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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

2D material platform for overcoming the amplitude–phase tradeoff in ring resonators

Compact and high-speed electro-optic phase modulators play a vital role in various large-scale applications including optical computing, quantum and neural networks, and optical communication links. Conventional electro-refractive phase modulators such as silicon (Si), III-V and graphene on Si suffer from a fundamental tradeoff between device length and optical loss that limits their scaling capabilities. High-finesse ring resonators have been traditionally used as compact intensity modulators, but their use for phase modulation has been limited due to the high insertion loss associated with the phase shift. Here, we show that high-finesse resonators can achieve a strong phase shift with low insertion loss by simultaneous modulation of the real and imaginary parts of the refractive index, to the same extent, i.e., Δ n Δ k ∼1. To implement this strategy, we demonstrate an active hybrid platform that combines a low-loss SiN ring resonator with 2D materials such as graphene and transition metal dichalcogenide [tungsten disulphide (WSe 2 )], which induces a strong change in the imaginary and real parts of the index. Our platform consisting of a 25 µm long Gr-Al 2 O 3 -WSe 2 capacitor embedded on a SiN ring of 50 µm radius (∼8% ring coverage) achieves a continuous phase shift of (0.46±0.05) π radians with an insertion loss (IL) of 3.18±0.20 dB and a transmission modulation (Δ T Ring ) of 1.72±0.15dB at a probe wavelength ( λ p ) of 1646.18 nm. We find that our Gr-Al 2 O 3 -WSe 2 capacitor exhibits a phase modulation efficiency ( V π 2 ⋅ L ) of 0.530±0.016V⋅cm and can support an electro-optic bandwidth of 14.9±0.1GHz. We further show that our platform can achieve a phase shift of π radians with an IL of 5 dB and a minimum Δ T of 0.046 dB. We demonstrate the broadband nature of the binary phase response, by measuring a phase shift of (1.00±0.10) π radians, with an IL of 5.20±0.31dB and a minimal Δ T Ring of 0.015±0.006dB for resonances spanning from 1564 to 1650 nm. This SiN–2D hybrid platform provides the design for compact and high-speed reconfigurable circuits with graphene and transition metal dichalcogenide (TMD) monolayers that can enable large-scale photonic systems.

Datta, Ipshita (ORCID:0000000318842882)↗
NASA NTRS2005

A Ka-Band Wide-Bandgap Solid-State Power Amplifier: Architecture Performance Estimates

Motivated by recent advances in wide-bandgap (WBG) gallium nitride (GaN) semiconductor technology, there is considerable interest in developing efficient solidstate power amplifiers (SSPAs) as an alternative to the traveling-wave tube amplifier (TWTA) for space applications. This article documents the results of a study to investigate power-combining technology and SSPA architectures that can enable a 120-W, 40 percent power-added efficiency (PAE) SSPA. Results of the study indicate that architectures based on at least three power combiner designs are likely to enable the target SSPA. The proposed architectures can power combine 16 to 32 individual monolithic microwave integrated circuits (MMICs) with >80 percent combining efficiency. This corresponds to MMIC requirements of 5- to 10-W output power and >48 percent PAE. For the three proposed architectures [1], detailed analysis and design of the power combiner are presented. The first architecture studied is based on a 16-way septum combiner that offers low loss and high isolation over the design band of 31 to 36 GHz. Analysis of a 2-way prototype septum combiner had an input match >25 dB, output match >30 dB, insertion loss <0.02 dB, and isolation >30 dB over the design band. A 16-way design, based on cascading this combiner in a binary fashion, is documented. The second architecture is based on a 24-way waveguide radial combiner. A prototype 24-way radial base was analyzed to have an input match >30 dB (under equal excitation of all input ports). The match of the mode transducer that forms the output of a radial combiner was found to be >27 dB. The functional bandwidth of the radial base and mode transducer, which together will form a radial combiner/divider, exceeded the design band. The third architecture employs a 32-way, parallel-plate radial combiner. Simulation results indicated an input match >24 dB, output match >22 dB, insertion loss <0.23 dB, and adjacent port isolation >20 dB over the design band. All three architectures utilize a low-loss MMIC amplifier module based on commercial MMIC packaging and a custom microstrip-to-rectangular-waveguide transition. The insertion loss of the module is expected to be 0.45 dB over the design band.

