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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Self-Heterodyne Laser-Spectrum Analyzer

Apparatus measures spectral widths of light emitted by GaAs or other narrow-linewidth diode lasers at wavelengths between 800 and 900 nm. Operating on quasi-homodyne of self-heterodyne principle, apparatus provides relatively high spectral resolution: measures spectral widths of order of 100 kHz. Fine spectral resolution of apparatus provides data relevant to use of AlGaAs diode lasers in such applications as coherent optical communication through free space and injection seeding of solid-state lasers. Also used to explore connections between lifetimes and spectral widths of diode lasers.

Saif, Babak↗
NASA NTRS1979

An atomic model for neutral and singly ionized uranium

A model for the atomic levels above ground state in neutral, U(0), and singly ionized, U(+), uranium is described based on identified atomic transitions. Some 168 states in U(0) and 95 in U(+) are found. A total of 1581 atomic transitions are used to complete this process. Also discussed are the atomic inverse lifetimes and line widths for the radiative transitions as well as the electron collisional cross sections.

Maceda, E. L.↗
DOE OSTI2025

Precision measurement of the B0 meson lifetime using B0→J/ψK∗0 decays with the ATLAS detector

A measurement of the B0$$B^{0}$$ meson lifetime using B0→J/ψK∗0$$ B^{0} \rightarrow J/\psi K^{*0} $$ decays in data from 13 TeV$$\text {TeV}$$ proton–proton collisions with an integrated luminosity of 140fb-1$$ 140~\mathrm {fb^{-1}} $$ recorded by the ATLAS detector at the LHC is presented. The measured effective lifetime is τ=1.5053±0.0012(stat.)±0.0035(syst.)ps.$$ \tau = 1.5053\pm 0.0012~\mathrm {(stat.)} \pm 0.0035~\mathrm {(syst.)~ps}. $$The average decay width extracted from the effective lifetime, using parameters from external sources, is Γd=0.6639±0.0005(stat.)±0.0016(syst.)±0.0038(ext.)ps-1,$$\begin{aligned} \Gamma _d = 0.6639\pm 0.0005~\mathrm {(stat.)} \pm 0.0016~\mathrm {(syst.)}\\ \pm 0.0038~\text {(ext.)} \text {~ps}^{-1}, \end{aligned}$$where the uncertainties are statistical, systematic and from external sources. The earlier ATLAS measurement of Γs$$\Gamma _s$$ in the Bs0→J/ψϕ$$B^{0}_{s} \rightarrow J/\psi \phi $$ decay was used to derive a value for the ratio of the average decay widths Γd$$\Gamma _d$$ and Γs$$\Gamma _s$$ for B0$$B^{0} $$ and Bs0$$B^{0}_{s} $$ mesons respectively, of ΓdΓs=0.9905±0.0022(stat.)±0.0036(syst.)±0.0057(ext.).$$ \frac{\Gamma _d }{\Gamma _s } = 0.9905\pm 0.0022~\text {(stat.)} \pm 0.0036~\text {(syst.)} \pm 0.0057~\text {(ext.)}. $$The measured lifetime, average decay width and decay width ratio are in agreement with theoretical predictions and with measurements by other experiments. This measurement provides the most precise result of the effective lifetime of the B0$$B^{0}$$ meson to date.

Aad, G↗
DOE OSTI2025

Total absorption spectroscopy for the 𝛽 + decay strength distribution of 60 Ga

𝛽-decay properties play an important role in most astrophysical processes. In the absence of experimental data, astrophysical models rely on global theoretical calculations to provide the relevant properties. It is therefore important to provide strong experimental constraints when possible. In the case of 𝛽-decay, the most sensitive probe is the 𝛽-decay strength distribution. We report here on the first measurement of the latter quantity for the 𝛽 + decay of 60 Ga using the total absorption spectroscopy technique. The experimental results are compared to theoretical calculations often used in astrophysical models, namely the shell model and the quasiparticle random phase approximation (QRPA), as well as an extension of QRPA that includes higher-order nucleonic calculations. Both models are in reasonable agreement with the experimental results.

59 ≤ A ≤ 89↗
DOE OSTI2025

Carrier Lifetime Control Through the Quantum Confined Stark Effect

This study explores how the quantum confined Stark effect (QCSE) influences minority carrier lifetimes in III-N quantum wells (QWs) by varying the well width. It is found that increasing QW width from zero (bulk material) increases radiative lifetime due to charge separation until charge screening effects reduce and rectify the QCSE for large well widths.

