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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

A feasible path for the use of ferromagnetic josephson junctions in quantum circuits: The ferro-transmon

We discuss the capabilities of ferromagnetic (F) Josephson junctions (JJs) in a variety of layouts and configurations. The main goal is to demonstrate the potential of these hybrid JJs to disclose new physics and the possibility to integrate them in superconducting classical and quantum electronics for various applications. The feasible path towards the use of ferromagnetic Josephson junctions in quantum circuits starts from experiments demonstrating macroscopic quantum tunneling in NbN/GdN/NbN junctions with ferro-insulator barriers and with triplet components of the supercurrent, supported by a self-consistent electrodynamic characterization as a function of the barrier thickness. This has inspired further studies on tunnel ferromagnetic junctions with a different layout and promoted the first generation of ferromagnetic Al-based JJs, specifically Al/AlO x /Al/Py/Al. This layout takes advantage of the capability to integrate the ferromagnetic layer in the junction without affecting the quality of the superconducting electrodes and of the tunnel barrier. The high quality of the devices paves the way for the possible implementation of Al tunnel-ferromagnetic JJs in superconducting quantum circuits. These achievements have promoted the notion of a novel type of qubit incorporating ferromagnetic JJs. This qubit is based on a transmon design featuring a tunnel JJ in parallel with a ferromagnetic JJ inside a SQUID loop capacitively coupled to a superconducting readout resonator. In conclusion, the effect of an external RF field on the magnetic switching processes of ferromagnetic JJs has been also investigated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1984

Simulation of solidification in a Bridgman cell

Bridgman-type crystal growth techniques are attractive methods for producing homogeneous, high-quality infrared detector and junction device materials. However, crystal imperfections and interface shapes still must be controlled through modification of the temperature and concentration gradients created during solidification. The objective of this investigation was to study the temperature fields generated by various cell and heatpipe configurations and operating conditions. Continuum's numerical model of the temperature, species concentrations, and velocity fields was used to describe the thermal characteristics of Bridgman cell operation.

Dakhoul, Y. M.↗
NASA NTRS1985

International Ultraviolet Explorer Atlas of O-typespectra from 1200 to 1900 Angstrom

The IUE archives provide an unprecedented sample of uniform, high-quality ultraviolet stellar spectra. In particular, they contain high-resolution SWP data for nearly 200 different O stars. We have undertaken a survey of the 1200-1900 A region in about 120 of them having homogeneous optical spectral classifications to investigate systematically the behavior of the ultraviolet features, incuding the prominent stellar wind profiles and the degree to which they correlate with the optical types. The standard extracted spectrograms have been rebinned to a constant wavelength resolution of 0.25A and uniformly normalized (not dereddened) at the GSFC RDAF. They are then plotted at 10A/cm, with reseau, photometric quality and echelle order junction flags available. This atlas contains such plots for about 100 stars, arranged in spectral-type, luminosity and peculiar object sequences. The results show a high degree of correlation between the ultraviolet features, both photospheric and stellar-wind, and the optical classifications for the majority of the O-type stars.

Walborn, N. R.↗
DOE OSTI2021

Carrier Diffusion Lengths in Continuously Grown and Etched-and-Regrown GaN Pin Diodes

Advanced GaN power devices are promising for many applications in high power electronics but performance limitations due to material quality in etched-and-regrown junctions prevent their widespread use. Carrier diffusion length is a critical parameter that not only determines device performance but is also a diagnostic of material quality. Here we present the use of electron-beam induced current to measure carrier diffusion lengths in continuously grown and etched-and-regrown GaN pin diodes as models for interfaces in more complex devices. Variations in the quality of the etched-and-regrown junctions are observed and shown to be due to the degradation of the n-type material. Finally, we observe an etched-and-regrown junction with properties comparable to a continuously grown junction.

