Search NASA⌕ Search

SEARCH · Search NASA

Results for “flake”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

Dynamically controlled random lasing with colloidal titanium carbide MXene

Control of lasing properties through tailorable and dynamically tunable materials and reconfigurable compositions can augment the performance of random lasers for a wide range of applications. Here, a colloid of randomly dispersed weakly scattering single-layer titanium carbide (Ti 3 C 2 T x ) MXene flakes embedded within rhodamine 101 gain medium is experimentally shown to provide feedback for random lasing. Additionally, in contrast to previously reported random laser systems where the optical properties of scatterers are static, the relative permittivity of Ti 3 C 2 T x MXene flakes can be varied under optical pumping due to the saturable absorption properties. Numerical simulations indicate that the observed nonlinear response of Ti 3 C 2 T x MXene flakes enables dynamically tunable random lasing. Thus, pumping the Ti 3 C 2 T x MXene flakes with a second optical source decreases the gain threshold required to obtain random lasing. Also, using numerical simulations, it is shown that the control over the intensity of the second pump enables tuning the field distribution of the random lasing modes. Considering the diversity of the MXenes family, the proposed MXene colloidal metamaterial design opens up a new avenue to advanced control of lasing properties for photonic applications.

36 MATERIALS SCIENCE↗

Statistical Modeling and Analysis of k -Layer Coverage of Two-Dimensional Materials in Inkjet Printing Processes

Two-dimensional layered materials/flakes, also known as crystalline atom-thick layer nanosheets, have recently been receiving great attention in electronics fabrication due to their unique and intriguing properties. The k-layer coverage area (i.e., the area covered by k number of overlapping layers) of the printed flake pattern significantly impacts on the properties of the printed electronics. In this work, we constructed a statistical model to describe the k-layer coverage of randomly distributed two-dimensional materials. A series of results are obtained to provide not only the expectation but also the variance of the coverage area. The boundary effects on the random flakes coverage are also studied. In addition, an approximated statistical testing approach is also developed in this work to detect abnormal coverage patterns. Furthermore, the case studies based on simulated data and real flakes images obtained from the inkjet printing process demonstrate the accuracy and effectiveness of the proposed model and analysis methods.

36 MATERIALS SCIENCE↗

Single Crystalline GeSe Van Der Waals Ribbons With Uniform Layer Stacking, High Carrier Mobility, and Adjustable Edge Morphology

Abstract Performance of the group IV monochalcogenide GeSe in solar cells, electronic, and optoelectronic devices is expected to improve when high‐quality single crystalline material is used rather than polycrystalline films. Crystalline flakes represent an attractive alternative to bulk single crystals as their synthesis may be developed to be scalable, faster, and with higher overall yield. However, large – and especially large and thin – single crystal flakes are notoriously hard to synthesize. Here it is demonstrated that vapor‐liquid‐solid growth combined with direct lateral vapor‐solid incorporation produces high‐quality single crystalline GeSe ribbons with tens of micrometers size and controllable thickness. Electron microscopy shows that the ribbons exhibit perfect equilibrium (AB) van der Waals stacking order without extended defects across the entire thickness, in contrast to the conventional case of substrate‐supported flakes where material is added via layer‐by‐layer nucleation and growth on the basal plane. Electrical measurements show anisotropic transport and a high Hall mobility of 85 cm 2 V −1 s −1 , on par with the best single crystals to date. Growth from mixed GeSe and SnSe vapors, finally, yields ribbons with unchanged structure and composition but with jagged edges, promising for applications that rely on ample chemically active edge sites, such as catalysis or photocatalysis.

99 GENERAL AND MISCELLANEOUS↗

Directing Charge Carriers and Ferroelectric Domains at Lateral Interfaces in van der Waals Heterostructures

