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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1990

Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates

The properties of heteroepitaxial InP cells were determined both before and after 10-MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1800/cm for 10-MeV protons compared with 2.2/cm for 1-MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the present cells are low, the recent achievement of 13.7 percent AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.

Weinberg, I.↗
NASA NTRS1991

Universal behavior in ideal slip

The slip energies and stresses are computed for defect-free crystals of Ni, Cu, Ag, and Al using the many-atom approach. A simple analytical expression for the slip energies is obtained, leading to a universal form for slip, with the energy scaled by the surface energy and displacement scaled by the lattice constant. Maximum stresses are found to be somewhat larger than but comparable with experimentally determined maximum whisker strengths.

Bozzolo, Guillermo↗
NASA NTRS1990

Application of the embedded atom method to Pb and Be

We have derived the embedding energy functional and two-body potential of the embedded atom method using decreasing exponentials for both the electron density and the two body potential. The embedding function was obtained from the equation of state given by Rose et al. (1984). Because of the form of the embedding function, the equilibrium lattice constant, cohesive energy, and bulk modulus are automatically satisfied. The two parameters phi(e) and gamma of the two-body potential were determined by fitting to shear modulus and the single vacancy formation energy. Contributions of up to the third nearest neighbors were included in the evaluation of the charge density rho and the two-body potential phi. The stability and anisotropy of each structure were estimated and compared with the available experimental data.

Karimi, M.↗
NASA NTRS1993

Crystal growth of compound semiconductors in a low-gravity environment (InGaAs crystals) (M-22)

Compound semiconductor crystals, such as gallium arsenide and indium phosphide crystals, have many interesting properties that silicon crystals lack, and they are expected to be used as materials for optic and/or electro-optic integrated devices. Generally speaking, alloy semiconductors, which consist of more than three elements, demonstrate new functions. For example, values of important parameters, such as lattice constant and emission wavelength, can be chosen independently. However, as it is easy for macroscopic and/or microscopic fluctuations of composition to occur in alloy semiconductor crystals, it is difficult to obtain crystals having homogeneous properties. Macroscopic change of composition in a crystal is caused by the segregation phenomenon. This phenomenon is due to a continuous change in the concentration of constituent elements at the solid-liquid interfacing during solidification. On Earth, attempts were made to obtain a crystal with homogeneous composition by maintaining a constant melt composition near the solid-liquid interface, through suppression of the convection flow of the melt by applying a magnetic field. However, the attempt was not completely successful. Convective flow does not occur in microgravity because the gravity in space is from four to six orders of magnitude less than that on Earth. In such a case, mass transfer in the melt is dominated by the diffusion phenomenon. So, if crystal growth is carried out at a rate that is higher than the rate of mass transfer due to this phenomenon, it is expected that crystals having a homogeneous composition will be obtained. In addition, it is also possible that microscopic composition fluctuations (striation) may disappear because microscopic fluctuations diminish in the absence of convection. We are going to grow a bulk-indium gallium arsenide (InGaAs) crystal using the gradient heating furnace (GHF) in the first material processing test (FMPT). The structure of the sample is shown where InGaAs polycrystals in a crucible are doubly sealed in two quartz tubes for safety. The GHF consists of two zones, namely, high temperature and low temperature zones, which results in a large temperature gradient at the interface. Crystal growth is performed by moving the furnace (i.e. the temperature profile) from the left to right at a definite rate. Thus, we will grow crystals both on Earth and in space under the same conditions. As previously described, it is possible to obtain good quality crystals which are homogeneous in composition both macroscopically and microscopically due to the lack of convection in space. We are planning to study the effects of convection on crystal growth from a melt by comparing and characterizing the properties of crystals grown on Earth with those grown in space.

Tatsumi, Masami↗
NASA NTRS1994

High quality InP-on-Si for solar cell applications

InP on Si solar cells combine the low-cost and high-strength of Si with the high efficiency and radiation tolerance of InP. The main obstacle in the growth of single crystal InP-on-Si is the high residual strain and high dislocation density of the heteroepitaxial InP films. The dislocations result from the large differences in lattice constant and thermal expansion mismatch of InP and Si. Adjusting the size and geometry of the growth area is one possible method of addressing this problem. In this work, we conducted a material quality study of liquid phase epitaxy overgrowth layers on selective area InP grown by a proprietary vapor phase epitaxy technique on Si. The relationship between growth area and dislocation density was quantified using etch pit density measurements. Material quality of the InP on Si improved both with reduced growth area and increased aspect ratio (length/width) of the selective area. Areas with etch pit density as low as 1.6 x 10(exp 4) sq cm were obtained. Assuming dislocation density is an order of magnitude greater than etch pit density, solar cells made with this material could achieve the maximum theoretical efficiency of 23% at AMO. Etch pit density dependence on the orientation of the selective areas on the substrate was also studied.