42 ENGINEERING↗
NASA NTRS2003

Effect of Alignment on Transport Properties of Carbon Nanotube/Metallic Junctions

Ballistic and spin coherent transport in single walled carbon nanotubes (SWCNT) are predicted to enable high sensitivity single-nanotube devices for strain and magnetic field sensing. Based upon these phenomena, electron beam lithography procedures have been developed to study the transport properties of purified HiPCO single walled carbon nanotubes for development into sensory materials for nondestructive evaluation. Purified nanotubes are dispersed in solvent suspension and then deposited on the device substrate before metallic contacts are defined and deposited through electron beam lithography. This procedure produces randomly dispersed ropes, typically 2 - 20 nm in diameter, of single walled carbon nanotubes. Transport and scanning probe microscopy studies have shown a good correlation between the junction resistance and tube density, alignment, and contact quality. In order to improve transport properties of the junctions a technique has been developed to align and concentrate nanotubes at specific locations on the substrate surface. Lithographic techniques are used to define local areas where high frequency electric fields are to be concentrated. Application of the fields while the substrate is exposed to nanotube-containing solution results in nanotube arrays aligned with the electric field lines. A second electron beam lithography layer is then used to deposit metallic contacts across the aligned tubes. Experimental measurements are presented showing the increased tube alignment and improvement in the transport properties of the junctions.

Wincheski, Buzz↗
NASA NTRS2019

Turbulence Measurements on a Wing-Fuselage Junction Model for CFD Validation

Current turbulence models, such as those employed in Reynolds-averaged Navier-Stokes CFD, are unable to reliably predict the onset and extent of the three-dimensional separated flow that typically occurs in wing fuselage junctions. To critically assess, as well as to improve upon, existing turbulence models, experimental validation-quality flow field data in the junction region is needed. To that end, NASA has developed a CFD validation experiment for a generic full-span wing-fuselage junction model at subsonic conditions. In this paper, we present and discuss sample results from this effort, with a focus on turbulence measurements in the separated corner flow of the wing-fuselage junction that were obtained with an internally mounted laser Doppler velocimetry (LDV) system. In addition, sample comparisons between the flow field measurements and representative CFD of our test case are presented and here, we highlight some of the key discrepancies.

Kegerise, Michael↗
NASA NTRS2019

An Experimental Investigation of a Wing-Fuselage Junction Model in the NASA Langley 14- by 22-Foot Subsonic Tunnel

Current turbulence models, such as those employed in Reynolds-averaged Navier-Stokes CFD, are unable to reliably predict the onset and extent of the three-dimensional separated flow that typically occurs in wing-fuselage junctions. To critically assess, as well as to improve upon, existing turbulence models, experimental validation-quality flow-field data in the junction region is needed. In this report, we present an overview of experimental measurements on a wing-fuselage junction model that addresses this need. The experimental measurements were performed in the NASA Langley 14- by 22-Foot Subsonic Tunnel. The model was a full-span wing-fuselage body that was configured with truncated DLR-F6 wings, both with and without leading-edge extensions at the wing root. The model was tested at a fixed chord Reynolds number of 2.4 million, and angles-of-attack ranging from -10 degrees to +10 degrees were considered. Flow-field measurements were performed with a pair of miniature laser Doppler velocimetry (LDV) probes that were housed inside the model and attached to three-axis traverse systems. One LDV probe was used to measure the separated flow field in the trailing-edge junction region. The other LDV probe was alternately used to measure the flow field in the leading-edge region of the wing and to measure the incoming fuselage boundary layer well upstream of the leading edge. Both LDV probes provided measurements from which all three mean velocity components, all six independent components of the Reynolds-stress tensor, and all ten independent components of the velocity triple products were calculated. In addition to the flow-field measurements, static and dynamic pressures were measured at selected locations on the wings and fuselage of the model, infrared imaging was used to characterize boundary-layer transition, oil-flow visualization was used to visualize the separated flow in the leading- and trailing-edge regions of the wing, and unsteady shear stress was measured at limited locations using capacitive shear-stress sensors. Sample results from the measurement techniques employed during the test are presented and discussed.

