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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRS1992

Electro-Optical High-Voltage Sensors

Electro-optical sensors for measuring high voltages developed for use in automatically controlled power-distribution systems. Sensors connected to optoelectronic interrogating equipment by optical fibers. Because sensitive material and optical fibers are all dielectric, no problem in electrically isolating interrogating circuitry from high voltage, and no need for voltage dividers. Sensor signals transmitted along fibers immune to electromagnetic noise at radio and lower frequencies.

Gottsche, Allan↗
NASA NTRS1992

Bulk Electro-Optical Polymer Component

Polymer serves in high-voltage sensors and laser-beam modulators. Electro-optical polymer of relatively low cost formed as bulk specimen from azo dye 4-(4-nitrophenylazo)-N-ethyl, N-2-hydroxyethylaniline, also known as Disperse Red 1 or DR1, and transparent epoxy. More stable than prior electro-optical polymers based on DR1 and poly(methylmethacrylate). If polymer were sandwiched between electrodes, it provides direct measurement of high voltage via electro-optical effect. Has significant nonlinear optical properties. Material useful in microelectronics, micro-optics, integrated optics, and testing of materials. Polymer withstands electric fields up to 120 kV/cm.

Gottsche, Allan↗
NASA NTRS1992

Dielectric breakdown studies of Teflon perfluoroalkoxy at high temperature

Teflon perfluoroalkoxy (PFA) was evaluated for use as a dielectric material in high-temperature high-voltage capacitors for space applications. The properties that were characterized included the dc dielectric strength at temperatures up to 250 C and the permittivity and dielectric loss as a function of frequency, temperature and voltage. To understand the breakdown mechanism taking place at high temperatures, the pre-breakdown discharge and conduction currents, and the dependence of dielectric strength on thickness of the film were determined. Confocal laser microscopy was performed to diagnose for microimperfections within the film structure. The results obtained show a significant decrease in the dielectric strength and an increase in dielectric loss with an increase in temperature, suggesting that impulse thermal breakdown could be a responsible mechanism in PFA film at temperatures above 150 C.

Suthar, J. L.↗
NASA NTRS1994

Copper Alloy For High-Temperature Uses

Alloy of Cu/8Cr/4Nb (numbers indicate parts by atom percent) improved over older high-temperature copper-based alloys in that it offers enhanced high temperature strength, resistance to creep, and ductility while retaining most of thermal conductivity of pure copper; in addition, alloy does not become embrittled upon exposure to hydrogen at temperatures as high as 705 degrees C. Designed for use in presence of high heat fluxes and active cooling; for example, in heat exchangers in advanced aircraft and spacecraft engines, and other high-temperature applications in which there is need for such material. High conductivity and hardness of alloy exploited in welding electrodes and in high-voltage and high-current switches and other applications in which wear poses design problem.

