A low-noise transistorized seismic amplifier
Transistor low noise seismic amplifier for fractional mv signals at ELF in ocean bottom seismographs and magnetic variometer
TRANSISTOR AMPLIFIER↗
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Satellite Communications Technology Database
The Satellite Communications Technology Database is a compilation of data on state-of-the-art Ka-band technologies current as of January 2000. Most U.S. organizations have not published much of their Ka-band technology data, and so the great majority of this data is drawn largely from Japanese, European, and Canadian publications and Web sites. The data covers antennas, high power amplifiers, low noise amplifiers, MMIC devices, microwave/IF switch matrices, SAW devices, ASIC devices, power and data storage. The data herein is raw, and is often presented simply as the download of a table or figure from a site, showing specified technical characteristics, with no further explanation.
Source record↗
Ultra Small Aperture Terminal for Ka-Band SATCOM
An ultra small aperture terminal (USAT) at Ka-band frequency has been developed by Lewis Research Center (LeRC) for data rates up to 1.5 Mbps in the transmit mode and 40 Mbps in receive mode. The terminal consists of a 35 cm diameter offset-fed parabolic antenna which is attached to a solid state power amplifier and low noise amplifier. A single down converter is used to convert the Ka-band frequency to 70 MHz intermediate frequency (IF). A variable rate (9.6 Kbps to 10 Mbps) commercial modem with a standard RS-449/RS-232 interface is used to provide point-to-point digital services. The terminal has been demonstrated numerous times using the Advanced Communications Technology Satellite (ACTS) and the 4.5 in Link Evaluation Terminal (LET) in Cleveland. A conceptual design for an advanced terminal has also been developed. This advanced USAT utilizes Microwave Monolithic Integrated Circuit (MMIC) and flat plate array technologies. This terminal will be self contained in a single package which will include a 1 watt solid state amplifier (SSPA), low noise amplifier (LNA) and a modem card located behind the aperture of the array. The advanced USAT will be light weight, transportable, low cost and easy to point to the satellite. This paper will introduce designs for the reflector based and array based USAT's.
Acosta, Roberto↗
The 30-GHz monolithic receive module
The fourth year progress is described on a program to develop a 27.5 to 30 GHz GaAs monolithic receive module for spaceborne-communication antenna feed array applications, and to deliver submodules for experimental evaluation. Program goals include an overall receive module noise figure of 5 dB, a 30 dB RF to IF gain with six levels of intermediate gain control, a five bit phase shifter, and a maximum power consumption of 250 mW. Submicron gate length single and dual gate FETs are described and applied in the development of monolithic gain control amplifiers and low noise amplifiers. A two-stage monolithic gain control amplifier based on ion implanted dual gate MESFETs was designed and fabricated. The gain control amplifier has a gain of 12 dB at 29 GHz with a gain control range of over 13 dB. A two-stage monolithic low noise amplifier based on ion implanted MESFETs which provides 7 dB gain with 6.2 dB noise figure at 29 GHz was also developed. An interconnected receive module containing LNA, gain control, and phase shifter submodules was built using the LNA and gain control ICs as well as a monolithic phase shifter developed previously under this program. The design, fabrication, and evaluation of this interconnected receiver is presented. Progress in the development of an RF/IF submodule containing a unique ion implanted diode mixer diode and a broadband balanced mixer monolithic IC with on-chip IF amplifier and the initial design of circuits for the RF portion of a two submodule receiver are also discussed.
Bauhahn, P.↗
W-Band InP Wideband MMIC LNA With 30K Noise Temperature
This paper describes a millimeter wave low noise amplifier with extraordinary low noise, low power consumption, and wide frequency range.
low↗
Tests of Low-Noise MMIC Amplifier Module at 290 to 340 GHz
A document presents data from tests of a low-noise amplifier module operating in the frequency range from 290 to 340 GHz said to be the highest-frequency low-noise, solid-state amplifier ever developed. The module comprised a three-stage monolithic microwave integrated circuit (MMIC) amplifier integrated with radial probe MMIC/waveguide transitions and contained in a compact waveguide package, all according to the concepts described in the immediately preceding article and in the referenced prior article, "Integrated Radial Probe Transition From MMIC to Waveguide" (NPO-43957), NASA Tech Briefs Vol. 31, No. 5 (May 2007), page 38. The tests included measurements by the Y-factor method, in which noise figures are measured repeatedly with an input noise source alternating between an "on" (hot-load) condition and an "off" (cold-load) condition. (The Y factor is defined as the ratio between the "on" and "off" noise power levels.) The test results showed that, among other things, the module exhibited a minimum noise figure of about 8.7 dB at 325 GHz and that the gain at that frequency under the bias conditions that produced the minimum noise figure was between about 9 and 10 dB.
