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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Ion concentration polarization causes a nearly pore-length-independent conductance of nanopores

There has been a great amount of interest in nanopores as the basis for sensors and templates for preparation of biomimetic channels as well as model systems to understand transport properties at the nanoscale. The presence of surface charges on the pore walls has been shown to induce ion selectivity as well as enhance ionic conductance compared to uncharged pores. Here, using three-dimensional continuum modeling, we examine the role of the length of charged nanopores as well as applied voltage for controlling ion selectivity and ionic conductance of single nanopores and small nanopore arrays. First, we present conditions where the ion current and ion selectivity of nanopores with homogeneous surface charges remain unchanged, even if the pore length decreases by a factor of 6. This length-independent conductance is explained through the effect of ion concentration polarization (ICP), which modifies local ionic concentrations, not only at the pore entrances but also in the pore in a voltage-dependent manner. We describe how voltage controls the ion selectivity of nanopores with different lengths and present the conditions when charged nanopores conduct less current than uncharged pores of the same geometrical characteristics. The manuscript provides different measures of the extent of the depletion zone induced by ICP in single pores and nanopore arrays, including systems with ionic diodes. In conclusion, the modeling shown here will help design selective nanopores for a variety of applications where single nanopores and nanopore arrays are used.

Cain, DaVante↗
DOE OSTI2025

Two Mechanisms Limiting the Emitted Electron Current from a Cathode to an Anode

It is known that the current of emitted electrons flowing through a plasma can saturate upon formation of a potential well adjacent to the cathode (the “space charge effect”). Here, we demonstrate another saturation mechanism that will often set a more restrictive limit on the global current. When “backflow saturation” occurs, the cathode sheath weakens to allow emitted electrons that already entered the plasma to backflow to the cathode. This effect could not be captured by studies modelling the cathode sheath by itself because its origin is coupled to processes in the interior plasma and anode sheath. By modeling a full plasma diode, we show that depending on conditions the global current can be limited in four ways; by backflow alone, by space charge alone, by both mechanisms in a stable cooperative form, or by both in a competing oscillatory form. Published by the American Physical Society 2025

Laboratory plasma↗
DOE OSTI2020

Temperature estimation in a spatially inhomogeneous flame by diode laser absorption spectroscopy

A two-temperature (2T) model is proposed for estimating the temperature of a spatially inhomogeneous hot zone using single-beam diode laser absorption spectrometry. The proposed algorithm is based on fitting experimental absorption spectra by a linear combination of two database-simulated single-temperature spectra with different temperatures. The model efficiency is experimentally demonstrated when determining the temperature in different flame zones of a Wolfgard – Parker slot burner. The proposed 2T algorithm is used to find the maximum and minimum temperatures in different flame sections, which are compared with local temperatures in the same flame zones measured by the method of coherent anti-Stokes Raman scattering (CARS). It is shown that the maximum temperatures determined by the proposed 2T algorithm are in good agreement with CARS data in flame zones where high-temperature regions prevail. A good agreement between the minimum temperatures obtained by these two methods is also observed for predominantly cold zones. (paper)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Stability of Cu(In x Ga 1− x )Se 2 Solar Cells Utilizing RbF Postdeposition Treatment under a Sulfur Atmosphere

Alkali halide postdeposition treatments (PDTs) have become a key tool to maximize efficiency in Cu(In x Ga 1− x )Se 2 (CIGS) photovoltaics. RbF PDTs have emerged as an alternative to the more common Na‐ and K‐based techniques. This study utilizes temperature‐dependent current–voltage ( JVT ) measurements to study a unique RbF PDT performed in a S atmosphere. The samples are measured before and after 6 months in a desiccator to study device stability. Both samples contain Na and K which diffuse from the soda–lime glass substrate. A reference sample and a RbF + S PDT sample both show the development of a rear contact barrier after aging. The contact barrier is higher for the RbF + S PDT sample, leading to decreased current in forward bias. Series resistance is also higher in the RbF + S PDT device which leads to lower fill factor. However, after aging the reference sample has a larger decrease in open‐circuit voltage ( V OC ). Ideality factor measurements suggest Shockley–Read–Hall recombination dominates both samples. V OC versus temperature and a temperature‐dependent activation energy model are used to calculate diode activation energies for each sample condition. Both techniques produce similar values that indicate recombination primarily occurs within the bulk absorber.