Shellenbarger, Zane A.↗
NASA NTRS1997

Differentiating Between H and F or H and CN on C(III) or Si(III) Surfaces

A Sc tipped probe molecule yields a larger difference for the probe-H vs probe-F interaction energies than our previously studied, electron-rich pyridine (C5H5N) and (CH3)3PO probes. However, the electron-deficient Sc tipped probe does not eliminate the probe-nearest data neighbor interaction problem associated with the C(III) surface. The difference in the probe-H and probe-F interaction energies is smaller for Si(III) than C(III), making it more difficult to differentiate between these two atoms on Si(III). The larger lattice constant for Si(III) significantly reduces the data atom-data atom interaction energy as well as the probe-neighbor interaction energies. This means that the H/CN system which is not practical for C(III) due to the CN-CN repulsion, is possible for Si(III). The difference in the probe-H and probe-CN interaction energies is very large for the H/CN data storage system, making this the best system studied to date. This system could be used on C(III) if a hydrogen 'fence' is built around each data site, which corresponds to using only one quarter of the surface sites for data storage.

Bauschlicher, Charles W.↗
NASA NTRS1998

Doping Scheme of Semiconducting Atomic Chains

Atomic chains, precise structures of atomic scale created on an atomically regulated substrate surface, are candidates for future electronics. A doping scheme for intrinsic semiconducting Mg chains is considered. In order to suppress the unwanted Anderson localization and minimize the deformation of the original band shape, atomic modulation doping is considered, which is to place dopant atoms beside the chain periodically. Group I atoms are donors, and group VI or VII atoms are acceptors. As long as the lattice constant is long so that the s-p band crossing has not occurred, whether dopant atoms behave as donors or acceptors is closely related to the energy level alignment of isolated atomic levels. Band structures are calculated for Br-doped (p-type) and Cs-doped (n-type) Mg chains using the tight-binding theory with universal parameters, and it is shown that the band deformation is minimized and only the Fermi energy position is modified.

Toshishige, Yamada↗
NASA NTRS2006

Advanced Catalysts for Fuel Cells

This viewgraph presentation reviews the development of catalyst for Fuel Cells. The objectives of the project are to reduce the cost of stack components and reduce the amount of precious metal used in fuel cell construction. A rapid combinatorial screening technique based on multi-electrode thin film array has been developed and validated for identifying catalysts for oxygen reduction; focus shifted from methanol oxidation in FY05 to oxygen reduction in FY06. Multi-electrode arrays of thin film catalysts of Pt-Ni and Pt-Ni-Zr have been deposited. Pt-Ni and have been characterized electrochemically and structurally. Pt-Ni-Zr and Pt-Ni films show higher current density and onset potential compared to Pt. Electrocatalytic activity and onset potential are found to be strong function of the lattice constant. Thin film Pt(59)Ni(39)Zr(2) can provide 10 times the current density of thin film Pt. Thin film Pt(59)Ni(39)Zr(2) also shows 65mV higher onset potential than Pt.

fuel cells↗
NASA NTRS1992

MBE growth technology for high quality strained III-V layers

III-V films are grown on large automatically perfect terraces of III-V substrates which have a different lattice constant, with temperature and Group II and V arrival rates chosen to give a Group III element stable surface. The growth is pulsed to inhibit Group III metal accumulation to low temperature, and to permit the film to relax to equilibrium. The method of the invention 1) minimizes starting step density on sample surface; 2) deposits InAs and GaAs using an interrupted growth mode (0.25 to 2 mono-layers at a time); 3) maintains the instantaneous surface stoichiometry during growth (As-stable for GaAs, In-stable for InAs); and 4) uses time-resolved RHEED to achieve aspects (1)-14 (3).

