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To achieve high thermal-to-electric energy conversion efficiency, it is desirable to operate thermoelectric generator devices over large temperature gradients and also to maximize the performance of the thermoelectric materials used to build the devices.
We report improvements in conversion efficiency for third harmonic generation in sodium and rubidium vapor. 30-psec pulses of radiation at 1.064 micron have been converted to 0.3547 micron with an energy conversion efficiency of 10%. Factors limiting conversion efficiency are discussed.
Thermophotovoltaic cells containing multiple quantum wells have been invented as improved means of conversion of thermal to electrical energy. The semiconductor bandgaps of the quantum wells can be tailored to be narrower than those of prior thermophotovoltaic cells, thereby enabling the cells to convert energy from longer-wavelength photons that dominate the infrared-rich spectra of typical thermal sources with which these cells would be used. Moreover, in comparison with a conventional single-junction thermophotovoltaic cell, a cell containing multiple narrow-bandgap quantum wells according to the invention can convert energy from a wider range of wavelengths. Hence, the invention increases the achievable thermal-to-electrical energy-conversion efficiency. These thermophotovoltaic cells are expected to be especially useful for extracting electrical energy from combustion, waste-heat, and nuclear sources having temperatures in the approximate range from 1,000 to 1,500 C.
A family of proposed miniature sources of power would exploit the direct conversion of the kinetic energy of alpha particles into electricity. In addition to having long operational lives, these sources are expected to operate with energy-conversion efficiencies from 70 to 90 percent. A power source as proposed (see figure) would be an electrolytic cell in which liquid gallium would serve as both an electrolyte and an energy-conversion medium. The cell would contain an iridium cathode and a zirconium anode. The alpha particles, each with a kinetic energy approx.5.8 MeV, would be emitted by radioactive decay of Cm-244, which has a half-life of 18 years. The Cm-244 source would be positioned so that the a particles would enter the liquid gallium, where their kinetic energy would be dissipated mostly through ionization of Ga atoms, creating Ga(+) ions and free electrons. The electrons would be collected by iridium cathode, and the Ga(+) ions would be neutralized at the zirconium cathode by electrons returning after flowing through an external circuit. Gallium is a candidate for use as the electrolyte and the energy-conversion medium because in the liquid state it is a semimetal: its electrical conductivity is greater than that of a typical semiconductor but small in comparison with the conductivities of metals. Consequently, in liquid gallium, electrons and Ga(+) can exist without immediate recombination and can be moved by electric fields. It is expected that electric fields, resulting at least partly from the difference between the work functions of the electrode metals, would move the electrons and ions to their respective electrodes. The open-circuit potential of the cell is expected to be 1.62 V - equal to the difference between the work functions of iridium and zirconium. Unlike in a solid-state energy conversion medium, the impingement of energetic a particles would not give rise to displacement damage in the liquid gallium. Hence, the cell should have a long life, limited only by the half-life of Cm-244. A cell having a volume less than 25 cu mm, containing 1 curie of Cm-244 (the curie is a unit of radioactivity equal to 3.7 10(exp 10) disintegrations per second) is expected to deliver a current between 7 and 12 mA, which, at the expected open-circuit potential, would provide a power in the approximate range of 11 to 20 mW.
Tunable radiation, at ultraviolet wavelengths, is produced by Raman shifting a modified 285-mJ ArF excimer laser. Multiple Stokes outputs are observed in H2, CH4, D2, N2, SF6, and CF4 (20, 22, 53, 21, 2.1, and 0.35 percent, respectively). Numbers in parentheses are the first Stokes energy conversion efficiencies. We can access 70 percent of the frequency range 42000-52000 cm (exp -1) (190-240 nm) with Stokes energies that vary from 0.2 microJoule to 58 mJ inside the Raman cell. By using 110 mJ of pump energy and D 2 , the tunable first Stokes energy varies over the 29-58 mJ range as the wavelength is tuned over the 204-206 nm range. Dependence on input energy, gas pressure, He mixture fraction, and circulation of the gas in the forced convection Raman cell is discussed; Stokes conversion is also discussed for laser repetition rates from 1 to 100 Hz. An empirical equation is given to determine whether forced convection can improve outputs for a given repetition rate.
InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.
A light source is described for the efficient generation of 1.54-micron for eye-safe aerosol lidar operation. The system is based upon an Nd:YAG laser at 1.06 micron which is then Raman-shifted in methane to produce light at the first Stokes wavelength of 1.54 micron. First Stokes light generated in the backward direction was retroreflected back into the Raman cell for amplification in the tail of the 10 ns pump beam. The energy conversion efficiency and the spatial beam quality of the amplified first Stokes were found to be adversely affected when operated at higher repetition rates due to a thermal gradient produced in the generation region. A Stokes energy of 25 mJ was obtained for a pumping energy of 140 mJ at a repetition rate of 10 Hz. The beam divergence of the amplified Stokes radiation was measured to be less than 1 mrad. The optimized results demonstrate the applicability of this radiation for eye-safe lidar measurements.
The photosynthetic production of Br2 and Cl2 and the photocatalytic production of I2 from aqueous solutions of the respective halide ions in the presence of platinized semiconducting n-TiO2 powder are reported. Reactions were produced in 2-3 M oxygen-saturated aqueous solutions of KI, KBr or NaCl containing Pt-TiO2 powder which were irradiated by a high-pressure mercury lamp at a power of 400 mW/sq cm. Halogens are found to be produced in greater quantities when platinized TiO2 powders are used rather than pure TiO2, and rates of halogen production are observed to increase from Cl2 to Br2 to I2. The presence of the synthetic reactions producing Br2 and Cl2 with a net influx of energy indicates that an effective separation of the photoproduced electron-hole pair occurs in the semiconductor. Quantum efficiencies of the reaction, which increase with decreasing solution pH, are found to be as high as 30%, implying a solar-to-chemical energy conversion efficiency between 0.03% and 3% for the case of chlorine production. It is concluded that the photoproduction of halogens may be of practical value if product halogens are efficiently removed from the reaction cell.
Results of Ge film recrystallization using focused laser beams and GaAs film growth on such layers in the making of high efficiency thin-film AMOS solar cells are discussed. Since a conversion efficiency of 14% was obtained for an AMOS cell fabricated on sliced bulk polycrystalline GaAs, high efficiency cells are being developed by chemically vapor-depositing GaAs films on previously recrystallized evaporated Ge films to minimize the grain boundary (GB) effects. Schottky barrier solar cells made on sliced polycrystalline GaAs wafers were studied to investigate the effects of grain boundaries on cell properties and the potential efficiency of GaAs thin-film cells. Ge film recrystallization and the chemical vapor deposition (CVD) of the 2 to 3 micron thick GaAs films are described. AMOS solar cells with 100 Angstrom thick Ag metallization were made on CVD GaAs/recrystallized Ge/W substrates with an energy conversion efficiency of 8%.
Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.
A first principles pn junction device model has predicted new designs for high voltage, high efficiency InP solar cells. Measured InP material properties were applied and device parameters (thicknesses and doping) were adjusted to obtain optimal performance designs. Results indicate that p/n InP designs will provide higher voltages and higher energy conversion efficiencies than n/p structures. Improvements to n/p structures for increased efficiency are predicted. These new designs exploit the high absorption capabilities, relatively long diffusion lengths, and modest surface recombination velocities characteristic of InP. Predictions of performance indicate achievable open-circuit voltage values as high as 943 mV for InP and a practical maximum AM0 efficiency of 22.5 percent at 1 sun and 27 C. The details of the model, the optimal InP structure and the effect of individual parameter variations on device performance are presented.
Work on the development of low cost, high energy per unit area solar cell modules was conducted. Hexagonal solar cell and module efficiencies, module packing ratio, and solar cell design calculations were made. The cell grid structure and interconnection pattern was designed and the module substrates were fabricated for the three modules to be used. It was demonstrated that surface macrostructures significantly improve cell power output and photovoltaic energy conversion efficiency.
The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.
