Effects of Antimony Doping on CdTe Solar Cell Performance
Effects of Antimony Doping on CdTe Solar Cell Performance
14 SOLAR ENERGY↗
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Electronic structure, self-doping, and superconducting instability in the alternating single-layer trilayer stacking nickelates La 3 Ni 2 O 7
Motivated by the recently proposed alternating single-layer trilayer stacking structure for the nickelate La 3 Ni 2 O 7 , we comprehensively study this system using ab initio and random-phase approximation techniques. Here, our analysis unveils similarities between this novel La 3 Ni 2 O 7 structure and other Ruddlesden-Popper nickelate superconductors, such as a similar charge-transfer gap value and orbital-selective behavior of the eg orbitals. Pressure primarily increases the bandwidths of the Ni e g bands, suggesting an enhancement of the itinerant properties of those e g states. By changing the cell volume ratio V/V 0 from 0.9 to 1.10, we found that the bilayer structure in La 3 Ni 2 O 7 always has lower energy than the single-layer trilayer stacking La 3 Ni 2 O 7 . In addition, we observe a “self-doping” effect (compared to the average 1.5 electrons per eg orbital per site of the entire structure) from the trilayer to the single-layer sublattices and this effect will be enhanced by overall electron doping. Moreover, we find a leading d x 2 -y 2 -wave pairing state that is restricted to the single layer. Because the effective coupling between the single layers is very weak, due to the nonsuperconducting trilayer in-between, this suggests that the superconducting transition temperature T c in this structure should be much lower than in the bilayer structure.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Photocarrier dynamics at the interface between WS 2 and ozone-irradiated graphene
We investigate the photocarrier properties of heterostructures (HSs) formed by WS 2 and ozone-irradiated graphene (OI-graphene), with a focus on the impact of ozone irradiation. Photoluminescence and Raman spectroscopy reveal a pronounced doping effect induced by ozone irradiation on the graphene layer. Transient absorption measurements demonstrate a substantial suppression of charge transfer efficiency across the interface in the presence of ozone molecules. Spatially resolved pump-probe measurements further show a significant reduction in the diffusion coefficient of photocarriers in WS 2 on OI-graphene compared to that of individual WS 2 monolayers. The slower diffusion suggests enhanced spatial separation of electrons and holes in the WS 2 layer, induced by a built-in electric field at the interface. This effect arises from the combined influences of doping and dielectric property changes caused by ozone molecules. These findings highlight the critical influence of ozone irradiation on graphene and HS interfaces, offering valuable insights for the design of future graphene-based two-dimensional HSs.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Single Nanoflake Photoelectrochemistry Reveals Intrananoflake Doping Heterogeneity That Explains Ensemble-Level Photoelectrochemical Behavior
Transition metal dichalcogenide (TMD) nanoflake thin films are attractive electrode materials for photoelectrochemical (PEC) solar energy conversion and sensing applications, but their photocurrent quantum yields are generally lower than those of bulk TMD electrodes. The poor PEC performance has been primarily attributed to enhanced charge carrier recombination at exposed defect and edge sites introduced by the exfoliation process. Here, a single nanoflake PEC approach reveals how an alternative effect, doping heterogeneity, limits ensemble-level PEC performance. Photocurrent mapping and local photocurrent–potential (i–E) measurements of MoS 2 nanoflakes exfoliated from naturally occurring bulk crystals revealed the presence of n- and p-type domains within the same nanoflake. Interestingly, the n- and p-type domains in the natural MoS 2 nanoflakes were equally efficient for iodide oxidation and tri-iodide reduction (IQE values exceed 80%). At the single domain-level, the natural MoS 2 nanoflakes were nearly as efficient as nanoflakes exfoliated from synthetic n-type MoS 2 crystals. Single domain-level i–E measurements explain why natural MoS 2 nanoflakes exhibit an n-type to p-type photocurrent switching effect in ensemble-level measurements: the n- and p-type diode currents from individual domains oppose each other upon illuminating the entire nanoflake, resulting in zero photocurrent at the switching potential. Furthermore, the doping heterogeneity effect is likely due to nonideal stoichiometry, where p-type domains are S-rich according to XPS measurements. Although this doping heterogeneity effect limits photoanode or photocathode performance, these findings open the possibility to synthesize efficient TMD nanoflake photocatalysts with well-defined lateral p- and n-type domains for enhanced charge separation.
