Towards Normal Incidence Intersubband Infrared Detection
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intersubband infrared photodetector QWIP↗
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Very Long Wavelength Intersubband Infrared Hot Electron Transistor
We have demonstrated the first very long wavelength (16 micrometers) infrared hot electron transistor (IHET). This device utilizes a bound to continuum GaAs/A1_xGa_(1- x)As (X=0.11) quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick A1_xGa_(1-x)As (X=0.11) barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.
quantum↗
Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.
Gunapala, Sarath D.↗
Wavelength-insensitive radiation coupling for multi-quantum well sensor based on intersubband absorption
Devices and techniques for coupling radiation to intraband quantum-well semiconductor sensors that are insensitive to the wavelength of the coupled radiation. At least one reflective surface is implemented in the quantum-well region to direct incident radiation towards the quantum-well layers.
Gunapala, Sarath D.↗
Very Long Wavelength Intersubband Infrared Hot Electron Transistor
We have demonstrated the first very long wavelength (16 micrometer) infrared hot electron transistor (IHET). This device utilizes a bound to continuum quantum well infrared photodetector (QWIP) as a photosensitive emitter, a wide quantum well as a base, and a thick Al_xGa_(1-x)As barrier between the base and the collector as an energy discriminating filter. This energy filter blocks the lower energy electrons, which drain through the base while higher energy photo electrons pass to the collector. Therefore, the detectivity of the device at the collector is much higher than the detectivity at the emitter.
Park, J.S.↗
THz time-domain characterization of amplifying quantum-cascade metasurface
An amplifying quantum-cascade (QC) metasurface, the key component of the QC vertical-external-cavity surface-emitting-laser (VECSEL), is studied as a function of injected current density using reflection-mode terahertz time domain spectroscopy. Nearly perfect absorption is measured at zero bias, which is associated with the transition from the weak to strong coupling condition between the metasurface resonance and an intersubband transition within the QC material. An increase in reflectance is observed as the device is biased, both due to reduction in intersubband loss and the presence of intersubband gain. Significant phase modulation associated with the metasurface resonance is observed via electrical control, which may be useful for electrical tuning of QC-VECSEL. These results provide insight into the interaction between the intersubband QC-gain material and the metasurface and modify the design rules for QC-VECSELs for both biased and unbiased regions.
42 ENGINEERING↗
Near-field probing of strong light-matter coupling in single IR antennae
Quantum well intersubband polaritons are traditionally studied in large scale ensembles, over many wavelengths in size.In this presentation, we demonstrate that it is possible to detect and investigate intersubband polaritons in a single sub-wavelength nanoantenna in the IR frequency range. We observe polariton formation using a scattering-type near-fieldmicroscope and nano-FTIR spectroscopy. In this work, we will discuss near-field spectroscopic signatures of plasmonic antennae withand without coupling to the intersubband transition in quantum wells located underneath the antenna. Evanescent fieldamplitude spectra recorded on the antenna surface show a mode anti-crossing behavior in the strong coupling case. Wealso observe a corresponding strong-coupling signature in the phase of the detected field. We anticipate that this near-fieldapproach will enable explorations of strong and ultrastrong light-matter coupling in the single nanoantenna regime,including investigations of the elusive effect of ISB polariton condensation.
36 MATERIALS SCIENCE↗
Delay-resolved spectroscopy in terahertz photonic circuits
Photonic integrated circuits incorporating intersubband transitions are ideal for mid-infrared and terahertz nanophotonics. However, the design of epitaxies has long been inhibited by two factors: the modest predictivity of ab initio theory and the absence of absolute intersubband gain and loss measurements under operating conditions. Existing measurements either yield inaccurate gain profiles or do not accurately assess dependence on frequency, bias, and temperature. Here, we present a delay-resolved absolute-referencing method for accurate gain evaluation without these limitations, addressing a long-standing challenge. By creating a photonic circuit that allows broadband pulses to traverse different lengths of a gain medium, we measure the absolute transmission of intersubband structures. Gain profiles match theoretical predictions at lower temperatures, with gain and dispersion clamping after lasing, and faster-than-expected degradation occurs at higher temperatures. Our approach provides a precise experimental evaluation of temperature-dependent gain performance and gives insight into optimizing temperature performance and frequency comb designs.
