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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Magnetic tunnel junctions with voltage tunable interlayer coupling for memory and sensor applications

Various examples are provided for magnetic tunnel junctions and applications thereof. In one example, a magnetic tunnel junction (MTJ) device includes a first ferromagnetic (FM) layer; a gadolinium oxide (GdOX) tunnel barrier disposed on the first ferromagnetic layer; and a second FM layer disposed on the GdOX tunnel barrier. In another example, a perpendicular MTJ (pMTJ) device includes a first layer including a magnetic material; a tunnel barrier disposed on the first layer to form the pMTJ; and a second layer including the magnetic material, the second layer disposed on the tunnel barrier.

Wang, Weigang↗
DOE OSTI2022

Breaking of Inversion Symmetry and Interlayer Electronic Coupling in Bilayer Graphene Heterostructure by Structural Implementation of High Electric Displacement Fields

Controlling the interlayer coupling in two-dimensional (2D) materials generates novel electronic and topological phases. Its effective implementation is commonly done with a transverse electric field. However, phases generated by high displacement fields are elusive in this standard approach. Here, we introduce an exceptionally large displacement field by structural modification of a model system: AB-stacked bilayer graphene (BLG) on a SiC(0001) surface. We show that upon intercalation of gadolinium, electronic states in the top graphene layers exhibit a significant difference in the on-site potential energy, which effectively breaks the interlayer coupling between them. As a result, for energies close to the corresponding Dirac points, the BLG system behaves like two electronically isolated single graphene layers. This is proven by local scanning tunneling microscopy (STM)/spectroscopy, corroborated by density functional theory, tight binding, and multiprobe STM transport. Further, the work presents metal intercalation as a promising approach for the synthesis of 2D graphene heterostructures with electronic phases generated by giant displacement fields.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies

Interlayer exchange coupling between layers with perpendicular and easy-plane magnetic anisotropies separated by a non-magnetic spacer is studied using ferromagnetic resonance. The samples consist of a Co/Ni multilayer with perpendicular magnetic anisotropy and a CoFeB layer with easy-plane anisotropy separated by a variable thickness Ru layer. At a fixed frequency, we show that there is an avoided crossing of layer ferromagnetic resonance modes providing direct evidence for interlayer coupling. The mode dispersions for different Ru thicknesses are fit to a Heisenberg-type model to determine the interlayer exchange coupling strength and layer properties. The resulting interlayer exchange coupling varies continuously from antiferromagnetic to ferromagnetic as a function of the Ru interlayer thickness. These results show that the magnetic layer single domain ground state consists of magnetizations that can be significantly canted with respect to the layer planes and the canting can be tuned by varying the Ru thickness and the layer magnetic characteristics, a capability of interest for applications in spin-transfer torque devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Modulation of interlayer exchange coupling strength in magnetic tunnel junctions via strain effect

Interlayer exchange coupling of two ferromagnetic electrodes separated by a thin MgO tunnel barrier is investigated using magneto-optical Kerr effect. We find that the coupling field can be reduced by more than 40% as the thickness of a top Ta capping layer increases from 0.5 to 1.2 nm. In contrast, a similar film stack with an additional 3 nm Ru capping layer displays no such dependence on Ta thickness. Transmission electron microscopy study shows that the oxidation of the exposed Ta capping layer induces changes in the crystalline structures of the underlying films, giving rise to the observed reduction of the interlayer coupling field.

36 MATERIALS SCIENCE↗
NASA NTRS2003

Antiferromagnetic Interlayer Exchange Coupling in All-Semiconducting EuS/PbS/EuS Trilayers

A comprehensive experimental study on the antiferromagnetic interlayer exchange coupling in high quality epitaxial all-semiconducting EuSPbSEuS trilayers is reported. The influence of substrates, the thickness of the non-magnetic PbS spacer layer, and of temperature, was investigated by means of SQUID magnetometry. In trilayers with a PbS thickness between 4 and 12 deg A the low temperature hysteresis loops showed the signature of antiferromagnetic coupling. The value of the interlayer exchange coupling energy was determined by simulating the data with a modified Stoner model, including Zeeman, anisotropy, and exchange coupling energies. An important observation was of a strong dependence of the interlayer exchange coupling energy on temperature, consistent with a power law dependence of the exchange coupling constant on the saturation magnetization of the EuS layers. While no theoretical description is readily available, we conjecture that the observed behavior is due to a dependence of the interlayer exchange coupling energy on the exchange splitting of the EuS conduction band.

Smits, C. J. P.↗
DOE OSTI2016

Restoring interlayer Josephson coupling in La 1.885 Ba 0.115 CuO 4 by charge transfer melting of stripe order

Here, we show that disruption of charge-density-wave (stripe) order by charge transfer excitation, enhances the superconducting phase rigidity in La 1.885 Ba 0.115 CuO 4 . Time-resolved resonant soft x-ray diffraction demonstrates that charge order melting is prompt following near-infrared photoexcitation whereas the crystal structure remains intact for moderate fluences. THz time-domain spectroscopy reveals that, for the first 2 ps following photoexcitation, a new Josephson plasma resonance edge, at higher frequency with respect to the equilibrium edge, is induced indicating enhanced superconducting interlayer coupling. Furthermore, the fluence dependence of the charge-order melting and the enhanced superconducting interlayer coupling are correlated with a saturation limit of ~0.5mJ/cm 2 . When using a combination of x-ray and optical spectroscopies we establish a hierarchy of timescales between enhanced superconductivity, melting of charge order, and rearrangement of the crystal structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of interlayer exchange coupling on magnetic chiral structures

