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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

A real-time respiration position based passive breath gating equipment for gated radiotherapy: A preclinical evaluation

Purpose: To develop a passive gating system incorporating with the real-time position management (RPM) system for the gated radiotherapy. Methods: Passive breath gating (PBG) equipment, which consists of a breath-hold valve, a controller mechanism, a mouthpiece kit, and a supporting frame, was designed. A commercial real-time positioning management system was implemented to synchronize the target motion and radiation delivery on a linear accelerator with the patient's breathing cycle. The respiratory related target motion was investigated by using the RPM system for correlating the external markers with the internal target motion while using PBG for passively blocking patient's breathing. Six patients were enrolled in the preclinical feasibility and efficiency study of the PBG system. Results: PBG equipment was designed and fabricated. The PBG can be manually triggered or released to block or unblock patient's breathing. A clinical workflow was outlined to integrate the PBG with the RPM system. After implementing the RPM based PBG system, the breath-hold period can be prolonged to 15-25 s and the treatment delivery efficiency for each field can be improved by 200%-400%. The results from the six patients showed that the diaphragm motion caused by respiration was reduced to less than 3 mm and the position of the diaphragm was reproducible for difference gating periods. Conclusions: A RPM based PBG system was developed and implemented. With the new gating system, the patient's breath-hold time can be extended and a significant improvement in the treatment delivery efficiency can also be achieved.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2017

Non-scaling behavior of electroosmotic flow in voltage-gated nanopores

Ionic size effects and electrostatic correlations result in the non-monotonic dependence of the electrical conductivity on the pore size. For ion transport at a high gating voltage, the conductivity oscillates with the pore size due to a significant overlap of the electric double layers.

catalysis (heterogeneous)↗
DOE OSTI2019

The Effect of the Gate-Connected Field Plate on Single-Event Transients in AlGaN/GaN Schottky-Gate HEMTs

A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. Furthermore, for the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2019

Opening Markets, Designing Windows, and Closing Gates: India's Power System Transition - Insights on Gate Closure

This report explores the concept of gate closure, the time at which market participants must submit their final bids and offers for electricity. Gate closure is typically considered a minor feature of market design, but its implementation could be pivotal to how power markets will operate under high penetrations of renewable energy. This report analyzes global experiences with gate closure, and then reviews the unique benefits, challenges, and other considerations that will impact the implementation of gate closure in the Indian electricity market.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗
DOE OSTI2022

Error rate reduction of single-qubit gates via noise-aware decomposition into native gates

In the current era of Noisy Intermediate-Scale Quantum (NISQ) technology, the practical use of quantum computers remains inhibited by our inability to aptly decouple qubits from their environment to mitigate computational errors. In this paper, we introduce an approach by which knowledge of a qubit’s initial quantum state and the standard parameters describing its decoherence can be leveraged to mitigate the noise present during the execution of a single-qubit gate. We benchmark our protocol using cloud-based access to IBM quantum processors. On ibmq_rome, we demonstrate a reduction of the single-qubit error rate by 38%, from $1.6 \times 10 ^{-3}$ to $1.0 \times 10 ^{-3}$ , provided the initial state of the input qubit is known. On ibmq_bogota, we prove that our protocol will never decrease gate fidelity, provided the system’s T 1 and T 2 times have not drifted above 100 times their assumed values. The protocol can be used to reduce quantum state preparation errors, as well as to improve the fidelity of quantum circuits for which some knowledge of the qubits’ intermediate states can be inferred. This paper presents a pathway to using information about noise levels and quantum state distributions to significantly reduce error rates associated with quantum gates via optimized decomposition into native hardware gates.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at V{sub GS} = −40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to −100 V, which is interesting for high-performance transistors dedicated to power applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Note: Time-gated 3D single quantum dot tracking with simultaneous spinning disk imaging

We describe recent upgrades to a 3D tracking microscope to include simultaneous Nipkow spinning disk imaging and time-gated single-particle tracking (SPT). Simultaneous 3D molecular tracking and spinning disk imaging enable the visualization of cellular structures and proteins around a given fluorescently labeled target molecule. The addition of photon time-gating to the SPT hardware improves signal to noise by discriminating against Raman scattering and short-lived fluorescence. In contrast to camera-based SPT, single-photon arrival times are recorded, enabling time-resolved spectroscopy (e.g., measurement of fluorescence lifetimes and photon correlations) to be performed during single molecule/particle tracking experiments.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Impact of gate geometry on ionic liquid gated ionotronic systems