Kegerise, Michael A.↗
DOE OSTI2023

Water-Assisted Lift-Off Process for Flexible CdTe Solar Cells

In recent years, various lift-off methods have been developed to fabricate lightweight and flexible cadmium telluride (CdTe)-based solar cells. In this work, we report flexible cadmium sulfide (CdS)/CdTe solar cells using a water-assisted lift-off approach. Here we demonstrate that an additional cadmium chloride treatment for the CdS film is critical to improve the grain size of CdS and the post-deposited CdTe film and the electron conductivity of the CdS film. As a result, the quality of the CdS/CdTe front junction is significantly improved with reduced nonradiative recombination. Finally, our lightweight and flexible polycrystalline CdTe solar cells demonstrate a champion power conversion efficiency of 12.6%.

14 SOLAR ENERGY↗
DOE OSTI2025

Implementation of scalable suspended superinductors

Superinductors have become a crucial component in the superconducting circuit toolbox, playing a key role in the development of more robust qubits. Enhancing the performance of these devices can be achieved by suspending the superinductors from the substrate, thereby reducing stray capacitance. Here, we present a fabrication framework for constructing superconducting circuits with suspended superinductors in planar architectures. To validate the effectiveness of this process, we systematically characterize both resonators and qubits with suspended arrays of Josephson junctions, ultimately confirming the high quality of the superinductive elements. In addition, this process is broadly compatible with other types of superinductors and circuit designs. Furthermore, our results not only pave the way for scalable superconducting architectures utilizing superinductors but also provide the primitive for future investigation of loss mechanisms associated with the device substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1975

Technique for producing 'good' GaAs solar cells using poor-quality substrates

Relatively good GaAs solar cells can be made from poor-quality substrates by making the junction deep (greater than 1 micron) instead of shallow and by 'leaching' both the pGaAs and nGaAs regions during the growth process. AM0 efficiencies of 14.7% (19% AM1) have been obtained from substrates with starting substrate diffusion lengths of 0.6 micron.

Hovel, H. J.↗
NASA NTRS1993

Superconducting Al-trilayer tunnel junctions for use as X-ray detectors

Photolithographic techniques have been developed to fabricate high-quality Al-Al oxide-Al superconducting tunnel junctions for use in X-ray detectors. These devices are designed to incorporate about 1-micron-thick superconducting X-ray absorbers for the detection of less than 10-keV single photons. In an effort to increase energy resolution, superconductor bandgap engineering with lateral and vertical trapping has been used to shorten quasi-particle tunneling times and diffusion lengths and to prevent quasi-particle diffusion away from the tunnel junction. Methods that have been developed for overcoming materials imcompatibility and device degradation upon thermal cycling are reported. The authors also report on the use of a nonrectangular tunnel junction geometry which reduces the magnetic field needed to suppress the Josephson current for stable biasing. Work in progress to measure the energy resolution of these X-ray detectors at 0.35 K is also discussed.

Gaidis, M. C.↗
NASA NTRS1993

Investigation of etching techniques for superconductive Nb/Al-Al2O3/Nb fabrication processes

Wet etching, CF4 and SF6 reactive ion etching (RIE), RIE/wet hybrid etching, Cl-based RIE, ion milling, and liftoff techniques have been investigated for use in superconductive Nb/Al-Al2O3/Nb fabrication processes. High-quality superconductor-insulator-superconductor (SIS) junctions have been fabricated using a variety of these etching methods; however, each technique offers distinct tradeoffs for a given process an wafer design. In particular, it was shown that SF6 provides an excellent RIE chemistry for low-voltage anisotropic etching of Nb with high selectivity to Al. The SF6 tool has greatly improved the trilevel resist junction insulation process. Excellent repeatability, selectivity with respect to quartz, and submicron resolution make Cl2 + BCl3 + CHCl3 RIE a very attractive process for trilayer patterning.

