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At least 55 records · Page 3

Sub-2 Kelvin Characterization of Nitrogen-Vacancy Centers in Silicon Carbide Nanopillars

The development of efficient quantum communication technologies depends on the innovation in multiple layers of its implementation, a challenge we address from the fundamental properties of the physical system at the nanoscale to the instrumentation level at the macroscale. We select a promising near-infrared quantum emitter, the nitrogen-vacancy (NV) center in 4H-SiC, and integrate it, at an ensemble level, with nanopillar structures that enhance photon collection efficiency into an objective lens. Moreover, changes in collection efficiency in pillars compared to bulk can serve as indicators of color center orientation in the lattice. To characterize NV center properties at the unprecedented sub-2 K temperatures, we incorporate compatible superconducting nanowire single photon detectors inside the chamber of an optical cryostat and create the ICECAP, the Integrated Cryogenic system for Emission, Collection And Photon detection. ICECAP measurements show no significant line-width broadening of NV ensemble emission and up to 14-fold enhancement in collected emission. With additional filtering, we measure emitter lifetimes of NV centers in a basal ( hk ) and axial ( kk ) orientation, unveiling their cryogenic values of 2.2 and 2.8 ns.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nanoscale solid-state nuclear quadrupole resonance spectroscopy using depth-optimized nitrogen-vacancy ensembles in diamond

Nuclear magnetic resonance (NMR) and nuclear quadrupole resonance (NQR) spectroscopy of bulk quantum materials have provided insight into phenomena, such as quantum phase criticality, magnetism, and superconductivity. With the emergence of nanoscale 2D materials with magnetic phenomena, inductively detected NMR and NQR spectroscopy are not sensitive enough to detect the smaller number of spins in nanomaterials. The nitrogen-vacancy (NV) center in diamond has shown promise in bringing the analytic power of NMR and NQR spectroscopy to the nanoscale. However, due to depth-dependent formation efficiency of the defect centers, noise from surface spins, band bending effects, and the depth dependence of the nuclear magnetic field, there is ambiguity regarding the ideal NV depth for surface NMR of statistically polarized spins. In this work, we prepared a range of shallow NV ensemble layer depths and determined the ideal NV depth by performing NMR spectroscopy on statistically polarized 19 F in Fomblin oil on the diamond surface. We found that the measurement time needed to achieve a signal-to-noise ratio of 3 using XY8-N noise spectroscopy has a minimum at an NV ensemble depth of 5.5 ± 1.5 nm for ensembles activated from 100 ppm nitrogen concentration. To demonstrate the sensing capabilities of NV ensembles, we perform NQR spectroscopy on the 11 B of hexagonal boron nitride flakes. We compare our best diamond to previous work with a single NV and find that this ensemble provides a shorter measurement time with excitation diameters as small as 4 μm. Furthermore, this analysis provides ideal conditions for further experiments involving NMR/NQR spectroscopy of 2D materials with magnetic properties.

2D materials↗

Nitrogen Vacancy Centers in Diamond for Stress Sensing Applications: Theory and Experiments

Sensing of stress under high elevated environmental conditions with high resolution has critical importance for range of applications including earth’s subsurface scanning and geological CO2 storage monitoring. Using first principles density functional theory (DFT) approach combined with the theoretical modelling of low energy Hamiltonian, here we investigate a novel approach to detect unprecedented level of pressure by taking advantage of solid-state electron’s spin of Nitrogen vacancy (NV) centers in nanodiamond. We computationally explore the effect of strain on the defect band edges and band gaps by varying the lattice parameters of diamond supercell hosting a single NV center. A low energy Hamiltonian is developed that includes effect of stress on the energy level of ±1 spin manifold at the ground state. By quantifying the energy level shift and split, we predict the pressure sensing of up to 0.3 MPa/√Hz. We show superiority of the quantum sensing over traditional optical sensing techniques by discussing our results from DFT and theoretical modelling for the frequency shift per unit pressure. The proposed quantum stress sensing could be useful to measure earth’s subsurface vibrations. Our results open avenues for development of sensing technology with a high sensitivity and resolution under extreme pressure conditions that potentially has a wider applicability than existing pressure sensing technologies.

Paudel, Hari P.↗

Magnetic Field Sensing via Optically Detected Magnetic Resonance and Spin Relaxometry Using Nitrogen Vacancies in Nanodiamonds

Quantum sensing is broadly defined as the use of quantum materials, quantum coherence, and/or quantum entanglement to measure physical quantities and/or to enhance the sensitivity of classical analytical measurements. Certain materials exhibit interesting quantum properties that have the potential to be utilized in quantum sensing applications. One such quantum property is electronic spin, which is utilized in this work. Here, we built a custom apparatus capable of conducting both optically detected magnetic resonance (ODMR) and spin relaxometry. The quantum material investigated was an ensemble of nitrogen vacancies (NV) in nanodiamonds. We have characterized the system and measured ODMR spectra for different strengths of the applied DC magnetic field and clearly observed the expected splitting of the resonances due to Zeeman splitting. We also have measured the spin relaxation times for two different powers of the applied AC magnetic field. The lower power dataset exhibited expected exponential temporal dependence of the relaxation of a modified spin state, whereas the higher power dataset exhibited stretched exponential dependence of the evolution of the modified spin state, indicating the presence of high-power phenomena that emerge that retard the relaxation of the spin state.