Gaier, Todd↗
Amplifier Module for 260-GHz Band Using Quartz Waveguide Transitions
Packaging of MMIC LNA (monolithic microwave integrated circuit low-noise amplifier) chips at frequencies over 200 GHz has always been problematic due to the high loss in the transition between the MMIC chip and the waveguide medium in which the chip will typically be used. In addition, above 200 GHz, wire-bond inductance between the LNA and the waveguide can severely limit the RF matching and bandwidth of the final waveguide amplifier module. This work resulted in the development of a low-loss quartz waveguide transition that includes a capacitive transmission line between the MMIC and the waveguide probe element. This capacitive transmission line tunes out the wirebond inductance (where the wire-bond is required to bond between the MMIC and the probe element). This inductance can severely limit the RF matching and bandwidth of the final waveguide amplifier module. The amplifier module consists of a quartz E-plane waveguide probe transition, a short capacitive tuning element, a short wire-bond to the MMIC, and the MMIC LNA. The output structure is similar, with a short wire-bond at the output of the MMIC, a quartz E-plane waveguide probe transition, and the output waveguide. The quartz probe element is made of 3-mil quartz, which is the thinnest commercially available material. The waveguide band used is WR4, from 170 to 260 GHz. This new transition and block design is an improvement over prior art because it provides for better RF matching, and will likely yield lower loss and better noise figure. The development of high-performance, low-noise amplifiers in the 180-to- 700-GHz range has applications for future earth science and planetary instruments with low power and volume, and astrophysics array instruments for molecular spectroscopy. This frequency band, while suitable for homeland security and commercial applications (such as millimeter-wave imaging, hidden weapons detection, crowd scanning, airport security, and communications), also has applications to future NASA missions. The Global Atmospheric Composition Mission (GACM) in the NRC Decadel Survey will need low-noise amplifiers with extremely low noise temperatures, either at room temperature or for cryogenic applications, for atmospheric remote sensing.
Padmanabhan, Sharmila↗
W-Band InP Wideband MMIC LNA with 30K Noise Temperature
This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.
Weinreb, S.↗
Cryogenic Low Noise MMIC Amplifiers for U-Band (40-60 GHz)
In this work, we describe monolithic millimeter-wave integrated circuit (MMIC) Low Noise Amplifier (LNA) and mixer designs for U-Band, also known as the WR19 waveguide band (40-60 GHz). The LNAs were fabricated in NGC’s 35 nm InP HEMT MMIC process. The MMICs were packaged in WR19 waveguide housings and tested for noise, both at room temperature and cryogenically. We present the results, including a comparison to the state-of-the-art, and discuss applications for amplifiers in this frequency range. To date, these are the first cryogenic 35 nm InP MMIC results covering the 40-60 GHz range. We achieved a noise temperature less than 30 K over the 40-60 GHz range, when the amplifiers were cryogenically cooled. These results are comparable with other results in the literature, and we believe are the lowest reported for MMICs in the 50-60 GHz range.
MMIC↗
Wideband low noise maser amplifiers
Iron doped rutile wideband maser amplifier with low signal-to-noise ratio
Hughes, W. E.↗
Cooled Low-Noise HEMT Microwave Amplifiers
Prototype cooled low-noise microwave amplifiers based on high-electron-mobility transistors (HEMT's) considered as replacements for cooled ruby masers used as low-noise receiver-front-end amplifiers in communications, radio science, radar systems, radio astronomy, and telemetry. HEMT amplifier operates at 12 K, requires less cooling power and operates at lower cost with simpler, more-reliable cooling system.
Bautista, J. Javier↗
Low-Noise MMIC Amplifiers for 120 to 180 GHz
Three-stage monolithic millimeter-wave integrated-circuit (MMIC) amplifiers capable of providing useful amounts of gain over the frequency range from 120 to 180 GHz have been developed as prototype low-noise amplifiers (LNAs) to be incorporated into instruments for sensing cosmic microwave background radiation. There are also potential uses for such LNAs in electronic test equipment, passive millimeter- wave imaging systems, radar receivers, communication receivers, and systems for detecting hidden weapons. The main advantage afforded by these MMIC LNAs, relative to prior MMIC LNAs, is that their coverage of the 120-to-180-GHz frequency band makes them suitable for reuse in a wider variety of applications without need to redesign them. Each of these MMIC amplifiers includes InP transistors and coplanar waveguide circuitry on a 50- mthick chip (see Figure 1). Coplanar waveguide transmission lines are used for both applying DC bias and matching of input and output impedances of each transistor stage. Via holes are incorporated between top and bottom ground planes to suppress propagation of electromagnetic modes in the substrate. On the basis of computational simulations, each of these amplifiers was expected to operate with a small-signal gain of 14 dB and a noise figure of 4.3 dB. At the time of writing this article, measurements of noise figures had not been reported, but on-chip measurements had shown gains approaching their simulated values (see Figure 2).
