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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2008

High Temperature Electronics for Intelligent Harsh Environment Sensors

The development of intelligent instrumentation systems is of high interest in both public and private sectors. In order to obtain this ideal in extreme environments (i.e., high temperature, extreme vibration, harsh chemical media, and high radiation), both sensors and electronics must be developed concurrently in order that the entire system will survive for extended periods of time. The semiconductor silicon carbide (SiC) has been studied for electronic and sensing applications in extreme environment that is beyond the capability of conventional semiconductors such as silicon. The advantages of SiC over conventional materials include its near inert chemistry, superior thermomechanical properties in harsh environments, and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
DOE OSTI2025

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Thermal Conversion of Ultrathin Nickel Hydroxide for Wide Band Gap 2D Nickel Oxides

Wide band gap (WBG) semiconductors (E g > 2.0 eV) are integral to the advancement of next-generation electronics, optoelectronics, and power industries owing to their capability for high-temperature operation, high breakdown voltage, and efficient light emission. Enhanced power efficiency and functional performance can be attained through miniaturization, specifically via the integration of device fabrication into a two-dimensional (2D) structure enabled by WBG 2D semiconductors. However, as an essential subgroup of WBG semiconductors, 2D transition metal oxides (TMOs) remain largely underexplored in terms of physical properties and applications in 2D optoelectronic devices, primarily due to the scarcity of sufficiently large 2D crystals. Thus, our goal is to develop synthesis pathways for 2D TMOs possessing large crystal domains (e.g., >10 μm), expanding the 2D TMO family and providing insights for future engineering of 2D TMOs. Here, we demonstrate the synthesis of WBG 2D nickel oxide (NiO) (E g > 2.7 eV) thermally converted from 2D nickel hydroxide (Ni(OH) 2 ) with a lateral domain size larger than 10 μm. Moreover, the conversion process is investigated using various microscopic techniques, such as atomic force microscopy, Raman spectroscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy, providing significant insights into morphology and structural variations under different oxidative conditions. The electronic structure of the converted Ni x O y is further investigated using multiple soft X-ray spectroscopies, such as X-ray absorption and emission spectroscopies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Robust low-temperature (350 °C) ferroelectric Hf 0.5 Zr 0.5 O 2 fabricated using anhydrous H 2 O 2 as the ALD oxidant

Here, in this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf 0.5 Zr 0.5 O 2 (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H 2 O 2 oxidant in the atomic layer deposition process. As a consequence of this densification, H 2 O 2 -based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H 2 O 2 -based HZO capacitor with a high remanent polarization ( P r ), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O 3 -based HZO capacitor requires wake-up cycling to achieve stable P r , the H 2 O 2 -based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H 2 O 2 oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C).

36 MATERIALS SCIENCE↗
NASA NTRS1974

High-voltage distributors

Two distributors reduce high-voltage breakdowns and corona discharges. Both distributors are constructed to prevent air traps and facilitate servicing without soldering. Occurrence of coronas is also minimized due to smooth surfaces of device.

Mcchesney, J. F., Jr.↗
NASA NTRS1984

Hollow cathode apparatus

A hollow cathode apparatus is described, which can be rapidly and reliably started. An ignitor positioned upstream from the hollow cathode, generates a puff of plasma that flows with the primary gas to be ionized through the cathode. The plasma puff creates a high voltage breakdown between the downstream end of the cathode and a keeper electrode, to heat the cathode to an electron-emitting temperature.

Aston, G.↗
NASA NTRS1986

Investigation of a repetitive pulsed electrothermal thruster

A pulsed electrothermal (PET) thruster with 1000:1 ratio nozzle is tested in a repetitive mode on water propellant. The thruster is driven by a 60J pulse forming network at repetition rates up to 10 Hz (600W). The pulse forming network has a .31 ohm impedance, well matched to the capillary discharge resistance of .40 ohm, and is directly coupled to the thruster electrodes without a switch. The discharge is initiated by high voltage breakdown, typically at 2500V, through the water vapor in the interelectrode gap. Water is injected as a jet through a .37 mm orifice on the thruster axis. Thruster voltage, current and impulse bit are recorded for several seconds at various power supply currents. Thruster to power ratio is typically T/P = .07 N/kW. Tank background pressure precludes direct measurement of exhaust velocity which is inferred from calculated pressure and temperature in the discharge to be about 14 km/sec. Efficiency, based on this velocity and measured T/P is .54 + or - .07. Thruster ablation is zero at the throat and becomes measurable further upstream, indicating that radiative ablation is occurring late in the pulse.

Burton, R. L.↗
NASA NTRS1990

The effects of extraterrestrial environments on high voltage distribution

The problems encountered in the transmission of high-power (kilowatts to megawatts) in extraterrestrial environments are reviewed. A summary of the work at Auburn University in the study of these problems is presented. These studies include high-voltage breakdown in the space environment as influenced by gas contamination and thermal stress, the modeling of lunar transmission lines, particle contamination, and material degradation by the hypervelocity impact of microparticles.