Dreshfield, Robert L.↗
NASA NTRS1995

High-voltage space-plasma interactions measured on the PASP Plus test arrays

The Photovoltaic Array Space Power Plus Diagnostics (PASP Plus) experiment was developed by the Air Force's Phillips Laboratory with support from NASA's Lewis Research Center. It was launched on the Advanced Photovoltaic and Electronics EXperiments (APEX) satellite on August 3, 1994 into a 70 degree inclination, 363 km by 2550 km elliptical orbit. This orbit allows the investigation of space plasma effects on high-voltage operation (leakage current at positive voltages and arcing at negative voltages) in the perigee region. PASP Plus is testing twelve solar arrays. There are four planar Si arrays: an old standard type (used as a reference), the large-cell Space Station Freedom (SSF) array, a thin 'APSA' array, and an amorphous Si array. Next are three GaAs on Ge planar arrays and three new material planar arrays, including InP and two multijunction types. Finally, there are two concentrator arrays: a reflective-focusing Mini-Cassegrainian and a Fresnel-lens focusing Mini-Dome. PASP Plus's diagnostic sensors include: Langmuir probe to measure plasma density, an electrostatic analyzer (ESA) to measure the 30 eV to 30 KeV electron/ion spectra and determine vehicle negative potential during positive biasing, and a transient pulse monitor (TPM) to characterize the arcs that occur during the negative biasing. Through positive biasing of its test arrays, PASP Plus investigated the snapover phenomenon, which took place over the range of +100 to +300 V. It was found that array configurations where the interconnects are shielded from the space plasma (i.e., the concentrators or arrays with 'wrap-through' connectors) have lower leakage current. The concentrators exhibited negligible leakage current over the whole range up to +500 V. In the case of two similar GaAs on Ge arrays, the one with 'wrap-through' connectors had lower leakage current than the one with conventional interconnects. Through negative biasing, PASP Plus investigated the arcing rates of its test arrays. The standard Si array, with its old construction (exposed rough-surface interconnects), arced significantly over a wide voltage and plasma-density range. The other arrays arced at very low rates, mostly at voltages greater than -350 V and plasma densities near or greater than 10(exp 5)/cm(exp -3). AS expected according to theory, arcing was more prevalent when array temperatures were cold (based on biasing in eclipse).

Guidice, Donald A.↗
NASA NTRS1995

Insulation Requirements of High-Voltage Power Systems in Future Spacecraft

The scope, size, and capability of the nation's space-based activities are limited by the level of electrical power available. Long-term projections show that there will be an increasing demand for electrical power in future spacecraft programs. The level of power that can be generated, conditioned, transmitted, and used will have to be considerably increased to satisfy these needs, and increased power levels will require that transmission voltages also be increased to minimize weight and resistive losses. At these projected voltages, power systems will not operate satisfactorily without the proper electrical insulation. Open or encapsulated power supplies are currently used to keep the volume and weight of space power systems low and to protect them from natural and induced environmental hazards. Circuits with open packaging are free to attain the pressure of the outer environment, whereas encapsulated circuits are imbedded in insulating materials, which are usually solids, but could be liquids or gases. Up to now, solid insulation has usually been chosen for space power systems. If the use of solid insulation is continued, when voltages increase, the amount of insulation for encapsulation also will have to increase. This increased insulation will increase weight and reduce system reliability. Therefore, non-solid insulation media must be examined to satisfy future spacecraft power and voltage demands. In this report, we assess the suitability of liquid, space vacuum, and gas insulation for space power systems.

Qureshi, A. Haq↗
NASA NTRS2003

Ground Tests of High-Voltage Solar Arrays Immersed in a Low Density Plasma

Five different types of solar arrays have been tested in large vacuum chamber. Arc inception voltages, arc rates, and current collections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness does not improve measured array parameters. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 pm coverglass thickness and 60 V for the sample with 150 urn coverglass thickness.

Vayner, Boris↗
NASA NTRS2003

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current selections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness cases the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 micron coverglass thickness and 60 V for the sample with 150 micron coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗
NASA NTRS2004

Grid Sphere Electrodes used for Current Collection at the Positive Pole of Electrodynamic Tethers

The generation of either electrical power or propulsive thrust with an electrodynamic tether system necessarily depends on driving a return current through the system's ambient space plasma environment. An electrical connection is, therefore, required between the plasma and each end of the tether. The voltage required to drive current through the system is derived either from the orbital motion of the conducting tether through the magnetic field of the Earth, or from a high-voltage power supply that taps into an external energy source (e.g., the sun). In either case, one end of the tether will receive a positive bias. This positive bias, between the tether and the ambient plasma, allows electrons to be collected effectively with a simple, passive electrode. Passive electrode contactors offer several important advantages, including simplification of the upper end-body design and operations, minimization of system mass, and an increase of system reliability and robustness. A preliminary analysis of an inflatable Grid-Sphere end-body concept is presented that is interesting because of the potential for collecting arbitrarily large currents independent of tether length, while the device has the physical characteristics of a high area-to-mass ratio, a low drag coefficient, and simplicity. In particular, we will discuss the physics of current collection by a biased Grid-Sphere and the present state-of-the-art of materials, attainable area-to-mass ratios, and deployment techniques.