14 SOLAR ENERGY↗
DOE OSTI2024

Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution

Here we introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S 21 roll-off slower than –20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles.

42 ENGINEERING↗
DOE OSTI2022

Multiobjective optimization of nuclear microreactor reactivity control system operation with swarm and evolutionary algorithms

To improve the marketability of novel microreactor designs, there is a need for automated and optimal control of these reactors. This paper presents a methodology for performing multiobjective optimization of control drum operation for a microreactor under normal and off-nominal conditions. Here, two different case studies are used where the control drum configuration is optimized for the reactor to be critical with some desired power distribution that would satisfy peaking limits. A surrogate model for power distribution is developed based on a feedforward neural network. The process for determining weights for scalarization of the multiobjective optimization problem is also detailed. Six optimization algorithms: evolutionary strategies, differential evolution, grey wolf optimization, Harris hawks optimization, moth flame optimization and particle swarm optimization, are all applied to these cases and the results analyzed. Although all these algorithms will demonstrate optima-seeking behavior, for real-time control it is necessary to identify the best algorithm to efficiently provide reasonable optima without operator interference. The moth flame optimization algorithm was found to perform particularly well on both cases. Overall, it was found that the algorithms capable of supplying the best optima were also the most consistent. Finally, the found optima were verified with the original model used to train surrogates.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2026

Material-dependent photon ionizing radiation effects in Si and GaAs PIN diodes: A numerical investigation

We present a finite-element drift-diffusion-Poisson model in the Multiphysics Object-Oriented Simulation Environment (MOOSE) framework to compare the radiation response of silicon (Si) and gallium arsenide (GaAs) PIN diodes under high-energy photon irradiation. The model solves coupled carrier continuity and Poisson’s equations with Shockley-Read-Hall recombination, and is verified against standard analytical J-V behavior. Using a simplified 1D geometry with ideal Ohmic contacts, we quantify device response under forward and reverse bias with a 100 MeV photon flux. Under forward bias, Si exhibits markedly greater radiation sensitivity than GaAs, including larger increases in current density, stronger local field and carrier-product perturbations, and higher recombination. Under reverse bias, GaAs shows larger radiation-induced photocurrent and broader current-density peaks near junctions, indicating an advantage for photodetection. Integrated steady-state recombination is consistently higher in Si across voltages. Under periodic photon pulses, GaAs produces higher-amplitude photoresponse and settles more rapidly than Si. These results highlight material-dependent trade-offs for radiation-tolerant, high-speed optoelectronics and provide guidance for selecting PIN architectures in aerospace, nuclear, and high-energy physics environments.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Magnus induced diode effect for skyrmions in channels with periodic potentials

Using a particle based model, we investigate the skyrmion dynamical behavior in a channel where the upper wall contains divots of one depth and the lower wall contains divots of a different depth. Under an applied driving force, skyrmions in the channels move with a finite skyrmion Hall angle that deflects them toward the upper wall for -x direction driving and the lower wall for +x direction driving. When the upper divots have zero height, the skyrmions are deflected against the flat upper wall for -x direction driving and the skyrmion velocity depends linearly on the drive. For +x direction driving, the skyrmions are pushed against the lower divots and become trapped, giving reduced velocities and a nonlinear velocity-force response. When there are shallow divots on the upper wall and deep divots on the lower wall, skyrmions get trapped for both driving directions; however, due to the divot depth difference, skyrmions move more easily under -x direction driving, and become strongly trapped for +x direction driving. Further, the preferred -x direction motion produces what we call a Magnus diode effect since it vanishes in the limit of zero Magnus force, unlike the diode effects observed for asymmetric sawtooth potentials. We show that the transport curves can exhibit a series of jumps or dips, negative differential conductivity, and reentrant pinning due to collective trapping events. We also discuss how our results relate to recent continuum modeling on a similar skyrmion diode system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

