SEARCH · Search NASA

Results for “frequency triplers”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

51 records · Page 3

All sources NASA NTRS DOE OSTI

NASA NTRS1994

Integrated Back-to-Back Barrier-N-N + Varactor Diode Tripler Using a Split-waveguide Block

The back-to-back barrier-N-N + (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance and suitability to planarization make it ideal choice for high frequency, low power, odd harmonic generation. In this paper, development of an integrated planar multiplier device and its performance as a 220 GHz tripler is presented. A new split-waveguide block design has been used to provide the proper embedding impedances to the device. The performance over 200-240 GHz has been measured and the integrated bbBNN device is shown to provide as much as 734 microwatts output power. A flange-to-flange tripling efficiency of 7% has been obtained. This is believed to be the highest conversion efficiency yet reported for all planar tripler at this frequency. The performance is expected to be improved further with minor changes to the device and circuit parameters.

interstellar↗

NASA NTRS2001

A 1.2 THz Planar Tripler Using GaAs Membrane Based Chips

Fabrication technology for submillimeter-wave monolithic circuits has made tremendous progress in recent years and it is now possible to fabricate sub-micron GaAs Schottky devices on a number of substrate types, such as membranes, frame-less membranes or substrateless circuits. These new technologies allow designers to implement very high frequency circuits, either Schottky mixers or multipliers, in a radically new manner. This paper will address the design, fabrication, and preliminary results of a 1.2 THz planar tripler fabricated on a GaAs frame-less membrane, the concept of which was described previously. The tripler uses a diode pair in an antiparallel configuration similar to designs used at lower frequency. To date, this tripler has produced a peak output power of 80 microW with 0.9% efficiency at room temperature (at 1126 GHz). The measured fix-tuned 3 dB bandwidth is about 3.5%. When cooled, the output power reached a peak of 195 microW at 120 K and 250 microW at 50 K. The ease with which this circuit was implemented along with the superb achieved performance indicates that properly designed planar devices such as this tripler can now usher in a new era of practical very high frequency multipliers.

Bruston, J.↗

NASA NTRS1995

Integrated back to back barrier-N-N(+) varactor diode tripler using a split-waveguide block

The back-to-back barrier-N-N(+) (bbBNN) varactor is a nonlinear device being developed for frequency multiplier applications above 100 GHz. Its symmetrical C-V characteristic, low series resistance, freedom from external bias and suitability to planarization make it an ideal choice for high frequency, low power, odd harmonic generation. In this paper, the performance of a 220-GHz waveguide tripler using, for the first time, a planar GaAs bbBNN device integrated on a quartz microstrip circuit is presented. A new split-waveguide block design has been employed to provide the proper embedding impedances to the device at the input and third harmonic output frequencies. A flange-to-flange tripling efficiency of 7% has been obtained at 220 GHz with an output power in excess of 700 mu W. This is believed to be the highest conversion efficiency yet reported for a tripler with an integrated device at this frequency. Theoretical calculations indicate that substantial improvement is possible with modest changes to the device and circuit parameters.

QUARTZ MICROSTRIP CIRCUITS↗

NASA NTRS1992

A submillimeter tripler using a quasi-waveguide structure

A new type of frequency multiplier structure is being developed which is suitable for application at frequencies above 1 THz. This structure preserves some of the properties of waveguide for mode control, yet is not truly single mode. The device resembles a sectoral horn, with a varactor diode mounted near the throat. Input and output coupling are through the same aperture, requiring a quasi-optical diplexer. Initial tests are directed at building a tripler at 500 GHz, for comparison with waveguide structures. The diplexer is a blazed diffraction grating with appropriate focusing optics. Model studies show that the impedance match to a varactor should be good, and initial tests of the beam patterns of the prototype indicate that optical coupling efficiency should be very high. The structure also has the potential for use as a fundamental mixer, or as a third harmonic mixer.