Stone, N. H.↗
NASA NTRS2004

Solar Array in Simulated LEO Plasma Environment

Six different types of solar arrays have been tested in large vacuum chambers. The low Earth orbit plasma environment was simulated in plasma vacuum chambers, where the parameters could be controlled precisely. Diagnostic equipment included spherical Langmuir probes, mass spectrometer, low-noise CCD camera with optical spectrometer, video camera, very sensitive current probe to measure arc current, and a voltage probe to register variations in a conductor potential. All data (except video) were obtained in digital form that allowed us to study the correlation between external parameters (plasma density, additional capacitance, bias voltage, etc) and arc characteristics (arc rate, arc current pulse width and amplitude, gas species partial pressures, and intensities of spectral lines). Arc inception voltages, arc rates, and current collections are measured for samples with different coverglass materials and thickness, interconnect designs, and cell sizes. It is shown that the array with wrapthrough interconnects have the highest arc threshold and the lowest current collection. Coverglass design with overhang results in decrease of current collection and increase of arc threshold. Doubling coverglass thickness causes the increase in arc inception voltage. Both arc inception voltage and current collection increase significantly with increasing a sample temperature to 80 C. Sustained discharges are initiated between adjacent cells with potential differences of 40 V for the sample with 300 m coverglass thickness and 60 V for the sample with 150 m coverglass thickness. Installation of cryogenic pump in large vacuum chamber provided the possibility of considerable outgassing of array surfaces which resulted in significant decrease of arc rate. Arc sites were determined by employing a video-camera, and it is shown that the most probable sites for arc inception are triple-junctions, even though some arcs were initiated in gaps between cells. It is also shown that the arc rate increases with increasing of ion collection current. The analysis of optical spectra (240-800 nm) reveals intensive narrow atomic lines (Ag, H) and wide molecular bands (OH, CH, SiH, SiN) that confirms a complicated mechanism of arc plasma generation. The results obtained seem to be important for the understanding of the arc inception mechanism, which is absolutely essential for progress toward the design of high-voltage solar array for space application.

Vayner, Boris↗
NASA NTRS2004

Volume and Mass Estimation of Three-Phase High Power Transformers for Space Applications

Spacecraft historically have had sub-1kW(sub e), electrical requirements for GN&C, science, and communications: Galileo at 600W(sub e), and Cassini at 900W(sub e), for example. Because most missions have had the same order of magnitude power requirements, the Power Distribution Systems (PDS) use existing, space-qualified technology and are DC. As science payload and mission duration requirements increase, however, the required electrical power increases. Subsequently, this requires a change from a passive energy conversion (solar arrays and batteries) to dynamic (alternator, solar dynamic, etc.), because dynamic conversion has higher thermal and conversion efficiencies, has higher power densities, and scales more readily to higher power levels. Furthermore, increased power requirements and physical distribution lengths are best served with high-voltage, multi-phase AC to maintain distribution efficiency and minimize voltage drops. The generated AC-voltage must be stepped-up (or down) to interface with various subsystems or electrical hardware. Part of the trade-space design for AC distribution systems is volume and mass estimation of high-power transformers. The volume and mass are functions of the power rating, operating frequency, the ambient and allowable temperature rise, the types and amount of heat transfer available, the core material and shape, the required flux density in a core, the maximum current density, etc. McLyman has tabulated the performance of a number of transformers cores and derived a "cookbook" methodology to determine the volume of transformers, whereas Schawrze had derived an empirical method to estimate the mass of single-phase transformers. Based on the work of McLyman and Schwarze, it is the intent herein to derive an empirical solution to the volume and mass estimation of three-phase, laminated EI-core power transformers, having radiated and conducted heat transfer mechanisms available. Estimation of the mounting hardware, connectors, etc. is not included.