Epp, L.↗
NASA NTRS2011

Broadband Via-Less Microwave Crossover Using Microstrip-CPW Transitions

The front-to-back interface between microstrip and CPW (coplanar waveguide) typically requires complex fabrication or has high radiation loss. The microwave crossover typically requires a complex fabrication step. The prior art in microstrip-CPW transition requires a physical vias connection between the microstrip and CPW line on a separate layer. The via-less version of this transition was designed empirically and does not have a close form solution. The prior art of the micro wave crossover requires either additional substrate or wire bond as an air bridge to isolate two microwave lines at the crossing junction. The disadvantages are high radiation loss, no analytical solution to the problem, lengthy simulation time, and complex fabrication procedures to generate air bridges or via. The disadvantage of the prior crossover is a complex fabrication procedure, which also affects the device reliability and yield. This microstrip-CPW transition is visualized as two microstrip-slotline transitions combined in a way that the radiation from two slotlines cancels each other out. The invention is designed based on analytical methods; thus, it significantly reduces the development time. The crossover requires no extra layer to cross two microwave signals and has low radiation loss. The invention is simple to fabricate and design. It produces low radiation loss and can be designed with low insertion loss, with some tradeoff with signal isolation. The microstrip-CPW transition is used as an interface to connect between the device and the circuit outside the package. The via-less microwave crossover is used to allow two signals to cross without using an extra layer or fabrication processing step to enable this function. This design allows the solution to be determined entirely though analytical techniques. In addition, a planar via-less microwave crossover using this technique was proposed. The experimental results show that the proposed crossover at 5 GHz has a minimum isolation of 32 dB. It also has low in-band insertion loss and return loss of 1.2 dB and 18 dB, respectively, over more than 44 percent of bandwidth at room temperature. This microstrip-CPW transition requires the microstrip line to be split into two sections. Each section is connected to a microstrip quarter-wavelength openended stub. A slotline is also placed perpendicular to the microstrip section. The slot is connected to a grounded-end quarter-wavelength slotline and generates a microstrip-slotline transition. When two of these sections are placed in parallel and with the microstrip section combined at transition, a microstrip- CPW transition is formed. The slotline radiation is suppressed as two slots are excited with the electric field in an opposite direction, which cancels the radiation in far field. The invention on the crossover consists of the invented microstrip-CPW transitions combined back-to-back and a microstrip low-pass filter. One signal is crossed through to the microstrip layer, while the other signal is crossed through the CPW line located on the ground plane of the microstrip line. The microstrip low-pass filter produces a narrow line at the crossing point to enhance the system isolation. It also produces broadband response in the operating frequency band. The microstrip-CPW transition allows a microwave signal to travel from microstrip line to CPW line with low radiation loss. The crossover allows two microwave signals to cross with minimal parasitic coupling.

Stevenson, Thomas↗
NASA NTRS1996

YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates

Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.

Sabataitis, J. C.↗
NASA NTRS1976

Diffraction of sound by nearly rigid barriers

The diffraction of sound by barriers with surfaces of large, but finite, acoustic impedance was analyzed. Idealized source-barrier-receiver configurations in which the barriers may be considered as semi-infinite wedges are discussed. Particular attention is given to situations in which the source and receiver are at large distances from the tip of the wedge. The expression for the acoustic pressure in this limiting case is compared with the results of Pierce's analysis of diffraction by a rigid wedge. An expression for the insertion loss of a finite impedance barrier is compared with insertion loss formulas which are used extensively in selecting or designing barriers for noise control.

Hadden, W. J., Jr.↗
NASA NTRS2000

Correlation of Electric Field and Critical Design Parameters for Ferroelectric Tunable Microwave Filters

The correlation of electric field and critical design parameters such as the insertion loss, frequency ability return loss, and bandwidth of conductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work. This work is based primarily on barium strontium titanate (BSTO) ferroelectric thin film based tunable microstrip filters for room temperature applications. Two new parameters which we believe will simplify the evaluation of ferroelectric thin films for tunable microwave filters, are defined. The first of these, called the sensitivity parameter, is defined as the incremental change in center frequency with incremental change in maximum applied electric field (EPEAK) in the filter. The other, the loss parameter, is defined as the incremental or decremental change in insertion loss of the filter with incremental change in maximum applied electric field. At room temperature, the Au/BSTO/LAO microstrip filters exhibited a sensitivity parameter value between 15 and 5 MHz/cm/kV. The loss parameter varied for different bias configurations used for electrically tuning the filter. The loss parameter varied from 0.05 to 0.01 dB/cm/kV at room temperature.