Erickson, Neal R.↗

NASA NTRS1992

Monolithic millimeter-wave diode grid frequency multiplier arrays

Monolithic diode frequency multiplier arrays, including barrier-N-N(+) (BNN) doubler, multi-quantum-barrier-varactor (MQBV) tripler, Schottky-quantum-barrier-varactor (SQBV) tripler, and resonant-tunneling-diode (RTD) tripler arrays, have been successfully fabricated with yields between 85 and 99 percent. Frequency doubling and/or tripling have been observed for all the arrays. Output powers of 2.4-2.6 W (eta = 10-18 percent) at 66 GHz with the BNN doubler and 3.8-10 W (eta = 1.7-4 percent) at 99 GHz with the SQBV tripler have been achieved.

Liu, Hong-Xia L.↗

NASA NTRS1994

Single-Barrier-Varactor 200-GHz Tripler

Single-barrier varactor in crossed waveguide serves as experimental frequency-tripling device with output at frequencies ranging from 186 to 207 GHz. Varactor has symmetrical capacitance-vs.-voltage characteristic and antisymmetrical dc current-vs.-voltage characteristic. As result, generates only odd-harmonic currents when radio-frequency voltage applied at zero dc bias.

Choudhury, Debabani↗

NASA NTRS1994

A Tripler to 220 GHz Using a Back-to-Back Barrier-N-N+ Varactor Diode

frequency multiplier↗

NASA NTRS1988

Watt-level millimeter-wave monolithic diode-grid frequency multipliers

Wall-level CW solid-state sources in the millimeter-wave region are needed for plasma diagnostics. Monolithic metal-grid arrays containing in excess of 1000 Schottky diodes have produced watt-level output at 66 GHz in a doubler configuration, in excellent agreement with the large-signal predictions of the frequency multiplication. Current efforts are concentrated on fabricating and developing arrays of a novel barrier-intrinsic-N+ (BIN) diode which promise increased performance in a tripler configuration. Initial tests will be made for a configuration where a tripling efficiency of 35 percent at an output frequency of 100 GHz is predicted. Eventual goals are monolithic BIN diode grids operating at 1 THz.

Hwu, J. R.↗

NASA NTRS2010

Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.

Lin, Robert H.↗

NASA NTRS2011

A 2.5-2.7 THz Room Temperature Electronic Source

We report on a room temperature 2.5 to 2.7 THz electronic source based on frequency multipliers. The source utilizes a cascade of three frequency multipliers with W-band power amplifiers driving the first stage multiplier. Multiple-chip multipliers are utilized for the two initial stages to improve the power handling capability and a sub-micron anode is utilized for the final stage tripler. Room temperature measurements indicate that the source can put out a peak power of about 14 microwatts with more than 4 microwatts in the 2.5 to 2.7 THz range.

Varactor diodes↗

NASA NTRS1994

A Tripler to 220 GHz Using a Back-To-Back Barrier-N-N(sup +) Varactor Diode

Explore the source record for details and available documents.

odd harmonic generation high frequency split-waveg↗

NASA NTRS1987

Space-qualified submillimeter radiometer

The purpose of this research was to develop a reliable submillimeter wave spectrometer for space-borne high frequency spectral line work. The emphasis was on improving the efficiency of frequency multipliers to limit the system components to rugged, low power consumption solid-state devices. This research has allowed Millitech to develop increased efficiency and performance in Millitech's existing line of submillimeter components and systems. Millitech has fabricated and tested a complete solid-state spectrometer front end for use at 560 GHz (the 1(sub 10) to 1(sub 01) transition of water vapor). The spectrometer was designed with the rigors of flight conditions in mind. The spectrometer uses a phase-locked, solid-state Gunn diode oscillator as the local oscillator, employing a tripler to produce about 3 mW of power at 285 GHz, and a low noise second harmonic waveguide mixer which requires less than 2 mW of LO power. The LO (and the signal) is injected into the mixer by means of a quasioptical diplexer. The measured system noise temperature is 2800 K (DSB) over 400 MHz. The whole spectrometer front end is compact (21 cm by 21 cm by 24 cm), light (7.4 kg), and has a power consumption of less than 8 W. Other topics explored in this work include compact frequency agile phase lock loops, optical filters, and InP Gunn oscillators for low noise applications. As a result of this research, the improvement in the design of multipliers and harmonic mixers will allow their use as the LO power for a variety of satellite-borne receivers operating in the 200 to 600 GHz frequency range.

