Simulation study of rate limiting factors of Li-ion batteries using experimental functions of electronic and ionic resistances
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Kondo, Hiroki (ORCID:0000000227089039)↗
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Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis
Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. Here, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ~15 nm thick ultraporous (pore size ~5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al 2 O 3 system, that the ultraporous films result in ultrahigh on/off ratio (>10 9 ) at ultralow switching voltages (~±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 10 4 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Structure and overstability of resistive modes with runaway electrons
In this paper, we investigate the effects of runaway electron current on the dispersion relation of resistive magnetohydrodynamic modes in tokamaks. We present a new theoretical model to derive the dispersion relation, which is based on the asymptotic analysis of the resistive layer structure of the modes. It is found that in addition to the conventional resistive layer, a new runaway current layer can emerge whose properties depend on the ratio of the Alfvén velocity to the runaway electron convection speed. Due to the contribution from this layer, both the tearing mode and kink mode will have a real frequency in addition to a growth rate. The derived dispersion relation has been compared with numerical results using both a simplified eigenvalue calculation and a M3D-C 1 linear simulation, and good agreement is found in both cases.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Extended linear-in- T resistivity due to electron-phason scattering in moiré superlattices
Due to its incommensurate nature, moiré superlattices host not only acoustic phonons but also another type of soft collective modes called phasons. Here, we investigate the impact of electron-phason scattering on the transport properties of moiré systems. We show that the resistivity can scale linearly with temperature down to temperatures much lower than the Bloch-Grüneisen scale defined by electron kinematics on the Fermi surface. This result stems from the friction between layers, which transfers phason spectral weight to a broad diffusive low-energy peak in the mechanical response of the system. As a result, phason scattering becomes a very efficient channel for entropy production at low temperatures. We also consider the contributions of phasons to thermodynamic properties at low temperatures and find a “metallic-like” linear-in-T behavior for the specific heat, despite the fact that this behavior is due to mechanical and not electronic degrees of freedom. Finally, we discuss the implications of this finding to reports of linear-in-T resistivity in the phase diagram of twisted bilayer graphene.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Thermodynamic origin of nonvolatility in resistive memory
Electronic switches based on the migration of high-density point defects, or memristors, are poised to revolutionize post-digital electronics. Despite significant research, key mechanisms for filament formation and oxygen transport remain unresolved, hindering our ability to predict and design device properties. For example, experiments have achieved 10 orders of magnitude longer retention times than predicted by current models. Here, using electrical measurements, scanning probe microscopy, and first-principles calculations on tantalum oxide memristors, we reveal that the formation and stability of conductive filaments crucially depend on the thermodynamic stability of the amorphous oxygen-rich and oxygen-poor compounds, which undergo composition phase separation. Including the previously neglected effects of this amorphous phase separation reconciles unexplained discrepancies in retention and enables predictive design of key performance indicators such as retention stability. Furthermore, this result emphasizes non-ideal thermodynamic interactions as key design criteria in post-digital devices with defect densities substantially exceeding those of today’s covalent semiconductors.
36 MATERIALS SCIENCE↗
A theoretical investigation of the effect of Ga alloying on thermodynamic stability, electronic-structure, and oxidation resistance of Ti 2 AlC MAX phase
We present a systematic investigation of thermodynamic stability, phase-reaction, and chemical activity of Al containing disordered Ti 2 (Al-Ga)C MAX phases using machine-learning driven high-throughput framework to understand the oxidation resistance behavior with increasing temperature and exposure to static oxygen. The A-site (at Al) disordering of Ti 2 AlC with Ga shows significant change in the chemical activity of Al with increasing temperature and exposure to static oxygen, which is expected to enable surface segregation of Al, thereby, the formation of Al 2 O 3 and improved oxidation resistance. We performed in-depth convex hull analysis of ternary Ti-Al-C, Ti-Ga-C, and Ti-Al-Ga-C based MAX phase, and provide detailed contribution arising from electronic, chemical and vibrational entropies. The thermodynamic analysis shows change in the Gibbs formation enthalpy (ΔG form ) at higher temperatures, which implies an interplay of temperature-dependent enthalpy and entropic contributions in oxidation resistance Ga doped Ti 2 AlC MAX phases. A detailed electronic structure and chemical bonding analysis using crystal orbital Hamilton population method reveal the origin of change in phases stability and in oxidation resistance in disorder Ti2(Al 1-x Ga x )C MAX phases. Our electronic structure analysis correlate well with the change in oxidation resistance of Ga doped MAX phases. We believe our study provides a useful guideline to understand to role of alloying on electronic, thermodynamic, and oxidation related mechanisms of bulk MAX phases, which can work as a precursor to understand oxidation behavior of twodimensional MAX phases, i.e., MXenes (transition metal carbides, carbonitrides and nitrides).