Optical spectroscopy↗
Advantages of an indirect semiconductor quantum well system for infrared detection
The infrared intersubband absorption process in quantum well systems with anisotropic bulk effective masses, which usually occurs in indirect semiconductors was analyzed. It is found that the anisotropic effective mass can be utilized to provide allowed intersubband transitions at normal incidence to the quantum well growth direction. This transition is known to be forbidden for cases of isotropic effective mass. This property can be exploited for infrared sensor application of quantum well structures by allowing direct illumination of large surface areas without using special waveguide structures. The 10-micron intersubband absorption in quantum wells made of the silicon-based system Si/Si(1-x)Ge(x) was calculated. It is found that it is readily possible to achieve an absorption constant of the order of 10,000/cm in these Si quantum wells with current doping technology.
Yang, Chan-Lon↗
Tip‐Enhanced Imaging and Control of Infrared Strong Light‐Matter Interaction
Optical antenna resonators enable control of light‐matter interactions on the nano‐scale via electron–photon hybrid states in strong coupling. Specifically, mid‐infrared (MIR) nano‐antennas coupled to saturable intersubband transitions in multi‐quantum‐well (MQW) semiconductor heterostructures allow for the coupling strength to be tuned through antenna resonance and field intensity. Here, in this study, tip‐enhanced nano‐scale variation of antenna‐MQW coupling across the antenna is demonstrated, with a spatially‐dependent coupling strength $g_{\textrm{aq}}$ varying from 73 (strong coupling) to 24 cm -1 (weak coupling). This behavior is modeled based on the spatially dependent local constructive and destructive interference between tip and antenna fields. Using a quantum‐mechanical density‐matrix model of the MQW system with its designed values of transition dipole moment, doping density, and population decay time, the picosecond IR pulse coupling to intersubband transitions and the associated tip induced strong‐field saturation effects are described. These results present a new regime of nonlinear IR light‐matter control based on the dynamic manipulation of quantum hybrid states on the nanoscale and in the infrared, with a perspective regarding extension to molecular vibrations.
Wang, Yueying↗
Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures
Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.
Hauenstein, Robert J.↗
Optical Coupling Mechnisms in Quantum Well Infrared Photodetectors
Light coupling systems, such as gratings are required becuase Quantum Well Infrared Photodetectors do not respond to normal incident light due to the quantum mechanical selection rules associated with intersubband transitions. The resolution of the photolithography and acuracy of the etching beomce key issues in producing smaller rating feature sizes expecially in shorter wavelengths.
Quantum Wells Intersubband infrared detectors grat↗
Two dimensional Periodic Grating Light Coupling in Quantum Well Infrared Photodetectors
Quantum Well Infrared Photodetectors do not respond to normal incident light due to the Quantum mechanical selection rules associated with intersubband transitions.