Gordon, Lloyd B.↗
NASA NTRS1990

Effect of structure and morphology on thermal and electrical properties of polycarbonate film capacitors

Research is reported to identify polycarbonate (PC) film characteristics and fabrication procedures which extend the reliable performance range of PC capacitors to 125 C without derating, and establish quality control techniques and transfer technology to US PC film manufacturers. The approach chosen to solve these problems was to develop techniques for fabricating biaxially oriented (BX) 2 microns or thinner PC film with a low dissipation factor up to 140 C; isotropic dimensional stability; high crystallinity; and high voltage breakdown strength. The PC film structure and morphology was then correlated to thermal and electrical capacitor behavior. Analytical techniques were developed to monitor film quality during capacitor fabrication, and as a result, excellent performance was demonstrated during initial capacitor testing.

Yen, S. P. S.↗
NASA NTRS1996

Megavolt, Multigigawatt Pulsed Plasma Switch

Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.

Lee, Ja H.↗
DOE OSTI2024

TinyTPC: A TEST STAND FOR LAr DOPING

TinyTPC is a small scale liquid-argon time projection chamber (LArTPC) that studies how photosensitive dopants can improve the energy resolution of low energy events in LArTPCs. Bench tests to resolve high voltage breakdown issues and to improve the low voltage system readout are described. Experimental data with a radioactive source of Th-228 for the calibration of the pixelated readout and the characterization of TinyTPC's energy resolution is explained. Provisional results from the addition of isobutylene (photosensitive dopant) and xenon (wavelength shifter) to liquid-argon (LAr) are also presented. Further steps to improve voltage system and enhance the data collection are discussed.

Rodriguez Thorne, Paloma↗
NASA NTRS1969

Proceedings of the Second Workshop on Voltage Breakdown in Electronic Equipment at Low Air Pressure

The Second Workshop on Voltage Breakdown in Electronic Equipment at Low Air Pressure was sponsored by the Jet Propulsion Laboratory, Pasadena, California. It has been three and one-half years since the convening of the first workshop on voltage breakdown. In this interval, gains are evidenced in the progress and sophistication in solving voltage breakdown problems affecting electronic equip­ment operating at high altitudes or other low air pressure environments. Although space applications predominate the area of concern, other projects such as the SST are becoming increasingly involved with voltage breakdown. High-voltage breakdown in spacecraft continues; however, the incidences of occurrence appear to have decreased in spite of an increase in the number of missions flown. This, it is felt, is due to many project managers now requiring all equipment with voltage in excess of 270-V peak to be designed to operate in the critical pressure region without damage, even though its normal functional environment is sea level pressure and the hard vacuum of space. In addition, designers are becoming more aware of the principle of good high-voltage design by selecting void-free components, proper spacing of conductors, isolating high-­voltage circuitry from lower voltage areas, etc. The consensus seems to be that the slight increase in cost to achieve a provable corona-free design is more than offset by the increase in confidence that the equipment will survive accidental loss of vacuum during high-vacuum tests, inadvertent turn on while passing through the critical air-pressure region of earth after launch or outgassing in flight pressurizing the enclosure into the critical pressure region.

E. R. Bunker, Jr.↗
NASA NTRS1979

A study of the deposition of carbide coatings on graphite fibers

The chemical vapor deposition of boron carbide and silicon carbide on graphite fibers to increase their electrical resistance was studied. Silicon carbide coatings were applied without degradation of the mechanical properties of the filaments. These coatings typically added 1000 ohms to the resistance of a filament as measured between two mercury pools. When SiC-coated filaments were oxidized by refluxing in boiling phosphoric acid, average resistance increased by an additional 1000 ohms; in addition resistance increases as high as 150 K ohms and breakdown voltages as high as 17 volts were noted. Data on boron carbide coatings indicated that such coatings would not be effective in increasing resistance, and would degrade the mechanical properties.

Suplinskas, R. J.↗
DOE OSTI2026

Electrode Erosion and Prefire Studies Towards Fusion Scale Pulsed Power

This study presents a comprehensive investigation of electrode erosion and discharge behavior in spark gap switches over long switching cycle lifetimes. Brass, copper–tungsten (CuW), and stainless steel electrodes are tested under controlled conditions to quantify material degradation, debris accumulation, and changes in breakdown voltage. High-resolution imaging and statistical analysis of spark channel locations and gap breakdown voltages reveal how surface evolution influences long-term performance and reliability. These results provide essential data for lifetime modeling and inform design strategies for pulsed power systems in emerging applications such as private sector fusion energy and large-scale facilities like Sandia’s Z Machine and proposed ZX upgrades, where high repetition reliability and predictable behavior are critical.

electrical breakdown↗