Kimnach, Greg L.↗
NASA NTRS1996

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗
NASA NTRS2004

Advanced Electrical Materials and Components Being Developed

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

Schwarze, Gene E.↗
NASA NTRS1999

Silicon Carbide Being Developed for High-Definition Television (HDTV) Transmitter Modules

Through a Space Act Agreement, the NASA Lewis Research Center has helped develop the base silicon carbide (SiC) epitaxial growth technology for Westinghouse's efforts to bring silicon carbide products to the marketplace. SiC is a high-temperature, high-voltage semiconductor that can deliver greater than three times the power of conventional silicon devices. The technology was initially disclosed in the 1994 R&T report. NASA Lewis High Temperature Integrated Electronics and Sensors (HTIES) team is developing SiC as a material for advanced semiconductor electronic device applications because SiC-based electronics and sensors can operate in hostile environments where conventional silicon-based electronics cannot function. SiC transmitters hold great promise for television stations because they can convert broadcasts from analog to digital signals. A modular solid-state design provides broadcasters with an option to gradually add modules, increasing the power of their transmitters as they expand their high-definition television (HDTV) coverage. Using these high-power transistors will significantly reduce the space needed for high-power transmitters at television stations and will offer a solid-state solution, reducing long-term maintenance costs. Thus, transmitter manufacturers will be able to abandon their reliance on tube-based technology for high-power transmitters and will be able to build smaller, high-power, solid-state transmitters.

Costello, Donald E.↗
NASA NTRS2004

Novel High-Voltage, High-Power Piezoelectric Transformer Developed and Demonstrated for Space Communications Applications

Improvements in individual piezoelectric transformer (PT) performance and the combination of these PTs in a unique modular topology under a Phase I contract with the NASA Glenn Research Center have enabled for the first time the simultaneous achievement of both high voltage and high power at much higher levels than previously obtained with any PT. Feasibility was demonstrated by a prototype transformer (called a Tap-Soner), which is shown in the preceding photograph as part of a direct-current to direct-current (dc-dc) converter having two outputs rated at 1.5 kV/5 W and 4.5 kV/20 W. The power density of 3.5 W/cm3 is significantly lower than for magnetic transformers with the same voltage and power output. This development, which is being done under a Small Business Innovation Research (SBIR) contract by Face Electronics, LC (Norfolk, VA), is based on improvements in the materials and design of Face's basic patented Transoner-T3 PT, shown in the left in the following figure. The T3 PT is most simply described as a resonant multilayer transducer where electrical energy at the input section is efficiently mechanically coupled to the output section, which then vibrates in a fundamental longitudinal mode to generate a high gain in voltage. The piezoelectric material used is a modified lead-zirconium-titanate-based ceramic. One of the significant improvements in PT design was the incorporation of a symmetrical double input layer, shown on the right in the following figure, which eliminated the lossy bending vibration modes characteristic of a single input layer. The performance of the improved PT was optimized to 1.5 kV/5 W. The next step was devising a way to combine the individual PTs in a modular circuit topology needed to achieve the desired high voltage and power output. Since the optimum performance of the individual PT occurs at resonance, the most efficient operation of the modular transformer was achieved by using a separate drive circuit for each PT. The output section consists of a separate output rectifier for each PT connected in series.

Carazo, Alfredo V.↗
NASA NTRS2006

Evolution and Control of 2219 Aluminum Microstructural Features Through Electron Beam Freeform Fabrication

The layer-additive nature of the electron beam freeform fabrication (EBF3) process results in a tortuous thermal path producing complex microstructures including: small homogeneous equiaxed grains; dendritic growth contained within larger grains; and/or pervasive dendritic formation in the interpass regions of the deposits. Several process control variables contribute to the formation of these different microstructures, including translation speed, wire feed rate, beam current and accelerating voltage. In electron beam processing, higher accelerating voltages embed the energy deeper below the surface of the substrate. Two EBF3 systems have been established at NASA Langley, one with a low-voltage (10-30kV) and the other a high-voltage (30-60 kV) electron beam gun. Aluminum alloy 2219 was processed over a range of different variables to explore the design space and correlate the resultant microstructures with the processing parameters. This report is specifically exploring the impact of accelerating voltage. Of particular interest is correlating energy to the resultant material characteristics to determine the potential of achieving microstructural control through precise management of the heat flux and cooling rates during deposition.

