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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Solid, structured composite neutron detectors with high dynamic range capability

Neutron detectors are essential across disciplines such as fundamental science, nuclear security, safeguards, and civilian applications. While 3 He-filled gas proportional counters have long been revered for their efficacy in detecting thermal neutrons and praised for their efficiency, neutron/gamma discrimination, and stability, the scarcity of 3He has spurred a search for alternatives. Here, we explore a solid structured scintillating particle composite (SPC) consisting of 6 Li-containing scintillating glass particles within an acrylic matrix as a neutron detector for high dynamic range applications. We show for the first time that an SPC neutron detector can boast an intrinsic detection efficiency of 0.261% for pure 252 Cf fission neutrons and an overall neutron detection efficiency of (0.546 ± 0.003)% at the Neutron Free-in-Air facility while being able to function in an intense gamma-ray environment. We also show that the SPC neutron detector supports fast neutron capture times and enables a dual-readout scheme that extends the detector dynamic range to high incident neutron fluxes. A scalable fabrication process allows for tailoring the SPC detector properties to the requirements of specific applications. Good agreement is found between the experimental results taken with a National Institute of Standards and Technology traceable 252 Cf source and the coupled MCNP6 and optical-ray-tracing simulations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Front-End Design for SiPM-Based Monolithic Neutron Double Scatter Imagers

Neutron double scatter imaging exploits the kinematics of neutron elastic scattering to enable emission imaging of neutron sources. Due to the relatively low coincidence detection efficiency of fast neutrons in organic scintillator arrays, imaging efficiency for double scatter cameras can also be low. One method to realize significant gains in neutron coincidence detection efficiency is to develop neutron double scatter detectors which employ monolithic blocks of organic scintillator, instrumented with photosensor arrays on multiple faces to enable 3D position and multi-interaction time pickoff. Silicon photomultipliers (SiPMs) have several advantageous characteristics for this approach, including high photon detection efficiency (PDE), good single photon time resolution (SPTR), high gain that translates to single photon counting capabilities, and ability to be tiled into large arrays with high packing fraction and photosensitive area fill factor. However, they also have a tradeoff in high uncorrelated and correlated noise rates (dark counts from thermionic emissions and optical photon crosstalk generated during avalanche) which may complicate event positioning algorithms. We have evaluated the noise characteristics and SPTR of Hamamatsu S13360-6075 SiPMs with low noise, fast electronic readout for integration into a monolithic neutron scatter camera prototype. The sensors and electronic readout were implemented in a small-scale prototype detector in order to estimate expected noise performance for a monolithic neutron scatter camera and perform proof-of-concept measurements for scintillation photon counting and three-dimensional event positioning.

47 OTHER INSTRUMENTATION↗

EGRET High Energy Capability and Multiwavelength Flare Studies and Solar Flare Proton Spectra

UNH was assigned the responsibility to use their accelerator neutron measurements to verify the TASC response function and to modify the TASC fitting program to include a high energy neutron contribution. Direct accelerator-based measurements by UNH of the energy-dependent efficiencies for detecting neutrons with energies from 36 to 720 MeV in NaI were compared with Monte Carlo TASC calculations. The calculated TASC efficiencies are somewhat lower (by about 20%) than the accelerator results in the energy range 70-300 MeV. The measured energy-loss spectrum for 207 MeV neutron interactions in NaI were compared with the Monte Carlo response for 200 MeV neutrons in the TASC indicating good agreement. Based on this agreement, the simulation was considered to be sufficiently accurate to generate a neutron response library to be used by UNH in modifying the TASC fitting program to include a neutron component in the flare spectrum modeling. TASC energy-loss data on the 1991 June 11 flare was transferred to UNH. Also included appendix: Gamma-rays and neutrons as a probe of flare proton spectra: the solar flare of 11 June 1991.

Chupp, Edward L.↗

Accelerator measurement of NaI response to medium energy neutrons and application to a satellite-borne spectrometer

We report on the response of a prototype detector to medium energy neutrons. The neutrons were produced by n-p scattering of a neutron beam on a hydrogen target. The measurements provide unique data on the efficiency and response of large NaI scintillators to neutrons in the energy range 36-709 MeV. We apply the results to the high-energy mode of the Gamma-Ray Spectrometer (GRS) on the Solar Maximum Mission satellite by estimating its efficiency for neutron detection. This estimate is compared to earlier Monte Carlo calculations of the GRS efficiency.

