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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Axion Dark Matter Experiment: Detailed design and operations

Axion dark matter experiment ultra-low noise haloscope technology has enabled the successful completion of two science runs (1A and 1B) that looked for dark matter axions in the 2.66–3.1 μeV mass range with Dine–Fischler–Srednicki–Zhitnisky sensitivity. Therefore, it is the most sensitive axion search experiment to date in this mass range. Here, we discuss the technological advances made in the last several years to achieve this sensitivity, which includes the implementation of components, such as the state-of-the-art quantum-noise-limited amplifiers and a dilution refrigerator. Furthermore, we demonstrate the use of a frequency tunable microstrip superconducting quantum interference device amplifier in run 1A, and a Josephson parametric amplifier in run 1B, along with novel analysis tools that characterize the system noise temperature.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Low-frequency noise characteristics of GaN vertical PIN diodes—Effects of design, current, and temperature

We report low-frequency noise characteristics of vertical GaN PIN diodes, focusing on the effects of the diode design, current, and temperature. The as-grown and regrown diodes, with and without surface treatment, have been studied. The noise in most of the GaN devices had a characteristic 1/f spectrum at high and moderate currents, while some devices revealed generation-recombination bulges at low currents (f is the frequency). The predominant trend of the noise spectral density, S I , dependence on the current was S I ~ I. All tested GaN PIN diodes had rather low normalized noise spectral densities of 10 –18 –10 –16 cm 2 /Hz (f = 10 Hz) at the current density J = 1 A/cm 2 at room temperature. The noise temperature dependences at different currents revealed peaks at T = 375–400 K. Temperature, current, and frequency dependences of noise suggest that the noise mechanism is of the recombination origin. Here, we argue that the noise measurements at low currents can be used to efficiently assess the quality of GaN PIN diodes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

DarkNESS: A skipper-CCD nanosatellite for dark matter searches

The Dark matter Nanosatellite Equipped with Skipper Sensors (DarkNESS) deploys a recently developed skipper-CCD architecture with sub-electron readout noise in low Earth orbit (LEO) to investigate potential signatures of dark matter (DM). The mission addresses two interaction channels: electron recoils from strongly interacting sub-GeV DM and X-rays produced through decaying DM. Orbital observations avoid attenuation that limits ground-based measurements, extending sensitivity reach for both channels. The mission proceeds toward launch following laboratory validation of the instrument. A launch opportunity has been secured through Firefly Aerospace’s DREAM 2.0 program, awarded to the University of Illinois Urbana-Champaign (UIUC). As a result, this will constitute the first use of skipper-CCDs in space and evaluate their suitability for low-noise X-ray and single-photon detection in future space observatories.

Alpine, Phoenix [University of Illinois, Urbana-Ch↗
DOE OSTI2025

Improved receiver noise calibration for ADMX axion search: 4.54 to 5.41 μeV

Axions are a well-motivated candidate for dark matter. The preeminent method to search for axion dark matter is known as the axion haloscope, which makes use of the conversion of axions to photons in a large magnetic field. Because of the weak coupling of axions to photons, however, the expected signal strength is exceptionally small. To increase signal strength, many haloscopes make use of resonant enhancement and high gain amplifiers, while also taking measures to keep receiver noise as low as possible such as the use of dilution refrigerators and ultra-low-noise electronics. In this paper, we derive the theoretical noise model based on the sources of noise found within a typical axion haloscope receiver chain, using the Axion Dark Matter eXperiment (ADMX) as a case study. We present examples of different noise calibration measurements at 1280 MHz taken during ADMX’s most recent data-taking run. These new results shed light on a previously unidentified interaction between the cavity and Josephson Parametric Amplifier as well as provide a better understanding of the systematic uncertainty on the system noise temperature used in the axion search analysis for this data-taking run. Finally, the consistency between the measurements and the detailed model provide suggestions for future improvements within ADMX and other axion haloscopes to reach a lower noise temperature.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Flex-PCB Quench Antenna Developments at FNAL

We report flexible printed-circuit-board-based quench antenna arrays have been developed at FNAL since 2017. They proved to be low-noise, low-cost, sensitive, and non-invasive sensors for quench characterization in superconducting magnets, having the potential to extend even to quench detection. Starting with applications of small area sensors of this type, we have explored feasibility for operations at high pressure, and have invested in multi-channel quench antenna arrays covering the complete area of the innermost magnet layer of the conductor. We've also tested and optimized sensor geometry and relative orientations to increase sensitivity and spatial resolution. Beyond developments of warm and cold bore antennas, we've progressed to concepts which attach quench antennas to the conductor surfaces of accelerator magnets. Multiple programs and projects at FNAL and collaborating institutions benefited from this work already and our plans target further extensions of capabilities and applicability of these devices. In this paper we present the logic behind the development steps taken so far, status of our work and direction of near-term research on quench antennas at Fermilab.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