Huguenin, G. R.↗

NASA NTRS2011

Improvements in Speed and Functionality of a 670-GHz Imaging Radar

Significant improvements have been made in the instrument originally described in a prior NASA Tech Briefs article: Improved Speed and Functionality of a 580-GHz Imaging Radar (NPO-45156), Vol. 34, No. 7 (July 2010), p. 51. First, the wideband YIG oscillator has been replaced with a JPL-designed and built phase-locked, low-noise chirp source. Second, further refinements to the data acquisition and signal processing software have been performed by moving critical code sections to C code, and compiling those sections to Windows DLLs, which are then invoked from the main LabVIEW executive. This system is an active, single-pixel scanned imager operating at 670 GHz. The actual chirp signals for the RF and LO chains were generated by a pair of MITEQ 2.5 3.3 GHz chirp sources. Agilent benchtop synthesizers operating at fixed frequencies around 13 GHz were then used to up-convert the chirp sources to 15.5 16.3 GHz. The resulting signals were then multiplied 36 times by a combination of off-the-shelf millimeter- wave components, and JPL-built 200- GHz doublers and 300- and 600-GHz triplers. The power required to drive the submillimeter-wave multipliers was provided by JPL-built W-band amplifiers. The receive and transmit signal paths were combined using a thin, high-resistivity silicon wafer as a beam splitter. While the results at present are encouraging, the system still lacks sufficient speed to be usable for practical applications in a contraband detection. Ideally, an image acquisition speed of ten seconds, or a factor of 30 improvement, is desired. However, the system improvements to date have resulted in a factor of five increase in signal acquisition speed, as well as enhanced signal processing algorithms, permitting clearer imaging of contraband objects hidden underneath clothing. In particular, advances in three distinct areas have enabled these performance enhancements: base source phase noise reduction, chirp rate, and signal processing. Additionally, a second pixel was added, automatically reducing the imaging time by a factor of two. Although adding a second pixel to the system doubles the amount of submillimeter components required, some savings in microwave hardware can be realized by using a common low-noise source.

Dengler, Robert J.↗

NASA NTRS1991

A wide-band monolithic quasi-optical power meter for millimeter- and submillimeter-wave applications

A novel monolithic power meter has been developed for submillimeter-wave applications (100 GHz to 10 THz). The detector is a large-area bismuth bolometer integrated on a 1.2-micron-thick dielectric membrane. This approach results in a wide-band, high-responsivity detector. The power meter is simple to fabricate, is inexpensive, and can be easily calibrated using a low-frequency network. Quasi-optical measurements at 90, 140, and 240 GHz show that the bolometer is polarization-independent and could be modeled by a simple transmission line model. Absolute power measurements at 90, 140, and 240 GHz show a + or - 5 percent accuracy and agree well with a calibrated Anritsu power meter at 90 GHz. Potential application areas are power calibration, antenna coupling efficiency measurements, and absolute power measurements from solid-state devices and far-infrared lasers at submillimeter wavelengths. Absolute output power measurements on a 220-280 GHz tripler using the quasi-optical power meter are presented as an application example.

Ling, Curtis C.↗

NASA NTRS2001

Design and Performance of a 2.7 THz Waveguide Tripler

The design and performance of a 0.9 THz to 2.7 THz waveguide tripler are presented. An unusual split block configuration with parallel input and output waveguides accommodates a monolithic membrane diode (MoMeD) circuit. Submicron planar GaAs Schottky diodes in single and antiparallel pairs are implemented with matching filters on a 3-micrometer thick suspended substrate as part of the MoMeD structure. The filters are a combination of short hammerheads and high-low impedance elements. Only a few circuit variations have been measured to date. The best current performance shows an output power of 0.1 microW and an efficiency of 0.002% at the band center frequency of 2.55 THz.

Maiwald, Frank↗