14 SOLAR ENERGY↗
Doping Bottleneck in Hematite: Multipole Clustering by Small Polarons
We report highly effective doping in transition metal oxides is critical to fundamentally overcome low carrier conductivity due to small polaron formation and reach their ideal efficiency for energy conversion applications. However, the optimal doping concentration in polaronic oxides such as hematite has been extremely low, for example, less than a percent, which hinders the benefits of doping for practical applications. In this work, we investigate the underlying mechanism of low optimal doping concentration with group IV (Ti, Zr, and Hf) and XIV (Si, Ge, Sn, and Pb) dopants from first-principles calculations. We find that novel dopant-polaron clustering occurs even at very low dopant concentrations and resembles electric multipoles. These multipoles can be very stable at room temperature and are difficult to fully ionize compared to separate dopants, and thus they are detrimental to carrier concentration improvement. This allows us to uncover mysteries of the doping bottleneck in hematite and provide guidance for optimizing doping and carrier conductivity in polaronic oxides toward highly efficient energy conversion applications.
36 MATERIALS SCIENCE↗
Effects of Counter-Ion Size on Delocalization of Carriers and Stability of Doped Semiconducting Polymers
Not provided.
Materials Science↗
The Effect of Dopant Concentration and Annealing Treatments on N-Type Iodine Doped CdTe
We report properties of highly conducting n-type cadmium telluride single crystals doped with iodine (CdTe:I). These crystals were grown with dopant concentrations in the range of 10^17 cm-3 to 10^19 cm-3 by Modified Vertical Bridgman (MVB) melt growth. Post-growth dopant activation, including Cd annealing, Te annealing, and rapid thermal annealing (RTA), was applied to improve free carrier density. The structural, optical, and electrical properties were analyzed by Glow Discharge Mass Spectroscopy (GDMS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Photoluminescence Spectroscopy (PL), optical absorption, Hall measurements, Capacitance-Voltage (CV) measurements, and time-resolved photoluminescence (TRPL). The results indicate that Cd annealing is the most effective activation method to get 100% donor activation (n is approximately 2 x 10^18 cm-3), which is close to the room temperature solubility limit of iodine. This leads to the lowest resistivity and the highest mobility. Moreover, this data suggests a potential role of Cd vacancy-related defects on electrical self-compensation.
annealing↗
Direct fabrication and characterization of vertically stacked Graphene/h-BN/Graphene tunnel junctions
We have used a lithography free technique for the direct fabrication of vertically stacked two-dimensional (2D) material-based tunnel junctions and characterized by Raman, AFM, XPS. We fabricated Graphene/h-BN/Graphene devices by direct deposition of graphene (bottom layer), h-BN (insulating barrier) and graphene (top layer) sequentially using a plasma enhanced chemical vapor deposition on Si/SiO 2 substrates. The thickness of the h-BN insulating layer was varied by tuning the plasma power and the deposition time. Samples were characterized by Raman, AFM, and XPS. The I-V data follows the barrier thickness dependent quantum tunneling behavior for equally doped graphene layers. The resonant tunneling behavior was observed at room temperature for oppositely doped graphene layers where hydrazine and ammonia were used for n-doping of one of the graphene layers. The resonance with negative differential conductance occurs when the band structures of the two electrodes are aligned. The doping effect of the resonant peak is observed for varying doping levels. The results are explained according to the Bardeen tunneling model.
2D-materials↗
Modified carbon nanotubes and methods of forming carbon nanotubes
In this invention, processes which can be used to achieve stable doped carbon nanotubes are disclosed. Preferred CNT structures and morphologies for achieving maximum doping effects are also described. Dopant formulations and methods for achieving doping of a broad distribution of tube types are also described.