Taminger, Karen M.↗
NASA NTRS2006

Evolution and Control of 2219 Aluminum Microstructural Features through Electron Beam Freeform Fabrication

Electron beam freeform fabrication (EBF3) is a new layer-additive process that has been developed for near-net shape fabrication of complex structures. EBF3 uses an electron beam to create a molten pool on the surface of a substrate. Wire is fed into the molten pool and the part translated with respect to the beam to build up a 3-dimensional structure one layer at a time. Unlike many other freeform fabrication processes, the energy coupling of the electron beam is extremely well suited to processing of aluminum alloys. The layer-additive nature of the EBF3 process results in a tortuous thermal path producing complex microstructures including: small homogeneous equiaxed grains; dendritic growth contained within larger grains; and/or pervasive dendritic formation in the interpass regions of the deposits. Several process control variables contribute to the formation of these different microstructures, including translation speed, wire feed rate, beam current and accelerating voltage. In electron beam processing, higher accelerating voltages embed the energy deeper below the surface of the substrate. Two EBF3 systems have been established at NASA Langley, one with a low-voltage (10-30kV) and the other a high-voltage (30-60 kV) electron beam gun. Aluminum alloy 2219 was processed over a range of different variables to explore the design space and correlate the resultant microstructures with the processing parameters. This report is specifically exploring the impact of accelerating voltage. Of particular interest is correlating energy to the resultant material characteristics to determine the potential of achieving microstructural control through precise management of the heat flux and cooling rates during deposition.

Taminger, Karen M.↗
NASA NTRS2005

Dusty-Plasma Particle Accelerator

A dusty-plasma apparatus is being investigated as means of accelerating nanometer- and micrometer-sized particles. Applications for the dusty-plasma particle accelerators fall into two classes: Simulation of a variety of rapidly moving dust particles and micrometeoroids in outer-space environments that include micrometeoroid streams, comet tails, planetary rings, and nebulae and Deposition or implantation of nanoparticles on substrates for diverse industrial purposes that could include hardening, increasing thermal insulation, altering optical properties, and/or increasing permittivities of substrate materials. Relative to prior apparatuses used for similar applications, dusty-plasma particle accelerators offer such potential advantages as smaller size, lower cost, less complexity, and increased particle flux densities. A dusty-plasma particle accelerator exploits the fact that an isolated particle immersed in plasma acquires a net electric charge that depends on the relative mobilities of electrons and ions. Typically, a particle that is immersed in a low-temperature, partially ionized gas, wherein the average kinetic energy of electrons exceeds that of ions, causes the particle to become negatively charged. The particle can then be accelerated by applying an appropriate electric field. A dusty-plasma particle accelerator (see figure) includes a plasma source such as a radio-frequency induction discharge apparatus containing (1) a shallow cup with a biasable electrode to hold the particles to be accelerated and (2) a holder for the substrate on which the particles are to impinge. Depending on the specific design, a pair of electrostatic-acceleration grids between the substrate and discharge plasma can be used to both collimate and further accelerate particles exiting the particle holder. Once exposed to the discharge plasma, the particles in the cup quickly acquire a negative charge. Application of a negative voltage pulse to the biasable electrode results in the initiation of a low-current, high-voltage cathode spot. Plasma pressure associated with the cathode spot as well as the large voltage drop at the cathode spot accelerates the charged particles toward the substrate. The ultimate kinetic energy attained by particles exiting the particle holder depends in part on the magnitude of the cathode spot sheath potential difference, which is proportional to the magnitude of the voltage pulse, and the on the electric charge on the dust. The magnitude of the voltage pulse can be controlled directly, whereas the particle s electric charge can be controlled indirectly by controlling the operating parameters of the plasma apparatus.

Foster, John E.↗