Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments
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Qingyun Xie↗
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Results for “materials for devices”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Material handling device Patent
Device which separates and screens particles of soil samples for vidicon viewing in vacuum and reduced gravity environments
Ritchie, D. G.↗
Ultrasonic and optical evaluation of surgical implant materials and devices. A durability study of pericardial bioprostheses
Laser Doppler Anemometry (LDA) and accelerated fatigue testing were used in an attempt to assess the durability of two cardiac value bioprostheses. The LDA system was used to monitor the function of the cardiac valves over time. This was done through flow characterization in an aortic flow chamber, designed to closely simulate in vivo conditions, both in the near vicinity (sinuses of valsalva region) and also somewhat downstream (aortic region) from the values. The accelerated fatigue tester was operated by opening and closing the valves at a rate of 1300 R.P.M., about 18 x the normal rate. The results from the two test valves indicate a definite change in the flow characteristics downstream from the valve after certain accelerated test intervals. The high velocity cross-sectional flow area seems to increase over time in use, causing a decrease in the peak velocity. The tissue became more flaccid in certain areas, and tears were apparent at about 9.4 million cycles for the Ionescu-Shiley valve and at 24 million cycles for the Carpentier-Edwards valve. The use of Doppler ultrasound as a technique for monitoring the function of bioprostheses over time in vivo is also discussed.
Schuster, P. R.↗
Sublimation measurements and analysis of high temperature thermoelectric materials and devices
High temperature thermoelectric device sublimation effects are compared for rare earth sulfides, selenides, and state-of-the-art Si-Ge alloys. Although rare earth calcogenides can potentially exhibit superior sublimation characteristics, the state-of-the-art Si-Ge alloy with silicon nitride sublimation-inhibitive coating has been tested to 1000 C. Attention is given to the ceramic electrolyte cells, forming within electrical and thermal insulation, which affect leakage conductance measurements in Si-Ge thermoelectric generators.
Shields, V.↗
Environmental test program for superconducting materials and devices
This report is divided into two parts. The first dealing with work involved with Clemson University and the second with the results from Westinghouse/Savannah River. Both areas of work involved low noise, low thermal conductivity superconducting grounding links used in the NASA-sponsored Spectroscopy of the Atmosphere using Far Infrared Emission (SAFIRE) Project. Clemson prepared the links from YBa2Cu3O(7-x) superconductor tape that was mounted on a printed circuit board and encapsulated with epoxy resin. The Clemson program includes temperature vs. resistance, liquid nitrogen immersion, water immersion, thermal cycling, humidity, and radiation testing. The evaluation of the links under a long term environmental test program is described. The Savannah River program includes gamma irradiation, vibration, and long-term evaluation. The progress made in these evaluations is discussed.
Haertling, Gene↗
Process and Radiation Induced Defects in Electronic Materials and Devices
Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.
Washington, Kenneth↗
New materials and devices for thermoelectric applications
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thermoelectric energy conversion semiconductors po↗
Testing device subjects elastic materials to biaxial deformations
Testing device stretches elastic materials biaxially over large deformation ranges and varies strain ratios in two perpendicular directions. The device is used in conjunction with a tensile testing machine, which holds the specimen and permits control over the direction and magnitude of the stresses applied.
Becker, G. W.↗
Preparation of homogeneous vitreous materials for electronic and optical devices
Vitreous material builds up as series of solidified layers on inside walls of sealed quartz ampoule containing molten constituents of material, and forms well defined shapes to close dimensional tolerances. Ampoules are made of material which does not react with melt and has lower thermal expansion coefficient than solidified layer.
Gatos, H. C.↗
Advanced electrical power system technology for the all electric aircraft
The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg.