Emergent phenomena in traditional ferroelectrics are frequently observed at heterointerfaces. Accessing such functionalities in van der Waals ferroelectrics requires the formation of layered heterostructures, either vertically stacked (similar to oxide ferroelectrics) or laterally stitched (without equivalent in 3D-crystals). Here, we investigate lateral heterostructures of the ferroelectric van der Waals semiconductors SnSe and SnS. A two-step process produces ultrathin crystals comprising an SnSe core laterally joined to an SnS edge-band, as confirmed by Raman spectroscopy, transmission electron microscopy (TEM) imaging, and electron diffraction. TEM shows a moiré pattern across the SnSe core due to coverage by an ultrathin SnS layer. The ability of the lateral interface (IF) to direct excited carriers, probed by cathodoluminescence, shows electron transfer over 560 nm diffusion length from the SnS edge-band. Large, thin flakes supporting ferroelectricity allow investigating domains and domain wall interactions in uniform crystals and lateral heterostructures. Polarized optical microscopy of sub-20 nm flakes consistently shows ⟨110⟩ oriented stripe domains with mirror-twin domain walls. Heterostructures adopt two domain configurations, with domains either constrained to the SnSe core or propagating across the entire SnSe–SnS flakes. Furthermore, the combined results demonstrate multifunctional van der Waals heterostructures with high-quality IFs presenting extraordinary opportunities for manipulating carrier flows and ferroelectric domain patterns.

2D ferroelectrics↗

Inhomogeneous Magnetic Anisotropy in an Fe 5– x GeTe 2 Nanoflake Observed by Imaging

Few-layer flakes of ferromagnetic Fe 5–x GeTe 2 with x = 0.3 (F5GT) possess a c-axis magnetocrystalline anisotropy that is large enough below ∼200 K to outcompete the easy-plane shape anisotropy, yielding distinctive magnetic microstructures with out-of-plane (OOP) magnetizations. Using photoemission electron microscopy (PEEM) with magnetic contrast from X-ray magnetic circular dichroism (XMCD) to study a thermally demagnetized h-BN-protected nanoflake of F5GT at 110 K, we observe a micron-scale coexistence between domains with OOP magnetizations (∼70% areal fraction) and hitherto unknown domains in which in-plane (IP) magnetization components dominate (∼30% areal fraction). The regions with dominant IP magnetization components do not correlate with small variations of flake thickness (6–10 nm) and instead arise from local changes of magnetocrystalline anisotropy due to a hitherto unidentified chemical inhomogeneity that we suggest to be a higher concentration of Fe vacancies. Our observation of micron-scale inhomogeneity would likely be missed if imaging a single flake orientation and should affect the viability and performance of van der Waals (vdW) spintronic devices with F5GT electrodes.

2D materials↗

Emergent layer stacking arrangements in c-axis confined MoTe 2

The layer stacking order in 2D materials strongly affects functional properties and holds promise for next-generation electronic devices. In bulk, octahedral MoTe 2 possesses two stacking arrangements, the ferroelectric Weyl semimetal T d phase and the higher-order topological insulator 1T' phase. However, in thin flakes of MoTe 2 , it is unclear if the layer stacking follows the T d , 1T', or an alternative stacking sequence. Here, we use atomic-resolution scanning transmission electron microscopy to directly visualize the MoTe 2 layer stacking. In thin flakes, we observe highly disordered stacking, with nanoscale 1T' and T d domains, as well as alternative stacking arrangements not found in the bulk. We attribute these findings to intrinsic confinement effects on the MoTe 2 stacking-dependent free energy. Our results are important for the understanding of exotic physics displayed in MoTe 2 flakes. More broadly, this work suggests c-axis confinement as a method to influence layer stacking in other 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Deterministic fabrication of graphene hexagonal boron nitride moiré superlattices

The electronic properties of moiré heterostructures depend sensitively on the relative orientation between layers of the stack. For example, near-magic-angle twisted bilayer graphene (TBG) commonly shows superconductivity, yet a TBG sample with one of the graphene layers rotationally aligned to a hexagonal Boron Nitride (hBN) cladding layer provided experimental observation of orbital ferromagnetism. To create samples with aligned graphene/hBN, researchers often align edges of exfoliated flakes that appear straight in optical micrographs. However, graphene or hBN can cleave along either zig-zag or armchair lattice directions, introducing a 30° ambiguity in the relative orientation of two flakes. By characterizing the crystal lattice orientation of exfoliated flakes prior to stacking using Raman and second-harmonic generation for graphene and hBN, respectively, we unambiguously align monolayer graphene to hBN at a near-0°, not 30°, relative twist angle. We confirm this alignment by torsional force microscopy of the graphene/hBN moiré on an open-face stack, and then by cryogenic transport measurements, after full encapsulation with a second, nonaligned hBN layer. This work demonstrates a key step toward systematically exploring the effects of the relative twist angle between dissimilar materials within moiré heterostructures.