A Low Cost SIPM Evaluation and Control Prototyping System including accurate bias voltage generation, leakage current measurement, and temperature control using Peltier cooling

We describe an electronics system to operate SIPMs in the laboratory. The system is comprised of a single channel amplifier board (SIPM Amp) and a 4-channel control board to which up to 4 SIPM Amp boards can be connected. The control board supplies a common low voltage power for the amplifiers. All channels feature individually regulated bias and Peltier power voltages, along withPt10K RTD readout. A graphical user interface allows control of the bias voltages, amplifier voltage, Peltier voltages, and also provides for readback of leakage currents and other voltages. The GUI app has a feedback loop to measure the SIPM temperature (with the PT10K) and generate correction voltages to the Peltier to regulate the temperature. The temperatures, which can be achieved by Peltier cooling depend on the thermal design of the setup, the practical limit being about 50C below ambient. The SIPM Amp. board is a small (3x5cm) PCB that has a single SIPM readout channel. The SIPM scan be surface mounted on the pcb or connected to a 2-pin 0.100" socket. The area around the SIPM footprint is thermally isolated by perforations in the PCB. The RTD is located inside the thermal break. Onboard is BV and LV filtering. The 10X amplifier is based on MiniCircuits' GALI-S66+ integrated circuit, tweaked for a 6V power. The amplifier was selected for a combination of high bandwidth, low noise, and low power. An accoupled amplifier output is connected to an SMA connector. For best operation of this inverting amplifier the output signal should be in the range of 0 to -1V.The Amplifier board is connected to the Control board with a 10-conductor 0.025" pitch ribbon cable, carrying all the services. Peltier power for currents more than 1A should use a separate 2-contact connector.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

VeryFastCCD: a high frame rate soft X-ray detector

Direct X-ray detection in silicon has been transformative for scattering experiments in biology and materials science. While bump-bonded hybrid pixels have been attractive for hard X-ray detection, the challenge for single photon soft X-ray detection is sufficiently low noise. CCD structures on thick, high-resistivity silicon have been successfully used as sensors over the range of soft to hard X-rays at storage rings and FELs. The VeryFastCCD is a high frame rate, column-parallel CCD sensor with 48 μm pixels. Combined with 256-channel custom readout ASICs, frame rates of 5–10 kHz have been achieved with readout noise as low as 20 e and full-well capacity >4 × 10 5 e/pixel. Thin (10 nm and 100 nm) entrance window contact processes have also been developed which provide >85% quantum efficiency for 285 eV X-rays. Systems are currently being developed for several beamlines at the upgraded Advanced Light Source.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

DarkNESS: A skipper-CCD NanoSatellite for Dark Matter Searches

The Dark matter Nanosatellite Equipped with Skipper Sensors (DarkNESS) deploys a recently developed skipper-CCD architecture with sub-electron readout noise in low Earth orbit (LEO) to investigate potential signatures of dark matter (DM). The mission addresses two interaction channels: electron recoils from strongly interacting sub-GeV DM and X-rays produced through decaying DM. Orbital observations avoid attenuation that limits ground-based measurements, extending sensitivity reach for both channels. The mission proceeds toward launch following laboratory validation of the instrument. A launch opportunity has been secured through Firefly Aerospace's DREAM 2.0 program, awarded to the University of Illinois Urbana-Champaign (UIUC). This will constitute the first use of skipper-CCDs in space and evaluate their suitability for low-noise X-ray and single-photon detection in future space observatories.

Alpine, Phoenix [Illinois U., Urbana (main)] (ORCI↗
DOE OSTI2023

Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

The properties of defects in n-p-n Si bipolar junction transistors (BJTs) caused by 17 MeV Si ions are investigated via current-voltage, low-frequency noise, and deep-level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent low-frequency 1/ f noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Here our results show that DLTS and 1/ f noise measurements can provide complementary information about defects in linear bipolar devices.

