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At least 55 records · Page 3

Influence of Silicate Melt Composition on Metal/Silicate Partitioning of W, Ge, Ga and Ni

The depletion of the siderophile elements in the Earth's upper mantle relative to the chondritic meteorites is a geochemical imprint of core segregation. Therefore, metal/silicate partition coefficients (Dm/s) for siderophile elements are essential to investigations of core formation when used in conjunction with the pattern of elemental abundances in the Earth's mantle. The partitioning of siderophile elements is controlled by temperature, pressure, oxygen fugacity, and by the compositions of the metal and silicate phases. Several recent studies have shown the importance of silicate melt composition on the partitioning of siderophile elements between silicate and metallic liquids. It has been demonstrated that many elements display increased solubility in less polymerized (mafic) melts. However, the importance of silicate melt composition was believed to be minor compared to the influence of oxygen fugacity until studies showed that melt composition is an important factor at high pressures and temperatures. It was found that melt composition is also important for partitioning of high valency siderophile elements. Atmospheric experiments were conducted, varying only silicate melt composition, to assess the importance of silicate melt composition for the partitioning of W, Co and Ga and found that the valence of the dissolving species plays an important role in determining the effect of composition on solubility. In this study, we extend the data set to higher pressures and investigate the role of silicate melt composition on the partitioning of the siderophile elements W, Ge, Ga and Ni between metallic and silicate liquid.

Singletary, S. J.↗

Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt

A saturated solution of silicon and an element such as carbon having a segregation coefficient less than unity is formed by placing a solid piece of carbon in a body of molten silicon having a temperature differential decreasing toward the surface. A silicon carbide seed crystal is disposed on a holder beneath the surface of the molten silicon. As a rod or ribbon of silicon is slowly pulled from the melt, a supersaturated solution of carbon in silicon is formed in the vicinity of the seed crystal. Excess carbon is emitted from the solution in the form of silicon carbide which crystallizes on the seed crystal held in the cool region of the melt.

Ciszek, T. F.↗

Effect of vertical magnetic field on convection and segregation in vertical Bridgman crystal growth

A previous finite-element analysis of vertical Bridgman growth for dilute and nondilute alloys is extended to include the effect of a vertically-aligned magnetic field in the limit of zero magnetic Reynolds number. Calculations are presented for growth of a dilute gallium-germanium alloy in a vertically stabilized Bridgman-Stockbarger system and in a furnace with a uniform temperature gradient imposed along the ampoule. Steady cellular convection driven by radial temperature gradients causes good axial and radial mixing in both systems without a magnetic field. A weak magnetic field decreases the intensity of convection and the effectiveness of solute mixing. The radial nonuniformity is greatest for an intermediate field strength. Stronger fields suppress flow recirculation completely, and lead to uniform solute segregation across the crystal and to diffusion-controlled axial segregation.

Kim, Do Hyun↗

Core-Mantle Partitioning of Volatile Elements and the Origin of Volatile Elements in Earth and Moon

Depletions of siderophile elements in mantles have placed constraints on the conditions on core segregation and differentiation in bodies such as Earth, Earth's Moon, Mars, and asteroid 4 Vesta. Among the siderophile elements there are a sub-set that are also volatile (volatile siderophile elements or VSE; Ga, Ge, In, As, Sb, Sn, Bi, Zn, Cu, Cd), and thus can help to constrain the origin of volatile elements in these bodies, and in particular the Earth and Moon. One of the fundamental observations of the geochemistry of the Moon is the overall depletion of volatile elements relative to the Earth, but a satisfactory explanation has remained elusive. Hypotheses for Earth include addition during accretion and core formation and mobilized into the metallic core, multiple stage origin, or addition after the core formed. Any explanation for volatile elements in the Earth's mantle must also be linked to an explanation of these elements in the lunar mantle. New metal-silicate partitioning data will be applied to the origin of volatile elements in both the Earth and Moon, and will evaluate theories for exogenous versus endogenous origin of volatile elements.

Righter, K.↗

Fluid flow in crystallization processes

Investigations of the interactions of heat, mass, and momentum transport in crystal growth from the melt are described. Studies of the mall-scale floating zone process and on a prototype of the vertical Bridgman growth system were emphasized. In both systems detailed numerical calculations are used to dissect the interplay between fluid convection and dopant segregation. These calculations are based on finite element techniques that make feasible the complete solution of solidification problems which include convection. Other numerical methods were developed for solving thermal models of crystal growth processes with melt/gas menisci and for simulating the microscale instabilities in solidification interfaces.