Ionic liquid electrolytes are gaining widespread application as a gate dielectric used to control ion transport in functional materials. This letter systematically examines the important influence that device geometry in standard “side gate” 3-terminal geometries plays in device performance of a well-known oxygen ion conductor. We show that the most influential component of device design is the ratio between the area of the gate electrode and the active channel, while the spacing between these components and their individual shapes has a negligible contribution. Finally, these findings provide much needed guidance in device design intended for ionotronic gating with ionic liquids.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Gate-induced superconductivity in a monolayer topological insulator

The layered semimetal tungsten ditelluride (WTe 2 ) has recently been found to be a two-dimensional topological insulator (2D TI) when thinned down to a single monolayer, with conducting helical edge channels. We found that intrinsic superconductivity can be induced in this monolayer 2D TI by mild electrostatic doping at temperatures below 1 kelvin. The 2D TI–superconductor transition can be driven by applying a small gate voltage. This discovery offers possibilities for gate-controlled devices combining superconductivity and nontrivial topological properties, and could provide a basis for quantum information schemes based on topological protection.

Science & Technology - Other Topics↗
DOE OSTI2013

Gate-to-Gate Life Cycle Analysis Model of Enhanced Oil Recovery [Slides]

A gate-to-gate life cycle analysis (LCA) model was created to quantify the environmental impacts of the various processes associated with enhanced oil recovery (EOR). The following unit processes are accounted for in this analysis: injection and recovery, bulk separation and storage, gas separation, supporting processes, and land use. This analysis used an LCA approach for developing data and EOR and gas processing. The energy and material flows for key processes within the gate-to-gate boundaries of the EOR site were calculated. These processes were then compiled in a model that scaled the flows between processes to arrive at an inventory of environmental burdens on a common basis (e.g., 1 barrel of crude produced via EOR).

02 PETROLEUM↗
NASA NTRS2000

Influence of the Polysilicon Gate on the Random Dopant Induced Threshold Voltage Fluctuations in Sub 100 nm MOSFETS with Thin Gate Oxides

In this paper for the first time we study the influence of the polysilicon gate on the random dopant induced threshold voltage fluctuations in sub 100 nm MOSFETs with tunnelling gate oxides. This is done by using an efficient 3D 'atomistic' simulation technique described elsewhere. Devices with uniform channel doping and with low doped epitaxial channels have been investigated. The simulations reveale that the polysilicon gate is responsible for a substantial fraction of the threshold voltage fluctuations in both devices when the gate oxide is scaled to tunnelling thickness in the range of 1 - 2 nm.

Asenov, Asen↗
NASA NTRS2016

NextGen Far-Term Concept Exploration for Integrated Gate-to-Gate Trajectory-Based Operations

NASA is currently conducting concept exploration studies toward the definition of a far-term, gate-to-gate concept for Trajectory-Based Operations. This paper presents a basic architectural framework for the far-term concept and discusses some observations about implementation of trajectory-based operations in the National Airspace System. Within the concept, operators and service providers collaboratively negotiate aircraft trajectories, providing agile, optimized, aircraft-specific routing to meet service provider gate-to-gate flow-management constraints and increasing capacity by smoothly and effectively combining flight-deck-based and ground-based metering, merging, and spacing in a mixed-equipage environment. The far-term TBO concept is intended to influence the direction of mid-term TBO research and to inform the definition of stable requirements and standards for TBO communications infrastructure and user equipage.

Johnson, Sally C.↗
DOE OSTI2015

Effect of top gate bias on photocurrent and negative bias illumination stress instability in dual gate amorphous indium-gallium-zinc oxide thin-film transistor

We have studied the effect of top gate bias (V{sub TG}) on the generation of photocurrent and the decay of photocurrent for back channel etched inverted staggered dual gate structure amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film-transistors. Upon 5 min of exposure of 365 nm wavelength and 0.7 mW/cm{sup 2} intensity light with negative bottom gate bias, the maximum photocurrent increases from 3.29 to 322 pA with increasing the V{sub TG} from −15 to +15 V. By changing V{sub TG} from negative to positive, the Fermi level (E{sub F}) shifts toward conduction band edge (E{sub C}), which substantially controls the conversion of neutral vacancy to charged one (V{sub O} → V{sub O}{sup +}/V{sub O}{sup 2+} + e{sup −}/2e{sup −}), peroxide (O{sub 2}{sup 2−}) formation or conversion of ionized interstitial (O{sub i}{sup 2−}) to neutral interstitial (O{sub i}), thus electron concentration at conduction band. With increasing the exposure time, more carriers are generated, and thus, maximum photocurrent increases until being saturated. After negative bias illumination stress, the transfer curve shows −2.7 V shift at V{sub TG} = −15 V, which gradually decreases to −0.42 V shift at V{sub TG} = +15 V. It clearly reveals that the position of electron quasi-Fermi level controls the formation of donor defects (V{sub O}{sup +}/V{sub O}{sup 2+}/O{sub 2}{sup 2−}/O{sub i}) and/or hole trapping in the a-IGZO /interfaces.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