Subramanyam, Guru↗
NASA NTRS1983

30/20 GHz spacecraft GaAs FET solid state transmitter for trunking and customer-premise-service application

Sixteen 30 dB 0.5 W amplifier modules were combined to satisfy the requirement for a graceful degradation. If one module fails, the output power drops by only 0.43 dB. Also, by incorporating all the gain stages within the combiner the overall combining efficiency is maximized. A 16 way waveguide divider combiner was developed to minimize the insertion loss associated with such a large corporate feed structure. Tests showed that the 16 way insertion loss was less than 0.5 dB. To minimize loss, a direct transition from waveguide to microstrip, using a finline on duroid substrate, was developed. The FETs fabricated on MBE grown material, demonstrated superior performances. For example, a 600 micrometer device was capable of 320 mW output power with 5 dB gain and 26.6% efficiency at 21 GHz. The 16 module amplifier gave 8.95 W saturated output power with 30 dB gain. The overall efficiency was 9%. The 3 dB bandwidth was 2.5 GHz. At 17.7 GHz the amplifier had 5 W output power and at 20.2 GHz it still had 4.4 W.

Saunier, P.↗
NASA NTRS1984

Experimental study of noise transmission into a general aviation aircraft

The effect of add-on treatments on noise transmission into a cabin of a light aircraft was studied under laboratory conditions for diffuse and localized noise inputs. Results indicate that stiffening skin panels with honeycomb would provide on the average 3dB to 7 dB insertion loss over the most of selected frequency range H1 to 1000 Hz. Addition of damping tape on top of the honeycomb treatment increases insertion loss by 2dB to 3dB. Porous acoustic blankets show no attenuation of transmitted noise for frequencies below 300 Hz. Insertion of impervious vinyl septa between the layers of porous acoustic blankets do not provide additional noise reduction for frequencies up to about 500 Hz. Similar behavior was observed for noise barriers composed of urethane elastomer, decoupler foam and acoustic foam. A treatment composed from several layers of acoustic foams does not increase noise attenuation for the entire frequency range studied. An acoustic treatment composed of honeycomb panels, constrained layer damping tape, 2 to 3 inches of porous acoustic blankets, and limptrim which is isolated from the vibrations of the main fuselage structure seems to provide the best option for noise control.

Vaicaitis, R.↗
NASA NTRS1984

Superconducting Nbti and Pb(cu) Bandpass Filters

Superconducting Nb0.45Ti0.55 and Pb electroplated on Cu bandpass microwave filtes were constructed to investigate their low loss properties at 4.7 K. An interdigital stripline filter configuration was selected as the optimum structure for future applications. The filter was designed to operate at 8.45 GHz with an equal ripple bandwidth of 0.15 GHz. The insertion loss and the noise temperature contribution were measured at 4.7 K. In addition, the insertion loss was studied as a function of out of band power (up to 1 watt) and temperature (4.7 K up to T(c)). Results of an oxygen free high conductivity Cu filter are included for comparison.

Bautista, J. J.↗
NASA NTRS1985

Superconducting NbTi and Pb(Cu) bandpass filters

Superconducting NbO.45Ti0.55 and Pb electroplated on Cu bandpass microwave filters were constructed to investigate their low loss properties at 4.7 K. An interdigital stripline filter configuration was selected as the optimum structure for future applications. The filter was designed to operate at 8.45 GHz with an equal ripple bandwidth of 0.15 GHz. The insertion loss and the noise temperature contribution were measured at 4.7 K. In addition, the insertion loss was studied as a function of out of band power (up to 1 watt) and temperature (4.7 K up to Tc). Results of an oxygen free high conductivity Cu filter are included for comparison.

Bautista, J. J.↗
NASA NTRS1983

A Ka-band GaAs monolithic phase shifter

The design and performance of a GaAs monolithic 180-degree one-bit switched line phase shifter test circuit for Ka-band operation is presented. A self-aligned gate (SAG) fabrication technique is also described that reduces resistive parasitics in the switching FET's. Over the 27.5-30 GHz band, typical measured differential insertion phase is within 10-20 deg of the ideal time delay characteristic. Over the same band, the insertion loss for the SAG phase shifter is about 2.5-3 dB per bit. The SAG fabrication technique holds promise in reducing phase shifter insertion loss to about 1.5 dB/bit for 30-GHz operation.

