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NASA NTRS1994

Soft x ray optics by pulsed laser deposition

A series of molybdenum thin film depositions by PLD (Pulsed Laser Deposition) have been carried out, seeking appropriate conditions for multilayer fabrication. Green (532 nm) and UV (355 nm) light pulses, in a wide range of fluences, were used. Relatively large fluences (in comparison with Si) are required to cause evaporation of molybdenum. The optical penetration depths and reflectivities for Mo at these two wavelengths are comparable, which means that results should be, and do appear to be similar for equal fluences. For all fluences above threshold used, a large number of incandescent particles is ejected by the target (either a standard Mo sputtering target or a Mo sheet were tried), together with the plasma plume. Most of these particles are clearly seen to bounce off the substrate. The films were observed with light microscopy using Nomarski and darkfield techniques. There is no evidence of large debris. Smooth films plus micron-sized droplets are usually seen. The concentration of these droplets embedded in the film appears not to vary strongly with the laser fluence employed. Additional characterization with SEM and XRD is under way.

Fernandez, Felix E.↗

NASA NTRS2018

Supermirror Design for Hard X-Ray Telescopes On-Board Hitomi (ASTROH)

We designed depth-graded multilayers, so-called supermirrors, with platinum/carbon (Pt/C) layer pairs for the Hard X-Ray Telescope (HXT) that was on-board the sixth Japanese X-Ray Astronomy Satellite Hitomi (ASTRO-H). The HXT has multinested thin foil optics, and the grazing angles of the x-ray mirrors are 0.07 to 0.27 deg. Supermirrors for HXTs are designed to provide a broad energy response (up to 80 keV) for astronomical requests. Under practical boundary conditions, we establish a block method applying empirical rules to maximize the integrated reflectivity. We fabricated Pt/C supermirrors using a DC magnetron sputtering system. The reflectivity of the mirrors was measured in a synchrotron radiation facility, SPring-8. We describe the design method for the supermirrors and our results.

Tamura, Keisuke↗

NASA NTRS1994

Reaction of Ta thin film with single crystalline (001) beta-SiC

The reaction between a sputtered-deposited Ta film (320 nm thick) and a single crystalline (001) beta-SiC substrate induced by vacuum annealing at temperatures of 600-1200 C for 1 h (30 min at 1100 C) is investigated by 3 MeV He(+2) backscattering spectrometry, x-ray diffraction, secondary ion mass spectrometry, and transmission and scanning electron microscopies. No significant reaction is observed at 800 C or at lower tempertures. At 900 C, the main product phases are Ta2C and carbon-stabilized Ta5Si3. A minor amount of unreacted Ta is also present. After annealing at 1000 C, all the tantalum has reacted; the reaction zone possesses a multilayered structure of beta-SiC/TaC/carbon-stabilized Ta5Si3/alpha-Ta5Si3/Ta2C. The diffusion path at 1000 C is plotted on the isothermal section of the Ta-Si-C phase diagram. At 1100 C, the reacted layer has an interface with the SiC substrate that is still quite flat but has a rough surface due to the formation of macroscopic voids within the reacted layer. The equilibrium products predicted by the phase diagram are TaC and TaSi2. This final state is reached by annealing at 1200 C for 1 h. At that point, the reacted layer has a latterally very uneven structure and morphology.

Chen, J. S.↗

NASA NTRS2006

Ion Milling On Steps for Fabrication of Nanowires

Arrays of nanowires having controlled dimensions can now be fabricated on substrates, optionally as integral parts of multilayer structures, by means of a cost-effective, high-yield process based on ion milling on steps. Nanowires made, variously, of semiconductors or metals are needed as components of sensors and high-density electronic circuits. Unlike prior processes used to fabricate nanowires, the present process does not involve electron-beam lithography, manipulation of nanoscopic objects by use of an atomic-force microscope, or any other technique that is inherently unsuitable for scaling up to mass production. In comparison with the prior processes, this process is rapid and simple. Wires having widths as small as a few tens of nanometers and lengths as long as millimeters have been fabricated by use of this process. The figure depicts a workpiece at different stages of the process. A silicon dioxide substrate is coated with a photoresist or poly(methyl methacrylate) [PMMA] to a thickness of as much as 500 nm. The photoresist or PMMA is patterned to form edges where wires are to be formed. A metal - either Pt or Ti - is deposited, by sputtering, to a thickness of as much as 200 nm. By ion milling at normal incidence, the thickness of the metal deposit is reduced until the only metal that remains is in the form of wall-like nanowires along the edges of the photoresist or PMMA. Finally, an oxygen plasma is used to remove the photoresist or PMMA, leaving only the nanowires on the substrate.

Yun, Minhee↗