Grunthaner, Frank J.↗
NASA NTRS2011

Ab initio Computations of the Electronic, Mechanical, and Thermal Properties of Ultra High Temperature Ceramics (UHTC) ZrB2 and HfB2

Refractory materials such as metallic borides, often considered as ultra high temperature ceramics (UHTC), are characterized by high melting point, high hardness, and good chemical inertness. These materials have many applications which require high temperature materials that can operate with no or limited oxidation. Ab initio, first principles methods are the most accurate modeling approaches available and represent a parameter free description of the material based on the quantum mechanical equations. Using these methods, many of the intrinsic properties of these material can be obtained. We performed ab initio calculations based on density functional theory for the UHTC materials ZrB2 and HfB2. Computational results are presented for structural information (lattice constants, bond lengths, etc), electronic structure (bonding motifs, densities of states, band structure, etc), thermal quantities (phonon spectra, phonon densities of states, specific heat), as well as information about point defects such as vacancy and antisite formation energies.

Lawson, John W.↗
NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗
NASA NTRS2006

Recent Results from Epitaxial Growth on Step Free 4H-SiC Mesas

This paper updates recent progress made in growth, characterization, and understanding of high quality homoepitaxial and heteroepitaxial films grown on step-free 4H-SiC mesas. First, we report initial achievement of step-free 4H-SiC surfaces with carbon-face surface polarity. Next, we will describe further observations of how step-free 4H-SiC thin lateral cantilever evolution is significantly impacted by crystal faceting behavior that imposes non-uniform film thickness on cantilever undersides. Finally, recent investigations of in-plane lattice constant mismatch strain relief mechanisms observed for heteroepitaxial growth of 3C-SiC as well as 2H-AlN/GaN heterofilms on step-free 4H-SiC mesas will be reviewed. In both cases, the complete elimination of atomic heterointerface steps on the mesa structure enables uniquely well-ordered misfit dislocation arrays to form near the heterointerfaces with remarkable lack of dislocations threading vertically into the heteroepilayers. In the case of 3C-SiC heterofilms, it has been proposed that dislocation half-loops nucleate at mesa edges and glide laterally along the step-free 3C/4H interfaces. In contrast, 3C-SiC and 2H-AlN/GaN heterofilms grown on 4H-SiC mesas with steps exhibit highly disordered interface misfit dislocation structure coupled with 100X greater density of dislocations threading through the thickness of the heteroepilayers. These results indicate that the presence of steps at the heteroepitaxial interface (i.e., on the initial heteroepitaxial nucleation surface) plays a highly important role in the defect structure, quality, and relaxation mechanisms of single-crystal heteroepitaxial films.

Neudeck, Philip G.↗
NASA NTRS2016

Wide-Stopband Aperiodic Phononic Filters

We demonstrate that a phonon stopband can be synthesized from an aperiodic structure comprising a discrete set of phononic filter stages. Each element of the set has a dispersion relation that defines a complete bandgap when calculated under a Bloch boundary condition. Hence, the effective stopband width in an aperiodic phononic filter (PnF) may readily exceed that of a phononic crystal with a single lattice constant or a coherence scale. With simulations of multi-moded phononic waveguides, we discuss the effects of finite geometry and mode-converting junctions on the phonon transmission in PnFs. The principles described may be utilized to form a wide stopband in acoustic and surface wave media. Relative to the quantum of thermal conductance for a uniform mesoscopic beam, a PnF with a stopband covering 1.6-10.4 GHz is estimated to reduce the thermal conductance by an order of magnitude at 75 mK.

bandgap↗
NASA NTRS2016

Digital Alloy Absorber for Photodetectors

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Hill, Cory J.↗
NASA NTRSDate not supplied

X-Ray Diffraction Based Phase Identification in NiTiHf Shape Memory Alloys with Variable Hf Content

NiTiHf type shape memory alloys have been studied for use in high temperature actuator applications, the most studied of which is the NiTi-20Hf atomic % composition. In this study, six samples of NiTi-Hf including 20Hf, 30Hf, 35Hf, 40Hf, 45Hf, and 50Hf were evaluated by both 1D and 2D X-ray diffraction (XRD) to elucidate what phases and crystal structures were present at room temperature. Given small sample sizes and relatively large grains, multiple cross-sections were measured to increase the sampling statistics, and 2D XRD frames were collected to corroborate the 1D XRD data. Rietveld and structureless refinements were both performed, allowing for adjustments in orientation lattice constant, and structure factor. At room temperature, the primary martensitic phase in the NiTiHf alloys with 20 at% and lower Hf is a monoclinic B19’ phase (P1121/m space group). This phase was identifiable, even in small amounts, in the higher Hf samples. The primary phase in the 30 -50 at% Hf samples is an orthorhombic B33 (Cmcm space group) phase. This work supported thermal analyses indicating the phase transition paths from the two different room temperature martensitic phases to the B2 austenitic phase.