Finke, R. C.↗
Advanced electrical power system technology for the all electric aircraft
The application of advanced electric power system technology to an all electric airplane results in an estimated reduction of the total takeoff gross weight of over 23,000 pounds for a large airplane. This will result in a 5 to 10 percent reduction in direct operating costs (DOC). Critical to this savings is the basic electrical power system component technology. These advanced electrical power components will provide a solid foundation for the materials, devices, circuits, and subsystems needed to satisfy the unique requirements of advanced all electric aircraft power systems. The program for the development of advanced electrical power component technology is described. The program is divided into five generic areas: semiconductor devices (transistors, thyristors, and diodes); conductors (materials and transmission lines); dielectrics; magnetic devices; and load management devices. Examples of progress in each of the five areas are discussed. Bipolar power transistors up to 1000 V at 100 A with a gain of 10 and a 0.5 microsec rise and fall time are presented. A class of semiconductor devices with a possibility of switching up to 100 kV is described. Solid state power controllers for load management at 120 to 1000 V and power levels to 25 kW were developed along with a 25 kW, 20 kHz transformer weighing only 3.2 kg. Previously announced in STAR as N83-24764
Finke, R. C.↗
Minimum wafer thickness by rotated ingot ID wafering
The efficient utilization of materials is critical to certain device applications such as silicon for photovoltaics or diodes and gallium-gadolinium-garnet for memories. A variety of slicing techniques has been investigated to minimize wafer thickness and wafer kerf. This paper presents the results of analyses of ID wafering of rotated ingots based on predicted fracture behavior of the wafer as a result of forces during wafering and the properties of the device material. The analytical model indicated that the minimum wafer thickness is controlled by the depth of surface damage and the applied cantilever force. Both of these factors should be minimized. For silicon, a minimum thickness was found to be approximately 200 x 10 - 6th m for conventional sizes of rotated ingot wafering. Fractures through the thickness of the wafer rather than through the center supporting column were found to limit the minimum wafer thickness. The model suggested that the use of a vacuum chuck on the wafer surface to enhance cleavage fracture of the center supporting core and, with silicon, by using 111-line-type ingots could have potential for reducing minimum wafer thickness.
Chen, C. P.↗
Device research task (processing and high-efficiency solar cells)
This task has been expanded since the last 25th Project Integration Meeting (PIM) to include process research in addition to device research. The objective of this task is to assist the Flat-plate Solar Array (FSA) Project in meeting its near- and long-term goals by identifying and implementing research in the areas of device physics, device structures, measurement techniques, material-device interactions, and cell processing. The research efforts of this task are described and reflect the deversity of device research being conducted. All of the contracts being reported are either completed or near completion and culminate the device research efforts of the FSA Project. Optimazation methods and silicon solar cell numerical models, carrier transport and recombination parameters in heavily doped silicon, development and analysis of silicon solar cells of near 20% efficiency, and SiN sub x passivation of silicon surfaces are discussed.
Source record↗
A design handbook for phase change thermal control and energy storage devices
Comprehensive survey is given of the thermal aspects of phase change material devices. Fundamental mechanisms of heat transfer within the phase change device are discussed. Performance in zero-g and one-g fields are examined as it relates to such a device. Computer models for phase change materials, with metal fillers, undergoing conductive and convective processes are detailed. Using these models, extensive parametric data are presented for a hypothetical configuration with a rectangular phase change housing, using straight fins as the filler, and paraffin as the phase change material. These data are generated over a range of realistic sizes, material properties, and thermal boundary conditions. A number of illustrative examples are given to demonstrate use of the parametric data. Also, a complete listing of phase change material property data are reproduced herein as an aid to the reader.
Humphries, W. R.↗
Crosslinked polymeric dielectric materials and electronic devices incorporating same
Solution-processable dielectric materials are provided, along with precursor compositions and processes for preparing the same. Composites and electronic devices including the dielectric materials also are provided.
Marks, Tobin J.↗
Noise-margin limitations on gallium-arsenide VLSI
Two factors which limit the complexity of GaAs MESFET VLSI circuits are considered. Power dissipation sets an upper complexity limit for a given logic circuit implementation and thermal design. Uniformity of device characteristics and the circuit configuration determines the electrical functional yield. Projection of VLSI complexity based on these factors indicates that logic chips of 15,000 gates are feasible with the most promising static circuits if a maximum power dissipation of 5 W per chip is assumed. While lower power per gate and therefore more gates per chip can be obtained by using a popular E/D FET circuit, yields are shown to be small when practical device parameter tolerances are applied. Further improvements in materials, devices, and circuits wil be needed to extend circuit complexity to the range currently dominated by silicon.
Long, Stephen I.↗
Handbook of Materials and Techniques for Vacuum Devices.
Handbook of materials and techniques for vacuum devices covering high temperature properties, materials selection, joining processes, etc
ELECTRONIC EQUIPMENT↗
Electrically-nonlinear composite material
Low-temperature sinter of semiconductor and polymer resin is useful in manufacture of circuit boards, cables, and electroexplosive devices. Material can absorb large amounts of heat and can withstand repeated exposures to electrostatic discharges with little deteriorating effects. These characteristics offer significant advantages over high-temperature-sintered, metal-oxide semiconducting materials.
Menichelli, V. J.↗