Loveless, James Terrell [Sandia National Laborator↗
NASA NTRS2005

Strong-field Gravitational Effects in the Timing and Spectroscopy of X-Ray Binaries

Using the ray-tracing code described, we developed additional features to the hot spot model to explain the broadening of the quasi-periodic oscillation (QPO) peaks as well as the damping of higher frequency harmonics in the power spectrum. We derived a number of analytic results that agree closely with more detailed numerical calculations. Three primary pieces are developed: the superposition of multiple hot spots with finite lifetimes and random phases, a width in the radial distribution of geodesic orbits, and the scattering of photons from the hot spot through a corona around the black hole. The complete model is used to fit the observed power spectra of both type A and type B QPOs seen in XTE 51550-564, giving confidence limits on each of the model parameters. These results were presented in a conference paper and in a refereed publication. We also explored the possibility of using higher-order statistics, particularly the bispectrum and bicoherence, to distinguish between competing QPO models. These methods were applied to the hot spot model and a method was proposed to map out the spacetime metric around Kerr black holes in Ref. 3 below.

Bertschinger, Edmund↗
DOE OSTI2025

Molecular Engineering of Emissive Molecular Qubits Based on Spin-Correlated Radical Pairs

Spin chemistry of photogenerated spin-correlated radical pairs (SCRPs) offers a practical approach to control chemical reactions and molecular emissions by using weak magnetic fields. This capability to harness magnetic field effects (MFEs) paves the way for developing SCRPs-based molecular qubits. Here, in this work, we introduce a new series of donor–chiral bridge–acceptor (D–χ–A) molecules that demonstrate significant MFEs on fluorescence intensity and lifetime in solution at room temperature—critical for quantum sensing. By precisely tuning the donor site through torsional locking, distance extension, and planarization, we achieved remarkable control over key quantum properties, including field-response range and line width. In the most responsive systems, emission lifetimes increased by over 200%, and the total emission intensity was modulated by up to 30%. This level of tunability shows the power of synthetic spin chemistry. The rational design principle of optically addressable SCRP-based molecular systems, presented in this work, represents a major leap toward functional synthetic molecular qubits, advancing the field of molecular quantum technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗
NASA NTRS1988

Nonlinear absorption properties of AlGaAs/GaAs multiple quantum wells grown by metalorganic chemical vapor deposition

The nonlinear absorption properties of the excitonic resonances associated with multiple quantum wells (MQWs) in AlGaAs/GaAs grown by metalorganic chemical vapor deposition are reported. The dependence of the saturation properties on growth parameters, especially growth temperature, and the well width are described. The minimum measured saturation intensity for these materials is 250 W/sq cm, the lowest reported value to date. The low saturation intensities are the result of excellent minority carrier properties. A systematic study of minority carrier lifetimes in quantum wells are reported. Lifetimes range from 50-350 ns depending on growth temperature and well width. When corrected for lateral diffusion effects and the measured minority carrier lifetime, the saturation data suggest that saturation intensities as low as 2.3 W/sq cm can be achieved in this system. The first measurements of the dependence of the exciton area and the magnitude of the excitonic absorption on well width are prsented. The growth of MQW structures on transparent GaP substrates is demonstrated and the electroabsorption properties of these structures are reviewed.

Lee, Hsing-Chung↗
NASA NTRS1974

A theoretical analysis of the current-voltage characteristics of solar cells

The current-voltage characteristics and efficiencies of solar cells are discussed. For one solar cell structure detailed curves are presented which include carrier densities, current densities, potential, and quasi-Fermi levels at different voltage levels both with and without optically generated carriers (AMO conditions). In addition some results are presented concerning the influence of various parameter variations such as lifetime, cell thickness, and high-low junction width on solar cell performance.

Hauser, J. R.↗
NASA NTRS1993

Response of silicon solar cell to pulsed laser illumination

The response of silicon solar cell(s) to pulsed laser illumination is discussed. The motivation was due to the interest of Earth to space/Moon power beaming applications. When this work began, it was not known if solar cells would respond to laser light with pulse lengths in the nanosecond range and a repetition frequency in the kHz range. This is because the laser pulse would be shorter than the minority carrier lifetime of silicon. A 20-nanosecond (ns) full width half max (FWHM) pulse from an aluminum-gallium/arsenide (Al-Ga-As) diode laser was used to illuminate silicon solar cells at a wavelength of 885 nanometers (nm). Using a high-speed digital oscilloscope, the response of the solar cells to individual pulses across various resistive loads was observed and recorded.

Willowby, D.↗
DOE OSTI2026

Gallium Arsenide Semiconductor Opening Switches: Enabling Nanosecond High Powering Pulsed Systems

The goal of this work awas to investigate design manufacturing semiconductor opening switches (SOS) in both silicon and gallium arsenide (GaAs). Solid-state opening switches are critical components for pulsed power systems and applications in directed energy, dielectric wall accelerators, and novel semiconductor manufacturing techniques. Under this funding, we have developed silicon SOS designs that suppresses an unwanted prepulse, increases the peak output voltage by about 10 percent, and reduces the pulse rise time by ~ 4x compared with more conventional profiles. Through this effort we have improved device fabrication and bonding techniques. Additionally, work on this the GaAs opening switch has defined a unique application space that these devices are suited for. GaAs opening switches have short risetimes and pulse widths compared to silicon devices, however the short carrier lifetime of GaAs makes the circuit design more challenging than in silicon. For high PRF operation, the lifetime of the GaAs is an advantage compared to silicon. TCAD simulations of GaAs devices have been used to optimize a GaAs profile. Additionally, we have designed pulsers with sub 50ns reserve pump times and tested GaAs COTs PIN diodes in them.

