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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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Recent Advances in Structural Carbon Nanotube Composites

Carbon nanotubes (CNT) have been a subject of investigation for more than two decades. Part of the interest in CNTs was driven by CNT tensile mechanical properties at the nanoscale that suggest their potential to outperform state-of-the-art (SOA) lightweight structural materials. Early work on the development of CNT nanocomposites involved the dispersion of CNT powder into polymer matrices. Although low levels of CNT doping resulted in meaningful increases in electrical conductivity to enable applications such as electrostatic charge dissipation, the highest concentrations of CNTs in these lightly doped nanocomposites did not yield mechanical properties that could compete with SOA carbon fiber composites. The maximum concentration of CNTs in lightly doped nanocomposites was limited to about 5% due to increases in viscosity that prevent the fabrication of good quality nanocomposites. At the lower concentrations, properties of the resulting nanocomposites were analogous to those of composites made with very short, chopped carbon fibers. About ten years ago, CNTs became available in continuous fiber form, allowing the investigation of processing methods to incorporate much higher CNT content into composites. Recent developments in CNT composite fabrication have yielded improved mechanical properties and indicate that while some standard carbon fiber composite processing methods can be used, CNTs have unique microstructural features that require techniques tailored to access the hierarchical features of CNTs. This presentation will discuss the evolution of structural CNT mechanical property advancements and collaboration mechanisms for research across federal labs, academia, and industry that accelerated the maturation of structural CNTs.

Carbon Nanotubes↗
NASA NTRS1978

The effects of copper and titanium on silicon solar cells

Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.

Salama, A. M.↗
NASA NTRS1999

Heat Transfer Issues in Thin-Film Thermal Radiation Detectors

The Thermal Radiation Group at Virginia Polytechnic Institute and State University has been working closely with scientists and engineers at NASA's Langley Research Center to develop accurate analytical and numerical models suitable for designing next generation thin-film thermal radiation detectors for earth radiation budget measurement applications. The current study provides an analytical model of the notional thermal radiation detector that takes into account thermal transport phenomena, such as the contact resistance between the layers of the detector, and is suitable for use in parameter estimation. It was found that the responsivity of the detector can increase significantly due to the presence of contact resistance between the layers of the detector. Also presented is the effect of doping the thermal impedance layer of the detector with conducting particles in order to electrically link the two junctions of the detector. It was found that the responsivity and the time response of the doped detector decrease significantly in this case. The corresponding decrease of the electrical resistance of the doped thermal impedance layer is not sufficient to significantly improve the electrical performance of the detector. Finally, the "roughness effect" is shown to be unable to explain the decrease in the thermal conductivity often reported for thin-film layers.

Barry, Mamadou Y.↗
NASA NTRS1992

Improved electrical properties of n-type SiGe alloys

The effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 microV/cm-K-squared can be achieved with carrier concentrations of 2.0 - 2.5 x 10 exp 20/cu cm and mobilities of 38-40 sq cm/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented. Initial results are presented on fabrication of n-type samples from ultrafine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter midfrequency phonons.

Scoville, A. N.↗
NASA NTRS1998

1.54 micron Emission from Erbium implanted GaN for Photonic Applications

The development of efficient and compact light sources operating at 1.54 micron is of enormous importance for the advancement of new optical communication systems. Erbium (1%) doped fiber amplifiers (EDFA's) or semiconductor lasers are currently being employed as near infrared light sources. Both devices, however, have inherent limitations due to their mode of operation. EDFA's employ an elaborate optical pumping scheme, whereas diode lasers have a strongly temperature dependent lasing wavelength. Novel light emitters based on erbium doped III-V semiconductors could overcome these limitations. Er doped semiconductors combine the convenience of electrical excitation with the excellent luminescence properties of Er(3+) ions. Electrically pumped, compact, and temperature stable optoelectronic devices are envisioned from this new class of luminescent materials. In this paper we discuss the potential of Er doped GaN for optoelectronic applications based on temperature dependent photoluminescence excitation studies.

Thaik, Myo↗
NASA NTRS1987

DC electrical, thermal, and spectroscopic properties of various condensation polyimides containing surface cobalt oxide

Doping polyimides with cobalt ion causes the room temperature direct current electrical resistivity to decrease relative to the polymer alone, the reduction being most pronounced for the air-side of the cobalt modified polyimides. At a constant electrical field, resistivity for the volume, air-side and glass-side modes decreases yet further with an increase in temperature as expected for semiconductors and insulators. X-ray photoelectron spectroscopy indicates the air-side of the cobalt modified polyimides is predominantly Co3O4. The bulk resistivity of the air-side and activation energy of conduction for this surface are comparable to high purity sintered Co3O4. Charging characteristics at room temperature indicate a substantial polymer matrix contribution to both the glass-side and volume mode measurements but a negligible contribution to the air-side electrical properties. Volume electrical resistivity for similar additive levels is reduced by increasing the molecular flexibility of the host polymer.