Pukala, David↗
X-Band Ultra-Low Noise Maser Amplifier Performance
Noise temperature measurements of an 8440 MHz ultra-low noise maser amplifier (ULNA) have been performed at sub-atmospheric, liquid helium temperatures. The traveling wave maser operated while immersed in a liquid helium bath. The lowest input noise temperature measured was 1.23 plus or minus 0.16 K at a physical temperature of 1.60 kelvin. At this physical temperature the observed gain per unit length of ruby was 4.6 dB/cm, and the amplifier had a 3 dB-bandwidth of 76 MHz.
ultra-low noise maser amplifier X-band maser syste↗
Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph
A single-pixel prototype of a W-band detector module with a digital back-end was developed to serve as a building block for large focal-plane arrays of monolithic millimeter-wave integrated circuit (MMIC) detectors. The module uses low-noise amplifiers, diode-based mixers, and a WR10 waveguide input with a coaxial local oscillator. State-of-the-art InP HEMT (high electron mobility transistor) MMIC amplifiers at the front end provide approximately 40 dB of gain. The measured noise temperature of the module, at an ambient temperature of 300 K, was found to be as low as 450 K at 95 GHz. The modules will be used to develop multiple instruments for astrophysics radio telescopes, both on the ground and in space. The prototype is being used by Stanford University to characterize noise performance at cryogenic temperatures. The goal is to achieve a 30-50 K noise temperature around 90 GHz when cooled to a 20 K ambient temperature. Further developments include characterization of the IF in-phase (I) and quadrature (Q) signals as a function of frequency to check amplitude and phase; replacing the InP low-noise amplifiers with state-of-the-art 35-nm-gate-length NGC low-noise amplifiers; interfacing the front-end module with a digital back-end spectrometer; and developing a scheme for local oscillator and IF distribution in a future array. While this MMIC is being developed for use in radio astronomy, it has the potential for use in other industries. Applications include automotive radar (both transmitters and receivers), communication links, radar systems for collision avoidance, production monitors, ground-penetrating sensors, and wireless personal networks.
Kangaslahti, Pekka P.↗
RF MEMS Phase Shifters and their Application in Phase Array Antennas
Electronically scanned arrays are required for space based radars that are capable of tracking multiple robots, rovers, or other assets simultaneously and for beam-hopping communication systems between the various assets. ^Traditionally, these phased array antennas used GaAs Monolithic Microwave Integrated Circuit (MMIC) phase shifters, power amplifiers, and low noise amplifiers to amplify and steer the beam, but the development of RF MEMS switches over the past ten years has enabled system designers to consider replacing the GaAs MMIC phase shifters with RF Micro-Electro Mechanical System (MEMS) phase shifters. In this paper, the implication of replacing the relatively high loss GaAs MMICs with low loss MEMS phase shifters is investigated.
Scardelletti, Maximilian↗
An experimental 20/30 GHz communications satellite conceptual design employing multiple-beam paraboloid reflector antennas
An experimental 20/30 GHz communications satellite conceptual design is described which employs multiple-beam paraboloid reflector antennas coupled to a TDMA transponder. It is shown that the satellite employs solid state GaAs FET power amplifiers and low noise amplifiers while signal processing and switching takes place on-board the spacecraft. The proposed areas to be served by this satellite would be the continental U.S. plus Alaska, Hawaii, Puerto Rico, and the Virgin Islands, as well as southern Canada and Mexico City. Finally, attention is given to the earth stations which are designed to be low cost.
Goldman, A. M., Jr.↗
Low noise buffer amplifiers and buffered phase comparators for precise time and frequency measurement and distribution
Extremely low noise, high performance, wideband buffer amplifiers and buffered phase comparators were developed. These buffer amplifiers are designed to distribute reference frequencies from 30 KHz to 45 MHz from a hydrogen maser without degrading the hydrogen maser's performance. The buffered phase comparators are designed to intercompare the phase of state of the art hydrogen masers without adding any significant measurement system noise. These devices have a 27 femtosecond phase stability floor and are stable to better than one picosecond for long periods of time. Their temperature coefficient is less than one picosecond per degree C, and they have shown virtually no voltage coefficients.
Eichinger, R. A.↗
Phase shifter technology assessment - Prospects and applications
Capabilities and limitations of MMIC phase shifter technology at microwave and millimeter wave frequencies are reviewed. MMIC-based phase arrays make it possible to integrate active elements at the array face, i.e., to incorporate transmit power amplifiers and/or low noise amplifiers at each antenna element. Active elements make it possible to increase power efficiency and reliability and provide graceful degradation. Monolithic integration of the various transmit/receive functions including phase shifting is considered to be feasible through at least the lower millimeter-wave frequency range (about 30-100 GHz). MMIC integration also allows more flexibility in array design including those that are intended for airborne conformal applications.
Sokolov, Vladimir↗