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DOE OSTI2025

Compositionally-driven surface nanostructuring on refractory compositionally complex alloys under low energy helium bombardment

Additive manufacturing enables user-defined control of the compositional complexity, opening new design spaces for complex concentrated alloys (CCAs). Refractory CCAs may offer enhanced performance in the divertor region of a fusion reactor environment where plasma-facing materials will be subject to high temperatures, low energy He and D particles, and 14 MeV neutrons. In this work, specimens with the nominal composition of NbTaMoTi, NbTaMo, NbTaTi, and NbTa were fabricated via directed energy deposition (DED) then bombarded with 40 eV He ions to a fluence of 2x10 26 m −2 at ∼ 1000 K. Post irradiation, the surface morphology and composition were examined with electron microscopy and x-ray photoelectron spectroscopy to offer information on the spatial distribution of surface nano-structuring. Sub-surface He bubbles driving the nano-structuring were examined with electron microscopy techniques. Analysis indicates the local composition directly influences the He bubble and tendril size, while the region with the highest complexity showed the shortest nano-structuring. Molecular Dynamics simulations complement the experimental results, showing comparable helium bubble growth and migration as a function of compositional complexity. This work demonstrates the compositional dependence of surface nanostructure formation of compositionally complex alloys, important for future design of complex plasma facing materials in fusion reactors.

Complex concentrated alloys↗

DOE OSTI2021

Chemical Vapor Deposition of Cubic Boron Nitride

This project explored chemical vapor deposition as a technique to synthesis cubic boron nitride (c-BN) for electronics and coating applications. Current c-BN synthesis techniques are greatly limiting due to requiring high pressure or non-equilibrium energy sources, such as ion bombardment.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Measuring sub-surface spatially varying thermal conductivity of silicon implanted with krypton

The thermal properties of semiconductors following exposure to ion irradiation are of great interest for the cooling of electronic devices; however, gradients in composition and structure due to irradiation often make the measurement difficult. Furthermore, the nature of spatial variations in thermal resistances due to spatially varying ion irradiation damage is not well understood. In this work, we develop an advancement in the analysis of time-domain thermoreflectance to account for spatially varying thermal conductivity in a material resulting from a spatial distribution of defects. We then use this method to measure the near-surface (≲1 μm) thermal conductivity of silicon wafers irradiated with Kr + ions, which has an approximate Gaussian distribution centered 260 nm into the sample. Our numerical analysis presented here allows for the spatial gradient of thermal conductivity to be extracted via what is fundamentally a volumetric measurement technique. We validate our findings via transmission electron microscopy, which is able to confirm the spatial variation of the sub-surface silicon structure, and provide additional insight into the local structure resulting from the effects of ion bombardment. Thermal measurements found the ion stopping region to have a nearly 50x reduction in thermal conductivity as compared to pristine silicon, while TEM showed the region was not fully amorphized. Our results suggest this drastic reduction in silicon thermal conductivity is primarily driven by structural defects in crystalline regions along with boundary scattering between amorphous and crystalline regions, with a negligible contribution being due to implanted krypton ions themselves.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices

Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, in this study, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal–metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m 2 ·K. Additionally, Raman maps of GaN near the GaN–diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.

Raman↗

DOE OSTI2022

System, apparatus, and method for determining elemental composition using 4D STEM

The present disclosure relates to transmission electron microscopy for evaluation of biological matter. According to an embodiment, the present disclosure further relates to an apparatus for determining the structure and/or elemental composition of a sample using 4D STEM, comprising a direct bombardment detector operating with global shutter readout, processing circuitry configured to acquire images of bright-field disks using either a contiguous array or non-contiguous array of detector pixel elements, correct distortions in the images, align each image of the images based on a centroid of the bright-field disk, calculate a radial profile of the images, normalize the radial profiles by a scaling factor, calculate the rotationally-averaged edge profile of the bright-field disk, and determine elemental composition within the specimen based on the characteristics of the edge profile of the bright-field disk corresponding to each specimen location.

Bammes, Benjamin↗

DOE OSTI2025

Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source

GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes are typically activated with cesium and oxygen, which are highly reactive and require an ultra-high vacuum (⁠~ 10 -11 Torr or lower) to operate reliably, resulting in substantial operational difficulties. A short exposure to a mediocre vacuum results in an instantaneous loss of cathode quantum efficiency (QE) due to the chemical reaction of the active layer with residual gas molecules or back-bombardment ions during operation. Covering the GaAs cathode with a 2D material, such as monolayer graphene, could provide protection against such damage due to the inhibition of chemical reactions with residual gas molecules. In this paper, we have incorporated a method known as intercalation to pass the active material underneath the graphene and activate the superlattice GaAs/GaAsP (SL-GaAs) photocathode. X-ray photoelectron spectroscopy, low-energy electron microscopy, and Mott scattering measurements were performed to evaluate the formation of the photocathode under graphene, as well as its spectral response and electron spin polarization. Our results demonstrate that the successful activation of the SL-GaAs photocathode with a graphene protection layer is achieved with a moderate QE. Furthermore, we found that the electron spin polarization of the cathode with a surface protection layer is higher than the conventional cathode without a protection layer.