We numerically investigated the effect of interlayer exchange coupling on magnetic chiral structures, such as a helical/cycloidal spin structure and magnetic skyrmion crystal (SkX), which are produced in a magnetic system involving the Dzyaloshinskii-Moriya interaction (DMI). We report the existence of a phase transition where the length scale of magnetic structure discontinuously changes, and that there can be a novel magnetic structure around the phase boundary that exhibits double-ordering lengths of magnetic structure. Therefore, the system has multiple ground phases determined by the ratio of interlayer exchange coupling strength and DMI strength. Furthermore, we investigated the critical condition of the external perpendicular field required for the SkX. The critical field is significantly reduced under the effect of interlayer exchange coupling, which can stabilize the SkX without the external field.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Self-Intercalation Tunable Interlayer Exchange Coupling in a Synthetic van der Waals Antiferromagnet

One of the most promising avenues in 2D materials research is the synthesis of antiferromagnets employing 2D van der Waals (vdW) magnets. However, it has proven challenging, due in part to the complicated fabrication process and undesired adsorbates as well as the significantly deteriorated ferromagnetism at atomic layers. Here, the engineering of the antiferromagnetic (AFM) interlayer exchange coupling between atomically thin yet ferromagnetic CrTe 2 layers in an ultra-high vacuum-free 2D magnetic crystal, Cr 5 Te 8 is reported. By self-introducing interstitial Cr atoms in the vdW gaps, the emergent AFM ordering and the resultant giant magnetoresistance effect are induced. A large negative magnetoresistance (10%) with a plateau-like feature is revealed, which is consistent with the AFM interlayer coupling between the adjacent CrTe 2 main layers in a temperature window of 30 K below the Néel temperature. Notably, the AFM state has a relatively weak interlayer exchange coupling, allowing a switching between the interlayer AFM and ferromagnetic states at moderate magnetic fields. Here this work represents a new route to engineering low-power devices that underpin the emerging spintronic technologies, and an ideal laboratory to study 2D magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Two-Dimensional J eff = 1 / 2 Antiferromagnetic Insulator Unraveled from Interlayer Exchange Coupling in Artificial Perovskite Iridate Superlattices

We report an experimental investigation of the two-dimensional J eff =1/2 antiferromagnetic Mott insulator by varying the interlayer exchange coupling in [(SrIrO 3 ) 1 , (SrTiO 3 ) m ] (m=1, 2 and 3) superlattices. Although all samples exhibited an insulating ground state with long-range magnetic order, temperature-dependent resistivity measurements showed a stronger insulating behavior in the m = 2 and m = 3 samples than the m = 1 sample which displayed a clear kink at the magnetic transition. This difference indicates that the blocking effect of the excessive SrTiO 3 layer enhances the effective electron-electron correlation and strengthens the Mott phase. The significant reduction of the Néel temperature from 150 K for m = 1 to 40 K for m = 2 demonstrates that the long-range order stability in the former is boosted by a substantial interlayer exchange coupling. Resonant x-ray magnetic scattering revealed that the interlayer exchange coupling has a switchable sign, depending on the SrTiO 3 layer number m, for maintaining canting-induced weak ferromagnetism. In conclusion, the nearly unaltered transition temperature between the m = 2 and the m = 3 demonstrated that we have realized a two-dimensional antiferromagnet at finite temperatures with diminishing interlayer exchange coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Carrier dynamics and spin–valley–layer effects in bilayer transition metal dichalcogenides

Transition metal dichalcogenides are an interesting class of low dimensional materials in mono- and few-layer form with diverse applications in valleytronic, optoelectronic and quantum devices. Therefore, the general nature of the band-edges and the interplay with valley dynamics is important from a fundamental and technological standpoint. Bilayers introduce interlayer coupling effects which can have a significant impact on the valley polarization. The combined effect of spin–orbit and interlayer coupling can strongly modify the band structure, phonon interactions and overall carrier dynamics in the material. In this paper we use first-principles calculations of electron–electron and electron–phonon interactions to investigate bilayer MoS 2 and WSe 2 in both the AA' and AB stacking configurations. We find that in addition to spin–orbit coupling, interlayer interactions present in the two configurations significantly alter the near-band-edge dynamics. Scattering lifetimes and dynamic behavior are highly material-dependent, despite the similarities and typical trends in TMDCs. Additionally, we capture significant differences in dynamics for the AA' and AB stacking configurations, with lifetime values differing by up to an order of magnitude between them for MoS 2 . Further, we evaluate the valley polarization times and find that maximum lifetimes at room temperature are of the scale of 1 picosecond for WSe 2 in the AB orientation. These results present a pathway to understanding complex heterostructure configurations and ‘magic angle’ physics in TMDCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Interlayer magnetophononic coupling in MnBi2Te4

Abstract The emergence of magnetism in quantum materials creates a platform to realize spin-based applications in spintronics, magnetic memory, and quantum information science. A key to unlocking new functionalities in these materials is the discovery of tunable coupling between spins and other microscopic degrees of freedom. We present evidence for interlayer magnetophononic coupling in the layered magnetic topological insulator MnBi 2 Te 4 . Employing magneto-Raman spectroscopy, we observe anomalies in phonon scattering intensities across magnetic field-driven phase transitions, despite the absence of discernible static structural changes. This behavior is a consequence of a magnetophononic wave-mixing process that allows for the excitation of zone-boundary phonons that are otherwise ‘forbidden’ by momentum conservation. Our microscopic model based on density functional theory calculations reveals that this phenomenon can be attributed to phonons modulating the interlayer exchange coupling. Moreover, signatures of magnetophononic coupling are also observed in the time domain through the ultrafast excitation and detection of coherent phonons across magnetic transitions. In light of the intimate connection between magnetism and topology in MnBi 2 Te 4 , the magnetophononic coupling represents an important step towards coherent on-demand manipulation of magnetic topological phases.

36 MATERIALS SCIENCE↗