A discussion on various experimental methods of impact ionization coefficient measurement in GaN

Impact ionization coefficients play a critical role in semiconductors. In addition to silicon, silicon carbide and gallium nitride are important semiconductors that are being seen more as mainstream semiconductor technologies. As a reflection of the maturity of these semiconductors, predictive modeling has become essential to device and circuit designers, and impact ionization coefficients play a key role here. Recently, several studies have measured impact ionization coefficients. We dedicated the first part of our study to comparing three experimental methods to estimate impact ionization coefficients in GaN, which are all based on photomultiplication but feature characteristic differences. The first method inserts an InGaN hole-injection layer, the accuracy of which is challenged by the dominance of ionization in InGaN, leading to possible overestimation of the coefficients. The second method utilizes the Franz–Keldysh effect for hole injection but not for electrons, where the mixed injection of induced carriers would require a margin of error. The third method uses complementary p–n and n–p structures that have been at the basis of this estimation in Si and SiC and leans on the assumption of a constant electric field, and any deviation would require a margin of error. In the second part of our study, we evaluated the models using recent experimental data from diodes demonstrating avalanche breakdown.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Laser-driven quasi-static B-fields for magnetized high-energy-density experiments

We present measurements of magnetic fields generated in laser-driven coil targets irradiated by laser pulses of nanosecond duration, 1.053 μm wavelength, 500 J energy, and ∼1015 W/cm2 intensity, at the LULI2000 facility. Using two perpendicular probing axes, proton deflectometry is used to characterize the coil current and static charge at different times. Results reveal various deflection features that can be unambiguously linked to a looping quasi-steady current of well-understood polarity or to a static charging of the coil surface. Measured currents are broadly consistent with predictions from a laser-driven diode-current source and lumped circuit model, supporting the quasi-steady assessment of the discharges. Peak magnetic fields of ∼50 T at the center of 500-μm-diameter coils, obtained at the moderate laser intensity, open up the use of such laser-driven coil targets at facilities worldwide to study numerous phenomena in magnetized high-energy-density plasmas, and its potential applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

42 ENGINEERING↗
DOE OSTI2025

Fundamental advantages of multijunction thermoradiative cells

Thermoradiative (TR) cells convert heat to work through emission of thermal radiation. Multijunction thermoradiative cells have received little research interest due to the apparent overlap with energy harvesting limits. Through detailed balance formalism, the present study models both single- and multi-diode TR devices, establishing their performance limits and identifying key factors that influence efficiency. For single-junction TR cells, we derive a relationship for the optimal bandgap and show that higher emitter temperatures increase efficiency. When the receiver is at absolute zero temperature, multijunction TR cells have little advantage over the single-junction cell in terms of the maximum output power density. However, for higher receiver temperatures, the multijunction configuration demonstrates significant improvements in both power and efficiency through the optimization of the chemical potential and bandgap of each diode in the complete ensemble. A 500 K emitter and 300 K receiver TR system can achieve a 21.25% increase in efficiency and a 10% improvement in the power density with multijunction architecture compared to a single junction through chemical potential optimization. These findings suggest that multijunction TR cells offer a promising approach to advancing low-grade heat recovery technologies for efficient heat-to-work conversion.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2021

Simulation and Modeling of Time-Resolved X-Ray Detector for the Saturn Accelerator