Brown, R. A.↗

Radial segregation induced by natural convection and melt/solid interface shape in vertical Bridgman growth

The roles of natural convection in the melt and the shape of the melt/solid interface on radial dopant segregation are analyzed for a prototype of vertical Bridgman crystal growth system by finite element methods that solve simultaneously for the velocity field in the melt, the shape of the solidification isotherm, and the temperature distribution in both phases. Results are presented for crystal and melt with thermophysical properties similar to those of gallium-doped germanium in Bridgman configurations with melt below (thermally destabilizing) and above (stabilizing) the crystal. Steady axisymmetric flow are classified according to Rayleigh number as either being nearly the growth velocity, having a weak cellular structure or having large amplitude cellular convention. The flows in the two Bridgman configurations are driven by different temperature gradients and are in opposite directions. Finite element calculations for the transport of a dilute dopant by these flow fields reveal radial segregation levels as large as sixty percent of the mean concentration. Segregation is found most severe at an intermediate value of Rayleigh number above which the dopant distribution along the interface levels as the intensity of the flow increases.

Chang, C. J.↗

Crystal growth of device quality GaAs in space

It was established that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail. It was further established that in compound semiconductors with a volatile constituent, control of stoichiometry is far more critical than any other crystal growth parameter. It was also shown that, due to suppression of nonstoichiometric fluctuations, the advantages of space for growth of semiconductor compounds extend far beyond those observed in elemental semiconductors. A novel configuration was discovered for partial confinement of GaAs melt in space which overcomes the two major problems associated with growth of semiconductors in total confinement. They are volume expansion during solidification and control of pressure of the volatile constituent. These problems are discussed in detail.

Gatos, H. C.↗

In Situ Determination of Siderophile Trace Elements in Metals and Sulfides in Enstatite Achondrites

Enstatite meteorites are identified by their extremely reduced mineralogy (1) and similar oxygen isotope composition (2). The enstatite meteorite clan incorporates both EH and EL chondrites, as well as a wide variety of enstatite achondrites, such as aubrites or anomalous enstatite meteorites (e.g. Mt. Egerton, Shallowater, Zaklodzie, NWA 2526). The role of nebular versus planetary processes in the formation of enstatite meteorites is still under debate (e.g. 3-5). Past studies showed a significant influence of metal segregation in the formation of enstatite achondrites. Casanova et al. (6) suggested incomplete metal-silicate segregation during core formation and attributed the unfractionated siderophile element patterns in aubrites metals to a lack of fractional crystallization in a planetary core. Recent studies suggest a significant role of impact melting in the formation of primitive enstatite chondrites (7) and identified NWA 2526 as a partial melt residue of an enstatite chondrite (8). To understand the nature of siderophile element-bearing phases in enstatite achondrites, establish links between enstatite achondrites and enstatite chondrites (9), and constrain planetary differentiation on their respective parent bodies and their petrogenetic histories, we present laser ablation ICP-MS measurements of metal and sulfide phases in Shallowater, Mt. Egerton, and the aubrites Aubres, Cumberland Falls, and Mayo Belwa.

vanAcken, D.↗

Natural convection in melt crystal growth - The influence of flow pattern on solute segregation

The results of two lines of research aimed at calculating the structure of the flows driven by buoyancy in small-scale crystal growth systems and at understanding the coupling between these flows, the shape of the solidification interface, and dopant segregation in the crystal are reviewed. First, finite-element methods are combined with computer-aided methods for detecting multiple steady solutions to analyze the structure of the buoyancy-driven axisymmetric flows in a vertical cylinder heated from below. This system exhibits onset of convection, multiple steady flows, and loss of the primary stable flow beyond a critical value of the Rayleigh number. Second, results are presented for calculations of convection, melt/solid interface shape, and dopant segregation within a vertical ampoule with thermal boundary conditions that represent a prototype of the vertical Bridgman growth system.