Heintz, Amy M.↗
Effect of niobium doping on excitonic dynamics in MoSe 2
Abstract Transition metal dichalcogenides (TMDs) have emerged as attractive two-dimensional semiconductors for future electronic and optoelectronic applications. Their charge transport properties, such as conductivity and the type of charge carriers, can be effectively controlled by substitutional doping of the transition metal atoms. However, the effects of doping on the excitonic properties, particularly their dynamical properties, have been less studied. Using Nb-doped MoSe 2 as a case study, we experimentally investigate the effect of doping on excitonic dynamics in TMDs. Transient absorption measurements are used to directly compare the dynamical properties of excitons in Nb-doped MoSe 2 across monolayer, bilayer, and bulk flakes with their undoped counterparts. The exciton lifetimes in Nb-doped flakes are significantly shorter than those in their undoped counterparts. This effect is attributed to the trapping of excitons in defect states introduced by Nb impurities. These results reveal an important consequence of Nb doping on excitonic dynamics in TMDs.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Effect of nitrogen doping and pressure on the stability of $\mathrm{LuH_3}$
A report on the near-ambient superconductivity in a nitrogen-doped lutetium hydride has stimulated great interest in this material [Dasenbrock-Gammon et al. , Nature (London) 615, 244 (2023)]. While its superconductivity is still a subject of debate, the structure of the claimed cubic phase remains uncertain. In this work, we study the effect of nitrogen doping and pressure on the energetic and dynamic stability of cubic $\mathrm{LuH_3}$. Our findings indicate that both pressure and nitrogen doping can enhance the stability of the cubic $\mathrm{LuH_3}$ phase. Here, we propose a $\mathrm{Lu_8}$$\mathrm{H_{21}}$$\mathrm{Lu}$ structure that exhibits a stable phonon, reasonable thermodynamic stability at 1 GPa, and an x-ray diffraction pattern similar to the experimental data. However, we do not observe electron-phonon coupling in the zone-center phonon modes of these crystal structures.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Magnetic order in a quenched-high-temperature-phase of Cu-doped MnBi
Permanent magnets are of great importance due to their vast applications. MnBi has been proposed to be a potential permanent magnet that can be widely used while past efforts have been focused on optimizing the ferromagnetic low-temperature phase of MnBi. Herein, we report a series of new materials, Cu x Mn 1–x Bi, crystallizing in a quenched high-temperature-phase (QHTP) MnBi-related structure. In this study, we synthesized single crystals of Cu x Mn 1–x Bi and found that they crystallize in an unreported trigonal structure (P$\bar{3}$1c). Magnetic properties measurements imply high-temperature antiferromagnetic (AFM) ordering and low-temperature ferromagnetic or ferrimagnetic (FM/FiM) ordering. By analyzing the doping effect on crystal structure and magnetic properties, we established a magnetic phase diagram for Cu-doped MnBi and attributed the AFM and FM/FiM to two different atomic sites of Mn.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Iron Impurity Impairs the CO 2 Capture Performance of MgO: Insights from Microscopy and Machine Learning Molecular Dynamics
Magnesium oxide (MgO) is a promising sorbent for direct air capture (DAC) of carbon dioxide. Iron (Fe) is a common impurity in naturally occurring MgO and minerals used to produce MgO, yet a molecular-scale understanding of Fe-doping effects on carbonation is lacking. Here, in this study, we observed reduced carbonation performance in Fe-doped MgO experimentally. The energetics of adsorbing a (bi)carbonate ion on pristine and Fe-doped MgO(001) surfaces were further investigated using ab initio and machine learning potential molecular dynamics coupled with metadynamics simulations. Both pristine and Fe-doped surfaces exhibited a basic (OH – ) hydration layer, where the (bi)carbonate ion adsorption is thermodynamically favorable. However, the dissolution of surface Fe had smaller energy barriers and was more favorable than Mg. Leached Fe likely neutralized the near-surface basicity, yielding reduced reactivity on Fe-doped MgO. Our observations offer critical insights for material selection and emphasize the importance of evaluating the geologic origin of earth materials used for DAC.
36 MATERIALS SCIENCE↗
Superconducting phase diagram in Bi x Ni 1 – x thin films: The effects of Bi stoichiometry on superconductivity
The Bi-Ni binary system has been of interest due to possible unconventional superconductivity aroused therein, such as time-reversal symmetry breaking in Bi/Ni bilayers or the coexistence of superconductivity and ferromagnetism in Bi 3 Ni crystals. While Ni acts as a ferromagnetic element in such systems, the role of the strong spin-orbit coupling element Bi in superconductivity has remained unexplored. In this work, we systematically studied the effects of Bi stoichiometry on the superconductivity of Bi x Ni 1–x thin films (x ≈ 0.5–0.9) fabricated via a composition-spread approach. Here, the superconducting phase map of Bi x Ni 1–x thin films exhibited a superconducting composition region attributable to the intermetallic Bi 3 Ni phase with different amounts of excess Bi, revealed by synchrotron x-ray diffraction analysis. Interestingly, the mixed-phase region with Bi 3 Ni and Bi showed unusual increases in the superconducting transition temperature and residual resistance ratio as more Bi impurities were included, with the maximum T c (=4.2K) observed at x ≈ 0.79. A correlation analysis of structural, electrical, and magneto-transport characteristics across the composition variation revealed that the unusual superconducting “dome” is due to two competing roles of Bi: impurity scattering and carrier doping. We found that the carrier doping effect is dominant in the mild doping regime (0.74 ≤ x ≤ 0.79), while impurity scattering becomes more pronounced at larger Bi stoichiometry.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Synthesis of poly(3,4-ethylenedioxythuophene) derivatives using three-armed conjugated cross-linker and its thermoelectric properties