In this work, we present the technology-aided computer design (TCAD) device simulation and modeling of a silicon p-i-n diode for detecting time-dependent X-ray radiation. We show that the simulated forward and reverse breakdown current–voltage characteristics agree well with the measured data under nonradiation environment by only calibrating carrier lifetimes for the forward bias case and avalanche model critical fields for the reverse bias condition. Using the calibrated parameters and other nominal material properties, we simulated the radiation responses of the p-i-n diode and compared with experimental data when the diode was exposed to X-ray radiation at Sandia’s Saturn facility and the Idaho State University (ISU) TriMeV facility. For Saturn’s Gaussian dose-rate pulses, we show three findings from TCAD simulations. First, the simulated photocurrents are in excellent agreement with the measured data for two dose-rate pulses with peak values of 1.16×10 10 and 1.88×10 10 rad(Si)/s. Second, the simulation results of high dose-rate pulses predict increased delayed photocurrents with longer time tails in the diode electrical responses due to excess carrier generation. Third, simulated peak values of diode radiation responses versus peak dose rates at different bias conditions provide useful guidance to determine the dose-rate range that the p-i-n diode can reliably detect in experiment. For TriMeV’s non-Gaussian dose-rate pulse, our simulated diode response is in decent agreement with the measured data without further calibration. We also studied the effects of device geometry, recombination process, and dose-rate enhancement via TCAD simulations to understand the higher measured response in the time after the peak dose-rate radiation for the p-i-n diode exposed to TriMeV irradiation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

High-Brightness Ultraviolet Lasers for Leap-Ahead National Security Applications

In this project we endeavored to improve the state-of-the-art in UV lasers diodes. We made important advancements in several fronts from modeling, to epitaxial growth, to fabrication, and testing. Throughout the project it became clear that polarization doping would be able to help advance the state of laser diode design in terms of electrical performance, but the optical design would need to be investigated to ensure that a 2D guided mode would be supported. New capability in optical modeling using commercial software demonstrated that the new polarization doped structures would be viable. New capability in pulsed testing was established to reach the current and voltage required. Our fabricated devices had some parasitic electrical paths which hindered performance that we were ultimately unable to overcome in the project timeframe. We do believe that future projects will be able to leverage the advancements made under this project.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Dynamic-quenching of a single-photon avalanche photodetector using an adaptive resistive switch

One of the most common approaches for quenching single-photon avalanche diodes is to use a passive resistor in series with it. A drawback of this approach has been the limited recovery speed of the single-photon avalanche diodes. High resistance is needed to quench the avalanche, leading to slower recharging of the single-photon avalanche diodes depletion capacitor. We address this issue by replacing a fixed quenching resistor with a bias-dependent adaptive resistive switch. Reversible generation of metallic conduction enables switching between low and high resistance states under unipolar bias. As an example, using a Pt/Al 2 O 3 /Ag resistor with a commercial silicon single-photon avalanche diodes, we demonstrate avalanche pulse widths as small as ~30 ns, 10× smaller than a passively quenched approach, thus significantly improving the single-photon avalanche diodes frequency response. The experimental results are consistent with a model where the adaptive resistor dynamically changes its resistance during discharging and recharging the single-photon avalanche diodes.

42 ENGINEERING↗
DOE OSTI2025

STARFIRE – Science and Technology Accelerated Research for Fusion Innovation and Reactor Engineering progress report

The STARFIRE hub leverages foundational science and technology (S&T) research and integrated plant modeling tools to advance Inertial Fusion Energy (IFE). S&T breakthroughs achieved in each thrust are incorporated into an integrated modeling tool to assess and prioritize remaining gaps to bridge for IFE to become viable. Scientific highlights span high-gain target design, diode-pumped solid-state lasers, and innovative target manufacturing. Key highlights include the investigation of shock propagation through various foam structures among other limiting factors of compression of IFE target, exploration of novel 3D printing techniques such as light-sheet additive manufacturing for 2-photon polymerization foams, and diode-pumped solid-state laser architectures required for several IFE approaches. In addition, the STARFIRE team has established two public-private working groups to address laser diode supply chain issues and test advanced laser diode configurations. Finally, a lite version of the integrated modeling tool has been developed to facilitate outreach and engage with private companies. STARFIRE’s management structure has been designed to ensure agile resource allocation, robust performance assessment, and alignment with the broader fusion energy mission. STARFIRE’s breakthroughs are disseminated to the community via reports, presentations, and publications, while agreements with private companies are set in place to protect proprietary information.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