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We characterize the electrical performance and reliabilities as potential space electronic parts under extreme low and high temperature environments extending nominal device specifications.
In the primary step of natural light harvesting, the solar photon energy is captured in a photoexcited electron–hole pair, or an exciton, in chlorophyll. Its conversion to chemical potential occurs in the special pair reaction center, which is reached by downhill ultrafast excited-state energy transport through a network of chromophores. Being inherently quantum, transport could in principle occur via a matter wave, with vast implications for efficiency. How long a matter wave remains coherent is determined by the intensity by which the exciton is disturbed by the noisy biological environment. The stronger this is, the stronger the electronic coupling between chromophores must be to overcome the fluctuations and phase shifts. The current consensus is that under physiological conditions, quantum coherence vanishes on the 10-fs time scale, rendering it irrelevant for the observed picosecond transfer. Yet, at low-enough temperature, quantum coherence should in principle be present. Here, we reveal the onset of longer-lived electronic coherence at extremely low temperatures of ∼20 K. Using two-dimensional electronic spectroscopy, we determine the exciton coherence times in the Fenna–Matthew–Olson complex over an extensive temperature range. At 20 K, coherence persists out to 200 fs (close to the antenna) and marginally up to 500 fs at the reaction center. It decays markedly faster with modest increases in temperature to become irrelevant above 150 K. At low temperature, the fragile electronic coherence can be separated from the robust vibrational coherence, using a rigorous theoretical analysis. We believe that by this generic principle, light harvesting becomes robust against otherwise fragile quantum effects.
Abstract This paper reports on the refinement (building on (Hatch D.R. et al 2022 Phys. Plasmas 29 062501)) and application of simple formulas for electron heat transport from electron temperature gradient (ETG) driven turbulence in the pedestal. The formulas are improved by (1) improving the parameterization for certain key parameters and (2) carefully accounting for the impact of geometry and shaping in the underlying gyrokinetic simulation database. Comparisons with nonlinear gyrokinetic simulations of ETG transport in the MAST pedestal demonstrate the model’s applicability to spherical tokamaks in addition to standard aspect ratio tokamaks. We identify bounds for model applicability: the model is accurate in the steep gradient region, where the ETG turbulence is largely slab-like, but accuracy decreases as the temperature gradient becomes weaker in the pedestal top. We use the formula to model the electron temperature profile in the pedestal for four experimental scenarios while extensively varying input parameters to represent uncertainties. In all cases, the predicted electron temperature profile exhibits extreme sensitivity to separatrix temperature and density, which has implications for core-edge integration. The model reproduces the electron temperature profile for high η e = L n e / L T e scenarios but not for low η e scenarios in which microtearing modes (MTMs) have been identified. We develop a proof-of-concept model for MTM transport and explore the relative roles of ETG and MTM in setting the electron temperature profile.
Electronics designed for space exploration missions must display efficient and reliable operation under extreme temperature conditions. For example, lunar outposts, Mars rovers and landers, James Webb Space Telescope, Europa orbiter, and deep space probes represent examples of missions where extreme temperatures and thermal cycling are encountered. Switching transistors, small signal as well as power level devices, are widely used in electronic controllers, data instrumentation, and power management and distribution systems. Little is known, however, about their performance in extreme temperature environments beyond their specified operating range; in particular under cryogenic conditions. This report summarizes preliminary results obtained on the evaluation of commercial-off-the-shelf (COTS) automotive-grade NPN small signal transistors over a wide temperature range and thermal cycling. The investigations were carried out to establish a baseline on functionality of these transistors and to determine suitability for use outside their recommended temperature limits.
Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.
Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.