Dunphy, P. P.↗

Neutron tagging following atmospheric neutrino events in a water Cherenkov detector

We present the development of neutron-tagging techniques in Super-Kamiokande IV using a neural network analysis. The detection efficiency of neutron capture on hydrogen is estimated to be 26%, with a mis-tag rate of 0.016 per neutrino event. The uncertainty of the tagging efficiency is estimated to be 9.0%. Measurement of the tagging efficiency with data from an Americium-Beryllium calibration agrees with this value within 10%. The tagging procedure was performed on 3,244.4 days of SK-IV atmospheric neutrino data, identifying 18,091 neutrons in 26,473 neutrino events. The fitted neutron capture lifetime was measured as 218±9 μs.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Status of h-BN quasi-bulk crystals and high efficiency neutron detectors

III-nitrides have fomented a revolution in the lighting industry and are poised to make a huge impact in the field of power electronics. In the III-nitride family, the crystal growth and use of hexagonal BN (h-BN) as an ultrawide bandgap (UWBG) semiconductor are much less developed. Bulk crystals of h-BN produced by the high-temperature/high-pressure and the metal flux solution methods possess very high crystalline and optical qualities but are impractical to serve as substrates or for device implementation as their sizes are typically in millimeters. The development of crystal growth technologies for producing thick epitaxial films (or quasi-bulk or semi-bulk crystals) in large wafer sizes with high crystalline quality is a prerequisite for utilizing h-BN as an UWBG electronic material. Compared to traditional III-nitrides, BN has another unique application as solid-state neutron detectors, which however, also require the development of quasi-bulk crystals to provide high detection efficiencies because the theoretical efficiency (ηi) relates to the detector thickness (d) by ηi=1−e−dλ, where λ denotes the thermal neutron absorption length which is 47 μm (237 μm) for 10B-enriched (natural) h-BN. We provide an overview and recent progress toward the development of h-BN quasi-bulk crystals via hydride vapor phase epitaxy (HVPE) growth and the attainment of thermal neutron detectors based on 100 μm thick 10B-enriched h-BN with a record efficiency of 60%. The thermal neutron detection efficiency was shown to enhance at elevated temperatures. Benchmarking the crystalline and optical qualities of h-BN quasi-bulk crystals with the state-of-the-art mm-sized bulk crystal flakes and 0.5 μm thick epitaxial films identified that reducing the density of native defects such as vacancies remains the most critical task for h-BN quasi-bulk crystal growth by HVPE.

Physics↗

High efficiency hexagonal boron nitride neutron detectors with 1 cm 2 detection areas

We report the realization of 1 cm 2 hexagonal boron nitride (h-BN) thermal neutron detectors with an unprecedented detection efficiency of 59%. This was achieved through improvements in material quality, as reflected in a sixfold enhancement in the electron mobility and lifetime product and a threefold reduction in the surface recombination field, which resulted in a higher detection efficiency at a lower applied electric field over that of a previous state-of-the-art lateral detector with a detection area of 30 mm 2 . The attainment of 1 cm 2 h-BN neutron detectors capable of retaining a high detection efficiency represents a significant milestone toward the practical applications of h-BN detectors.

42 ENGINEERING↗

Search for Astrophysical Electron Antineutrinos in Super-Kamiokande with 0.01% Gadolinium-loaded Water

We report the first search result for the flux of astrophysical electron antineutrinos for energies $\mathcal{O}$(10)$MeV$ in the gadolinium-loaded Super-Kamiokande (SK) detector. In 2020 June, gadolinium was introduced to the ultrapure water of the SK detector in order to detect neutrons more efficiently. In this new experimental phase, SK-Gd, we can search for electron antineutrinos via inverse beta decay with efficient background rejection thanks to the high efficiency of the neutron tagging technique. In this paper, we report the result for the initial stage of SK-Gd, during 2020 August 26, and 2022 June 1 with a 22.5 × 552 kton · day exposure at 0.01% Gd mass concentration. No significant excess over the expected background in the observed events is found for the neutrino energies below 31.3 MeV. Thus, the flux upper limits are placed at the 90% confidence level. The limits and sensitivities are already comparable with the previous SK result with pure water (22.5 × 2970 kton · day) owing to the enhanced neutron tagging. Operation with Gd increased to 0.03% started in 2022 June.