Laura Wilson↗
NASA NTRS1993

Multidisciplinary aeroelastic analysis of a generic hypersonic vehicle

This paper presents details of a flutter and stability analysis of aerospace structures such as hypersonic vehicles. Both structural and aerodynamic domains are discretized by the common finite element technique. A vibration analysis is first performed by the STARS code employing a block Lanczos solution scheme. This is followed by the generation of a linear aerodynamic grid for subsequent linear flutter analysis within subsonic and supersonic regimes of the flight envelope; the doublet lattice and constant pressure techniques are employed to generate the unsteady aerodynamic forces. Flutter analysis is then performed for several representative flight points. The nonlinear flutter solution is effected by first implementing a CFD solution of the entire vehicle. Thus, a 3-D unstructured grid for the entire flow domain is generated by a moving front technique. A finite element Euler solution is then implemented employing a quasi-implicit as well as an explicit solution scheme. A novel multidisciplinary analysis is next effected that employs modal and aerodynamic data to yield aerodynamic damping characteristics. Such analyses are performed for a number of flight points to yield a large set of pertinent data that define flight flutter characteristics of the vehicle. This paper outlines the finite-element-based integrated analysis procedures in detail, which is followed by the results of numerical analyses of flight flutter simulation.

Gupta, K. K.↗
NASA NTRS2002

Solid state 31phosphorus nuclear magnetic resonance of iron-, manganese-, and copper-containing synthetic hydroxyapatites

The incorporation of micronutrients into synthetic hydroxyapatite (SHA) is proposed for slow release of these nutrients to crops in the National Aeronautics and Space Administration's (NASA's) Advanced Life Support (ALS) program for Lunar or Martian outposts. Solid state 31P nuclear magnetic resonance (NMR) was utilized to examine the paramagnetic effects of Fe3+, Mn2+, and Cu2+ to determine if they were incorporated into the SHA structure. Separate Fe3+, Mn2+, and Cu2+ containing SHA materials along with a transition metal free SHA (pure-SHA) were synthesized using a precipitation method. The proximity (<1 nm) of the transition metals to the 31P nuclei of SHA were apparent when comparing the integrated 31P signal intensities of the pure-SHA (87 arbitrary units g-1) with the Fe-, Mn-, and Cu-SHA materials (37-71 arbitrary units g-1). The lower integrated 31P signal intensities of the Fe-, Mn-, and Cu-SHA materials relative to the pure-SHA suggested that Fe3+, Mn2+, and Cu2+ were incorporated in the SHA structure. Further support for Fe3+, Mn2+, and Cu2+ incorporation was demonstrated by the reduced spin-lattice relaxation constants of the Fe-, Mn-, and Cu-SHA materials (T'=0.075-0.434s) relative to pure-SHA (T1=58.4s). Inversion recovery spectra indicated that Fe3+, Mn2+, and Cu2+ were not homogeneously distributed about the 31P nuclei in the SHA structure. Extraction with diethylene-triamine-penta-acetic acid (DTPA) suggested that between 50 and 80% of the total starting metal concentrations were incorporated in the SHA structure. Iron-, Mn-, and Cu-containing SHA are potential slow release sources of Fe, Mn, and Cu in the ALS cropping system.

NASA Discipline Life Support Systems↗
NASA NTRS1971

Thermal conductivity and electrical resistivity of porous material

Thermal conductivity and electrical resistivity of porous materials, including 304L stainless steel Rigimesh, 304L stainless steel sintered spherical powders, and OFHC sintered spherical powders at different porosities and temperatures are reported and correlated. It was found that the thermal conductivity and electrical resistivity can be related to the solid material properties and the porosity of the porous matrix regardless of the matrix structure. It was also found that the Wiedermann-Franz-Lorenz relationship is valid for the porous materials under consideration. For high conductivity materials, the Lorenz constant and the lattice component of conductivity depend on the material and are independent of the porosity. For low conductivity, the lattice component depends on the porosity as well.

Koh, J. C. Y.↗