from 4.9 GPa to 7.7 GPa up to 673 K. At ambient pressure, bastnäsite-(La) was stable up to 598 K in air, where it decomposed into CO2 and tetragonal γ-LaOF. Above 948 K, cubic α-LaOF is stable. High temperature X-ray diffraction data were used to fit the Fei thermal equation of state and the thermal expansion coefficient α(sub 298) for all three materials. Bastnäsite-(La) was fit from 298 K to 723 K with V(sub 0) = 439.82 Å(exp 3), α(sub 298) = 4.32 × 10(exp -5) K(exp -1), a(sub 0) = −1.68 × 10(exp -5) K(exp -1), a(sub 1) = 8.34 × 10(exp -8) K(exp -1), and a(sub 2) = 3.126 K(exp -1). Tetragonal γ-LaOF was fit from 723 K to 948 K with V(sub 0) = 96.51 Å(exp 3), α(sub 298) = 2.95×10(exp -4) K(exp -1), a(sub 0) = −2.41×10(exp -5) K(exp -1), a(sub 1) = 2.42×10(exp -7) K(exp -1), and a(sub 2) = 41.147 K(exp -1). Cubic α-LaOF was fit from 973 K to 1123 K with V(sub 0) = 190.71 Å(exp 3), α(sub 298) = −1.12×10(exp -5) K(exp -1), a(sub 0) = 2.36×10(exp -4) K(exp -1), a(sub 1) = −1.73 × 10(exp -7) K(exp -1), and a(sub 2) = −17.362 K(exp -1). An ambient temperature third order Birch–Murnaghan equation of state was fit with V(sub 0) = 439.82 Å(exp 3), K(sub 0) = 105 GPa, and K’ = 5.58.

Bastnäsite↗

Friction and deformation behavior of single-crystal silicon carbide

Friction and deformation studies were conducted with single-crystal silicon carbide in sliding contact with diamond. When the radius of curvature of the spherical diamond rider was large (0.3), deformation of silicon carbide was primarily elastic. Under these conditions the friction coefficient was low and did not show a dependence on the silicon carbide orientation. Further, there was no detectable cracking of the silicon carbide surfaces. When smaller radii of curvature of the spherical diamond riders (0.15 and 0.02 mm) or a conical diamond rider was used, plastic grooving occured and the silicon carbide exhibited anisotropic friction and deformation behavior. Under these conditions the friction coefficient depended on load. Anisotropic friction and deformation of the basal plane of silicon carbide was controlled by the slip system. 10101120and cleavage of1010.

Miyoshi, K.↗

Friction, deformation and fracture of single-crystal silicon carbide

Friction experiments were conducted with hemispherical and conical diamond riders sliding on the basal plane of silicon carbide. The results indicate that, when deformation is primarily elastic, the friction does not depend on crystallographic orientation and there is no detectable fracture or cracking. When, however, plastic deformation occurs, silicon carbide exhibits anisotropic friction and deformation behavior. Surface fracture crack patterns surrounding wear tracks are observed to be of three types. The crack-geometries of two types are generally independent of orientation, the third crack, however, depends on the orientation. All surface cracks extend into subsurface. Anisotropic friction, deformation and fracture on the basal plane are primarily controlled by the slip system and cleavage.

Miyoshi, K.↗

Friction and wear of tin and tin alloys from minus 100 C to 150 C

Sliding friction experiments were conducted with an iron (110) single-crystal pin sliding on single and polycrystalline tin and tin alloys. Specimens were examined at various ambient temperatures from -100 to 150 C. Applied loads varied from 1 to 50 grams, and sliding velocity was constant at 0.7 mm/min. Results indicate that the crystal transformation of tin influences the friction coefficient. Friction was higher for the diamond structure (gray tin) than it was for the body-centered tetragonal structure (white tin). Bismuth arrested the crystal transformation, which resulted in constant friction over the temperature range -100 to 150 C. Both copper and aluminum enhanced the kinetics of transformation, with aluminum producing a nearly twofold change in friction with the crystal transformation.

Buckley, D. H.↗