Lichtenberger, A. W.↗
NASA NTRS2005

Advances in Single and Multijunction III-V Photovoltaics on Silicon for Space Power

A collaborative research effort at MIT, Ohio State University and NASA has resulted in the demonstration of record quality gallium arsenide (GaAs) based single junction photovoltaic devices on silicon (Si) substrates. The ability to integrate highly efficient, radiation hard III-V based devices on silicon offers the potential for dramatic reductions in cell mass (approx.2x) and increases in cell area. Both of these improvements offer the potential for dramatic reductions in the cost of on-orbit electrical power. Recently, lattice matched InGaP/GaAs and metamorphic InGaP/InGaAs dual junction solar cells were demonstrated by MBE and OMVPE, respectively. Single junction GaAs on Si devices have been integrated into a space flight experiment (MISSES), scheduled to be launched to the International Space Station in March of 2005. I-V performance data from the GaAs/Si will be collected on-orbit and telemetered to ground stations daily. Microcracks in the GaAs epitaxial material, generated because of differences in the thermal expansion coefficient between GaAs and Si, are of concern in the widely varying thermal environment encountered in low Earth orbit. Ground based thermal life cycling (-80 C to + 80 C) equivalent to 1 year in LEO has been conducted on GaAs/Si devices with no discernable degradation in device performance, suggesting that microcracks may not limit the ability to field GaAs/Si in harsh thermal environments. Recent advances in the development and testing of III-V photovoltaic devices on Si will be presented.

Wilt, David M.↗
NASA NTRS1982

Diffused P+-N solar cells in bulk GaAs

Recently melt grown GaAs, made by liquid encapsulation techniques, has become available. This material is of sufficiently good quality to allow the fabrication of solar cells by direct diffusion. Results obtained with p(+)/n junction solar cells made by zinc diffusion are described. The quality of bulk GaAs for this application is evaluated.

Borrego, J. M.↗
DOE OSTI2020

A density-functional theory study of the Al/AlOx/Al tunnel junction

The aluminum oxide tunnel junction is a key component of the majority of superconducting quantum devices. For high-quality, reproducible, and scalably manufacturable qubits, the ability to fabricate Josephson junctions (JJs) with a targeted critical current and high uniformity is essential. In this study, we use first-principles modeling to assess fundamental aspects of the atomic structure of both amorphous and crystalline aluminum oxide tunnel junctions and relate the structure to predicted performance metrics. We use modified ab initio molecular dynamics to develop realistic models of the tunnel junction, from which interface roughness and local thickness fluctuations are analyzed in an unbiased manner by training a neural network to identify the boundary between metal and oxide. We show that the effective thickness of the insulating part of the junction can be different from the apparent physical thickness. We calculate the rate of Cooper pair tunneling for the atomically resolved electrostatic potential using direct numerical solution in 3D, which shows a channeling effect that impacts the junction critical current. The predicted critical current is a useful JJ design parameter that can be accessed from the ab initio calculations without fitting parameters. To assess the limits of uniformity and fabrication choices (e.g., oxidation vs epitaxy), we compare the amorphous junctions to crystalline models, which show order of magnitude more efficient tunneling compared to the amorphous case, underlining the connection between atomistic structure and Cooper pair tunneling efficiency. Further, this work provides a foundation for ab initio materials design and evaluation to help accelerate future development of improved tunnel junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Flatfielding of hybrid pixel detectors in tender x-ray scattering

The ability of the soft matter interfaces beamline at National Synchrotron Light Source II to access x-ray energy in the tender x-ray regime, i.e., from 2.1 to 5 keV, enables new resonant x-ray scattering studies at the sulfur K-edge and others. We present a new approach to correct data acquired in the tender x-ray regime with a Pilatus3 detector in order to improve the data quality and to correct the various artifacts inherent to hybrid pixel detectors, such as variations in modules’ efficiency or noisy detector module junctions. Further, this new flatfielding significantly enhances the data quality and enables detection of weak scattering signals.

47 OTHER INSTRUMENTATION↗