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NASA NTRS1992

Onset of dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the dispersion in phase velocity of a Nb-SiO(x)-Nb microstrip transmission line resonator over a frequency range from 50 GHz to 800 GHz. A submicron Nb/Al-AlO(x)/Nb Josephson junction was used as a voltage-controlled oscillator to excite the high order modes in the resonator. The same junction is used as a direct detector resulting in a series of step-like structures in the DC current-voltage characteristic at the position of each mode frequency. The transmission line is dispersionless up to about 500 GHz where the phase velocity begins to decrease. This is well below the gap frequency f(sub g) approx. equals 700 GHz. Results agree qualitatively with the expected theoretical behavior near f(sub g). This onset of dispersion and loss in Nb transmission lines will have a significant impact on the design of submillimeter wave RF circuits.

Javadi, H. H. S.↗

NASA NTRS1995

Novel low profile antenna candidates for EHF portable terminals

This paper presents three low profile antenna candidates for EHF portable communication terminals. The first structure is a planar, multilayer microstrip antenna utilizing electromagnetic coupling to minimize the complexity and losses associated with the feed network. The second candidate is a medium gain (15 dB) radiating cavity antenna utilizing a thick metallic ground plane. This element is amenable to device integration because a heat sink is incorporated and an area is available for fastening modular RF components. Thirdly, as an alternative to microstrip antennas, dielectric resonator antennas (DRA's) are presented. A broadband (28 percent) DRA is discussed. Experimental measurements are presented for all three antenna candidates.

D. Roscoe↗

NASA NTRS1998

An Evanescent Microwave Probe for Super-Resolution Nondestructive Imaging of Metals, Semiconductors, Dielectrics, Composites and Biological Specimens

Using evanescent microwaves with decay lengths determined by a combination of microwave wavelength (lambda) and waveguide termination geometry, we have imaged and mapped material non-uniformities and defects with a resolving capability of lambda/3800=79 microns at 1 GHz. In our method a microstrip quarter wavelength resonator was used to generate evanescent microwaves. We imaged materials with a wide range of conductivities. Carbon composites, dielectrics (Duroid, polymers), semiconductors (3C-SiC, polysilicon, natural diamond), metals (tungsten alloys, copper, zinc, steel), high-temperature superconductors, and botanical samples were scanned for defects, residual stresses, integrity of brazed junctions, subsurface features, areas of different film thickness and moisture content. The evanescent microwave probe is a versatile tool and it can be used to perform very fast, large scale mapping of a wide range of materials. This method of characterization compares favorably with ultrasound testing, which has a resolution of about 0.1 mm and suffers from high absorption in composite materials and poor transmission across boundaries. Eddy current methods which can have a resolution on the order of 50 microns are restricted to evaluating conducting materials. Evanescent microwave imaging, with careful choice of operating frequency and probe geometry, can have a resolution of up to 1 micron. In this method we can scan hot and moving objects, sample preparation is not required, testing is non-destructive, non-invasive and non-contact, and can be done in air, in liquid or in vacuum.

Pathak, P. S.↗

NASA NTRS2006

Multichannel X-Band Dielectric-Resonator Oscillator

A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be switched among any of the 26 channels and can be phase-locked to a nominal frequency in any channel. The degree of nonlinearity of tuning was found not to exceed 2.5 percent. The tuning sensitivity was found to be 6.15 MHz/V at a bias offset of -2 V on the phase-lock-loop varactor. The phase noise of the oscillator in free-running operation was found to be -107 dBc/Hz (where dBc signifies decibels relative to the carrier signal) at 100 kHz away from the carrier frequency.

Mysoor, Narayan↗

NASA NTRS1990

Performance of all-NbN superconductive tunnel junctions as mixers at 205 GHz

Small-area (1x1 sq micron) high-current-density NbN-MgO-NbN tunnel junctions with I-V characteristics suitable for high frequency mixers were fabricated. These junctions are integrated with superconducting microstrip lines designed to resonate out the large junction capacitance. The mixer gain and noise performance were studied near 205 GHz as a function of the inductance provided by the microstrip. This has yielded values of junction capacitance of 85 fF/sq microns and magnetic penetration depth of 3800 angstroms. Mixer noise as low as 133 K has been obtained for properly tuned junctions. This is the best noise performance ever reported for an NbN SIS mixer.

Mcgrath, W. R.↗

NASA NTRS1991

Performance of NbN superconductive tunnel junctions as SIS mixers at 205 GHz

Small area (less than 1 sq micron), high-current-density NbN/MgO/NbN tunnel junctions with I-V characteristics suitable for high-frequency mixers have been fabricated. Mesa-geometry junctions with an area of about 1 sq micron and critical current density of 5-10 kA/sq cm are integrated with superconducting microstrip lines designed to resonate out the junction capacitance. A study was made of the mixer gain and noise performance near 205 GHz as a function of the inductance provided by the microstrip line. This has confirmed, at a high millimeter-wave frequency, values of junction capacitance of 85 fF/sq micron and recently measured values of a magnetic penetration depth of 380 nm. Mixer noise temperatures as low as 134 K at 1.5 K have been obtained for properly tuned junctions. A significant improvement in mixer performance on cooling from 4.2 K to 1.5 K was observed. Edge-geometry junctions with an area of 0.3 sq microns and critical current density of 18-25 kA/sq cm have also been fabricated. These junctions give a mixer noise temperature of 145 K at 4.2 K without the use of integrated tuning elements. These are the best results ever achieved for NbN-based SIS mixers.

