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At least 55 records · Page 3

Performance of a wideband GaAs low-noise amplifier at cryogenic temperatures

The gain and noise figure performance of a GaAs amplifier at cryogenic temperatures has been studied. Results obtained indicate that a lower noise figure and a higher gain are induced by decreasing the temperature, while no significant change in the input 1-dB compression point is observed. Repeated temperature cycling had no adverse effect on the amplifier performance.

Toncich, S. S.↗

Noise and Bandwidth Measurements of Diffusion-Cooled Nb Hot-Electron Bolometer Mixers at Frequencies Above the Superconductive Energy Gap

Diffusion-cooled Nb hot-electron bolometer (HEB) mixers have the potential to simultaneously achieve high intermediate frequency (IF) bandwidths and low mixer noise temperatures for operation at THz frequencies (above the superconductive gap energy). We have measured the IF signal bandwidth at 630 GHz of Nb devices with lengths L = 0.3, 0.2, and 0.1 micrometer in a quasioptical mixer configuration employing twin-slot antennas. The 3-dB EF bandwidth increased from 1.2 GHz for the 0.3 gm long device to 9.2 GHz for the 0.1 gm long device. These results demonstrate the expected 1/L squared dependence of the IF bandwidth at submillimeter wave frequencies for the first time, as well as the largest EF bandwidth obtained to date. For the 0.1 gm device, which had the largest bandwidth, the double sideband (DSB) noise temperature of the receiver was 320-470 K at 630 GHz with an absorbed LO power of 35 nW, estimated using the isothermal method. A version of this mixer with the antenna length scaled for operation at 2.5 THz has also been tested. A DSB receiver noise temperature of 1800 plus or minus 100 K was achieved, which is about 1,000 K lower than our previously reported results. These results demonstrate that large EF bandwidth and low-noise operation of a diffusion-cooled HEB mixer is possible at THz frequencies with the same device geometry.

Wyss, R. A.↗

Performance of NbN superconductive tunnel junctions as SIS mixers at 205 GHz

Small area (less than 1 sq micron), high-current-density NbN/MgO/NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 sq micron and critical current density of 5-10 kA/sq cm are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/sq micron and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 sq microns and critical current density of 18-25 kA/sq cm have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.

Mcgrath, W. R.↗

Prospects for very deep space optical communication using photon-counting links

An investigation is conducted regarding the feasibility to use an optical communication system in connection with space missions involving a study of stars and, possibly, planetary systems in the vicinity of the solar system. A possible candidate for the considered kind of mission would be Barnard's Star, at six light years distance. Pierce et al. (1981), have shown that the capacity of a photon-counting link in the presence of thermal noise at low temperature is essentially the same as for microwave. The conducted investigation assumes the employment of a pulse position modulation scheme limited by technology to approximately 1,000,000 positions. The use of an optical communication system similar to the considered type is found to be very likely for the contemplated kind of space mission.

Posner, E. C.↗

Charge Sharing and Charge Loss in a Cadmium-Zinc-Telluride Fine-Pixel Detector Array

Because of its high atomic number, room temperature operation, low noise, and high spatial resolution a Cadmium-Zinc-Telluride (CZT) multi-pixel detector is ideal for hard x-ray astrophysical observation. As part of on-going research at MSFC (Marshall Space Flight Center) to develop multi-pixel CdZnTe detectors for this purpose, we have measured charge sharing and charge loss for a 4x4 (750micron pitch), lmm thick pixel array and modeled these results using a Monte-Carlo simulation. This model was then used to predict the amount of charge sharing for a much finer pixel array (with a 300micron pitch). Future work will enable us to compare the simulated results for the finer array to measured values.

