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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Single Kerr-Schild metric for Taub-NUT instanton

It is shown that a complex coordinate transformation maps the Taub-Newman-Unti-Tamburino instanton metric to a Kerr-Schild metric. This metric involves a semi-infinite line defect as the gravitational analog of the Dirac string, much like the original metric. Moreover, it facilitates three versions of classical double copy correspondence with the self-dual dyon in electromagnetism, one of which involves a nonlocal operator. The relevance to the Newman-Janis algorithm is briefly noted. Published by the American Physical Society 2025

Kim, Joon-Hwi (ORCID:000000025474123X)↗
DOE OSTI2025

Symmetries of all lines in monolayer crystals

As `2D' materials (i.e. materials just a few atoms thick) continue to gain prominence, understanding their symmetries is critical for unlocking their full potential. In this work, we present comprehensive tables that tabulate the rod group symmetries of all crystallographic lines in all 80 layer groups, which describe the symmetries of 2D materials. These tables are analogous to the scanning tables for space groups found in Volume E of the International Tables for Crystallography, but are specifically tailored for layer groups and their applications to 2D materials. This resource will aid in the analysis of line defects, such as domain walls, which play a crucial role in determining the properties and functionality of 2D materials.

2D materials↗
DOE OSTI2025

A Role for the Plastidial GPT2 Translocator in the Modulation of Lignin Biosynthesis

ABSTRACT Engineering plants with reduced lignin content can result in pleiotropic growth defects. In stems of Arabidopsis plants with reduced expression of hydroxycinnamoyl CoA: shikimate hydroxycinnamoyl transferase (HCT), the plastidial glucose 6‐phosphate: phosphate co‐transporter GPT2 is highly overexpressed, and this coincides with reduced lignin levels and extensive transcriptional and metabolic reprogramming. To explore the potential relationship between GPT2 expression and lignin accumulation, GPT2 transcript levels were evaluated in a suite ofArabidopsis thalianaandMedicago truncatulalignin‐defective lines. We also examined lignin levels and composition, and transcriptomic and metabolic profiles in GPT2 loss‐of‐function, GPT2 overexpression, and wild‐type Arabidopsis plants. Loss of GPT2 had no effect on lignin, but its overexpression caused a decrease in stem lignin levels due to reduced accumulation of both guaiacyl and syringyl lignins and their associated monolignol pools.HCTtranscript levels were diminished in 35S‐GPT2 lines, indicating a potential transcriptional regulatory connection between lignin biosynthesis and GPT2. Based on our transcriptomic and metabolomic analyses, we suggest that GPT2 operates to balance the flux between the biosynthesis of lignin and light‐protective phenylpropanoid derivatives.

Plant Sciences↗
DOE OSTI2024

Unzipping hBN with ultrashort mid-infrared pulses

Manipulating the nanostructure of materials is critical for numerous applications in electronics, magnetics, and photonics. However, conventional methods such as lithography and laser writing require cleanroom facilities or leave residue. We describe an approach to creating atomically sharp line defects in hexagonal boron nitride (hBN) at room temperature by direct optical phonon excitation with a mid-infrared pulsed laser from free space. We term this phenomenon “unzipping” to describe the rapid formation and growth of a crack tens of nanometers wide from a point within the laser-driven region. Formation of these features is attributed to the large atomic displacement and high local bond strain produced by strongly driving the crystal at a natural resonance. This process occurs only via coherent phonon excitation and is highly sensitive to the relative orientation of the crystal axes and the laser polarization. Its cleanliness, directionality, and sharpness enable applications such as polariton cavities, phonon-wave coupling, and in situ flake cleaving.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Atomic-resolution structural and spectroscopic evidence for the synthetic realization of two-dimensional copper boride

Since the first realization of borophene on Ag(111), two-dimensional (2D) boron nanomaterials have attracted substantial interest because of their polymorphic diversity and potential for hosting solid-state quantum phenomena. Here, we use atomic-resolution scanning tunneling microscopy (STM) and field-emission resonance (FER) spectroscopy to elucidate the structure and properties of atomically thin boron phases grown on Cu(111). Specifically, FER spectroscopy reveals charge transfer and electronic states that strongly differ from the decoupled borophene phases observed on silver, suggesting that the deposition of boron on copper results in strong covalent bonding characteristic of a 2D copper boride. This conclusion is reinforced by detailed STM characterization of line defects that are consistent with density functional theory calculations for atomically thin Cu8B14. This evidence for 2D copper boride is likely to motivate future synthetic efforts aimed at expanding the relatively unexplored family of atomically thin metal boride materials.

Science & Technology - Other Topics↗
NASA NTRS1984

Failure analysis for composite laminates

A discussion of the tensor polynomial failure criterion is presented together with a description of a biaxial compression test procedure used in the evaluation of the interaction strength parameters. In addition, a formulation for predicting the fatigue life of laminates is given based on the experimental evaluation of fatigue functions which are also utilized in a form of the tensor polynomial failure criterion as well. Experimental results are provided to compare with the fatigue life predictions and to demonstrate the effect of flaws and environment. Both bond-line defects in sandwich beam construction and inter-laminar disbond flaws are studied. Up to present, compressive strength test data have been obtained for ambient and elevated temperature, moisture-saturated conditions, including results from thermal-spike cycling simulating supersonic flight.