42 ENGINEERING↗
DOE OSTI2023

Low-frequency noise in β-(Al x Ga1 −x )2O3 Schottky barrier diodes

We report on the low-frequency electronic noise in β-(AlxGa1−x)2O3 Schottky barrier diodes. The noise spectral density reveals 1/f dependence, characteristic of the flicker noise, with superimposed Lorentzian bulges at the intermediate current levels (f is the frequency). The normalized noise spectral density in such diodes was determined to be on the order of 10−12 cm2/Hz (f = 10 Hz) at 1 A/cm2 current density. At the intermediate current regime, we observed the random telegraph signal noise, correlated with the appearance of Lorentzian bulges in the noise spectrum. The random telegraph signal noise was attributed to the defects near the Schottky barrier. The defects can affect the local electric field and the potential barrier and, correspondingly, impact the electric current. The obtained results help in understanding the noise in Schottky barrier diodes made of ultra-wide bandgap semiconductors and can be used for the material and device quality assessment.

Physics↗
DOE OSTI2023

Temperature Dependence of Low‐Frequency Noise Characteristics of NiO x /β‐Ga 2 O 3 p–n Heterojunction Diodes

Temperature dependence of the low-frequency electronic noise in NiO x /β-Ga 2 O 3 p–n heterojunction diodes is reported. The noise spectral density is of the 1/f-type near room temperature but shows signatures of Lorentzian components at elevated temperatures and at higher current levels (f is the frequency). It is observed that there is an intriguing non-monotonic dependence of the noise on temperature near T = 380 K. The Raman spectroscopy of the device structure suggests material changes, which results in reduced noise above this temperature. The normalized noise spectral density in such diodes is determined to be on the order of 10 −14 cm 2 Hz −1 (f = 10 Hz) at 0.1 A cm −2 current density. In terms of the noise level, NiO x /β-Ga 2 O 3 p–n diodes perform excellently for new technology and occupy an intermediate position among devices of various designs implemented with different ultra-wide-bandgap semiconductors. The obtained results are important for understanding the electronic properties of NiO x /β-Ga 2 O 3 heterojunctions and contribute to the development of noise spectroscopy as the quality assessment tool for new electronic materials and device technologies.

1/f noise↗
DOE OSTI2020

Molybdenum Contacts to MoS 2 Field‐Effect Transistors: Schottky Barrier Extraction, Electrical Transport, and Low‐Frequency Noise

MoS 2 has great interest for nanoscale electronic devices, including transistors and sensors. Defect‐free structure, clean interface with the gate dielectric, and metals with suitable metal–semiconductor junctions are key for reliable devices. Molybdenum is shown as an excellent electrode for MoS 2 field‐effect transistors (FETs), but the correlation among device current, field‐effect mobility, and the low‐frequency noise (LFN) with number of atomic layers is not studied. Furthermore, the impact of Mo/MoS 2 Schottky barrier on electronic injection and scattering in the device needs to be understood. Herein, by studying the FETs with channels of different numbers of atomic‐layer thicknesses, it is shown that a molybdenum metal contact to MoS 2 provides reliable current injection with low Schottky barrier height, low contact resistance, low electron–phonon scattering, and negligible impurity scattering. The mobility and LFN are optimal at a channel thickness of ≈12 atomic layers, which is consistent with the “mobility maximum window” in MoS 2 transistors with prior studies using other contact metals.

Kwon, Jiseok↗
DOE OSTI2025

Photonics Breakthroughs 2024: Narrow-Linewidth Lasers in the Visible and Near-Infrared

Narrow-linewidth lasers enable a variety of high-precision applications, such as sensing, optical clocks, and microwave frequency generation. Advances in photonic integration in the last decade led to the development of ultra-low-noise integrated semiconductor lasers, mostly in the telecom wavelength range. In recent years, the demand for high-performance lasers at shorter wavelengths skyrocketed, driven by applications in sensing and atom trapping. Low-noise lasers are of particular importance in this spectral range, as they are essential for optical clocks. Here, we will review recent progress in narrow-linewidth lasers at shorter wavelengths, present results on a hybrid-integrated low-noise laser at 780 nm and discuss the perspectives and challenges of high-performance semiconductor lasers in the visible and near-infrared.

Prokoshin, Artem [King Abdullah University of Scie↗
DOE OSTI2025

Injection Locking of Gigahertz‐Frequency Surface Acoustic Wave Phononic Crystal Oscillator

Low-noise gigahertz (GHz) frequency sources are essential for applications in signal processing, sensing, and telecommunications. Surface acoustic wave (SAW) resonator-based oscillators offer compact form factors and low-phase noise due to their short mechanical wavelengths and high-quality (Q) factors. However, their small footprint makes them vulnerable to environmental variation, resulting in their poor long-term frequency stability. Injection locking is widely used to suppress frequency drift of lasers and oscillators by synchronizing to an ultra-stable reference. Here, injection locking of a 1-GHz SAW phononic-crystal oscillator is demonstrated, achieving 40-dB phase noise reduction at low offset frequencies and unperturbed low noise at large offset frequencies. Compared to a free-running SAW oscillator, which typically exhibits frequency drifts of several hundred hertz over minutes, the injection-locked oscillator reduces the frequency deviation to below 0.35 Hz. The locking range and oscillator dynamics is also investigated in the injection pulling region. The demonstrated injection-locked SAW oscillator could find applications in high-performance portable telecommunications and sensing systems.