Gaskin, J. A.↗

Low SWaP Semiconductor Laser Transmitter Modules For ASCENDS Mission Applications

The National Research Council's (NRC) Decadal Survey (DS) of Earth Science and Applications from Space has identified the Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) as an important atmospheric science mission. NASA Langley Research Center, working with its partners, is developing fiber laser architecture based intensity modulated CW laser absorption spectrometer for measuring XCO2 in the 1571 nm spectral band. In support of this measurement, remote sensing of O2 in the 1260 nm spectral band for surface pressure measurements is also being developed. In this paper, we will present recent progress made in the development of advanced transmitter modules for CO2 and O2 sensing. Advanced DFB seed laser modules incorporating low-noise variable laser bias current supply and low-noise variable temperature control circuit have been developed. The 1571 nm modules operate at >80 mW and could be tuned continuously over the wavelength range of 1569-1574nm at a rate of 2 pm/mV. Fine tuning was demonstrated by adjusting the laser drive at a rate of 0.7 pm/mV. Heterodyne linewidth measurements have been performed showing linewidth ~200 kHz and frequency jitter ~75 MHz. In the case of 1260 nm DFB laser modules, we have shown continuous tuning over a range of 1261.4 - 1262.6 nm by changing chip operating temperature and 1261.0 - 1262.0 nm by changing the laser diode drive level. In addition, we have created a new laser package configuration which has been shown to improve the TEC coefficient of performance by a factor of 5 and improved the overall efficiency of the laser module by a factor of 2.

Prasad, Narasimha S.↗

TPSAS-NF1676L-13946-DND

This work has sought to develop distributed feedback (DFB) diode-laser concepts and technologies necessary to facilitate NASA's upcoming Active Sensing of CO2 Emissions over Nights, Days, and Seasons (ASCENDS) mission. A DFB laser transmitter module operating at 1571nm, incorporating a low-noise variable laser bias current supply and low-noise variable temperature control circuit, has been developed and extensively tested. These modules operate at >80mW and could be tuned continuously over the wavelength range of 1569-1574nm at a rate of 2pm/mV. Fine tuning was demonstrated by adjusting the laser drive at a rate of 0.7pm/mV. Heterodyne linewidth measurements have been performed showing linewidth ~200kHz and frequency jitter ~75MHz. DFB laser transmitter modules operating at the absorption line of 1262nm have also been built and tested. We have shown continuous tuning over a range of 1261.4-1262.6nm by changing chip operating temperature and 1261.0-1262.0nm by changing the laser diode drive level. In addition, a new laser package configuration has been developed. This new configuration has been shown to improve the TEC coefficient of performance by a factor of 5 and improved the overall efficiency of the laser transmitter module by a factor of 2.

Narasimha S Prasad↗

RFI receiver

An S-band radio frequency interference (RFI) receiver to analyze and identify sources of RFI problems in the Deep Space Network DSN tracking stations is described. The RFI receiver is a constant gain, double conversion, open loop receiver with dual sine/cosine channel outputs, providing a total of 20 MHZ monitoring capability. This receiver is computer controlled using a MODCOMP II miniprocessor. The RFI receiver has been designed to operate at a 150 Kelvin system noise temperature accomplished by cascading two low noise field effect transistor (FET) amplifiers for the receiver front-end. The first stage low noise FET amplifier is mounted at the feed horn to minimize any cable losses to achieve a lower system noise temperature. The receiver is tunable over the frequency range of 2150 to 2450 MHz in both sine/cosine output channels with a resolution of 100 kHz.

Lay, R.↗

Low-noise 115-GHz receiver using superconducting tunnel junctions

A 110-118-GHz receiver based on a superconducting quasiparticle tunnel junction mixer is described. The single-sideband noise temperature is as low as 68 + or - 3 K. This is nearly twice the sensitivity of any other receiver at this frequency. The receiver was designed using a low-frequency scale model in conjunction with the quantum mixer theory. A scaled version of the receiver for operation at 46 GHz has a single-sideband noise temperature of 55 K. The factors leading to the success of this design are discussed.