A range of aerospace application related to planetary exploration and aeronautic engine operations require Smart Sensor System technologies operational in harsh environments. A Smart Sensor System as described here implies the use of sensors combined with electronics and other supporting technologies. For example, missions to the surface of planets like Venus or Mercury are challenged by extreme temperatures and environments, e.g., extended Venus operation 465°C [1]. In response, NASA has been developing capabilities for a small lander that is designed to operate for months in the extreme temperatures. These capabilities span electronics, sensors, communications, and power. Such a lander would enable new revolutionary science. Similar game changing capabilities are enabled by the introduction of high temperature smart systems into aeronautic engine applications to enable distributed intelligence within the engine system [2]. Core to meeting these applications is operational harsh environment electronics, corresponding sensor systems, and their integration. This presentation concentrates on the status of Smart System technologies emphasizing the role of Silicon Carbide (SiC) electronics and sensors. For example, SiC integrated circuit (IC) electronics have matured to a state where a simple long-life scientific probe is feasible for extended Venus surface operations [1, 3]. Maturation of these high temperature electronics and other technologies has been part of NASA projects to provide an operational system for in situ exploration of the Venus surface for up to 60 days [1,3-4]. This is in parallel to work expanding the capabilities of the sensor technology to provide science measurements on the Venus surface. This technology development, as well as that for other planetary applications and intelligent high temperature engine operations, will be discussed.
In many future NASA missions, such as deep space planetary exploration and the Next Generation Space Telescope, electrical components and systems must operate reliably and efficiently in extremely low temperature environments. Most modern electronic components cannot operate below moderately low operating temperatures (-40 to -55 C). The low-temperature electronics program at the NASA Lewis Research Center is focusing on the development and characterization of low-temperature components and the integration of the developed devices into demonstrable very low-temperature (-200 C) power systems such as dc-dc converters. Such low-temperature electronics will not only tolerate hostile environments but also will reduce system size and weight by eliminating radioisotope heating units, thereby reducing launch cost, improving reliability and lifetime, and increasing energy densities. Low-temperature electronic components will also have a great influence on terrestrial applications such as medical instrumentation, magnetic levitation transportation systems, and arctic and antarctic exploration. Lewis researchers are now performing extensive evaluations of commercially available as well as custom-made devices. These include various types of energy storage and signal capacitors, power switching devices, magnetic and superconducting materials, and primary lithium batteries, to name a few.
Professor Elbuluk will develop circuits for operation at extremely low temperatures down to -230 C. As a part of his work, he will evaluate (at low temperatures) devices to be used in the circuits.
Temperature tolerant electronics and long life survivability are key capabilities required for future NASA/JPL missions. Current approaches to electronics for extreme environments focus on component level robustness and hardening. Compensation techniques, e.g., as offered by bias cancellation circuits, have also been employed. This paper presents a novel approach, based on evolvable hardware technology, which allows adaptive in situ circuit redesign/reconfiguration during the operation in the environment. This technology would complement material/device advancements and bring closer the success of missions in harsh environments. Additional information is contained in the original extended abstract.
Power-over-Fiber (PoF) technology has been used extensively in settings where high voltages require isolation from ground and electromagnetic isolation is critical. In cryogenic environments, PoF offers a reliable power transmission technology, leveraging optical fibers to transfer power with minimal system degradation. PoF technology excels in maintaining low noise levels and isolation when delivering power to sensitive electronic systems operating in extreme temperature ranges and high voltage environments. Here, in a novel application of PoF for a HEP detector, power is provided to photon detector modules located on a surface at ~300 kV with respect to ground in the planned DUNE experiment. This summary paper of the PoF talk at the 16th PISA Meeting on Advanced Detectors highlights the R&D effort of PoF in extreme conditions and underscores its capacity to revolutionize power delivery and management in critical applications offering a dependable solution with low noise, optimal efficiency, and superior isolation. The DUNE (Abi et al., 2020) experiment will soon deploy large liquid argon (LAr) time projection chambers (TPC) to detect neutrino interactions and other particle physics phenomena. In addition to the particle tracking provided by the TPC, photon detectors, powered by a first ever PoF system, in the cryostat will leverage the high scintillation light yield of LAr to provide crucial timing and additional calorimetric information.
Power-over-Fiber (PoF) technology has been used extensively in settings where high voltages require isolation from ground. In a novel application of PoF, power is provided to photon detector modules located on a surface at ∼ 300 kV with respect to ground in the planned DUNE experiment. In cryogenic environments, PoF offers a reliable means of power transmission, leveraging optical fibers to transfer optical power. PoF technology excels in maintaining low noise levels when delivering power to sensitive electronic systems operating in extreme temperatures and high voltage environments. This paper presents the R&D effort of PoF in extreme conditions and underscores its capacity to revolutionize power delivery and management in critical applications, offering a dependable solution with low noise, optimal efficiency (∼ 51%), and superior isolation.