Photodetectors↗
Strong Coupling in Semiconductor Hyperbolic Metamaterials
Semiconductor-based layered hyperbolic metamaterials (HMMs) house high-wavevector volume plasmon polariton (VPP) modes in the infrared spectral range. VPP modes have successfully been exploited in the weak-coupling regime through the enhanced Purcell effect. In this paper, we experimentally demonstrate strong coupling between the VPP modes in a semiconductor HMM and the intersubband transition of epitaxially embedded quantum wells. We observe clear anticrossings in the dispersion curves for the zeroth-, first-, second-, and third-order VPP modes, resulting in upper and lower polariton branches for each mode. This demonstration sets the stage for the creation of novel infrared optoelectronic structures combining HMMs with embedded epitaxial emitter or detector structures.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Near-Infrared Optical Gain of Colloidal Quantum Wells via Intraband Transitions
Tunable, unipolar, near-infrared intraband optical gain is demonstrated in semiconductor colloidal quantum wells, expanding the form and optical range for potential infrared applications. Atomically flat colloidal quantum wells of cadmium selenide display photoinduced absorption features in the near-infrared assigned to intraband (alternatively intersubband) transitions from the first to second electron subbands of the quantum wells. Under ultraviolet optical excitation, these same transitions from the first to second electron subbands are shown to exhibit stimulated emission, resulting in optical gain covering the near-infrared spectral region. The modal gain, bandwidth, and lifetime of this intraband gain are manipulated by using excitation energy, fluence, temperature, and surface chemistry. Unlike previous demonstrations of intraband optical gain in epitaxial quantum wells (e.g., quantum cascade lasers), the colloidal quantum wells are undoped. As a result, nearly thresholdless gain is in principle possible and limited in practice by the measurement of small optical losses of the samples in the near-infrared. Furthermore, the observations may be understood as a modified "quantum fountain" employing the valence band, a strategy that may be applied to many other materials.
Optical gain↗
Colloidal quantum wells for optoelectronic devices
Colloidal quantum wells, also called nanoplatelets, are nanoscopic materials displaying quantum confinement in two dimensions. Unlike colloidal quantum dots, colloidal quantum well ensembles have no inhomogeneous broadening due to an atomically-precise definition of the short axis, a fact which results in much narrower ensemble absorption and emission. Thus, colloidal quantum wells can translate many advantages of colloidal nanocrsytals or other solution-processable materials, such as scalable synthesis and substrate-agnostic deposition (particularly compared to epitaxial quantum wells), without sacrificing material uniformity. Furthermore, due to very narrow photoluminescnece peaks, these materials have found a home in applications involving light emission, such as downconversion enhancement films, light-emitting diodes, and lasers, in which they represent some of the best performers among solution-cast materials. As argued in this review, the full spectrum of epitaxial quantum well devices offers a roadmap to other potential applications, such as detection, electronics, electro-optics, non-linear optics, or intersubband devices, in which only nascent efforts have been made.
36 MATERIALS SCIENCE↗
Transient reshaping of intraband transitions by hot electrons
Hot electrons, far above the lattice temperature of a material, present opportunities for enhanced solar energy harvesting or performance of otherwise unfavorable chemistry. The spectroscopic signatures and dynamics of hot carrier absorption and emission have been extensively studied in bulk and nanoscopic semiconductors, but the effects on intraband transitions are largely unexplored. In this work, the effect of hot electrons on the properties of colloidal quantum wells made of cadmium selenide is examined using ultrafast spectroscopy. Similar to expitaxial quantum wells, these atomically precise materials support intersubband transitions (a class of intraband transitions in 1D and 2D materials) in the near-infrared spectral window. Using energy-dependent photoexcitation, it is shown that electrons reach effective temperatures of 2000 K or greater. This results in a substantial transient shift in the oscillator strength of the instersubband transition to lower energies on a sub-picosecond time-scale. Similar heating of electrons is achieved under mid-infrared re-excitation, which permits ultrafast transmittance modulation throughout the near-infrared.
77 NANOSCIENCE AND NANOTECHNOLOGY↗
Elimination of remnant phases in low-temperature growth of wurtzite ScAlN by molecular-beam epitaxy
We report growth of wurtzite Sc x Al 1-x N (x < 0.23) by plasma-assisted molecular-beam epitaxy on c-plane GaN at high temperatures significantly alters the extracted lattice constants of the material due to defects likely associated with remnant phases. In contrast, ScAlN grown below a composition-dependent threshold temperature exhibits uniform alloy distribution, reduced defect density, and atomic-step surface morphology. The c-plane lattice constant of this low-temperature ScAlN varies with composition as expected from previous theoretical calculations and can be used to reliably estimate alloy composition. Moreover, lattice-matched Sc 0.18 Al0 .82 N/GaN multi-quantum wells grown under these conditions display strong and narrow near-infrared intersubband absorption lines that confirm advantageous optical and electronic properties.
36 MATERIALS SCIENCE↗