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Results for “gate-tunability”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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47 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Correlated nanoelectronics and the second quantum revolution

The growing field of correlated nanoelectronics exists at the intersection of two established fields: correlated oxide electronics and semiconductor nanoelectronics. The development of quantum technologies that exploit quantum coherence and entanglement for the purposes of computation, simulation, and sensing will require complex material properties to be controlled at nanoscale dimensions. Heterostructures and nanostructures formed at the interface between LaAlO 3 and SrTiO 3 exhibit striking behavior that arises from the ability to program the conductive behavior at extreme nanoscale dimensions. The active electronic layer, SrTiO 3 , exhibits a wide range of gate-tunable phenomena such as ferroelectricity, ferroelasticity, magnetism, superconductivity, and spin–orbit coupling, all of which can be controlled at the nanoscale using two reversible methods: conductive atomic force microscope lithography and ultra-low-voltage electron beam lithography. Mesoscopic devices such as single-electron transistors and quasi-one-dimensional electron waveguides can be “sketched” using these techniques, and the properties of these devices differ significantly from those created from traditional semiconductors, such as Si or GaAs. The strongly correlated nature of the SrTiO 3 system is evident from superconducting behavior as well as a state in which electrons are paired outside the superconducting state. A highly exotic phase was discovered in which a degenerate quantum liquid is formed from bound states of n = 2, 3, 4, … electrons. Further development of correlated nanoelectronics based on the LaAlO 3 /SrTiO 3 system can potentially lead to a general platform for quantum simulation as well as a pathway for the development of highly entangled states of multiple photons.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of surface adsorption on MoS 2 memtransistor switching kinetics

Sulfur-deficient polycrystalline two-dimensional (2D) molybdenum disulfide (MoS 2 ) memtransistors exhibit gate-tunable memristive switching to implement emerging memory operations and neuromorphic computing paradigms. Grain boundaries and sulfur vacancies are critical for memristive switching; however, the underlying physical mechanisms are not fully understood. Furthermore, the adsorption of water and gaseous species strongly perturbs electronic transport in monolayer MoS 2 , and little work has been done to explore the influence of surface interactions on defect-related kinetics that produces memristive switching. Here, we study the switching kinetics of back-gated MoS 2 memtransistors using current transient measurements in a controlled atmosphere chamber. Here, we observe that adsorbed water molecules lead to suppression of the electronic trap-filling processes concomitant with the resistive switching process, resulting in altered kinetics of the resistive switching. Additionally, using the transient response from “bunched” drain voltage pulse trains performed as a function of temperature, we extract the energy of the affected trap state and find that it places the trap roughly midgap [E T = E C – 0.7 (±0.4) eV]. Our results highlight the importance of controlling for surface interactions that may affect switching kinetics in 2D memtransistors, synaptic transistors, and related memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Observation of half-integer Shapiro steps in graphene Josephson junctions

We study quantum transport and AC Josephson effect of hexagonal boron nitride encapsulated graphene (BGB) Josephson junctions (JJs). Our experiments reveal the emergence of the half-integer Shapiro steps in the n-type regime with high electron carrier densities. We attribute this observation to the gate-tunable transmission probability of the graphene junction. Furthermore, our numerical simulations are consistent with the appearance of half-integer Shapiro steps at high transparency, which suggests a skewed current phase relationship in the graphene JJ.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Moiréless correlations in ABCA graphene

Atomically thin van der Waals materials stacked with an interlayer twist have proven to be an excellent platform toward achieving gate-tunable correlated phenomena linked to the formation of flat electronic bands. In this work we demonstrate the formation of emergent correlated phases in multilayer rhombohedral graphene––a simple material that also exhibits a flat electronic band edge but without the need of having a moiré superlattice induced by twisted van der Waals layers. We show that two layers of bilayer graphene that are twisted by an arbitrary tiny angle host large (micrometer-scale) regions of uniform rhombohedral four-layer (ABCA) graphene that can be independently studied. Scanning tunneling spectroscopy reveals that ABCA graphene hosts an unprecedentedly sharp van Hove singularity of 3–5-meV half-width. We demonstrate that when this van Hove singularity straddles the Fermi level, a correlated many-body gap emerges with peak-to-peak value of 9.5 meV at charge neutrality. Mean-field theoretical calculations for model with short-ranged interactions indicate that two primary candidates for the appearance of this broken symmetry state are a charge-transfer excitonic insulator and a ferrimagnet. Finally, we show that ABCA graphene hosts surface topological helical edge states at natural interfaces with ABAB graphene which can be turned on and off with gate voltage, implying that small-angle twisted double-bilayer graphene is an ideal programmable topological quantum material.