42 ENGINEERING↗
NASA NTRS1975

A newly observed solar feature - Macrospicules in He II 304 A

He II 304 A spectroheliograms, obtained with the NRL extreme-ultraviolet slitless spectrograph during the Skylab mission, show spikelike structures at the sun's polar limb which resemble the familiar H-alpha spicules. However, the relatively large size and long life of these He II features has led to distinguishing them by the name 'macrospicules'. The macrospicules appear as protuberances or jets, ranging from 5 to over 60 sec in length, from 5 to 30 sec in width, and from 5 to over 40 minutes in lifetime. Perhaps the most radical departure from H-alpha spicules is that macrospicules occur only within the chromospheric boundaries of coronal holes. Thus macrospicules are most easily visible over the solar poles due to the coronal holes normally present there, and much less frequently at lower latitudes during limb passage of relatively rare, low-latitude coronal holes.

Bohlin, J. D.↗
NASA NTRS1977

Automated array assembly task, phase 1

Various aspects of a sensitivity analysis, in particular, the impact of variations in metal sheet resistivity, metal line width, diffused layer sheet resistance, junction depth, base layer lifetime, optical coating thickness and optical coating refractive index and on process reproducibility for A's diffusion from a polymer dopant source and on module fabrication were studied. Model calculations show that acceptable process windows exist for each of these parameters.

Carbajal, B. G.↗
NASA NTRS1987

Doubly differential cross sections for galactic heavy-ion fragmentation

An abrasion-ablation T-matrix formulation is applied to the calculation of double differential-cross sections in projectile fragmentation of 2.1 GeV/nucleon O-16 on Be-9 and 86 MeV/nucleon C-12 on C-12 and Ag-108. An exponential parameterization of the ablation T-matrix is used and the total width of the intermediate states is taken as a parameter. Fitted values of the total width to experimental results are used to predict the lifetime of the ablation stage and indicate a decay time on the order of 10 to the -19th power sec.

Cucinotta, Francis A.↗
NASA NTRS1975

Widths of atomic 4s and 4p vacancy states, 46 less than or equal to Z less than or equal to 50

Auger and X-ray photoelectron spectra involving N1, N2, and N3 vacancy states of Pd, Ag, Cd, In, and Sn were measured and compared with results of free atom calculations. As previously observed in Cu and Zn Auger spectra that involve 3d-band electrons, free-atom characteristics with regard to widths and structure were found in the Ag and Cd M4-N4,5N4,5 and M5-N4,5N4,5 Auger spectra that arise from transitions of 4d-band electrons. Theoretical N1 widths computed with calculated free-atom Auger energies agree well with measurements. Theory however predicts wider N2 than N3 vacancy states (as observed for Xe), while the measured N2 and N3 widths are nearly equal to each other and to the average of the calculated N2 and N3 widths. The calculations are made difficult by the exceedingly short lifetime of some 4p vacancies and by the extreme sensitivity of super-Coster-Kronig rates, which dominate the deexcitation, to the transition energy and to the fine details of the atomic potential.

Hsiungchen, M.↗
NASA NTRS1976

Widths of atomic 4s and 4p vacancy states, Z between 46 and 50

X-ray photoelectron and Auger spectra involving N sub 1, N sub 2, and N sub 3 vacancy states of Pd, Ag, Cd, In, and Sn were measured and compared with results of free-atom calculations. As previously observed in Cu and Zn Auger spectra that involve 3d-band electrons, free-atom characteristics are found, with regard to widths and structure, in the Ag and Cd M sub 4-N sub 4,5 N sub 4,5 and M sub 5-N sub 4,5 N sub 4,5 Auger spectra that arise from transitions of 4d-band electrons. Theoretical N sub 1 widths computed with calculated free-atom Auger energies agree well with measurements. Theory, however, predicts wider N sub 2 than N sub 3 vacancy states (as observed for Xe), while the measured N sub 2 and N sub 3 widths are nearly equal to each other and to the average of the calculated N sub 2 and N sub 3 widths. The calculations are made difficult by the exceedingly short lifetime of some 4 p vacancies and by the extreme sensitivity of super-Coster-Kronig rates, which dominate the deexcitation to the transition energy and to the fine details of the atomic potential.

Chen, M. H.↗
NASA NTRS1984

Absolute OH absorption cross sections (for lidar measurements)

Experimental data are employed to calculate absorption cross sections for several rotational lines in the OH A-X system. The cross sections are computed as functions of the spectral and line widths and temperature of a laser beam, and account for lifetimes and branching ratios. Detection limits for the P1(2) transition of the (1,0) band were examined. The oscillator strengths and cross-sections obtained are important for quantifying OH concentrations in the stratosphere from lidar return signals.

Mcgee, T. J.↗