Brown, R. A.↗

The origin and chemical composition of the earth's core

The process of core formation in the earth is subject to the constraints that it be nearly simultaneous with accretion and yet occur in a manner that the mantle retains radiogenic Xe-129 produced from the extinct radioactivity of I-129 with a half life of 17.6 million y. From these constraints, it appears that the only feasible mechanism is the segregation of an Fe-FeS melt. Trace element abundances in major classes of meteorites and the silicate fractions of the earth show that not only there is a high depletion of sulphur in the crust and the mantle, but that it is even more highly depleted than the rare gases, water and the halogens. From the nature of this depletion pattern and the fact that any model of accretion of the earth will necessarily produce an Fe-FeS melt, it is concluded that the light element in the core is largely sulphur with minor amounts of carbon. A consequence of this mode of core formation is found to be the availability of K-40 radioactive heat production in the liquid core, estimated at about 10 to the 19th power erg/s at the present time.

Murthy, V. R.↗

Crystal growth of device quality GaAs in space

The present program has been aimed at solving the fundamental and technological problems associated with Crystal Growth of Device Quality in Space. The initial stage of the program was devoted strictly to ground-based research. The unsolved problems associated with the growth of bulk GaAs in the presence of gravitational forces were explored. Reliable chemical, structural and electronic characterization methods were developed which would permit the direct relation of the salient materials parameters (particularly those affected by zero gravity conditions) to the electronic characteristics of single crystal GaAs, in turn to device performance. These relationships are essential for the development of optimum approaches and techniques. It was concluded that the findings on elemental semiconductors Ge and Si regarding crystal growth, segregation, chemical composition, defect interactions, and materials properties-electronic properties relationships are not necessarily applicable to GaAs (and to other semiconductor compounds). In many instances totally unexpected relationships were found to prevail.

Gatos, H. C.↗

Low-Degree Partial Melting Experiments of CR and H Chondrite Compositions: Implications for Asteroidal Magmatism Recorded in GRA 06128 and GRA 06129 T

Studies of differentiated meteorites have revealed a diversity of differentiation processes on their parental asteroids; these differentiation mechanisms range from whole-scale melting to partial melting without the core formation [e.g., 1]. Recently discovered paired achondrites GRA 06128 and GRA 06129 (hereafter referred to as GRA) represent unique asteroidal magmatic processes. These meteorites are characterized by high abundances of sodic plagioclase and alkali-rich whole-rock compositions, implying that they could originate from a low-degree partial melt from a volatile-rich oxidized asteroid [e.g., 2, 3, 4]. These conditions are consistent with the high abundances of highly siderophile elements, suggesting that their parent asteroid did not segregate a metallic core [2]. In this study, we test the hypothesis that low-degree partial melts of chondritic precursors under oxidizing conditions can explain the whole-rock and mineral chemistry of GRA based on melting experiments of synthesized CR- and H-chondrite compositions.

Usui, T.↗

Lunar and Planetary Science XXXV: Terrestrial Planets: Building Blocks and Differentiation

The session "Terrestrial Planets: Building Blocks and Differentiation: included the following topics:Magnesium Isotopes in the Earth, Moon, Mars, and Pallasite Parent Body: High-Precision Analysis of Olivine by Laser-Ablation Multi-Collector ICPMS; Meteoritic Constraints on Collision Rates in the Primordial Asteroid Belt and Its Origin; New Constraints on the Origin of the Highly Siderophile Elements in the Earth's Upper Mantle; Further Lu-Hf and Sm-Nd Isotopic Data on Planetary Materials and Consequences for Planetary Differentiation; A Deep Lunar Magma Ocean Based on Neodymium, Strontium and Hafnium Isotope Mass Balance Partial Resetting on Hf-W System by Giant Impacts; On the Problem of Metal-Silicate Equilibration During Planet Formation: Significance for Hf-W Chronometry ; Solid Metal-Liquid Metal Partitioning of Pt, Re, and Os: The Effect of Carbon; Siderophile Element Abundances in Fe-S-Ni-O Melts Segregated from Partially Molten Ordinary Chondrite Under Dynamic Conditions; Activity Coefficients of Silicon in Iron-Nickel Alloys: Experimental Determination and Relevance for Planetary Differentiation; Reinvestigation of the Ni and Co Metal-Silicate Partitioning; Metal/Silicate Paritioning of P, Ga, and W at High Pressures and Temperatures: Dependence on Silicate Melt Composition; and Closure of the Fe-S-Si Liquid Miscibility Gap at High Pressure and Its Implications for Planetary Core Formation.