36 MATERIALS SCIENCE↗
Photonic ring resonator notch filters for astronomical OH line suppression
Photonic ring resonator arrays used as notch filters are a promising novel solution to improve the signal-to-noise ratio of ground-based astronomical observations by suppressing OH emission lines in the near-infrared (NIR) wavelength range (0.9-2.5 μm). We aim to fabricate a series of ring resonators connected by a waveguide, each with its resonance wavelength and full-width-half-maximum (FWHM) matched with one of the OH emission lines. The fundamental structure of ring resonator-based notch filters is a ring resonator evanescently coupled to a waveguide. Due to the optical loss of the ring resonator, the transmission of light through the waveguide will be suppressed at the resonance wavelength of the ring resonator. The degree of suppression can be controlled by varying the coupling strength between the waveguide and the ring resonator, while the resonance wavelength can be controlled by the geometry and size of the ring. However, since a single ring resonator has multiple modes each with a different wavelength separated by its free spectral range (FSR), the additional suppression at other wavelengths may undermine the signal. Therefore, the ideal FSR off the ring resonators needs to be larger than the measurement window. For this application, we aim the FSR to be 1 larger than 30 nm . Our initial measurement results revealed two major challenges for this application. First, the FSR of the ring resonators is limited by the bending loss of ring resonators. In a standard 220 nm silicon-on-insulator material platform, the FSR of ring resonators cannot exceed 30 nm; Second, due to the wafer thickness variation and fabrication inaccuracy, the achievable accuracy in the resonance wavelength of a fabricated single ring resonator is only ~1.5 nm. In this work, we report our novel solutions to the above two challenges. For the first one, we have developed a novel structure based on the Vernier effect to greatly raise the FSR of ring resonators. Serially coupled Vernier ring structures is a typical approach to increase the FSR without encountering bending loss, but it requires restrictive matching of the coupling and optical loss of the rings and any imperfect matching can result in even noisier signals. On the contrary, our structure, as shown in shown in Fig. 1, does not require the restrictive matching. The signals of two output ports in our structure marked in Fig. 1 will be added together to form the final output signal, and Fig. 2 shows the finite-difference time-domain (FDTD) simulation results of the final output signal. As can be seen, the FSR of the entire structure is well-beyond 60 nm with little noise at other wavelengths. For the second one, we have developed an easy-to-implement method to permanently tune the resonance wavelengths of ring resonators within 0.1 nm accuracy. The tuning mechanism is based on the property of hydrogen silsesquioxane (HSQ) resist. As a negative tone electron beam resist, HSQ upon exposure will cross-link and eventually form SiO2. The refractive 2 index of HSQ resist and formed SiO2 are slightly different , enabling the tuning. By having a thin layer of HSQ resist on top of ring resonator structures followed by SiO2 cladding, the resonance wavelengths of ring resonators can be post-tuned Advances in Optical Astronomical Instrumentation 2019, edited by Simon Ellis, Céline d'Orgeville, Downloaded From: https://www.spiedigitallibrary.org/conference-proceedings-of-spie on 23 Sep 2020 Terms of Use: https://www.spiedigitallibrary.org/terms-of-use through electron beam exposure. We have found that, within 5 nm tuning range, the resonance wavelength shift and dosage applied obeys a linear relationship. So a simple calibration beforehand can result in resonance wavelength tuning within 0.1 nm accuracy. The transmission spectra of a 3-ring device before and after tuning is shown in Fig. 3.
Astronomical optics↗
Thermodynamic Origin of Reaction Non-Uniformity in Battery Porous Electrodes and Its Mitigation
The development of non-uniform reaction current distribution within porous electrodes is a ubiquitous phenomenon during battery charging/discharging and frequently controls the rate performance of battery cells. Reaction inhomogeneity in porous electrodes is usually attributed to the kinetic limitation of mass transport within the electrolyte and/or solid electrode phase. In this work, however, we reveal that it is also strongly influenced by the intrinsic thermodynamic behavior of electrode materials, specifically the dependence of the equilibrium potential on the state of charge: the electrode reaction becomes increasingly non-uniform when the slope of the equilibrium potential curve is reduced. We employ numerical simulations and equivalent circuit model to elucidate such a correlation and show that the degree of reaction inhomogeneity and the resultant discharge capacity can be predicted by a dimensionless reaction uniformity number. For electrode materials that have equilibrium potentials insensitive to the state of charge and exhibit significant reaction non-uniformity, we demonstrate several approaches to spatially homogenizing the reaction current inside porous electrodes, including matching the electronic and ionic resistances, introducing graded electronic conductivity and reducing the surface reaction kinetics.
