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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Ligand Control of Ultrafast Hot-Carrier Cooling in CdSe Quantum Dots by a Coherent Nonadiabatic Mechanism

Using the results from global modeling of the broadband two-dimensional electronic spectrum and an analysis of the concurrent damping of excited-state vibronic coherences, we show herein that a coherent nonadiabatic mechanism converts the electronic excitation energy of the X3 (1P 3/2 –1P e ) exciton state to ligand vibrations on the <50 fs time scale in oleate- and hexadecylamine-capped CdSe quantum dots. A comparison of the rates for the two ligands suggests that this process is promoted by mid-frequency vibrations of the ligands due to modulation of their electron-donating tendency. An intramolecular vibrational redistribution process then follows on the ∼200 fs time scale with both ligands, which accompanies thermalization in the band-edge X1 (1S 3/2 –1S e ) state and dephasing of the spectator ligand vibrations. These findings suggest that charge-separated intermediates associated with photoinduced charge transfer or triplet–triplet excitation energy transfer will be produced with retention of phase coherence in the vibrations that modulate the charge-transfer character of surface-bound organic acceptors.

14 SOLAR ENERGY↗
DOE OSTI2025

Anomalously slow hot carrier cooling and insulator-to-metal transition in a photo-doped Mott insulator

Photo-doped Mott insulators can exhibit novel photocarrier transport and relaxation dynamics and non-equilibrium phases. However, time-resolved real-space imaging of these processes are still lacking. Here, we use scanning ultrafast electron microscopy (SUEM) to directly visualize the spatial-temporal evolution of photoexcited species in a spin-orbit assisted Mott insulator α-RuCl 3 . At low optical fluences, we observe extremely long hot photocarrier transport time over one nanosecond, almost an order of magnitude longer than any known values in conventional semiconductors. At higher optical fluences, we observe nonlinear features suggesting a photo-induced insulator-to-metal transition, which is unusual in a large-gap Mott insulator. Our results demonstrate the rich physics in a photo-doped Mott insulator that can be extracted from spatial-temporal imaging and showcase the capability of SUEM to sensitively probe photoexcitations in strongly correlated electron systems.

42 ENGINEERING↗
NASA NTRS1995

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Alfano, R. R.↗
DOE OSTI2021

Hot Carrier Redistribution, Electron-Phonon Interaction, and Their Role in Carrier Relaxation in Thin Film Metal-Halide Perovskites

Temperature dependent (4–295 K) photoluminescence and transmission spectra are analyzed to study the effect of changing the different components of a perovskite compound, be it A, B, or X. Four different films are compared: FAMAPbSnI3, FAPbI3, FAMAPbI3, and FAPbBr3. The low temperature results highlight the changes that occur, especially underlying ones that are easily masked at room temperature. The overall Stokes shift is of similar magnitude at room temperature for the three Pb only based samples. This is governed by the interaction strength GLO, phonon energy ELO, and exciton binding energy Eex. One exception to this behavior is the Sn based FAMAPbSnI3 film, which shows a lack of Stokes shift between the absorption and photoluminescence. However, the strong absorption (more than 100 meV) below the band gap is indicative of an excitonic feature that has a large density of states. Transient absorption measurements confirm the trends observed in continuous wave (CW) measurements; the three Pb only films all show the convolution of an excitonic feature within 20 meV of the band gap as a contributing factor to the photobleach along with a region of high energy photoinduced absorption (PIA). However, the behavior for the Sn based film is notably different (just as it is in the CW measurements) with an unusual low energy PIA and a lack of high energy PIA. The large unusual low energy PIA is attributed to the large sub-band-gap absorption observed in the CW transmission/absorption measurements. Notably, regardless of interchanging components, the slow cooling of carriers in metal-halide perovskites shows little effect of GLO, ELO, and Eex. As such, here it is proposed that while the initial cooling of carriers is attributed to LO phonons, the overall cooling of carriers is dominated by the intrinsic low thermal conductivity of all metal-halide perovskites, which limits the dissipation of acoustic phonons in these systems

2D perovskites↗
DOE OSTI2025

Catalysis Driven by Confined Hot Carriers at the Liquid/Metal/Zeolite Interface

In chemical industry controlling the activity and selectivity of a chemical conversion process is of immense importance. Traditionally, dissipation of thermal energy drives transformation of reactants, which may lead to formation of a variety of products; it remains a key challenge to design a process that dissociation and formation of specific chemical bonds can be triggered to form certain desirable products with very high selectivity, preferably at low temperatures. Introduction of light-sensitive solid materials into catalysis provides a powerful, alternate strategy for this purpose.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1992

Probing hot-carrier transport and elastic scattering using ballistic-electron-emission microscopy

Ballistic-electron-emission microscopy (BEEM) has been used to characterize electron transport and scattering in metal/semiconductor structures. A SiO2 layer at the Au/Si interface was patterned to form transmitting and nontransmitting regions. By analyzing the BEEM current profiles at the boundaries of these regions, information on the spatial distribution of electrons after transport through the Au layer can be derived. A detailed comparison is made between the results presented here and models which involve modification of the electron distribution by scattering.