Source record↗

The Effect of Hydrogen Annealing and Sulfur Content on the Oxidation Resistance of PWA 1480

For many decades the dramatic effect of trace amounts of reactive elements on alumina and chromia scale adhesion has been recognized and widely studied. Although various theories have been used to account for such behavior, the connection between scale adhesion and sulfur segregation was initially reported by Smeggil et al. This study found strong surface segregation of sulfur from very low levels in the bulk which could then be curtailed by the addition of reactive elements. It was assumed that the reactive elements, which are strong sulfide formers, acted by getting sulfur in the bulk thus precluding sulfur segregation and weakening of the oxide-metal bond. Subsequent studies confirmed that adhesion could be produced by reducing the sulfur impurity level, without reactive elements. The understanding of this phenomenon has been applied to modern single crystal superalloys, where the addition of Y, although very effective, is problematic. Also problematic is definition of the level of sulfur that is acceptable and below which no further adhesion benefit is reached. Published works have indicated a broad transition defined by various materials and oxidation tests. The present study describes the oxidation behavior of one superalloy (PWA 1480) as a function of various sulfur contents produced by hydrogen annealing for various temperatures, times, and sample thicknesses. The purpose is to define more precisely a criterion for adhesion based on total sulfur reservoir and segregation potential.

Smialek, James L.↗

The metal to metal interface and its effect on adhesion and friction

The paper considers the interface between two bulk metals and the effect of this interface on adhesive bonding, resistance to tangential displacements, friction and the interfacial transport from one surface to another. Using Auger emission spectroscopy, field ion microscopy, and low energy electron diffraction techniques, the influence of surface orientation, lattice registry, crystal lattice structure and defects, metal surface chemistry and alloying on the characteristics of the interface was studied for noble, platinum, transition, and Group 4B metals. With dissimilar metals in contact, epitaxial transfer of the cohesively weaker to the cohesively stronger metal has been observed. Surface chemical activity of the noble and platinum metals is shown to affect interfacial behavior as does a valence bonding in the transition metals, and the degree of metallic nature in the Group 4B elements. Alloying elements, e.g., Si and Fe, can alter interfacial behavior by segregation to the surface of metals or by altering bulk properties such as crystal transformation kinetics.

Buckley, D. H.↗

The chemical composition of soil from the Apollo 16 and Luna 20 sites.

The concentrations of the rare earth elements K, Rb, Sr, Ba, U, Zr, and Cr for the Luna 20 soil and four different Apollo 16 soils are reported. These trace element abundances imply: (1) that the lunar highlands consist of a mixture of rocks rich in large ion lithophile (LIL) elements and LIL-element improverished anorthosites; or (2) that the bulk of the aluminum-rich crust did not originate by upward segregation of plagioclase in a primitive liquid shell. The Luna 20 soil is distinguished from the Apollo 16 soil by lower aluminum and LIL element abundances.

Bansal, B. M.↗

Compositional inhomogeneities in a single Icelandic tholeiite flow

New trace element analyses of 25 basalt samples from a vertical traverse in an 11 m thick flow of Icelandic tholeiite show compositional differences which exceed analytical uncertainties and are random with respect to height. These variations suggest a short-range segregation model in which the amounts of phenocrysts, groundmass materials, and residual liquid vary randomly in different samples of the flow; a least-squares method is applied to determine if these variations reflect different proportions of crystallizing phases and residual liquid. Monte Carlo computations indicate that short-range segregation results in inhomogeneity of a magnitude of interflow compositional differences; this causes incoherence in elements with different geochemical behaviors while preserving coherence in elements of similar behavior.

Lindstrom, M. M.↗

The metal to metal interface and its effect on adhesion and friction

The nature of the interface, adhesion and friction properties of noble metals, platinum metals, Group IV (B) metals and transition metals were considered. The surface chemical activity of the noble and platinum metals is shown to effect metal to metal interfaces as does a valance bonding in the transition metals. With the Group IV (B) metals the degree of metallic nature of the elements is shown to effect interfacial behavior. The effect of surface segregation of alloy constituents such as silicon in iron and its influence on the metal to metal interface is discussed. In addition the effect of alloy constituents on changes in bulk properties such as transformations in tin are shown to effect interfacial adhesion and friction behavior.

Buckley, D. H.↗