Mcgrath, W. R.↗

NASA NTRS1994

A Ka-Band Circularly Polarized High-Gain Microstrip Array

This article presents a circularly polarized microstrip planar array that resonates at 32 GHz and provides a broadside beam, a minimum gain of 28 dB, and a bandwidth greater than 1 GHz.

High-gain microstrip arrays antenna design Ka-band↗

NASA NTRS1973

Ku-band miniature modulators

Ku-band microminiature modulators were designed to convert a 10 mW signal at 400 MHz to a 10 mW signal at 15 GHz. The designs incorporate gallium arsenide Schottky barrier varactors used in upper-sideband up-converters. The use of Ku-band microstrip circulators and hairpin resonator bandpass filters at 2.1 GHz and 2.5 GHz is included. The design and fabrication of a single up-conversion unit with a double up-conversion unit are compared. Various filter configurations are studies, and the use of both alumina and quartz substrates are considered. The various impedance matching networks are evaluated using computer aided design techniques.

Ernst, R. L.↗

NASA NTRS1986

A new model for broadband waveguide to microstrip transition design

A new model is presented which permits the prediction of the resonant frequencies created by antipodal finline waveguide to microstrip transitions. The transition is modeled as a tapered transmission line in series with an infinite set of coupled resonant circuits. The resonant circuits are modeled as simple microwave resonant cavities of which the resonant frequencies are easily determined. The model is developed and the resonant frequencies determined for several different transitions. Experimental results are given to confirm the models.

Ponchak, George E.↗

NASA NTRS1988

A new model for broadband waveguide-to-microstrip transition design

Ponchak, George E.↗

NASA NTRS2003

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Miranda, Felix A.↗

NASA NTRS2010

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and far-infrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5 micrometer thick silicon membrane, and 380 micrometer thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Brown, Ari-David↗

NASA NTRS2010

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5μm thick silicon membrane, and 380μm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

far-infrared↗

NASA NTRS1991

High temperature superconductor analog electronics for millimeter-wavelength communications

The performance of high temperature superconductor (HTS) passive microwave circuits up to X-band was encouraging when compared to their metallic counterparts. The extremely low surface resistance of HTS films up to about 10 GHz enables a reduction in loss by as much as 100 times compared to copper when both materials are kept at about 77 K. However, a superconductor's surface resistance varies in proportion to the frequency squared. Consequently, the potential benefit of HTS materials to millimeter-wave communications requires careful analysis. A simple ring resonator was used to evaluate microstrip losses at Ka-band. Additional promising components were investigated such as antennas and phase shifters. Prospects for HTS to favorable impact millimeter-wave communications systems are discussed.

Romanofsky, R. R.↗

NASA NTRS1991

High temperature superconductor analog electronics for millimeter-wavelength communications

Romanofsky, R. R.↗

NASA NTRS2012

Fabrication of an Absorber-Coupled MKID Detector

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

Brown, Ari↗

NASA NTRS2005

"The Design of a Compact, Wide Spurious-Suppression Bandwidth Bandpass Filter Using Stepped Impedance Resonators"

We propose an analytical design for a microstrip broadband spurious-suppression filter. The proposed design uses every section of the transmission lines as both a coupling and a spurious suppression element, which creates a very compact, planar filter. While a traditional filter length is greater than the multiple of the quarter wavelength at the center passband frequency (lambda(sub g)/4), the proposed filter length is less than (order n(Ssup th) + l)center dot lambda(sub g)/8. The filter s spurious response and physical dimension are controlled by the step impedance ratio (R) between two transmission line sections as a lambda(sub g)/4 resonator. The experimental result shows that, with R of 0.2, the out-of-band attenuation is greater than 40 dB; and the first spurious mode is shifted to more than 5 times the fundamental frequency. Moreover, it is the most compact planar filter design to date. The results also indicate a low in-band insertion loss.

U-Yen, Kongpop↗

NASA NTRS1992

Dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the effects of dispersion on the resonant mode frequencies of open-ended Nb-SiO(x)-Nb microstrip transmission lines over a frequency range from 50 to 800 GHz. Submicron Nb/Al-AlOx/Nb Josephson junctions were used as both voltage-controlled oscillators and detectors to sample the high order modes of the resonators. The resonator modes are equally spaced up to about 550 GHz where the mode spacing start to decrease gradually to a minimum above the gap frequency of about 700 GHz and then increases. Results are in good agreement with the expected theoretical behavior based on the Mattis-Bardeen conductivity of the superconductor line.

Javadi, H. H. S.↗