Milliken, A. M.↗
DOE OSTI2025

Controlling Interfacial Energetics and Charge Transfer Rates in 2D Semiconductors: Fundamental Studies en Route to Photoelectrochemical Energy Conversion Beyond the Shockley-Queisser Limit (Final Scientific/Technical Report)

Current photovoltaic and solar-to-fuel technologies do not fully utilize the energy of sunlight because excess photon energy above the semiconductor band gap is rapidly lost as heat through hot-carrier thermalization. Overcoming this loss mechanism is critical, as hot-carrier-based energy conversion systems are predicted to exceed the conventional efficiency limit of ~33%. This project advanced fundamental understanding of hot-carrier energy conversion in two-dimensional (2D) semiconductors, with a focus on monolayer MoS 2 . Using a combination of electrochemical microscopy and in situ ultrafast spectroscopic measurements, this research directly demonstrated hot-carrier extraction from monolayer MoS 2 photoelectrodes in proof-of-concept liquid junction solar cells. These measurements established that hot-carrier transfer can compete with ultrafast carrier cooling at solid–liquid interfaces, providing unambiguous experimental evidence that hot-carrier extraction is feasible in atomically thin semiconductors under operating photoelectrochemical conditions. Beyond demonstration, the project identified design rules for tuning hot-carrier extraction rates relative to cooling rates in 2D semiconductor photoelectrodes. The outcomes of this research provide foundational thermodynamic and kinetic insights for the rational design of next-generation hot-carrier-enabled solar energy conversion systems. These findings have broad implications for photoelectrochemical solar fuels production, electrocatalysis, and emerging energy conversion architectures that seek to harness nonequilibrium charge carriers for enhanced efficiency.

14 SOLAR ENERGY↗
DOE OSTI2021

Carrier-Specific Hot Phonon Bottleneck in CH 3 NH 3 PbI 3 Revealed by Femtosecond XUV Absorption

Femtosecond carrier cooling in the organohalide perovskite semiconductor CH 3 NH 3 PbI 3 is measured using extreme ultraviolet (XUV) and optical transient absorption spectroscopy. XUV absorption between 44 and 58 eV measures transitions from the I 4d core to the valence and conduction bands and gives distinct signals for hole and electron dynamics. The core-to-valence-band signal directly maps the photoexcited hole distribution and provides a quantitative measurement of the hole temperature. The combination of XUV and optical probes reveals that upon excitation at 400 nm, the initial hole distribution is 3.5 times hotter than the electron distribution. At an initial carrier density of 1.4 × 10 20 cm –3 both carriers are subject to a hot phonon bottleneck, but at 4.2 × 10 19 cm –3 the holes cool to less than 1000 K within 400 fs. Finally, this result places significant constraints on the use of organohalide perovskites in hot-carrier photovoltaics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Pulsed studies of intervalley transfer in Al 0.35 In 0.65 As: A paradigm for valley photovoltaics

Al 0.35 In 0.65 As is a direct semiconductor whose multivalley conduction-band structure has been proposed for use in so-called valley photovoltaics. In such hot-carrier solar cells, energetic (hot) photocarriers are stored in satellite valleys away from the Γ point, allowing them to be extracted prior to thermalization and to thereby increase power-conversion efficiency. While prior theoretical work has highlighted the potential of Al 0.35 In 0.65 As—a widely used barrier material in electronic and optoelectronic devices, for use in valley photovoltaics—surprisingly little is known about its electrical properties, especially how these are impacted by the application of high fields. In this work, we therefore undertake a detailed characterization of the electrical properties of Te-doped ($\textit{n}$-type) Al 0.35 In 0.65 As, over wide ranges of temperature (3–400 K) and electric field (<50 kV/cm). Using pulsed measurements to suppress the influence of Joule heating, we reveal the presence of clear negative-differential conductance in the current-voltage characteristics of the films, suggestive of the intervalley transfer of hot electrons. This conclusion is supported by the results of ensemble Monte Carlo simulations of the hot-carrier action, which confirm the connection of the observed negative-differential conductance to hot-electron transfer from the conduction-band (Γ) minimum, to the side valleys at the $\textit{L}$ point. Further, the quantitative features of the experimentally determined velocity-field curves are found to be in good agreement with the results of these calculations, providing further confidence in the role of the implied intervalley transfer mechanism. Overall, these results confirm the excellent potential of Al 0.35 In 0.65 As for use as the absorber material in hot-carrier solar cell technology.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantization effects in semiconductor nanostructures and singlet fission in molecular chromophores for photovoltaics and solar fuels

Hot carriers in semiconductors are electrons and/or holes that have energies greater than carriers that reside at the top and bottom of the conduction and valence bands, respectively; the latter carriers are in equilibrium with the lattice and have a temperature equal to the lattice (ambient) temperature. Hot carriers are created in semiconductors upon the absorption of photons with energies greater than the bandgap. The excess energy above the bandgap energy is in the form of kinetic energy. The hot carriers can cool to the lattice temperature via electron–phonon scattering and establish separate Boltzmann distributions for electrons and holes at the band edges. Thus, upon cooling, the excess kinetic energy of the hot carriers is transformed into heat and is unavailable to be converted into electrical or chemical free energy in a solar photon-converting cell. This hot-carrier cooling process significantly limits the maximum possible power conversion efficiency (PCE) of the free energy of solar photons into electrical free energy or chemical free energy in chemical bonds of fuels. However, if hot-carrier cooling can be slowed such that the hot carriers can be extracted before cooling to create higher photovoltages, or utilized to create additional electron-hole pairs through carrier multiplication, then beneficial use can be made of the excess energy of hot carriers and the maximum thermodynamic PCE can be dramatically increased. Quantization effects in semiconductor nanostructures, unique properties of some bulk semiconductors, and exciton multiplication in both semiconductors and molecular chromophores that undergo singlet fission have shown a path forward for potential dramatic increases in the PCEs of solar photons into electricity and solar fuels. The status, history, and future promise of the science and technology of these future approaches for different types of photovoltaic cells and cells for solar fuels will be discussed.

14 SOLAR ENERGY↗