SU-E-J-45: Design and Study of An In-House Respiratory Gating Phantom Platform for Gated Radiotherapy

Purpose: The main purpose of this work was to develop an in-house low cost respiratory motion phantom platform for testing the accuracy of the gated radiotherapy system and analyze the dosimetric difference during gated radiotherapy. Methods: An in-house respiratory motion platform(RMP) was designed and constructed for testing the targeting accuracy of respiratory tracking system. The RMP consist of acrylic Chest Wall Platform, 2 DC motors, 4 IR sensors, speed controller circuit, 2 LED and 2 moving rods inside the RMP. The velocity of the movement can be varied from 0 to 30 cycles per minute. The platform mounted to a base using precision linear bearings. The base and platform are made of clear, 15mm thick polycarbonate plastic and the linear ball bearings are oriented to restrict the platform to a movement of approximately 50mm up and down with very little friction. Results: The targeting accuracy of the respiratory tracking system was evaluated using phantom with and without respiratory movement with varied amplitude. We have found the 5% dose difference to the PTV during the movement in comparison with stable PTV. The RMP can perform sinusoidal motion in 1D with fixed peak to peak motion of 5 to 50mm and cycle interval from 2 to 6 seconds. The RMP was designed to be able to simulate the gross anatomical anterior posterior motion attributable to respiration-induced motion of the thoracic region. Conclusion: The unique RMP simulates breathing providing the means to create a comprehensive program for commissioning, training, quality assurance and dose verification of gated radiotherapy treatments. Create the anterior/posterior movement of a target over a 5 to 50 mm distance to replicate tumor movement. The targeting error of the respiratory tracking system is less than 1.0 mm which shows suitable for clinical treatment with highly performance.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2024

CryoEM structures of the human CLC-2 voltage-gated chloride channel reveal a ball-and-chain gating mechanism

CLC-2 is a voltage-gated chloride channel that contributes to electrical excitability and ion homeostasis in many different tissues. Among the nine mammalian CLC homologs, CLC-2 is uniquely activated by hyperpolarization, rather than depolarization, of the plasma membrane. The molecular basis for the divergence in polarity of voltage gating among closely related homologs has been a long-standing mystery, in part because few CLC channel structures are available. Here, we report cryoEM structures of human CLC-2 at 2.46 – 2.76 Å, in the presence and absence of the selective inhibitor AK-42. AK-42 binds within the extracellular entryway of the Cl – -permeation pathway, occupying a pocket previously proposed through computational docking studies. In the apo structure, we observed two distinct conformations involving rotation of one of the cytoplasmic C-terminal domains (CTDs). In the absence of CTD rotation, an intracellular N-terminal 15-residue hairpin peptide nestles against the TM domain to physically occlude the Cl – -permeation pathway. This peptide is highly conserved among species variants of CLC-2 but is not present in other CLC homologs. Previous studies suggested that the N-terminal domain of CLC-2 influences channel properties via a “ball-and-chain” gating mechanism, but conflicting data cast doubt on such a mechanism, and thus the structure of the N-terminal domain and its interaction with the channel has been uncertain. Through electrophysiological studies of an N-terminal deletion mutant lacking the 15-residue hairpin peptide, we support a model in which the N-terminal hairpin of CLC-2 stabilizes a closed state of the channel by blocking the cytoplasmic Cl – -permeation pathway.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint

Insulated gate bipolar transistor (IGBT) power modules are devices commonly used for switching of high voltages and currents. Usage and environmental conditions can cause these power modules to degrade over time, and this gradual process may eventually lead to catastrophic failure of the device. This degradation process may cause some early performance symptoms related to the state of health of the power module, making it possible to detect reliability degradation of the IGBT module. Testing can be used to accelerate this process, permitting a rapid determination of whether specific declines in device reliability can be characterized. In this study, thermal cycling was conducted on multiple power modules simultaneously in order to assess the effect of thermal cycling on the degradation of the power module. In-situ monitoring of temperature was performed from inside each power module using high temperature thermocouples. Device imaging and characterization was performed along with temperature data analysis, to assess failure modes and mechanisms within the power modules. While the experiment was aimed to assess the potential damage effects of thermal cycling on die attach, results indicated that wirebond degradation was the life limiting failure mechanism.

33 ADVANCED PROPULSION SYSTEMS↗