25 ENERGY STORAGE↗
Experimental study of resistive focusing of relativistic electrons for electron fast ignition
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Physics - Plasma physics↗
Low-power anisotropic molecular electronic memristors
A molecular electronic memristor, programmable resistive memory device, promises to revolutionize next-generation flexible data storage units, offering fast, dense and ultralow power solutions. Here we report anisotropic resistive switching in molecular κ-(BEDT-TTF) 2 Cu[N(CN) 2 ]Cl memristors, consisting of alternatively segregated bis(ethylenedithio)tetrathiafulvalene (BEDT-TTF) and Cu[N(CN) 2 ]Cl layers. Electron resistance switching behavior controlled by charge tunneling in molecular memristors show a low set voltage of 0.5 V (10 V/cm) with the ON/OFF ratio of 2.3×10 3 along a-axis and a high-level endurance of 1.25×10 4 cycles along all axes. Finally, the findings of such molecular electronic crystals promise for low-power data storage memristors.
36 MATERIALS SCIENCE↗
Reverse martensitic transformation on the corrosion behavior of a 2304 lean duplex stainless steel
This study investigates the influence of the reverse martensitic transformation on the corrosion behavior of 2304 lean duplex stainless steel (LDSS) at low temperatures (400–600°C). The steel underwent cold rolling, followed by isochronal annealing for 0.5 h. Phase transformations and microstructures were analyzed using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Corrosion resistance was evaluated using a syringe cell with cyclic potentiodynamic polarization in 0.6 M NaCl solution and double-loop electrochemical potentiokinetic reactivation in 0.5 M H 2 SO 4 + 0.001 M KSCN solution. A bimodal breakdown potential behavior, associated with either pitting or transpassivity, was observed in the as-received (AR) and samples annealed at 400°C. Pitting in the AR sample was associated with Al–Mg–Si–Ca–O inclusions, while pitting on the samples annealed at 400°C was linked to local reduced passive film resistance. Severe cold rolling enhanced the pitting resistance of 2304 LDSS. Selective electrochemical etching revealed preferential corrosion at phase interfaces and within the austenite phase. Additionally, annealing at 500°C to 600°C led to a marked decrease in pitting resistance and increased sensitization. Electron backscatter diffraction analysis of the corroded pits in the annealed specimens indicated that pits tend to nucleate and grow in α'-martensite/austenite regions. Furthermore, the nanostructure formed during low-temperature reversion, characterized by dislocation-cell martensite with high dislocation density and stacking faults, may adversely affect corrosion resistance due to heterogeneities associated with alloying element redistribution.
36 MATERIALS SCIENCE↗
Extreme Ultraviolet and Beyond Extreme Ultraviolet Lithography Using Amorphous Zeolitic Imidazolate Resists Deposited by Atomic/Molecular Layer Deposition
Amorphous zinc-imidazolate (aZnMIm) resists show potential to meet the demands for next-generation high-numerical aperture (high-NA) metal-containing extreme ultraviolet (EUV) resist materials, given their ease of deposition by atomic/molecular layer deposition (ALD/MLD) at thicknesses of 20 nm and below. Here, this study demonstrates that aZnMIm thin films, previously identified as high-resolution electron beam resists, can also function as negative-tone EUV photoresists. Water development achieves high sensitivity (5 mJ/cm 2 ) but leaves significant residue, while acetic acid development results in poor contrast. A hybrid approach─water followed by acetic acid─enables residue-free development with a sensitivity of 181 mJ/cm 2 . Dry development using 1,1,1,5,5,5-hexafluoroacetylacetone (hfacH) is also possible but shows lower sensitivity (375 mJ/cm 2 ) compared to wet development methods. EUV photoelectron spectroscopy (PES), reflectometry/EUV absorption, total electron yield (TEY), residual gas analysis (RGA), and time-of-flight secondary ion mass spectrometry (TOF-SIMS) were used to investigate the effects of EUV irradiation on aZnMIm resists. Reflectometry experiments reveal an aZnMIm EUV absorption coefficient of 6.2 μm –1 , while PES and TEY analyses show that, compared to poly(4-hydroxystyrene) (PHS), a polymer-based reference resist, aZnMIm emits more primary and secondary electrons but generates fewer slow electrons relative to its primary electron emission; its total electron yield is similar to that of poly(methyl methacrylate) (PMMA) resists. When exposed to EUV, aZnMIm predominantly outgasses H 2 , as determined by RGA. TOF-SIMS measurements demonstrate that high-dose EUV exposure only partially fragments the 2-methylimidazole (2MIm) organic linkers, unlike high-dose electron beam exposure, which is known to completely degrade them. Additionally, aZnMIm resists show promise for potential beyond EUV lithography (BEUVL) due to the presence of Zn, which provides higher sensitivity at a wavelength of 6.7 nm compared to other metal ions, such as Sn, that are currently used in the best-performing EUV metal–organic resists. TEY measurements demonstrate that aZnMIm emits nearly twice as many electrons as PHS at 6.7 nm. The BEUV TEY of aZnMIm also surpasses that of PMMA, poly(pentafluorostyrene), and poly(4-iodostyrene), with the latter two being known for their high EUV TEYs. This work provides insight into zeolitic imidazolate framework (ZIF)-based EUV and BEUV resists and highlights their potential for both wet and dry development.