As NASA develops plans for more and more ambitious missions into space, it is the job of NASA's researchers to develop the technologies that will make those planed missions feasible. One such technology is energy conversion. Energy is all around us; it is in the light that we see in the chemical bonds that hold compounds together, and in mass itself.Energy is the fundamental building block of our universe, yet it has always been straggle for humans to convert this energy into useable forms, like electricity. For space-based applications, NASA requires efficient energy conversion method that require little or no fuel.
Completely integrated thermophotovoltaic (TPV) power sources in the range of 100 to 500 watts are being developed. The technical approach taken in this project focuses on optimizing the integrated performance of the primary subsystems in order to yield high energy conversion efficiency and cost effectiveness. An important aspect of the approach is the use of a narrow band fibrous emitter radiating to a bandgap matched photovoltaic array to minimize thermal and optical recuperation requirements, as well as the non-recoverable heat losses. For the prototype system, fibrous ytterbia emitters radiating in a narrow band centered at 980 nm are matched with high efficiency silicon photoconverters. The integrated system includes a dielectric stack filter for optical energy recovery and a ceramic recuperator for thermal energy recovery. The prototype TPV system uses a rapid mix distributed fuel delivery system with controlled feeding of the fuel and heated air into a flame at the surface of the emitter. This makes it possible to operate at air preheat temperatures well above the auto-ignition temperature of the fuel thereby substantially increasing the system efficiency. The system has been operated with air preheat temperatures up to 1367 K and has produced a uniform narrow band radiation over the surface of the emitter with this approach. The design of the system is described and test data for the system and some of the key components are presented. The results from a system model, which show the impact of various parameters on system performance, are also discussed.
A fully dedicated nuclear-electrolytic hydrogen-production facility, based on advanced (1985) technology, has been synthesized and assessed at the conceptual level. The facility integrates an HTGR operating a binary shaftpower-extraction cycle at 980 C top temperature, direct dc electricity generation via acyclic generators, and high-current density high-pressure electrolyzers based on the solid polymer electrolyte approach. All subsystems are close-coupled and optimally interfaced. Pipeline-pressure hydrogen and coproduct oxygen are produced at 6900 kPa. On consistent costing bases, the advanced facility concept was found to provide hydrogen costs that were approximately half those associated with conventional, contemporary-technology nuclear electrolysis. The nuclear heat-to-hydrogen energy conversion efficiency for the advanced system was estimated as 43%, against 25% for the baseline present-day approach.
The concept of an advanced-technology (viz., 1985 technology) nuclear-electrolytic water electrolysis facility was assessed for hydrogen production cost and efficiency expectations. The facility integrates (1) a high-temperature gas-cooled nuclear reactor (HTGR) operating a binary work cycle, (2) direct-current (d-c) electricity generation via acyclic generators, and (3) high-current-density, high-pressure electrolyzers using a solid polymer electrolyte (SPE). All subsystems are close-coupled and optimally interfaced for hydrogen production alone (i.e., without separate production of electrical power). Pipeline-pressure hydrogen and oxygen are produced at 6900 kPa (1000 psi). We found that this advanced facility would produce hydrogen at costs that were approximately half those associated with contemporary-technology nuclear electrolysis: $5.36 versus $10.86/million Btu, respectively. The nuclear-heat-to-hydrogen-energy conversion efficiency for the advanced system was estimated as 43%, versus 25% for the contemporary system.
The greatest gains in solar energy conversion efficiency of p-n-junction silicon solar cells come from increasing the open-circuit voltage V sub OC; it is important to understand and characterize the material parameters that limit the V sub OC. Strong experimental evidence exists to support the assertion that either an anomalously large minority carrier charge storage or an anomalously small minority carrier lifetime in the quasi-neutral emitter region limits the open circuit voltage. A method is presented for measuring charge storage and effective lifetime. Static and transient measurements are analyzed using physical models of the solar cell characteristics. This analysis yields the emitter charge storage and life-time, which then can be related to the various physical mechanisms, such as energy band gap shrinkage, that have been proposed earlier as responsible for limiting V sub OC.