Rancourt, J. D.↗
NASA NTRS1990

Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substituted Bi-system

Characteristics of the electron-doped-type Nd(2-x)Ce(x)CuO4 systems and substituted Bi2(Sr,Ln)3Cu2Oy system were systematically studied using the high quality thin-film samples. The Nd(2-x)Ce(x)CuO4 thin films with various Ce concentrations, x, were prepared by RF magnetron sputtering on SrTiO3 heated at around 500 C. After subsequent annealing at 1100 C in air, the films showed the c-axis orientation normal to the substrates. By means of the reducing treatment (annealing in a vacuum), superconductivity was induced for the films with 0.14 is less than or equal to x is less than or equal to 0.18. The superconductivity and transport properties of the films were strongly affected by the reducing treatment. The x = 0.15 film exhibited a sharp superconducting transition with zero resistivity at 22 K, in consistent with the diamagnetic properties. The resistivity of the films was fairly low with metallic characteristics, and the sight of the Hall coefficient was negative in the normal state. On the other hand, the normal-state optical measurements showed that the undoped Nd2CuO4 is a semiconductor with a charge transfer gap of 1.3 eV, and that, when Ce ions were doped, a plasma reflection due to the free-carriers came to be seen with the plasma frequency of 1.07 eV for 0.14 is less than or equal to x is less than or equal to 0.18. Moreover, x ray photoemission study revealed that the Cu valence of the film decreased for 2(+) for x = 0 to 1(+) for x = 0.15. These physical properties are in contrast with those of hole-doped-type cuprate superconductors. Bi2(Sr,Ln)3Cu2Oy thin films were also prepared on MgO substrates heated at 600 to 700 C by similar methods. It was found that the growth conditions for Bi-systems with two CuO2 planes were different for each composition and species of lanthanoid in the films. Moreover, preparation of Bi-system with three CuO2 planes was very difficult when lanthanoid atoms were doped in the system. Their electric transport properties and x ray photoemission spectroscopy were investigated. Carrier concentration and Cu valence were discussed with regard to the superconductivity.

Adachi, H.↗
NASA NTRS1990

A review of properties and potential aerospace applications of electrically conducting polymers

An overview of current research in conducting polymers is presented. Emphasis is placed on development of materials useful for aeronautic and space applications. Research on organic conducting polymers began in the early 1970s with the discovery of polyacetylene. Since then, many polymers which share structural characteristics with polyacetylene have been prepared which conduct electricity, especially when they are doped with suitable agents. Problems with environmental instability, difficult processing, poor mechanical properties and high cost have slowed the development of conducting polymers. However, practical use of these materials is imminent, based on recent refinements in understanding how polymers conduct, more systematic approaches to the development of new materials, and significant improvements in both the processing and properties.

Meador, Mary Ann B.↗
NASA NTRS1994

Quantum state transfer in double-quantum-well devices

A Monte Carlo simulation of double-quantum-well (DQW) devices is presented in view of analyzing the quantum state transfer (QST) effect. Different structures, based on the AlGaAs/GaAs system, were simulated at 77 and 300 K and optimized in terms of electron transfer and device speed. The analysis revealed the dominant role of the impurity scattering for the QST. Different approaches were used for the optimization of QST devices and basic physical limitations were found in the electron transfer between the QWs. The maximum transfer of electrons from a high to a low mobility well was at best 20%. Negative differential resistance is hampered by the almost linear rather than threshold dependent relation of electron transfer on electric field. By optimizing the doping profile the operation frequency limit could be extended to 260 GHz.

Jakumeit, Jurgen↗
NASA NTRS2008

Growth of CdZnTe Crystals the Bridgman Technique with Controlled Overpressures of Cd

Cd(1-x)Zn(x)Te crystals with x = 0.15 and 0.20, were grown in this study by closed-ampoule directional solidification (Bridgman) technique with a controlled Cd overpressure. The growth ampoule was made of quartz with inner diameter from 20 to 40 mm and a tapered length of 2.5 cm at the growth tip. Both unseeded and seeded growths were performed with total material charges up to 400 g. After the loading of starting CdZnTe material, a typical amount of 2 g of Cd was also loaded inside a Cd reservoir basket, which was attached beneath the seal-off cup. The ampoule was sealed off under a vacuum below lxl0(exp -5) Torr. The sealed ampoule was placed inside a 4-zone Bridgman furnace - a Cd reservoir zone with a heat-pipe furnace liner on the top, followed by a hot zone, a booster heating zone and a cold zone at the bottom. The Cd zone was typically 300 to 400 C below the hot zone setting. High resistivity material has been obtained without any intentional dopants but has been reproducibly obtained with In doping. The crystalline and the electrical properties of the crystals will be reported.