boron nitride↗

Correlating electronic properties with M-site composition in solid solution Ti y Nb 2- y CT x MXenes

High electrical conductivity is desired in MXene films for applications such as electromagnetic interference shielding, antennas, and electrodes for electrochemical energy storage and conversion applications. Due to the acid etching-based synthesis method, it is challenging to deconvolute the relative importance that factors such as chemical composition and flake size contribute to resistivity. To understand the intrinsic and extrinsic contributions to the macroscopic electronic transport properties, a systematic study controlling compositional and structural parameters was conducted with eight solid solutions in the Ti y Nb 2-y CT x system. Here, in particular, we investigated the different roles played by metal (M)-site composition, flake size, and d-spacing on macroscopic transport. Hard x-ray photoemission spectroscopy and spectroscopic ellipsometry revealed changes to electronic structure induced by the M-site alloying. Consistent with the spectroscopic results, the low- and room-temperature conductivities and effective carrier mobility are correlated with the Ti content, while the impact of flake size and d-spacing is most prominent in low-temperature transport. The results provide guidance for designing and engineering MXenes with a wide range of conductivities.

36 MATERIALS SCIENCE↗

Transient absorption measurements of excitonic dynamics in 3 R -MoS 2

The excitonic dynamics in MoS 2 monolayer, bilayer, and bulk flakes with different stacking orders, namely 3R and 2H, are investigated through transient absorption spectroscopy at room temperature. Samples are obtained by the mechanical exfoliation of bulk MoS 2 crystals with 3R and 2H stacking orders. Photoluminescence spectroscopy is performed to characterize and compare the samples. Time-resolved differential reflection measurements reveal that monolayer flakes exfoliated from the 3R and 2H crystals exhibit similar exciton lifetimes of a few picoseconds. However, the exciton lifetime in the 3R bilayer flake is approximately 85 ps, about twice as long as that in the 2H bilayer. This prolonged exciton lifetime is attributed to the reduction of the electron-hole wavefunction overlap in the 3R bilayer due to the built-in polarization. Similarly, in bulk 3R MoS 2 , the exciton lifetime is around 220 ps, approximately twice as long as those in bulk 2H MoS 2 . The extension of the exciton lifetime in 3R transition metal dichalcogenides could be advantageous for their applications in optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spatially-resolved measurements of spin valley polarization in MOCVD-grown monolayer WSe 2

Time-resolved Kerr rotation microscopy is used to generate and measure spin valley polarization in MOCVD-grown monolayer tungsten diselenide (WSe 2 ). The Kerr signal reveals bi-exponential decay with time constants of 100 ps and 3 ns. Measurements are performed on several triangular flakes from the same growth cycle and reveal larger spin valley polarization near the edges of the flakes. This spatial dependence is observed across multiple WSe 2 flakes in the Kerr rotation measurements but not in the spatially resolved reflectivity or microphotoluminescence data. Time-resolved pump-probe overlap measurements further reveal that the Kerr signal’s spatial dependence is not due to spin diffusion on the nanosecond timescale.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Proton irradiation-induced blistering in UO2

Abstract Proton (H + ) irradiation effects in polycrystalline UO 2 have been studied. The irradiation was carried out using three ion energies and two different ion fluxes at 600 °C. Scanning electron microscopy (SEM) investigations showed that significant surface flaking took place. Focused ion beam (FIB) milling in SEM was successfully applied for extracting lamellas from uneven blistered surfaces for transmission electron microscopy (TEM) investigations allowing detailed investigations for the degradation mechanisms. High-resolution TEM for the flaked UO 2 surfaces revealed that the implanted H + formed sharp two-dimensional cavities at the peak ion-stopping region instead of diffusing to the matrix. The resulting lateral stress likely caused UO 2 surface deterioration in good agreement with previous blistering and flaking studies on crystalline materials. Graphical abstract

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

A Novel Sustainable Process for Multilayer Graphene Synthesis Using CO 2 from Ambient Air