42 ENGINEERING↗
DOE OSTI2026

Space-Charge-Limited van der Waals Spin Transistor

Integrating semiconducting and magnetic materials could combine transistorlike operation with nonvolatility and enable architectures such as logic in memory. Here, in this work, we employ correlated electrical transport and scanning nitrogen-vacancy center magnetic imaging to elucidate a spin transistor concept that amalgamates vertical and lateral hopping transport inside a 2D antiferromagnetic semiconductor, mechanistically distinct from vertical tunneling devices. Our device, based on a monolayer-bilayer junction in CrSBr, displays giant, gate-tunable magnetoresistance driven by the dual action of electrostatic doping on space-charge-limited lateral conduction and interlayer exchange coupling. Moreover, we visualize a field-trainable, layer-sharing effect that selects between coherent or domain-wall reversal at the spin-flip transition, enabling multilevel, memristive conductance states. Our layer-dependent space charge mechanism for convergent electrical and magnetic control opens opportunities to address limitations in contemporary computing.

2-dimensional systems↗
DOE OSTI2020

Tip- and Plasmon-Enhanced Infrared Nanoscopy for Ultrasensitive Molecular Characterizations

Herein, we propose a method for ultrasensitive infrared (IR) vibrational spectroscopy of molecules with nanoscale footprints by combining the tip enhancement of a scattering-type scanning near-field optical microscope (s-SNOM) and the plasmon enhancement of breathing-mode (BM) plasmon resonances of graphene nanodisks (GNDs). To demonstrate this, we develop a quantitative model that is capable of computing accurately the s-SNOM signals of nanoscale samples. With our modeling, we show that the s-SNOM tip can effectively excite gate-tunable BM plasmonic resonances in GNDs with strong field enhancement and sensitive dependence on the size of GND. Moreover, we demonstrate that the intense electric field of tip-excited plasmonic BMs can strongly enhance the IR vibrational modes of molecules. As a result, IR vibrational signatures of individual molecular particles with sizes down to 1–2 nm are readily observable by s-SNOM. Our study sheds light on future ultrasensitive IR biosensing that takes advantage of both the tip and plasmon enhancement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Gate-defined wires in twisted bilayer graphene: From electrical detection of intervalley coherence to internally engineered Majorana modes

Twisted bilayer graphene (TBG) realizes a highly tunable, strongly interacting system featuring superconductivity and various correlated insulating states. We establish gate-defined wires in TBG with proximity-induced spin-orbit coupling as (i) a tool for revealing the nature of correlated insulators and (ii) a platform for Majorana-based topological qubits. We show that the band structure of a gate-defined wire immersed in an intervalley coherent correlated insulator inherits electrically detectable fingerprints of symmetry breaking native to the latter. Surrounding the wire by a superconducting TBG region on one side and an intervalley coherent correlated insulator on the other further enables the formation of Majorana zero modes—possibly even at zero magnetic field depending on the precise symmetry-breaking order present. Our proposal not only introduces a highly gate-tunable topological qubit medium relying on internally generated proximity effects but can also shed light on the Cooper-pairing mechanism in TBG.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Emergence of Topologically Nontrivial Spin-Polarized States in a Segmented Linear Chain