2D materials↗

DOE OSTI2023

Quantifying the effect of late bombardment on terrestrial zircons

The first 500 million years of Earth history is thought to be a period of intense planetary bombardment, but the timing and flux of this meteorite bombardment is poorly understood. In particular, on the basis of an inferred lunar impact history, some workers have hypothesized a ~3.9 Ga terminal cataclysm (TC) in which there was marked increase in the impact flux affecting the Moon, the Earth and possibly other terrestrial planets. Minerals that survived this enigmatic period offer a way to test early planetary bombardment models as they may contain telltale micro- to nanoscale shock features. Here, we present results from a numerical modeling calculation that assesses the probability that a zircon residing in the crust would escape shock melting or shock deformation during a TC bombardment event. Even with conservative pressure estimates for zircon shock deformation and intermediate bombardment intensities, we find that only ~6% of ≥4.0 Ga crust would be expected to survive a 3.9 Ga cataclysm without experiencing either complete melting or zircon shock metamorphism. In this study, we couple this modeling with a search for shock effects in the oldest zircons from the Acasta Gneiss Complex, which would have been present in the Earth's crust during a putative 3.9 Ga TC. Spatially correlated electron and NanoSIMS ion microscopy of 4.02 Ga igneous zircons from Acasta reveals no evidence of ancient shock. These data, together with similar results from other Hadean zircon suites, confirm that a post-Hadean TC is unlikely to have occurred. We suggest that the dearth of pre-3.9 Ga terrestrial crust and zircons is instead best explained by endogenic processes related to the mechanisms of early crust formation. Our modeling allows us to evaluate bombardment scenarios from the terrestrial zircon record by applying probabilistic interpretations to zircon shock deformation data. This approach will be valuable for other planetary bodies, allowing broader conclusions to be drawn from geographically limited datasets.

58 GEOSCIENCES↗

DOE OSTI2020

In Situ TEM Study of Radiation Resistance of Metallic Glass–Metal Core–Shell Nanocubes

Radiation damage can cause significantly more surface damage in metallic nanostructures than bulk materials. Structural changes from displacement damage compromise the performance of nanostructures in radiation environments such as nuclear reactors and outer space, or used in radiation therapy for biomedical treatments. As such, it is important to develop strategies to prevent this from occurring if nanostructures are to be incorporated into these applications. In this work, in situ transmission electron microscope ion irradiation was used to investigate whether a metallic glass (MG) coating mitigates sputtering and morphological changes in metallic nanostructures. Dislocation-free Au nanocubes and Au nanocubes coated with a Ni–B MG were bombarded with 2.8 MeV Au 4+ ions. The formation of internal defects in bare Au nanocubes was observed at a fluence of 7.5 × 10 11 ions/cm 2 (0.008 dpa), and morphological changes such as surface roughening, rounding of corners, and formation of nanofilaments began at 4 × 10 12 ions/cm 2 (0.04 dpa). In contrast, the Ni–B MG-coated Au nanocubes (Au@NiB) showed minimal morphological changes at a fluence of 1.9 × 10 13 ions/cm 2 (0.2 dpa). Finally, the MG coating maintains its amorphous nature under all irradiation conditions investigated.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Development of an in situ ion irradiation scanning electron microscope

An in situ ion irradiation scanning electron microscope (I 3 SEM) has been developed, installed, and integrated into the Ion Beam Laboratory at Sandia National Laboratories. The I 3 SEM facility combines a field emission, variable pressure, scanning electron microscope, a 6 MV tandem accelerator, high flux low energy ion source, an 808 nm-wavelength laser, and multiple stages to control the thermal and mechanical state of the sample observed. The facility advances real-time understanding of materials evolution under combined environments at the mesoscale. As highlighted in multiple examples, this unique combination of tools is optimized for studying mesoscale material response in overlapping extreme environments, allowing for simultaneous ion irradiation, implantation, laser bombardment, conductive heating, cooling, and mechanical deformation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2025

Damage buildup in multilayer hexagonal boron nitride films under Ar ion bombardment

Ion irradiation can be used to modify properties of two-dimensional hexagonal boron nitride (2D-hBN). However, the behavior of multilayer 2D-hBN under ion bombardment remains essentially unexplored. Here, in this study, we systematically study the damage buildup in 40-nm-thick multilayer 2D-hBN films irradiated at room temperature with 500 keV Ar ions with doses up to 0.64 displacements per atom. Transmission electron microscopy, soft X-ray absorption spectroscopy, and Raman spectroscopy are employed to study effects of ion irradiation. Results reveal a monotonic buildup of damage that can be described by the phenomenological zero cascade overlap model. Compared to the behavior of other group-III nitride semiconductors, radiation damage in hBN is influenced by polymorphism, involving transitions between bonding configurations of hexagonal, cubic, and amorphous phases.