Graphene produced by different methods can present varying physicochemical properties and quality, resulting in a wide range of applications. The implementation of a novel method to synthesize graphene requires characterizations to determine the relevant physicochemical and functional properties for its tailored application. We present a novel method for multilayer graphene synthesis using atmospheric carbon dioxide with characterization. Synthesis begins with carbon dioxide sequestered from air by monoethanolamine dissolution and released into an enclosed vessel. Magnesium is ignited in the presence of the concentrated carbon dioxide, resulting in the formation of graphene flakes. These flakes are separated and enhanced by washing with hydrochloric acid and exfoliation by ammonium sulfate, which is then cycled through a tumble blender and filtrated. Raman spectroscopic characterization, FTIR spectroscopic characterization, XPS spectroscopic characterization, SEM imaging, and TEM imaging indicated that the graphene has fifteen layers with some remnant oxygen-possessing and nitrogen-possessing functional groups. The multilayer graphene flake possessed particle sizes ranging from 2 µm to 80 µm in diameter. BET analysis measured the surface area of the multilayer graphene particles as 330 m 2 /g, and the pore size distribution indicated about 51% of the pores as having diameters from 0.8 nm to 5 nm. This study demonstrates a novel and scalable method to synthesize multilayer graphene using CO 2 from ambient air at 1 g/kWh electricity, potentially allowing for multilayer graphene production by the ton. The approach creates opportunities to synthesize multilayer graphene particles with defined properties through a careful control of the synthesis parameters for tailored applications.

36 MATERIALS SCIENCE↗

Compressed Expanded Natural Graphite (CENG) Processing for PCM Composites

The use of phase change materials (PCMs) in thermal energy storage applications has received considerable attention in recent decades. Organic PCMs are popular due to their high latent heat of fusion, noncorrosive properties, and relative stability over many charge and discharge cycles. A primary limitation of these materials is their low thermal conductivity. This has led researchers to develop various methods to increase thermal conductivity by seeding PCM with or impregnating them into more conductive materials. One method is to impregnate PCMs into compressed expanded natural graphite (CENG) matrices, which can improve thermal conductivity by a factor of 100. CENG matrices have received particular interest due to their low cost, high porosity, small (nano/micro) pore size, high pore density, high thermal conductivity, and ability to be compressed into many geometries. PCM/CENG matrix composites have been extensively studied; however, the effect that CENG processing has on PCM saturation and the overall matrix thermal conductivity has not been well investigated. This processing includes four major steps including graphite intercalation, thermal shock, compression, and PCM saturation. Intercalation involves soaking graphite flakes in sulfuric and/or nitric acid to intercalate the acids between the graphene layers. The graphite flakes are then subjected to a high-temperature thermal shock, during which the intercalated acid is gasified rapidly, pushing the graphene layers apart, resulting in accordion-shaped graphite "worms". The "worms" are then compacted to a desired bulk density and then soaked with molten PCM until fully saturated. The properties of the produced CENG matrix, and its ability to allow PCM permeation, are sensitive to the processing parameters, namely, the thermal shock temperature and exposure time, as well as the matrix apparent density or porosity. Here, we study the effect of the thermal shock conditions necessary to expand intercalated graphite flakes on PCM saturation and the expanded graphite's thermal conductivity and morphology. We found that the thermal shock temperature exhibits the greatest influence. At greater shock temperatures, SEM images showed that expanded graphite worms exhibited greater density of pores, thus increasing total surface area within the matrices. Increasing thermal shock temperature yielded greater overall PCM saturation, as well as an increased rate of saturation. Improvements in PCM saturation rate and overall saturation are obtained as the shock temperature is increased. Longer exposure to thermal shock also improves initial saturation rates and is beneficial if a shortened impregnation time is needed. Thermal shock conditions did not impact thermal conductivity; however, conductivity was largely affected by matrix porosity. A local maximum in axial thermal conductivity was observed at around 83% porosity, which is similar to that observed in previous studies.

compressed expanded natural graphite↗

Near net shape bulk laminated silicon iron electric steel for improved electrical resistance and low high frequency loss

The invention involves producing discontinuous, flake-shaped particles of a soft magnetic material, coating the flake-shaped particles with an electrically insulating coating, and consolidating the coated flaked-shaped particles to form a soft magnetic bulk shape. The consolidated bulk shape can comprise a layer or a simple or complex 3D magnet part shape, which has a consolidated layered microstructure that includes laminated soft magnetic regions that are substantially encapsulated by an electrical insulating layer to increase the resistivity of soft magnetic material, especially when used in silicon iron magnet parts.