The synthesis of new materials with novel or useful properties is one of the most important drivers in the fields of condensed matter physics and materials science. Discoveries of this kind are especially significant when they point to promising future basic research and applications. Van der Waals bonded materials comprised of lower-dimensional building blocks have been shown to exhibit emergent properties when isolated in an atomically thin form. Here, we report the discovery of a transition metal chalcogenide in a heretofore unknown segmented linear chain form, where basic building blocks each consisting of two hafnium atoms and nine tellurium atoms (Hf 2 Te 9 ) are van der Waals bonded end-to-end. First-principle calculations based on density functional theory reveal striking crystal-symmetry-related features in the electronic structure of the segmented chain, including giant spin splitting and nontrivial topological phases of selected energy band states. In this work, atomic-resolution scanning transmission electron microscopy reveals single segmented Hf 2 Te 9 chains isolated within the hollow cores of carbon nanotubes, with a structure consistent with theoretical predictions. Van der Waals-bonded segmented linear chain transition metal chalcogenide materials could open up new opportunities in low-dimensional, gate-tunable, magnetic and topological crystalline systems.

36 MATERIALS SCIENCE↗
DOE OSTI2022

SWAP Gate between a Majorana Qubit and a Parity-Protected Superconducting Qubit

High fidelity quantum information processing requires a combination of fast gates and long-lived quantum memories. Here, in this Letter, we propose a hybrid architecture, where a parity-protected superconducting qubit is directly coupled to a Majorana qubit, which plays the role of a quantum memory. The superconducting qubit is based upon a π-periodic Josephson junction realized with gate-tunable semiconducting wires, where the tunneling of individual Cooper pairs is suppressed. One of the wires additionally contains four Majorana zero modes that define a qubit. We demonstrate that this enables the implementation of a SWAP gate, allowing for the transduction of quantum information between the topological and conventional qubit. This architecture combines fast gates, which can be realized with the superconducting qubit, with a topologically protected Majorana memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Probing coherence in nanoscale energy transport with high spatial-temporal resolution. Final Technical Report for DOE Award Number DE-SC0019244

The overarching goal of this project is to understand how the phase coherence of phonons and the interaction of phonons with other microscopic degrees of freedom in nanomaterials, such as 2D materials, can affect the energy transport properties and eventually lead to control of energy transport by manipulating phonon interference and phonon scatterings. On the computational side, we are developing and applying first-principles methods to study emerging phonon properties in nanomaterials, including coherent phonons, resonant bonding and gate-tunable phonon-electron scatterings, which hold the promise of enabling significant tunability of energy transport processes with external fields for a wide range of applications. On the experimental side, we are developing ultrafast transient grating spectroscopy and scanning ultrafast electron microscopy (SUEM) to directly probe the coherent phonon transport and phonon-electron interaction processes in nanomaterials with high combined spatial-temporal resolutions. This program will not only provide new insights into the microscopic transport and interaction processes of fundamental energy carriers, but also open new venue towards energy-relevant applications such as thermal switches and coherent energy harvesters.

42 ENGINEERING↗
DOE OSTI2021

Progress and Challenges for Memtransistors in Neuromorphic Circuits and Systems

Due to the increasing importance of artificial intelligence (AI), significant recent effort has been devoted to the development of neuromorphic circuits that seek to emulate the energy-efficient information processing of the brain. While non-volatile memory (NVM) based on resistive switches, phase-change memory, and magnetic tunnel junctions has shown potential for implementing neural networks, additional multi-terminal device concepts are required for more sophisticated bio-realistic functions. Of particular interest are memtransistors based on low-dimensional nanomaterials, which are capable of electrostatically tuning memory and learning behavior at the device level. Herein, a conceptual overview of the memtransistor is provided in the context of neuromorphic circuits. Recent progress is surveyed for memtransistors and related multi-terminal NVM devices including dual-gated floating-gate memories, dual-gated ferroelectric transistors, and dual-gated van der Waals heterojunctions. Further, the different materials systems and device architectures are classified based on the degree of control and relative tunability of synaptic behavior, with an emphasis on device concepts that harness the reduced dimensionality, weak electrostatic screening, and phase-changes properties of nanomaterials. Finally, strategies for achieving wafer-scale integration of memtransistors and multi-terminal NVM devices are delineated, with specific attention given to the materials challenges for practical neuromorphic circuits.

36 MATERIALS SCIENCE↗