Seo, M. [Lawrence Livermore National Laboratory (L↗

DOE OSTI2024

Toward a long-lifetime polarized photoelectron gun for the Ce+BAF positron source

The addition of spin-polarized, continuous-wave (c.w.) positron beams to the 12 GeV Continuous Electron Beam Accelerator Facility (CEBAF) would provide a significant capability to the experimental nuclear physics program at Jefferson Lab. Based on bremsstrahlung and pair-production in a high-Z target, the positron source requires a 120 MeV spin-polarized c.w. electron beam of several milliamperes. While the beam dynamics of the high-current electron beam are tenable, sustaining this current for weeks of user operations requires an unprecedented charge lifetime from a high-polarization GaAs-based photocathode. A promising approach to exceed the kilocoulomb charge lifetime barrier is reducing the ion back-bombardment fluence at the photocathode. By increasing the laser size and managing the emittance growth with an adequate cathode/anode design, significantly enhanced charge lifetime may be achieved. Based upon a new simulation model that qualitatively explains the lifetime data previously measured at different spot sizes, we describe the practical implications on the parameter space available for a kilocoulomb-lifetime polarized photogun design.

Bruker, M.↗

DOE OSTI2024

Toward a long-lifetime polarized photoelectron gun for the Ce+BAF positron source

Bruker, M.↗

DOE OSTI2025

LDRD for a high-current polarized-beam photogun

The electron accelerator driving the Ce+BAF conversion target requires a spin-polarized photogun capable of delivering a CW beam current of at least 1 mA. As the high beam current limits the useful operating time of the gun between photocathode reactivations due to ion back-bombardment, it is critical to increase the charge lifetime. A Jefferson Lab LDRD project aims to calibrate the simulation models needed to predict photocathode lifetime as a function of electrostatic optics and drive laser parameters in order to design a gun providing at least 1000 C charge lifetime. A prototype gun demonstrating the validity of the scaling predictions will be built and tested at the Gun Test Stand. I will describe the background and progress of this project and give an outlook on the expected performance.

Bruker, Max [Thomas Jefferson National Accelerator↗

DOE OSTI2022

Comprehensive characterization of irradiation induced defects in ceria: Impact of point defects on vibrational and optical properties

Validation of multiscale microstructure evolution models can be improved when standard microstructure characterization tools are coupled with methods sensitive to individual point defects. We demonstrate how electronic and vibrational properties of defects revealed by optical absorption and Raman spectroscopies can be used to compliment transmission electron microscopy (TEM) and x-ray diffraction (XRD) in the characterization of microstructure evolution in ceria under non-equilibrium conditions. Experimental manifestation of non-equilibrium conditions was realized by exposing cerium dioxide (CeO2) to energetic protons at elevated temperature. Two sintered polycrystalline CeO2 samples were bombarded with protons accelerated to a few MeVs. These irradiation conditions produced a microstructure with resolvable extended defects and a significant concentration of point defects. A rate theory (RT) model was parametrized using the results of TEM, XRD, and thermal conductivity measurements to infer point defect concentrations. An abundance of cerium sublattice defects suggested by the RT model is supported by Raman spectroscopy measurements, which show peak shift and broadening of the intrinsic T2g peak and emergence of new defect peaks. Additionally, spectroscopic ellipsometry measurements performed in lieu of optical absorption reveals the presence of Ce3+ ions associated with oxygen vacancies. This work lays the foundation for a coupled approach that considers a multimodal characterization of microstructures to guide and validate complex defect evolution models.

Chauhan, Vinay S.↗

DOE OSTI2021

Crystallographic analysis of nano-tendril bundle vs fuzz growth on tungsten exposed to helicon wave-coupled helium plasma

The propensity for nano-tendril bundle (NTB) vs widespread nano-tendril growth (i.e., fuzz) on polycrystalline W under varying ion energy modulation conditions, from DC to peak-to-peak energy modulation of 42 eV at 13.56 MHz, is correlated with the crystal orientation of the underlying grains. Grains that are vicinal to crystal orientations with high surface diffusivity (e.g., {101} for a body centered cubic crystal structure) exhibit NTB growth at lower ion energy modulation amplitude than grains that are vicinal to low surface diffusivity orientations, such as {100}. Adatom mobility considerations are presented to describe the experimental observations. These results support that surface diffusion or W adatom mobility enhanced by ion bombardment plays a key role in the surface morphology evolution of W under He irradiation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Laser-Assisted Synthesis of Monolayer 2D MoSe 2 Crystals with Tunable Vacancy Concentrations: Implications for Gas and Biosensing