Cui, Jun↗

Trace Chemical Detection Using Intercalated MXenes as a Signal Enhancing Substrate in Optical Probes

MXenes are 2D materials composed of layered transition metal nitrides or carbides. These materials are synthesized by HF exfoliation from MAX phases (Ti{sub 3}AlC{sub 2}). The 2D nanomaterial was synthesized by the removal of the 'A' element, resulting in a Mxene product (Ti{sub 3}C{sub 2}). MXenes have the general formula M{sub n+1}X{sub n}T{sub x}, where M is an early transition metal, X is Carbon and/or Nitrogen, and T accounts for surface terminated functional groups such as Fluoride, hydroxyl, and oxygen. These materials have very unique properties, similar to graphene, that allows them to be applied in a variety of trace detection techniques including surface-enhanced Raman spectroscopy (SERS). MXenes have also been demonstrated to selectively uptake uranyl ion, UO{sub 2}{sup 2+}. If this property can be combined with SERS or fluorescence detection, it may be possible to use MXenes as the basis for an alternative method to kinetic phosphorescence analysis (KPA) for trace uranyl measurements. Objectives: To confirm that MXene Nano materials are suitable substrates for SERS and sensor development by enhancing Raman signaling. To determine if certain MXene preparation methods yield materials that are more suitable for trace sensing methods. To determine uranyl uptake properties of these MXene materials and test them for analytical signals. Sample Preparation: Preparation of Ti{sub 3}C{sub 2}MXene (at FSU). MXenes were prepared by etching Al from Ti{sub 3}AlC{sub 2} (MAX phase)material. Two etching techniques yield different MXene products: LiF/HCl: Milder reaction, larger MXene flakes. HF: Harsher reaction, smaller flakes, larger layer separation. Products washed to remove etchant, vacuum filtered, and dried. Dried MXene flakes are air-stable. Film preparation for sensor testing (at SRNL): Suspend powder in diH{sub 2}O, purge with Ar, sonicate for 30 min. Centrifuge and collect supernate with suspended particles. Observed LiF-etched Mxene yielded a higher density of particles and darker collected solution. Drop-cast (4 ml) supernate onto slides and dried with Ar. For Rhodamine B (RhB) testing, drop-cast 4 ml drops onto Mxene spots and dried with Ar. Scanning Electron Microscopy conditions: 10 kV Beam energy, high vacuum; Working distance of 8 mm; beam penetration depth appx. 4 microns, beam spot size appx. 2 nanometers. Results: Detection of aluminum correlates with bright spots on image. Presence of aluminum shows that LiF/HCl etching was less thorough than HF etching. Trace Cl detection in LiF images suggests incomplete rinsing. HF has smaller feature size, more layer structure, and increased homogeneity, consistent with expectations. Macroscopic Raman spectroscopy measurements: 532 nm excitation, ∼50 mW with a ∼100 micron spot size (InPhotonics RPB probe). Kaiser Optical Holospec f/1.8 spectrometer with cooled (-60 deg.C) Andor iDus OE420 CCD. LiF 1x supernate showed good signal for trace measurements of Rhodamine B. HF and 1/4x LiF supernates showed little Mxene or Rhodamine B signal. Low deposition densities led to excess background signal from glass slides. For LiF film, response is linear with Rhodamine B concentration over range tested. Will retest with Raman microscope (∼1 micron spot size) to characterize SERS of more dilute LiF and HF etched Mxenes. Conclusions: The LiF etched material was more suitable for macroscopic SERS measurements because it was more concentrated, resulting in a thicker film than the HF etched Mxene and diluted LiF sample. However, the other materials may give greater SERS enhancements, which we hope to determine from measurements with the Raman microscope. From characterization with SEM we concluded that the HF etched Mxene is more uniform/homogenous and has smaller particle size than the LiF etched Mxene. There is still aluminum present in both samples indicating that etching wasn't complete, but the removal of the aluminum was more efficient in the HF method. Path Forward: Observe SERS with Raman microscopy, to obtain better signals for the more diluted samples and be able to compare enhancement effects for the different MXenes. Characterize uranyl sorption into MXene films and test Raman and fluorescence signals. Revisit the etching conditions to improve removal of aluminum. FSU and SRNL will continue to collaborate to create and characterize different Mxene materials and test their usefulness for sensor applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Anisotropic Properties of Quasi‐1D In 4 Se 3 : Mechanical Exfoliation, Electronic Transport, and Polarization‐Dependent Photoresponse