Conducting polymer based thermoelectric systems are very effective at harvesting electricity from waste heat with low-temperature gradients relative to environmental temperature. However, although various studies concerning the doping effect exist, there are insufficient reports on the effect of the change in polymer chain structure on the thermoelectric properties. Here we demonstrate different poly(3,4-ethylenedioxythiophene) (PEDOT)-derivative chain structures (such as linear, two-dimensional, co-polymer), by varying the amount of three-armed conjugated cross-linker (1,3,5-tri(2-thienyl)-benzene (TTB)). Further, at a small amount of TTB addition (until 0.5 mM), the electrochemical charge transport of the PEDOT films increased without shift of the UV–Vis absorbing property. However, from higher than 0.5 mM TTB, electrochemical charge transport decreased with blue shift of the UV–Vis absorbing curve. Moreover, the power factor of the PEDOT-derivative films without TTB to a small amount of TTB (0.5 mM) was improved from (27.03 to 49.43) µWm -1 K -2 , and at higher than 0.5 mM TTB concentration, was diminished, respectively, because a small amount of TTB enhanced the π–π interaction of the polymer chains without disrupting the conjugation, while excess TTB molecules blocked conjugation of the polymer.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Charge density wave modulation in superconducting BaPb O 3 / BaBi O 3 superlattices
The isotropic, nonmagnetic doped BaBiO 3 superconductors maintain some similarities to high-T c cuprates, while also providing a cleaner system for isolating charge density wave (CDW) physics that commonly competes with superconductivity. Artificial layered superlattices offer the possibility of engineering the interaction between superconductivity and CDW. Here we stabilize a low-temperature, fluctuating short-range CDW order by using artificially layered epitaxial (BaPbO 3 ) 3m /(BaBiO 3 ) m (m = 1-10 unit cells) superlattices that are not present in the optimally doped BaPb 0.75 Bi 0.25 O 3 alloy with the same overall chemical formula. Charge transfer from BaBiO 3 to BaPbO 3 effectively dopes the former and suppresses the long-range CDW; however, as the short-range CDW fluctuations strengthen at low temperatures charge appears to localize and superconductivity is weakened. The monolayer structural control demonstrated here provides compelling implications to access controllable, local density wave orders absent in bulk alloys and manipulate phase competition in unconventional superconductors.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Room-temperature superconductivity in boron- and nitrogen-doped lanthanum superhydride
Recent theoretical and experimental studies of hydrogen-rich materials at megabar pressures (i.e., >100 GPa) have led to the discovery of very high-temperature superconductivity in these materials. Lanthanum superhydride LaH10 has been of particular focus as the first material to exhibit a superconducting critical temperature (T c ) near room temperature. Experiments indicate that the use of ammonia borane as the hydrogen source can increase the conductivity onset temperatures of lanthanum superhydride to as high as 290 K. In this work, we examine the doping effects of B and N atoms on the superconductivity of LaH 10 in its fcc ($Fm\bar{3}m$) clathrate structure at megabar pressures. Doping at H atomic positions strengthens the H 32 cages of the structure to give higher phonon frequencies that enhance the Debye frequency and thus the calculated T c . The predicted T c can reach 288 K in LaH 9.985 N 0.015 within the average high-symmetry structure at 240 GPa. The remarkably large shift in T c to higher values produced by small degrees of chemical doping opens the prospect for the creation of still higher-temperature superconductivity in superhydrides potentially at even lower-pressure conditions.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Intrinsic even-odd thickness-driven anomalous Hall effect in epitaxial MnBi2Te4 thin films
We demonstrate precise control of magnetism in MnBi2Te4 thin films through careful synthesis by molecular beam epitaxy, achieving minimal defects and accurate layer thickness control. By optimizing Mn-Bi-Te ratios and growth temperatures, we minimize detrimental self-doping effects and accurately target integer-layer films. X-ray diffraction and reflectivity provide quantitative measures of film quality and thickness. When these macroscale probes of structure and thickness are integrated with magnetotransport measurements, a striking even-odd layer dependence of the anomalous Hall effect is revealed. Odd-layer films exhibit a large hysteresis up to the Néel temperature (∼25K), consistent with noncompensated antiferromagnetism, while even-layer films show minimal response, as expected for an antiferromagnet. The sign of the anomalous Hall effect exhibits a sign reversal for intrinsic magnetism versus magnetism associated with defects. This work identifies critical factors for inducing pure, noncompensated ferromagnetism and reveals the characteristics of the intrinsic anomalous Hall effect in MnBi2Te4, which together is a step toward realizing the zero-field quantum anomalous Hall effect in topological materials.
Mallick, Deb [ORNL] (ORCID:000900005806411X)↗