79 ASTRONOMY AND ASTROPHYSICS↗

Light-powered end-to-end neutron detection and imaging with an edge-deployed optical AI chip

Neutron detection is widely used in many applications including nuclear physics, nuclear energy, nuclear technologies and nuclear safeguards. Developing an end-to-end neutron detection and imaging workflow paves way towards fully automated processes for many applications. We implemented an automated workflow for neutron detection experiments which use a solid state image sensor to capture neutron hits as a digital image. We deploy the workflow to an edge-based optical neural network (ONN) to increase the radiation-hardness and lifetime of neutron detection instruments. We present a two-stage neural network framework for detection of neutrons at sub-pixel resolution. The first stage uses a region proposal network to efficiently detect and extract neutron hits from the input camera image. The second stage feeds the extracted hits into a fully connected neural network to predict the sub-pixel hit position. The performance of the two-stage framework is evaluated using the edge-based ONN. The results show that we can achieve above 96% neutron detection accuracy as well as sub-pixel and sub-micron position resolution, while enjoying the advantages of the ONN hardware including radiation-hardness, low energy consumption and high computing speed for integrated edge camera and hardware deployment, when compared with electronic counterparts.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Direct thermal neutron detection by the 2D semiconductor 6 LiInP 2 Se 6

Highly efficient neutron detectors are critical in many sectors, including national security, medicine, crystallography and astronomy. The main neutron detection technologies currently used involve 3 He-gas-filled proportional counters and light scintillators for thermalized neutrons. Semiconductors could provide the next generation of neutron detectors because their advantages could make them competitive with or superior to existing detectors. In particular, solids with a high concentration of high-neutron-capture nuclides (such as 6 Li, 10 B) could be used to develop smaller detectors with high intrinsic efficiencies. However, no promising materials have been reported so far for the construction of direct-conversion semiconductor detectors. Here we report on the semiconductor LiInP 2 Se 6 and demonstrate its potential as a candidate material for the direct detection of thermal neutrons at room temperature. This compound has a good thermal-neutron-capture cross-section, a suitable bandgap (2.06 electronvolts) and a favourable electronic band structure for efficient electron charge transport. We used α particles from an 241 Am source as a proxy for the neutron-capture reaction and determined that the compact two-dimensional (2D) LiInP 2 Se 6 detectors resolved the full-energy peak with an energy resolution of 13.9 per cent. Direct neutron detection from a moderated Pu–Be source was achieved using 6 Li-enriched (95 per cent) LiInP 2 Se 6 detectors with full-peak resolution. Here, we anticipate that these results will spark interest in this field and enable the replacement of 3 He counters by semiconductor-based neutron detectors.

36 MATERIALS SCIENCE↗

Boron nitride neutron detector with the ability for detecting both thermal and fast neutrons

The detection of fast neutrons is regarded technically challenging because the interaction probability of fast neutron with matter is extremely low. Based on our recent development of hexagonal boron nitride (BN) semiconductor thermal neutron detectors with a record high efficiency of 59%, we report here the feasibility studies of BN detectors for detecting fast neutrons. A BN detector with a detection area of 2.1 cm 2 was fabricated from a 90 $μ$m thick BN epilayer. In the presence of a bare Cf-252 source emitting fast neutrons ranging from 1 to 9 MeV, the detection efficiency was estimated to be about 0.1%. Furthermore, the measured mean free path of fast neutron in BN is about 7.6 cm. Together with the capability of BN for thermal neutron detection, the present results indicate that by incorporating BN with a large thickness, BN neutron detectors are expected to possess the unique capability of directly detecting thermal to fast neutrons as well as outstanding features resulting from the ultrawide bandgap of BN. The identification of a single material that is sensitive to both thermal and fast neutrons is valuable for the development of novel neutron detection technologies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Review of Direct Neutron Conversion and Detection Processes