Abstract Theoretical and experimental investigations of various exfoliated samples taken from layered In 4 Se 3 crystals are performed. In spite of the ionic character of interlayer interactions in In 4 Se 3 and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few‐nanometer‐thick flakes of In 4 Se 3 by mechanical exfoliation of its bulk crystals. The In 4 Se 3 flakes exfoliated on Si/SiO 2 have anisotropic electronic properties and exhibit field‐effect electron mobilities of about 50 cm 2 V −1 s −1 at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS 2 and TiS 3 . In 4 Se 3 devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry‐dependent band structure calculations for the most expected ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In 4 Se 3 crystals is possible, while the fast anisotropic photoresponse makes In 4 Se 3 a competitive electronic material, in the TMC family, for emerging optoelectronic device applications.

Vorobeva, Nataliia S.↗

Nanoscale Editing of Multi and Single Layer Tungsten Disulfide via Gas‐Assisted Focused Electron Beam Induced Etching for Device Prototyping

Focused electron beam induced etching (FEBIE) with XeF 2 (xenon difluoride) precursor is conducted on multi-layer exfoliated WS 2 (tungsten disulfide) and monolayer WS 2 grown by chemical vapor deposition (CVD). The films are characterized by atomic force microscopy (AFM) and Raman and photoluminescence (PL) spectroscopy post-etching. The etch rates/efficiencies are reported as a function of electron beam energy, current, dwell time, and XeF 2 pressure. Bulk film Raman spectra are unchanged post-FEBIE, indicating minimal subsurface damage. Monolayer WS 2 shows a decrease in Raman and PL intensity post-FEBIE, with a dose-to-clear of ≈2 nC µm −2 . The study reveals regimes affected by the various mass transport contributions such as refresh time and the ratio of electrons/XeF 2 . Spontaneous etching was discovered during FEBIE of large patterned areas due to the long frame/refresh times. Density functional theory and ab initio molecular dynamics simulations compares desorption of SF x and WF x molecules from pristine WS 2 basal planes and pore edges, revealing the spontaneous etching is consistent with etching of partially etched monolayers during each frame. Single-line etching width of 21 nm, and patterning flakes into 100 nm wide channels are demonstrated. In conclusion, this work demonstrates the possibility of editing WS 2 flakes into electronic devices of arbitrary dimensions for semiconductor applications.

2D materials↗

Scalable Synthesis of 2D Mo 2 C and Thickness‐Dependent Hydrogen Evolution on Its Basal Plane and Edges

Abstract 2D transition metal carbides (2D TMCs and MXenes) are promising candidates for applications of energy storage and catalysis. However, producing high‐quality, large 2D flakes of Mo2C MXene has been challenging. Here, a new salt‐assisted templating approach is reported that enables the direct synthesis of 2D Mo 2 C with low defect concentrations. KCl acts as a template to form an intermediate 2D product, facilitating Mo 2 C formation without coarsening upon melting. The thickness of the flakes produced can range from monolayer (0.36 nm) to 10 layers (4.55 nm), and the electrocatalytical hydrogen evolution reaction (HER) activity of 2D Mo 2 C is inversely proportional to its thickness. The monolayer Mo 2 C shows remarkable HER performance with a current density of ≈6800 mA cm − 2 at 470 mV versus reversible hydrogen electrode and an ultrahigh turnover frequency of ≈17 500 s − 1 . This salt‐assisted synthesis approach can also produce WC and V 8 C 7 nanosheets, expanding the family of 2D carbides. The new pathway eliminates the need for layered ceramic precursors, making it a versatile approach to direct synthesis of MXene‐like 2D carbides.

Chemistry↗