injection locking↗
DOE OSTI2023

Fast Single-Quantum Measurement with a Multi-Amplifier Sensing Charge-Coupled Device

A novel readout architecture that uses multiple non-destructive floating-gate amplifiers to achieve sub-electron readout noise in a thick, fully-depleted silicon detector is presented. This Multi-Amplifier Sensing Charge-Coupled Device (MAS-CCD) can perform multiple independent charge measurements with each amplifier; measurements with multiple amplifiers can then be combined to further reduce the readout noise. The readout speed of this detector scales roughly linearly with the number of amplifiers without requiring segmentation of the active area. The performance of this detector is demonstrated, emphasizing the ability to resolve individual quanta and the ability to combine measurements across amplifiers to reduce readout noise. The unprecedented low noise and fast readout of the MAS-CCD make it a unique technology for astronomical observations, quantum imaging, and low-energy interacting particles.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

FALCON readout channel for X-ray ptychography applications

This work reports the current state of the development of a pixelated readout for nanometer resolution X-ray ptychography applications. A very dense, low-noise and low-power pixel developed in a commercial 65nm CMOS technology is envisioned for such applications, targeting a pixel area of 150 μm × 150 μm, an overall noise of 200e- rms and a power consumption of 150μW per pixel. In the paper, an introduction to the application and an overview of the experimental setup are given, the designed frontend channel is reported and revised in its components and simulation results of the schematic-level design are shown and discussed.

Lazzaroni, Paolo↗
DOE OSTI2020

Backscatter-Immune Injection-Locked Brillouin Laser in Silicon

As self-sustained oscillators, lasers possess the unusual ability to spontaneously synchronize. These nonlinear dynamics are the basis for a simple yet powerful stabilization technique known as injection locking, in which a laser’s frequency and phase can be controlled by an injected signal. Because of its inherent simplicity and favorable noise characteristics, injection locking has become a workhorse for coherent amplification and high-fidelity signal synthesis in applications ranging from precision atomic spectroscopy to distributed sensing. Within integrated photonics, however, these injection-locking dynamics remain relatively untapped—despite significant potential for technological and scientific impact. In this work, we demonstrate injection locking in a silicon photonic Brillouin laser. Injection locking of this monolithic device is remarkably robust, allowing us to tune the laser emission by a significant fraction of the Brillouin gain bandwidth. Harnessing these dynamics, we demonstrate amplification of small signals by more than 23 dB. Moreover, we demonstrate that the injection-locking dynamics of this system are inherently nonreciprocal, yielding unidirectional control and backscatter immunity in an all-silicon system. This device physics opens the door to strategies for phase-noise reduction, low-noise amplification, and backscatter immunity in silicon photonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Novel Signatures Beyond the Standard Model: From Extreme Environments to Precision Measurements

Most of our universe is dark. It is dark literally—visible matter makes up only 5% of the energy density—and conceptually, as many outstanding questions remain unsolved. The discovery of particle dark matter would shed light on our dark universe and throw open a window on the highest energy scales. This research made progress toward dark matter and new particle searches in three ways. Extreme compact objects, such as black holes, neutron stars, and stellar cores, can parametrically increase the production rates of feebly interacting particles and yield observable signatures. Specifically, a process known as superradiance leads to exponential growth of the number of ultralight particles gravitationally bound to rotating black holes, and turns astrophysical black holes into particle detectors. This research broadened the scope of applicability of superradiance studies to particles with a wide range of interactions and masses, predicting multi messenger signals. When ultralight particles are produced as dark matter in the early universe, they can be detected directly in laboratory experiments. However, these feebly interacting particles lead to small signals that are inevitably difficult to tease out from backgrounds; their detection requires the theoretical development of unique signatures that can be searched for in low-noise experiments. Some dark matter particles could be detectable with thin film metamaterials combined with low noise single-photon detectors. This research develop the theoretical framework and supported experimental efforts for ambitious searches for a wider class of ultralight particles. Overall, the outcome of this theoretical particle physics program developed novel signatures of new dark matter particles, and thereby expanded the particle parameter space which can be explored with astrophysical observations and precision experiments.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