lithography↗
Resistive hose modes in tokamak runaway electron beams
Beams of energetic runaway electrons are generated during disruptions in tokamaks, and fluid models are used to study their effects on macroscale dynamics. Linear computations of a massless, runaway electron beam coupled to MHD plasma show that resistive hose instabilities grow faster than tearing modes at large resistivity. Eigenvalue results with reduced models of the resistive hose instability are compared with results from the full MHD and beam system, showing that the resistive hose decouples from any plasma response. An estimate of plasma temperature at which growth of the resistive hose dominates tearing for post-disruption DIII-D plasma parameters is in a physically relevant regime.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory
Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a “Si-H···H-O” complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H···H-O complex will be the center for defect creation and device degradation. Finally, we also explain why such a center might be relatively easy to form during the hydrogen annealing process.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates
Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.
2D quantum devices↗
Effect of controlled pointlike disorder induced by 2.5-MeV electron irradiation on the nematic resistivity anisotropy of hole-doped (Ba,K)Fe 2 As 2
In-plane anisotropy of electrical resistivity was studied in samples of the hole-doped Ba 1–x K x Fe 2 As 2 in the composition range 0.21 ≤ x ≤ 0.26 where anisotropy changes sign. Low-temperature (~20 K) irradiation with relativistic 2.5 MeV electrons was used to control the level of disorder and residual resistivity of the samples. Modification of the stress-detwinning technique enabled measurements of the same samples before and after irradiation, leading to the conclusion of anisotropic character of predominantly inelastic scattering processes. Our main finding is that the resistivity anisotropy is of the same sign irrespective of residual resistivity, and remains the same in the orthorhombic C 2 phase above the reentrant tetragonal transition. Unusual T-linear dependence of the anisotropy Δρ ≡ ρ a (T) – ρ b (T) is found in pristine samples with x = 0.213 and x = 0.219 , without similar signatures in either ρ a (T) or ρ b (T). In this paper, we show that this feature can be reproduced by a phenomenological model of R. M. Fernandes et al. We speculate that onset of fluctuations of nematic order on approaching the instability towards the reentrant tetragonal phase contributes to this unusual dependence.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
A predictive analytical model of electrical transport in multi-principal-element alloys
A predictive analytical model is presented for the electrical conductivity of multi-principal-element alloys (MPEAs), including those containing aluminum, transition metals, and refractory metals. Given that the lattice parameter of the Wigner-Seitz cell of an MPEA is similarly variable to a bulk metallic glass, it is postulated that electron scattering can be approximated by a series of two-level systems. Here, the resulting reduced-order model enabled an accurate determination of electrical resistivity and electron thermal conductivity based on the scattering of electrons in a two-level system across a Bloch-potential-based virtual crystal approximation. Model results are compared to experimental four-point probe electrical resistivity measurements between 300 K and 700 K for Al 0.3 CoCrCuFeNi, CoCrFeMnNi, (CoCrFeMnNi) 0.98 W 0.02 , (CoCrFeMnNi) 0.95 W 0.05 , and Nb 4 Ta 4 V 3 Ti, for model validation.
Analytical model↗
Li-Ion Battery Electrode Contact Resistance Estimation by Mechanical Peel Test
Li-ion battery electrode electronic properties, including bulk conductivity and contact resistance, are critical parameters affecting cell performance and fast-charge capability. Contact resistance between the coating and current collector is often the largest electronic resistance in an electrode and is affected by chemical, microstructural, and interfacial variations. Direct measurements of contact resistance and bulk conductivity have proven to be challenging. In their absence, a mechanical electrode peel test is often used to compare adhesion and electrical contact resistance. However, using a micro-flexible-surface probe, contact resistance can be directly determined. Here, this work compares contact resistance and mechanical peel strength of multiple commercial-grade HE5050 and NCM523 cathodes and graphite and silicon anodes. It was found that peel strength correlates well with contact resistance in a carefully curated data set (p < 0.05) and in some situations may be a good metric to estimate electrical properties. However, there were distinct outliers in the data set, indicating that peel strength may not accurately reflect electrical properties when there is significant variation in electrode composition. These results illustrate the value of the micro-flexible-surface probe in quantifying contact resistance and bulk conductivity to better understand how battery composition and processing steps affect microstructure and resulting cell performance.
25 ENERGY STORAGE↗