Commercial and laboratory neutron detection systems use indirect neutron response of materials like pressurized helium-3 (via nuclear reaction 3He(n, p)3H) to measure and count neutrons emanating from a source. Recently a host of semiconductors, especially a ternary semiconductor of lithium indium diselenide (6LiInSe2) and a quaternary alloy of enriched lithium-6, indium, phosphorous, and selenium (6LiInP2Se6), have shown promising neutron counting possibilities by directly converting neutrons into charge-carrying elements within the body of the semiconductor. These semiconductors have high thermal neutron capture cross sections, suitable energy bandgaps (~2.0 electron volts) for room-temperature operations, and a favorable electronic band structure for efficient electron charge transport. The article examines the semiconductor properties of these compounds in terms of their neutron counting capabilities and possible ways to extract neutron energy information from them. Lithium-6 and boron-10 (with thermal neutron absorption cross sections of 938 ± 6 and 3855 ± 26 barns, respectively) produce charged particles to be measured via indirect neutron interactions. The efficiency of indirect conversion neutron detectors is limited because of the inefficiencies in conversion mechanism. In case of direct conversion, the neutrons create charged particles in a single material for neutron capture and charge collection, increasing detection efficiency. Unlike 3He proportional counters, which provide no neutron energy information, the semiconductors can be used as neutron energy spectrometer. Fully resolved neutron energy by 6LiInP2Se6 from a plutonium-beryllium source has been reported in the literature. We will discuss the influence of these multilayered semiconductors’ crystallographic structures and growth techniques on neutron energy determination.

61 RADIATION PROTECTION AND DOSIMETRY↗

Generalized method for the optimization of pulse shape discrimination parameters

Organic scintillators exhibit fast timing, high detection efficiency for fast neutrons and pulse shape discrimination (PSD) capability. PSD is essential in mixed radiation fields, where different types of radiation need to be detected and discriminated. In neutron measurements for nuclear security and non proliferation effective PSD is crucial, because a weak neutron signature needs to be detected in the presence of a strong gamma-ray background. Here, the most commonly used deterministic PSD technique is charge integration (CI). This method requires the optimization of specific parameters to obtain the best gamma-neutron separation. These parameters depend on the scintillating material and light readout device and typically require a lengthy optimization process and a calibration reference measurement with a mixed source. In this paper, we propose a new method based on the scintillation fluorescence physics that enables to find the optimum PSD integration gates using only a gamma-ray emitter. We demonstrate our method using three organic scintillation detectors: deuterated trans-stilbene, small-molecule organic glass, and EJ-309. In all the investigated cases, our method allowed finding the optimum PSD CI parameters without the need of iterative optimization.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Suggestions for improving the efficiency of ground-based neutron monitors for detecting solar neutrons

On the occasion of the June 3, 1982 intense gamma-ray solar flare a significant increase in counting rate due to solar neutrons was observed by the neutron monitors of Junsfraujoch and Lomnicky Stit located at middle latitudes and high altitudes. In spite of a larger detector employed and of the smaller solar zenith angle, the amplitude of the same event observed at Rome was much smaller and the statistical fluctuations of the salactic cosmic ray background higher than the ones registered at the two mountain stations, because of the greater atmospheric depth at which the Rome monitor is located. The effeciency for detecting a solar neutron event by a NM-64 monitor as a function of the Sun zenith angle, atmospheric depth and threshold rigidity of the station was studied.

Iucci, N.↗

Efficiency Studies of Fast Neutron Tracking Using MCNP

Fast neutron identification and spectroscopy is of great interest to nuclear physics experiments. Using the neutron elastic scattering, the fast neutron momentum can be measured. Wang and Morris introduced the theoretical concept that the initial fast neutron momentum can be derived from up to three consecutive elastic collisions between the neutron and the target, including the information of two consecutive recoil ion tracks and the vertex position of the third collision or two consecutive elastic collisions with the timing information. Here, we also include the additional possibility of measuring the deposited energies from the recoil ions. In this paper, we simulate the neutron elastic scattering using the Monte Carlo N-Particle Transport Code (MCNP) and study the corresponding neutron detection and tracking efficiency. The corresponding efficiency and the scattering distances are simulated with different target materials, especially natural silicon (92.23%28Si, 4.67%29Si, and 3.1%30Si) and helium-4 (4He). The timing of collision and the recoil ion energy are also investigated, which are important characters for the detector design. We also calculate the ion traveling range for different energies using the software, “The Stopping and Range of Ions in Matter (SRIM)”, showing that the ion track can be most conveniently observed in 4He unless sub-micron spatial resolution can be obtained in silicon.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.

Physics↗