Sokolov, V.↗
NASA NTRS1991

Applications of a high power four-way power divider and combiner and a cross-over circuit

Circuits of rectangular waveguides coupled to a cylindrical cavity have been studied. Two types of circuits were developed: a high-power four-way power divider/combiner with less than 0.5 dB insertion loss over a 20 percent bandwidth and a high-power four-port cross-over circuit with less than 0.7 dB insertion loss and 20 dB isolation at X-band. To demonstrate the feasibility of the first circuit, a power combiner was built by connecting four Gunn oscillators to the four rectangular waveguide ports of the radial waveguide. A power combining efficiency of over 70 percent was achieved at X-band. The second circuit was used to feed a dual-polarization cross-slot antenna backed by a cylindrical cavity.

Chang, Kai↗
NASA NTRS1991

Performance of a high Tc superconducting ultralow-loss microwave stripline filter

The successful fabrication is reported of a five-pole interdigital stripline filter made of the 93 K superconductor Y1Ba2Cu3O(y) coated on a silver substrate, with a center frequency of 8.5 GHz and an extremely high rejection ratio of 80 dB. The lowest insertion loss measured was 0.1 dB at 12 K, with a return loss better than 16 dB, representing significant improvements over a similar Cu filter, and comparable to low Tc filters. The insertion loss appears to be limited by extrinsic factors such as tuning mismatch and joint losses, and not by the superconducting material losses.

Zahopoulos, C.↗
NASA NTRS2010

Nanoionics-Based Switches for Radio-Frequency Applications

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Nessel, James↗
NASA NTRS1991

Performance of a high T(sub c) superconducting ultra-low loss microwave stripline filter

Discussed here is the successful fabrication of a five-pole interdigital stripline filter made of the 93-K superconductor (Y1Ba2Cu3O(y)) coated on a silver substrate, with center frequency of 8.5 GHz and an extremely high rejection ratio of 80 dB. The lowest insertion loss measured was 0.1 dB at 12 K, with a return loss of better than 16 dB, representing a significant improvement over a similar copper filter; it is comparable to low critical temperature filters. The insertion loss appears to be limited by extrinsic factors, such as tuning mismatch and joint losses, and not by the superconducting material losses.

Bautista, J. J.↗
NASA NTRS1988

Dual passband dichroic plate for X-band

A need arose in the Deep Space Network for a dichroic plate that would simultaneously pass two desired frequency bands in the X-band region. In addition, the plate must be totally reflective for S-band frequencies. A dielectrically loaded dichroic plate is described that was developed to meet this need. The unique microwave properties that the new dichroic plate had to possess were: (1) insertion losses of less than 0.04 dB for X-band uplink frequencies centered at 7167 MHz and for X-band downlink frequencies centered at about 8425 MHz; (2) insertion losses that met the low loss requirements at 30 deg incidence angle simultaneously for both parallel and perpendicular polarizations; (3) total reflectivity at S-band frequencies; and (4) ability to maintain these electrical characteristics while passing 100 kW of CW power at X-band or while reflecting 100 kW of CW power at S-band. The dual passband dichroic plate is a thick metallic plate having an array of periodic round holes filled with Teflon plugs. Test results on an experimental prototype plate indicate that it is technically possible to design a dielectrically filled dichroic plate that meets all of the technical requirements.

Otoshi, T. Y.↗
NASA NTRS2000

Sound Absorption of a 2DOF Resonant Liner with Negative Bias Flow

This report describes an experimental study conducted to determine the effect of negative bias flow on the sound absorption of a two degree-of-freedom liner. The backwall for the liner was designed to act as a double-Helmholtz resonator so as to act as a hard wall at all frequencies except at its resonant frequencies. All normal incident impedance data presented herein was acquired in an impedance tube. The effect of bias flow is investigated for a buried septum porosity of 2% and 19.5% for bias flow orifice mach numbers up to 03 11. As a porous backwall is needed for the flow to pass through, the effect of bias flow on this backwall all had to be evaluated first. The bias flow appears to modify the resistance and reactance of the backwall alone at lower frequencies up to about 2 kHz, with marginal effects at higher frequencies. Absorption coefficients close to unity are achieved for a frequency range of 500-4000 Hz for the overall liner for a septum porosity of 2% and orifice mach number of 0.128. Insertion loss tests performed in a flow duct facility for grazing flow Mach numbers up to 0.2 and septum mach numbers up to 0.15 showed that negative bias flow can increase insertion loss by as much as 10 dB at frequencies in the range of 500 - 1400 Hz compared to no grazing flow. The effectiveness of the negative bias flow is diminished as the grazing flow velocity is increased.

Ahuja, K. K.↗