Tennyson, R. C.↗
NASA NTRS1999

In-Situ Optical Determination of Thermomechanical Properties of ZnSe and ZnTe Crystals

At temperatures above 1/2 T(sub m), the generation and movement of dislocations may result due to the load created by the weight of the crystal itself The deformation may be expected to increase the line defect density and may result in generation of low angle grain boundaries, especially in the regions of the crystal attached to the ampule. It has often been suspected that elimination of this effect in space can improve crystallinity of crystals grown under microgravity conditions, however, a direct experimental proof of such relation is still missing. In this work we have designed and built a system of in-situ optical detection and measurement of the mechanical deformations of a crystal wafer under its own weight, and studied the deformation effects as a function of temperature. The results of the measurements for ZnSe and ZnTe crystal wafers will be presented.

Burger, A.↗
NASA NTRS1987

Absolute instability of the Gaussian wake profile

Linear parallel-flow stability theory has been used to investigate the effect of viscosity on the local absolute instability of a family of wake profiles with a Gaussian velocity distribution. The type of local instability, i.e., convective or absolute, is determined by the location of a branch-point singularity with zero group velocity of the complex dispersion relation for the instability waves. The effects of viscosity were found to be weak for values of the wake Reynolds number, based on the center-line velocity defect and the wake half-width, larger than about 400. Absolute instability occurs only for sufficiently large values of the center-line wake defect. The critical value of this parameter increases with decreasing wake Reynolds number, thereby indicating a shrinking region of absolute instability with decreasing wake Reynolds number. If backflow is not allowed, absolute instability does not occur for wake Reynolds numbers smaller than about 38.

Hultgren, Lennart S.↗
DOE OSTI2025

Defect Complexes in CrSBr Revealed Through Electron Microscopy and Deep Learning

Atomic defects underpin the properties of van der Waals materials, and their understanding is essential for advancing quantum and energy technologies. Scanning transmission electron microscopy is a powerful tool for defect identification in atomically thin materials, and extending it to multilayer and beam-sensitive materials would accelerate their exploration. Here, we establish a comprehensive defect library in a bilayer of the magnetic quasi-1D semiconductor CrSBr by combining atomic-resolution imaging, deep learning, and calculations. We apply a custom-developed machine learning work flow to detect, classify, and average point vacancy defects. This classification enables us to uncover several distinct Cr interstitial defect complexes, combined Cr and Br vacancy defect complexes, and lines of vacancy defects that extend over many unit cells. We show that their occurrence is in agreement with our computed structures and binding energy densities, reflecting the intriguing layer interlocked crystal structure of CrSBr. Our ab initio calculations show that the interstitial defect complexes give rise to highly localized electronic states. These states are of particular interest due to the reduced electronic dimensionality and magnetic properties of CrSBr and are, furthermore, predicted to be optically active. Our results broaden the scope of defect studies in challenging materials and reveal new defect types in bilayer CrSBr that can be extrapolated to the bulk and to over 20 materials belonging to the same FeOCl structural family.

deep learning↗
DOE OSTI2025

Stability and Mobility of Disconnections in Solute Atmospheres: Insights from Interfacial Defect Diagrams

This Letter explores the stability of disconnections (step-dislocation defects) at grain boundaries in binary alloys. We introduce interfacial defect diagrams, derived from atomistic simulations and segregation theory, to predict the stability of disconnections in the temperature-solute concentration phase space and relate it to governing segregation mechanisms. These diagrams reveal multiple stability regimes influenced by solute-induced clustering and pinning effects impacting the thermal migration of disconnections and offering insights into their thermodynamics and kinetic properties.

Crystal structure↗
DOE OSTI2024

Phase Pattern Formation in Grain Boundaries

Here, in this Letter, we derive conditions that predict the existence of two-phase periodic-pattern grain boundary structures that are stable against coarsening. While previous research has established that elastic effects can lead to phase pattern formation on crystal surfaces, the possibility of stable grain boundary structures composed of alternating grain boundary phases has not been previously analyzed. Our theory identifies the specific combination of grain boundary and materials properties that enable the emergence of patterned grain boundary states and shows that the dislocation content of grain boundary phase junctions, absent in surface phenomena, weakens the stability of the patterned structures. The predictions of the theory are tested using a model copper grain boundary that exhibits multiple phases and two-phase pattern formation. We discuss how, similarly to surfaces, elastic effects associated with grain boundary phase junctions have profound implications for how grain boundary phases transform.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Electro-Thermal Simulation Studies of SiC Junction Diodes Containing Screw Dislocations Under High Reverse-Bias Operation

