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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Thermolabile triose phosphate isomerase in a psychrophilic Clostridium.

It was found that a psychrophilic Clostridium contains a triose phosphate isomerase which is very labile at moderate temperatures. An investigation showed that the optimal growth temperature of the psychrophile was between 15 and 20 deg C. No growth occurred at 25 deg C. The thermostability of the glycolytic enzymes in the cell-free extracts of Clostridium sp. strain 69 was studied. The data obtained show that the triose phosphate isomerase is quite labile at moderate temperatures. The instability of the enzyme is sufficient to explain the low maximum growth temperature of the psychrophile.

Shing, Y. W.↗
NASA NTRS1993

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

Choi, S. W.↗
NASA NTRS1989

The influence of Sb doping on the growth and electronic properties of GaAs(100) and AlGaAs(100)

Isoelectronic doping using antimony has been shown to reduce traps and improve material properties during epitaxial growth of Si doped GaAs(100) and AlGaAs(100). In this study, the effect of the antimony dopant on the optimal growth temperature is examined with the aim of producing high-quality heterostructures at lower temperatues. High-quality films of GaAs and AlGaAs have been grown by molecular-beam epitaxy at the normal growth temperatures of 610 and 700 C, respectively, and 50-100 C below this temperature using varying small amounts of Sb as a dopant. Electrical properties of the films were then examined using Hall mobility measurements and deep-level transient spectroscopy.

Jamison, K. D.↗
NASA NTRS1991

Characterization of MOCVD fluid dynamics by laser velocimetry

Three-component laser velocimetry techniques are applied to characterize the fluid dynamics of an MOCVD reactor. These methods provide three-dimensional quantitative measurements of the gas velocities inside the reactor at typical growth temperatures. The effects of buoyancy-induced convection are examined by comparing data from the hot reactor with cold reactor results. It was found that thermal convection dominated the fluid dynamics of the reactor at growth temperatures. Cold reactor tests showed unstable flow patterns that were subject to fluidic switching effects.

Johnson, E. J.↗
NASA NTRS1984

Elevated temperature crack growth

Critical gas turbine engine hot section components such as blades, vanes, and combustor liners tend to develop minute cracks during early stages of operations. The ability of currently available path-independent (P-I) integrals to correlate fatigue crack propagation under conditions that simulate the turbojet engine combustor liner environment was determined. To date, an appropriate specimen design and a crack displacement measurement method were determined. Alloy 718 was selected as the analog material based on its ability to simulate high temperature behavior at lower temperatures in order to facilitate experimental measurements. Available P-I integrals were reviewed and the best approaches are being programmed into a finite element post processor for eventual comparison with experimental data. The experimental data will include cyclic crack growth tests under thermomechanical conditions, and, additionally, thermal gradients.

Kim, K. S.↗
NASA NTRS1988

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Lee, Hsing-Chung↗
NASA NTRS1986

Elevated temperature crack growth

It is necessary to relate the processes that control crack growth in the immediate vicinity of the crack tip to parameters that can be calculated from remote quantities, such as forces, stresses, or displacements. The most likely parameters appear to be certain path-independent (PI) integrals, several of which have already been proposed for application to high temperature inelastic problems. The ability of currently available PI-integrals to correlate fatigue crack propagation under conditions that simulate the engine combustor liner environment was determined. The utility of advanced fracture mechanics measurements will also be evaluated and determined during the course of the program.

Malik, S. N.↗
NASA NTRS1984

Fracture temperature and flaw growth in nitronic 40 at cryogenic temperatures

The fracture resistance and fatigue response of Armco Nitronic 40 austenitic stainless steel were evaluated under cryogenic conditions. Tensile, fracture toughness and fatigue crack growth properties were measured at -275 F. The tensile yield strength was approximately 120 ksi and the fracture toughness was estimated to be 350 ksi-in /2 on the basis of fracture toughness measurements. Testing was conducted to evaluate the behavior of a simulated section of the wing of the Pathfinder 1 model subject to a load and temperature history typical of that for testing in the National Transonic Facility. The wing section model incorporated a proposed brazing technique for pressure-transducer attachment. The simulated wing section performed satisfactorily at stress levels of nearly 60 percent of the material yield strength. The brazing technique proved to be an effective method of transducer attachment under conditions of high stress levels and large temperature excursions.

Domack, M. S.↗
NASA NTRS1985

Elevated temperature crack growth

The purpose is to determine the ability of currently available P-I integrals to correlate fatigue crack propagation under conditions that simulate the turbojet engine combustor liner environment. The utility of advanced fracture mechanics measurements will also be evaluated during the course of the program. To date, an appropriate specimen design, a crack displacement measurement method, and boundary condition simulation in the computational model of the specimen were achieved. Alloy 718 was selected as an analog material based on its ability to simulate high temperature behavior at lower temperatures. Tensile and cyclic tests were run at several strain rates so that an appropriate constitutive model could be developed. Suitable P-I integrals were programmed into a finite element post-processor for eventual comparison with experimental data.