We report tuning the structural and electronic properties of atomically thin two-dimensional (2D) materials via defect and vacancy engineering is the key to enabling their potential use in various applications, including electronics, energy, and sensing devices. Vacancies are, for instance, becoming highly promising for the enhanced interaction of gases and biomolecules with 2D materials in energy and sensing applications. However, the deterministic generation of desirable vacancies with tunable concentrations remains a challenge in 2D materials due to the limitations in the current growth methods, such as the complex reaction chemistries and gas flow dynamics. Therefore, engineering defects and vacancies in 2D materials have been mainly limited to destructive top-down processes such as heating, ion bombardments, and laser postprocessing. Here, we introduce a single-step bottom-up synthesis approach for the growth of monolayer MoSe 2 crystals with tunable vacancy concentrations. This method utilizes the spatiotemporal properties and adjustable power densities of the lasers to control the vaporization dynamics of the stoichiometric MoSe 2 powders. Such a mechanism in the vaporization allows us to grow tunable stoichiometry monolayer MoSe 2–x crystals on the substrates. The localized and time-controlled (250 ms to 2 s) vaporization of the MoSe 2 powder by a CO 2 laser enables the formation of monolayer crystals with controlled vacancy concentrations ranging from ~1 to 20%. The effects of laser power, laser irradiation time, and background pressure on the tuning range and subsequent properties of the crystals are investigated and quantified using Raman and photoluminescence spectroscopy, scanning transmission electron microscopy (STEM), and time-correlated single-photon counting (TCSPC). This bottom-up synthesis is a promising approach that allows the deterministic vacancy tuning for future electronics and, in particular, gas and biosensing applications without the need for further postprocessing and potential structural disruption of the crystals.

2D materials↗

DOE OSTI2023

Characterizing the composition, structure, and mechanical properties of magnetron sputtering physical vapor deposition TiN and TiSiN coatings

Ti(Si)N coatings were deposited on Si wafers via magnetron sputtering physical vapor deposition technique. Scanning electron microscopy and atomic force microscopy were used to study the morphologies, grain size, and thicknesses of the different films. X-ray diffraction confirmed the formation of the titanium nitride cubic phase. X-ray photoelectron spectroscopy (XPS) was used to study the silicon and oxygen levels in the films, and high resolution XPS was used to determine the surface oxide to nitride ratios as well as the silicon–nitrogen environment. The hardness of these films was then determined with nanoindentation. It was shown that grain size and film density could be controlled by the Si level and the ion bombardment to eliminate the oxygen level in the nitride coatings, which led to the harder films. It was suggested that due to the miscibility of Si, a ternary TiSiN solid solution was formed. Stronger (200) orientation of the TiN B1-NaCl crystals was associated with increased hardness of the coatings. In conclusion, this crystalline structure was preserved after incorporating Si.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Nanoscale lattice strains in self-ion implanted tungsten

Developing a comprehensive understanding of the modification of material properties by neutron irradiation is important for the design of future fission and fusion power reactors. Self-ion implantation is commonly used to mimic neutron irradiation damage, however an interesting question concerns the effect of ion energy on the resulting damage structures. The reduction in the thickness of the implanted layer as the implantation energy is reduced results in the significant quandary: Does one attempt to match the primary knock-on atom energy produced during neutron irradiation or implant at a much higher energy, such that a thicker damage layer is produced? In this work, we address this question by measuring the full strain tensor for two ion implantation energies, 2 MeV and 20 MeV in self-ion implanted tungsten, a critical material for the first wall and divertor of fusion reactors. A comparison of 2 MeV and 20 MeV implanted samples is shown to result in similar lattice swelling. Multi-reflection Bragg coherent diffractive imaging (MBCDI) shows that implantation induced strain is in fact heterogeneous at the nanoscale, suggesting that there is a non-uniform distribution of defects, an observation that is not fully captured by micro-beam Laue diffraction. At the surface, MBCDI and high-resolution electron back-scattered diffraction (HR-EBSD) strain measurements agree quite well in terms of this clustering/non-uniformity of the strain distribution. However, MBCDI reveals that the heterogeneity at greater depths in the sample is much larger than at the surface. This combination of techniques provides a powerful method for detailed investigation of the microstructural damage caused by ion bombardment, and more generally of strain related phenomena in micro-volumes that are inaccessible via any other technique.

36 MATERIALS SCIENCE↗