Lander, Gary↗

Magnetic Field Sensing via Optically Detected Magnetic Resonance and Spin Relaxometry Using Nitrogen Vacancies in Nanodiamonds

Quantum sensing is broadly defined as the use of quantum materials, quantum coherence, and/or quantum entanglement to measure physical quantities and/or to enhance the sensitivity of classical analytical measurements. Certain materials exhibit interesting quantum properties that have the potential to be utilized in quantum sensing applications. One such quantum property is electronic spin, which is utilized in this work. Here, we built a custom apparatus capable of conducting both optically detected magnetic resonance (ODMR) and spin relaxometry. The quantum material investigated was an ensemble of nitrogen vacancies (NV) in nanodiamonds. We have characterized the system and measured ODMR spectra for different strengths of the applied DC magnetic field and clearly observed the expected splitting of the resonances due to Zeeman splitting. We also have measured the spin relaxation times for two different powers of the applied AC magnetic field. The lower power dataset exhibited expected exponential temporal dependence of the relaxation of a modified spin state, whereas the higher power dataset exhibited stretched exponential dependence of the modified spin state, indicating the presence of high-power phenomena that emerge that retard the relaxation of the spin state.

Lander, Gary↗

Vibrationally resolved optical excitations of the nitrogen-vacancy center in diamond

A comprehensive description of the optical cycle of spin defects in solids requires the understanding of the electronic and atomistic structure of states with different spin multiplicity, including singlet states which are particularly challenging from a theoretical standpoint. We present a general framework, based on spin-flip time-dependent density function theory, to determine the excited state potential energy surfaces of the many-body singlet states of spin defects; we then predict the vibrationally resolved absorption spectrum between singlet shelving states of a prototypical defect, the nitrogen-vacancy center in diamond. Our results, which are in very good agreement with experiments, provide an interpretation of the measured spectra and reveal the key role of specific phonons in determining absorption processes, and the notable influence of non-adiabatic interactions. The insights gained from our calculations may be useful in defining strategies to improve infrared-absorption-based magnetometry and optical pumping schemes. The theoretical framework developed here is general and applicable to a variety of other spin defects and materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Fault localization in a microfabricated surface ion trap using diamond nitrogen-vacancy center magnetometry

Here, as quantum computing hardware becomes more complex with ongoing design innovations and growing capabilities, the quantum computing community needs increasingly powerful techniques for fabrication failure root-cause analysis. This is especially true for trapped-ion quantum computing. As trapped-ion quantum computing aims to scale to thousands of ions, the electrode numbers are growing to several hundred, with likely integrated photonic components also adding to the electrical and fabrication complexity, making faults even harder to locate. In this work, we used a high-resolution quantum magnetic imaging technique, based on nitrogen-vacancy centers in diamond, to investigate short-circuit faults in an ion trap chip. We imaged currents from these short-circuit faults to ground and compared them to intentionally created faults, finding that the root cause of the faults was failures in the on-chip trench capacitors. This work, where we exploited the performance advantages of a quantum magnetic sensing technique to troubleshoot a piece of quantum computing hardware, is a unique example of the evolving synergy between emerging quantum technologies to achieve capabilities that were previously inaccessible.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Image Processing Algorithms for Tuning Quantum Devices and Nitrogen-Vacancy Imaging

Semiconductor quantum dot devices can be challenging to configure into a regime where they are suitable for qubit operation. This challenge arises from variations in gate control of quantum dot electron occupation and tunnel coupling between quantum dots on a single device or across several devices. Furthermore, a single control gate usually has capacitive coupling to multiple quantum dots and tunnel barriers between dots. If the device operator, be it human or machine, has quantitative knowledge of how gates control the electrostatic and dynamic properties of multiqubit devices, the operator can more quickly and easily navigate the multidimensional gate space to find a qubit operating regime. We have developed and applied image analysis techniques to quantitatively detect where charge offsets from different quantum dots intersect, so called anticrossings. In this document we outline the details of our algorithm for detecting single anticrossings, which has been used to fine-tune the inter-dot tunnel rates for a three quantum dot system. Additionally, we show that our algorithm can detect multiple anticrossings in the same dataset, which can aid in the coarse tuning the electron occupation of multiple quantum dots. We also include an application of cross correlation to the imaging of magnetic fields using nitrogen vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Probing itinerant carrier dynamics at the diamond surface using single nitrogen vacancy centers

Color centers in diamond are widely explored for applications in quantum sensing, computing, and networking. Their optical, spin, and charge properties have extensively been studied, while their interactions with itinerant carriers are relatively unexplored. Here, we show that NV centers situated 10 ± 5 nm of the diamond surface can be converted to the neutral charge state via hole capture. By measuring the hole capture rate, we extract the capture cross section, which is suppressed by proximity to the diamond surface. The distance dependence is consistent with a carrier diffusion model, indicating that the itinerant carrier lifetime can be long, even at the diamond surface. Measuring dynamics of near-surface NV centers offers a tool for characterizing the diamond surface and investigating charge transport in diamond devices.

Physics↗