The objective of this work was to conduct a modeling study of SiC P-N junction diodes operating under high reverse biased conditions. Analytical models and numerical simulation capabilities were to be developed for self-consistent electro-thermal analysis of the diode current-voltage (I-V) characteristics. Data from GRC indicate that screw dislocations are unavoidable in large area SiC devices, and lead to changes in the SiC diode electrical response characteristics under high field conditions. For example, device instability and failures linked to internal current filamentation have been observed. The physical origin of these processes is not well understood, and quantitative projections of the electrical behavior under high field and temperature conditions are lacking. Thermal calculations for SiC devices have not been reported in the literature either. So estimates or projections of peak device temperatures and power limitations do not exist. This numerical study and simulation analysis was aimed at resolving some of the above issues. The following tasks were successfully accomplished: (1) Development of physically based models using one- and two-dimensional drift-diffusion theory for the transport behavior and I-V characteristics; (2) One- and two-dimensional heat flow to account for internal device heating. This led to calculations of the internal temperature profiles, which in turn, were used to update the electrical transport parameters for a self-consistent analysis. The temperature profiles and the peak values were thus obtainable for a given device operating condition; (3) Inclusion of traps assumed to model the presence of internal screw dislocations running along the longitudinal direction; (4) Predictions of the operating characteristics with and without heating as a function of applied bias with and without traps. Both one and two-dimensional cases were implemented; (5) Assessment of device stability based on the operating characteristics. The presence of internal non-uniformities, particularly filamentary structures, was probed and demonstrated; (6) Cause and physical origins of filamentary behavior and unstable I-V characteristics were made transparent; (7) It was demonstrated that diodes containing defects would be more prone to thermal breakdown associated with the temperature dependent decrease in the thermal conductivity; and (8) Finally, negative differential resistance (S-shaped NDR) which can potential lead to device instability and filamentary behavior was shown to occur for diodes containing a line of defects such as could be associated with a screw dislocation line.

Joshi, R. P.↗
DOE OSTI2024

Lattice realizations of topological defects in the critical (1+1)-d three-state Potts model

Topological/perfectly-transmissive defects play a fundamental role in the analysis of the symmetries of two dimensional conformal field theories (CFTs). In the present work, spin chain regularizations for these defects are proposed and analyzed in the case of the three-state Potts CFT. In particular, lattice versions for all the primitive defects are presented, with the remaining defects obtained from the fusion of the primitive ones. The defects are obtained by introducing modified interactions around two given sites of an otherwise homogeneous spin chain with periodic boundary condition. The various primitive defects are topological on the lattice except for one, which is topological only in the scaling limit. The lattice models are analyzed using a combination of exact diagonalization and density matrix renormalization group techniques. Low-lying energy spectra for different defect Hamiltonians as well as entanglement entropy of blocks located symmetrically around the defects are computed. The latter provides a convenient way to compute the g-function which characterizes various defects. Finally, the eigenvalues of the line operators in the “crossed channel” and fusion of different defect lines are also analyzed. The results are all in agreement with expectations from conformal field theory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

TEM Characterization of Neutron Irradiated HfAl3-Al Composite Specimens

Particles comprised of a thermal neutron absorbing material (HfAl3) are dispersed in a metal matrix material with high thermal conductivity (aluminum) to conduct the heat generated by neutron capture away from the fuel and materials. This metal matrix composite is very promising for use as a conduction-cooled neutron absorber and has the potential to be useful as a shroud or heat sink for testing advanced fast reactor fuels and materials in an existing thermal reactor. To design and optimize the absorber block system for advanced reactor designs, fundamental understanding of the irradiation effect on material properties is necessary. This dataset contains TEM characterization results of neutron irradiated HfAl3-Al composite specimens. It is focused on the irradiation induced defects (dislocation lines and loops) characterization using the on-zone axis bright field STEM technique. This data was collected using a FEI Tecnai G2 F30 S/TEM at the Microscopy and Characterization Suite (MaCS), Center for Advanced Energy Studies (CAES).

Guillen, Donna↗
DOE OSTI2024

TEM Characterization of Neutron Irradiated HfAl3-Al Composite Specimens

Particles comprised of a thermal neutron absorbing material (HfAl3) are dispersed in a metal matrix material with high thermal conductivity (aluminum) to conduct the heat generated by neutron capture away from the fuel and materials. This metal matrix composite is very promising for use as a conduction-cooled neutron absorber and has the potential to be useful as a shroud or heat sink for testing advanced fast reactor fuels and materials in an existing thermal reactor. To design and optimize the absorber block system for advanced reactor designs, fundamental understanding of the irradiation effect on material properties is necessary. This dataset contains TEM characterization results of neutron irradiated HfAl3-Al composite specimens. It is focused on the irradiation induced defects (dislocation lines and loops) characterization using the on-zone axis bright field STEM technique. This data was collected using a FEI Tecnai G2 F30 S/TEM at the Microscopy and Characterization Suite (MaCS), Center for Advanced Energy Studies (CAES).

Guillen, Donna↗