Malik, S. N.↗
NASA NTRS1986

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

Lewis, B. F.↗
NASA NTRS1987

Elevated temperature crack growth

The purpose is to determine the ability of currently available P-I integrals to correlate fatigue crack propagation under conditions that simulate the turbojet engine combustor liner environment. The utility of advanced fracture mechanics measurements will also be evaluated. Research showed that the experimentally measured displacements and loads can be accurately predicted by finite element analyses that consider the growth of the fatigue crack. These results are being used to evaluate nonlinear fracture mechanics parameters for correlating the observed fatigue crack growth rates for different strain ranges.

Kim, K. S.↗
NASA NTRS1993

Near-equilibrium growth of thick, high quality beta-SiC by sublimation

A close spaced near-equilibrium growth technique was used to produce thick, high quality epitaxial layers of beta-silicon carbide. The process utilized a sublimation method to grow morphologically smooth layers. The beta silicon carbide growth layers varied from about 200 to 750 microns in thickness. Chemical vapor deposition grown, 2-10 microns, beta silicon carbide films were used as seeds at 1860 and 1910 C growth temperatures. The respective average growth rates were 20 and 30 microns per hour. The layers are p-type with a 3.1 x 10 exp 17/cu cm carrier concentration. Electrical measurements indicate considerable improvement in the breakdown voltage of Schottky barriers on growth samples. Breakdown values ranged from 25 to 60 V. These measurements represent the highest values reported for 3C-SiC.

Shields, Virgil B.↗
NASA NTRS2019

Air and Water Temperature Relationship and Growth of Hyacinth and Primrose

Temperature is a primary determining factor for plant growth and development so providing an appropriate temperature input is critically important for developing growth models. The Delta Region Areawide Aquatic Weed Project (DRAAWP), a USDA (US Dept. of Agriculture)-sponsored area-wide project including NASA Ames Research Center and State of California Department of Boating and Waterways, uses modeling to assess invasive aquatic plant impacts on ecosystem services in the Delta. Availability of continuous records for monitored temperature is limited and particularly in the case of water temperature the distribution of monitoring is inadequate. This work quantitatively defines the influence of air and water temperature in determining dominant growth rate processes for important floating aquatic invasive plants in the Delta. Since these plants function with portions submerged and above water we wanted to understand the relationship between root zone and shoot zone temperature and ability to use a single temperature inputs in DRAAWP models. Water Hyacinth and Primrose were gown in multiple controlled environment chamber studies with various combinations of root zone and shoot zone temperatures. Long-term growth studies provided integrated response of biomass accumulation and distribution within the canopy. Short-term gas exchange studies provide a time scale for responsiveness to temperature and a short-term study approach to evaluate temperature responses at various stages of canopy development.

Hyacinth↗
NASA NTRS1992

Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE

InGaAs/GaAs heterostructures grown on (001) substrates by low-pressure MOVPE exhibit a measurable anisotropy in their structural, optical and electrical properties. This anisotropy occurs in structures which have undergone partial or complete strain relaxation and it can be strongly reduced by using slightly misoriented substrates. A comparison with similar structures grown by CBE indicates that this anisotropy is less important. This study suggests that strain relaxation is achieved by a combination of several mechanisms whose relative importance depends on the orientation of the substrate and on growth temperature which varies with the growth technique.

Roth, A. P.↗
NASA NTRS1982

Stress studies in EFG

A program to study stress generation mechanisms in silicon sheet growth was started. The purpose of the research is to define post-growth temperature profiles for the sheet that can minimize its stress during growth at high speeds, e.g., greater than 3 cm/min. The initial tasks described concern work in progress toward the development of computing capabilities to (1) model stress-temperature relationships in steady-state ribbon growth, and (2) provide a means to calculate realistic temperature fields in ribbon, given growth system component temperatures as boundary conditions. If it is determined that low stress configurations can be achieved, the modeling is to be tested experimentally by constructing low-stress growth systems for EFG silicon ribbon.

Source record↗
NASA NTRS1982

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Gale, R. P.↗
NASA NTRS2008

High-Temperature Crystal-Growth Cartridge Tubes Made by VPS

Cartridge tubes for use in a crystal growth furnace at temperatures as high as 1,600 deg. C have been fabricated by vacuum plasma spraying (VPS). These cartridges consist mainly of an alloy of 60 weight percent molybdenum with 40 weight percent rhenium, made from molybdenum powder coated with rhenium. This alloy was selected because of its high melting temperature (approximately equal.2,550 C) and because of its excellent ductility at room temperature. These cartridges are intended to supplant tungsten/nickel-alloy cartridges, which cannot be used at temperatures above approximately equal 1,300 C.

Holmes, Richard↗