Pan, S.-K.↗

Minimizing noise-temperature measurement errors

An analysis of noise-temperature measurement errors of low-noise amplifiers was performed. Results of this analysis can be used to optimize measurement schemes for minimum errors. For the cases evaluated, the effective noise temperature (Te) of a Ka-band maser can be measured most accurately by switching between an ambient and a 2-K cooled load without an isolation attenuator. A measurement accuracy of 0.3 K was obtained for this example.

Stelzried, C. T.↗

W-Band InP Wideband MMIC LNA with 30K Noise Temperature

This paper describe a millimeter wave low noise amplifier with extraordinary low noise, low consumption, and wide frequency range. These results are achieved utilizing state-of-the-art InP HEMT transistors coupled with CPW circuit design. The paper describes the transistor models, modeled and measured on-wafer and in-module results at both 300K am 24K operating temperatures for many samples of the device.

Weinreb, S.↗

Performance of the Micropower Voltage Reference ADR3430 Under Extreme Temperatures

Electronic systems designed for use in space exploration systems are expected to be exposed to harsh temperatures. For example, operation at cryogenic temperatures is anticipated in space missions such as polar craters of the moon (-223 C), James Webb Space Telescope (-236 C), Mars (-140 C), Europa (-223 C), Titan (-178 C), and other deep space probes away from the sun. Similarly, rovers and landers on the lunar surface, and deep space probes intended for the exploration of Venus are expected to encounter high temperature extremes. Electronics capable of operation under extreme temperatures would not only meet the requirements of future spacebased systems, but would also contribute to enhancing efficiency and improving reliability of these systems through the elimination of the thermal control elements that present electronics need for proper operation under the harsh environment of space. In this work, the performance of a micropower, high accuracy voltage reference was evaluated over a wide temperature range. The Analog Devices ADR3430 chip uses a patented voltage reference architecture to achieve high accuracy, low temperature coefficient, and low noise in a CMOS process [1]. The device combines two voltages of opposite temperature coefficients to create an output voltage that is almost independent of ambient temperature. It is rated for the industrial temperature range of -40 C to +125 C, and is ideal for use in low power precision data acquisition systems and in battery-powered devices. Table 1 shows some of the manufacturer s device specifications.

Patterson, Richard L.↗

Brief characterization of germanium junction field effect transistors (FETs) at 77, 4, and 1.8 K

In the case of modern infrared focal planes, one of the major problems is related to the noise contribution of the cooled, impedance-matching device used as the preamplifier stage in the detector electronics system. An ideal preamp device should have the low-noise advantages of a buried-channel device and operate isothermally with the low-temperature detector array. The Ge JFET might provide this ideal device. A testing program with Ge JFETs is discussed. It is concluded that germanium JFETs offer an attractive alternative for cryogenic preamplifier designs. They operate well with high transconductance and low noise at LHe temperatures. It is believed that these devices point the way for the development of large, integrated-array, long wavelength, infrared focal planes which incorporate germanium detectors, germanium load resistors, and germanium preamplifiers within the same monolithic structure.

Arentz, R. F.↗

Real time thermal imaging of high temperature semiconductor melts

A real time thermal imaging system with temperature resolution better than + or - 1 C and spatial resolution of better than 0.5 mm was developed and applied to the analysis of melt surface thermal field distributions in both Czochralski and liquid encapsulated Czochralski (LEC) growth configurations. The melt is viewed in near normal incidence by a high resolution charge coupled device camera to which is attached a very narrow bandpass filter. The resulting image is digitized and processed using a pipelined pixel processor operating at an effective 40 million operations per second thus permitting real time high frequency spatial and temporal filtering of the high temperature scene. A multi-pixel averaging algorithm was developed which permits localized, low noise sensing of temperature variations at any location in the hot zone as a function of time. This signial is used to implement initial elements of a feedforward growth control scheme which is aimed at reducing disturbances to the melt caused by the batch nature of the growth process. The effect of magnetic melt stabilization on radial melt temperature distributions was measured using this technique. Problems associated with residual internal reflections and non-optimized path geometry are discussed.

Wargo, Michael J.↗