Su, Ching-Hu↗
NASA NTRS2006

FETs Based on Doped Polyaniline/Polyethylene Oxide Fibers

A family of experimental highly miniaturized field-effect transistors (FETs) is based on exploitation of the electrical properties of nanofibers of polyaniline/ polyethylene oxide (PANi/PEO) doped with camphorsulfonic acid. These polymer-based FETs have the potential for becoming building blocks of relatively inexpensive, low-voltage, highspeed logic circuits that could supplant complementary metal oxide/semiconductor (CMOS) logic circuits. The development of these polymerbased FETs offers advantages over the competing development of FETs based on carbon nanotubes. Whereas it is difficult to control the molecular structures and, hence, the electrical properties of carbon nanotubes, it is easy to tailor the electrical properties of these polymerbased FETs, throughout the range from insulating through semiconducting to metallic, through choices of doping levels and chemical manipulation of polymer side chains. A further advantage of doped PANi/PEO nanofibers is that they can be made to draw very small currents and operate at low voltage levels, and thus are promising for applications in which there are requirements to use many FETs to obtain large computational capabilities while minimizing power demands. Fabrication of an experimental FET in this family begins with the preparation of a substrate as follows: A layer of silicon dioxide between 50 and 200 nm thick is deposited on a highly doped (resistivity 0.01 W.cm) silicon substrate, then gold electrodes/contact stripes are deposited on the oxide. Next, one or more fibers of camphorsulphonic acid-doped PANi/PEO having diameters of the order of 100 nm are electrospun onto the substrate so as to span the gap between the gold electrodes (see Figure 1). Figure 2 depicts measured current-versus-voltage characteristics of the device of Figure 1, showing that saturation channel currents occur at source-todrain potentials that are surprisingly low, relative to those of CMOS FETs. The hole mobility in the depletion regime in this transistor was found to be 1.4 10(exp -4) sq cm/(V.s), while the one-dimensional charge density at zero gate bias was estimated to be approximately one hole per 50 two-ring repeat units of polyaniline, consistent with the rather high channel conductivity (approx. 10(exp -3) S/cm). Reducing or eliminating the PEO content of the fibers is expected to enhance the properties of future versions of this transistor.

Theofylaktos, Noulie↗
NASA NTRS1995

Changes in the superconducting properties of high-T(sub c) ceramics produced by applied electric fields

Effect of an electrostatic field in the electrode-insulator-superconductor system on the current-voltage characteristics of high-T(sub c) ceramics with various composition and different preparation technology has been studied at 77 K. Ceramics of Y-Ba-Cu-O (123) and Bi-Pb-Sr-Ca-Cu-O (2223) systems and also ones doped by Ag have been used. Electric field strength has been up to 140 MV/m. It has been shown that there are reversible changes in the critical current I(sub c) and in the conductivity in electric field at the currents somewhat more than I(sub c) at T is less than T(sub c), while at T is greater than T(sub c) the noticeable electric field effect has not been found. These effects are qualitatively similar in both ceramic systems. High negative and positive gate voltages result in an increase of the conductivity. The electric field effect is modified by magnetic field H. The field effect decreases with increasing magnetic field and disappears at H is greater than 30 Oe. In Y-Ba-Cu-O/Ag (10 wt. percent) ceramics the field effect is practically absent. It may be supposed that in the ceramics the field-induced effect is consistent with weak links at grain boundaries.

Smirnov, B. I.↗
NASA NTRS2000

Study of Doped ZnO Films Synthesized by Combining Vapor Gases and Pulsed Laser Deposition

The properties and structure of the ZnO material are similar to those of the GaN. Since an excitonic binding energy of ZnO is about 60 meV, it has strong potential for excitonic lasing at the room temperature. This makes synthesizing ZnO films for applications attractive. However, there are several hurdles in fabricating electro-optical devices from ZnO. One of those is in growing doped p-type ZnO films. Although techniques have been developed for the doping of both p-type and n-type ZnO, this remains an area that can be improved. In this presentation, we will report the experimental results of using both thermal vapor and pulsed laser deposition to grow doped ZnO films. The films are deposited on (0001) sapphire, (001) Si and quartz substrates by ablating a ZnO target. The group III and V elements are introduced into the growth chamber using inner gases. Films are characterized by x-ray diffraction, scanning probe microscopy, energy dispersive spectroscopy, Auger electron spectroscopy, and electrical measurements. The full width at half maximum of theta rocking curves for epitaxial films is less than 0.5 deg. In textured films, it rises to several degrees. Film surface morphology reveals an island growth pattern, but the size and density of these islands vary with the composition of the reactive gases. The electrical resistivity also changes with the doped elements. The relationship between the doping elements, gas composition, and film properties will be discussed.

Zhu, Shen↗