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This paper presents the results of NASA’s COLDTECH development entitled “Cold Survivable Distributed Motor Controller (CSDMC)”. This work addresses the need to lower the mass, power and volume of the motor control electronics and its associated cabling. Landed payload mass of ocean world missions typically requires a spacecraft launch mass of 7-10x the landed mass due to the required propellant to get the payload to the surface. Reduction of landed mass leads to cheaper, more frequent missions and/or increased science return. This work addresses this need by developing a distributed electronics architecture, which places control and power electronics near or at actuators and instruments. The outcome of this effort will result in a 10X reduction in harness mass, enabling a significant increase in science payload which then enables more capable sample acquisition, delivery and analysis systems on these missions. Placing the control and power conversion electronics at or near the actuators or instruments is the cornerstone of our distributed architecture. To do this, we developed the technology necessary to distribute the electronics and place them on a shared interface and power bus. This enables a significant reduction in cable mass along with its associated complexity. This allows spacecraft designers to take advantage of volume at the extremities that would normally not be utilized. In this paper we discuss the technologies and system design to achieve these goals in support of ocean world missions. These technologies include the development of our motor control modules, a point of load regulator and isolated converter modules along with the packaging technology necessary to allow our electronics to survive the extreme temperatures.
Here we report a comparative study of three rectifying gate metals, W, Pd, and Pt/Au, on ultrawide bandgap Al 0.86 Ga 0.14 N barrier/Al 0.7 Ga 0.3 N channel high electron mobility transistors for use in extreme temperatures. The transistors were electrically characterized from 30 to 600 °C in air. Of the three gate metals, the Pt/Au stack exhibited the smallest change in threshold voltage (0.15 V, or 9% change between the 30 and 600 °C values, and a maximum change of 42%), the highest on/off current ratio (1.5 × 10 6 ) at 600 °C, and a modest forward gate leakage current (0.39 mA/mm for a 3,V gate bias) at 600 °C. These favorable results showcase AlGaN channel high electron mobility transistors' ability to operate in extreme temperature environments.
A paper describes advanced ceramic column grid array (CCGA) packaging interconnects technology test objects that were subjected to extreme temperature thermal cycles. CCGA interconnect electronic package printed wiring boards (PWBs) of polyimide were assembled, inspected nondestructively, and, subsequently, subjected to ex - treme-temperature thermal cycling to assess reliability for future deep-space, short- and long-term, extreme-temperature missions. The test hardware consisted of two CCGA717 packages with each package divided into four daisy-chained sections, for a total of eight daisy chains to be monitored. The package is 33 33 mm with a 27 27 array of 80%/20% Pb/Sn columns on a 1.27-mm pitch. The change in resistance of the daisy-chained CCGA interconnects was measured as a function of the increasing number of thermal cycles. Several catastrophic failures were observed after 137 extreme-temperature thermal cycles, as per electrical resistance measurements, and then the tests were continued through 1,058 thermal cycles to corroborate and understand the test results. X-ray and optical inspection have been made after thermal cycling. Optical inspections were also conducted on the CCGA vs. thermal cycles. The optical inspections were conclusive; the x-ray images were not. Process qualification and assembly is required to optimize the CCGA assembly, which is very clear from the x-rays. Six daisy chains were open out of seven daisy chains, as per experimental test data reported. The daisy chains are open during the cold cycle, and then recover during the hot cycle, though some of them also opened during the hot thermal cycle..
Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C
Advanced electronic systems designed for use in planetary exploration missions must operate efficiently and reliably under the extreme cold temperatures of deep space environment. In addition, spacecraft power electronics capable of cold temperature operation will greatly simplify the thermal management system by eliminating the need for heating units and associated equipment and thereby reduce the size and weight of the overall power system. In this study, film, mica, solid tantalum and electric double layer capacitors were evaluated as a function of temperature from room to liquid nitrogen in terms of their dielectric properties. These properties included capacitance stability and dielectric loss in the frequency range of 50 Hz to 100 kHz. DC leakage current measurements were also performed on the capacitors. The results obtained are discussed and conclusions are made concerning the suitability of the capacitors investigated for low temperature applications.