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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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We are developing frequency stabilized lasers in support of NASA's time-varying-gravity mapping missions. Small changes in the distance between spacecraft will be detected using interferometric techniques between two satellites with on-board stable lasers.
A technique for reducing the vibration sensitivity of laser-stabilizing optical reference cavities is based upon an improved design and mounting method for the cavity, wherein the cavity is mounted vertically. It is suspended at one plane, around the spacer cylinder, equidistant from the mirror ends of the cavity. The suspension element is a collar of an extremely low thermal expansion coefficient material, which surrounds the spacer cylinder and contacts it uniformly. Once the collar has been properly located, it is cemented in place so that the spacer cylinder is uniformly supported and does not have to be squeezed at all. The collar also includes a number of cavities partially bored into its lower flat surface, around the axial bore. These cavities are support points, into which mounting base pins will be inserted. Hence the collar is supported at a minimum of three points.
Application of diffractionless dielectrics as transmitting media between laser beam source and receiver is discussed. Optical properties of transmitting media are described and general system diagram is illustrated. Use of system in power transmission, communications, surgery, and machinery is explained.
A pulsed laser system includes a modulator module configured to provide pulsed electrical signals and a plurality of solid-state seed sources coupled to the modulator module and configured to operate, responsive to the pulsed electrical signals, in a pulse mode. Each of the plurality of solid-state seed sources is tuned to a different frequency channel separated from any adjacent frequency channel by a frequency offset. The pulsed laser system also includes a combiner that combines outputs from each of the solid state seed sources into a single optical path and an optical doubler and demultiplexer coupled to the single optical path and providing each doubled seed frequency on a separate output path.
Frequency-bin encoding offers tremendous potential in quantum photonic information processing, in which a single waveguide can support hundreds of lightpaths in a naturally phase-stable fashion. This stability, however, comes at a cost: arbitrary unitary operations can be realized by cascaded electro-optic phase modulators and pulse shapers, but require nontrivial numerical optimization for design and have thus far been limited to discrete tabletop components. In this article, we propose, formalize, and computationally evaluate a new paradigm for universal frequency-bin quantum information processing using acousto-optic scattering processes between distinct transverse modes. We show that controllable phase matching in intermodal processes enables 2 × 2 frequency beamsplitters and transverse-mode-dependent phase shifters, which together comprise cascadable FRequency-transverse-mODe Operations (FRODOs) that can synthesize any unitary via analytical decomposition procedures. Modeling the performance of both random gates and discrete Fourier transforms, we demonstrate the feasibility of high-fidelity quantum operations with existing integrated photonics technology, highlighting prospects of parallelizable operations achieving 100% bandwidth utilization. Our approach is realizable with CMOS technology, opening the door to scalable on-chip quantum information processing in the frequency domain.
An effective form of wireless power transmission (WPT) has been developed to enable extended mission durations, increased coverage and added capabilities for both space and terrestrial applications that may benefit from optically delivered electrical energy. The high intensity laser power beaming (HILPB) system enables long range optical 'refueling" of electric platforms such as micro unmanned aerial vehicles (MUAV), airships, robotic exploration missions and spacecraft platforms. To further advance the HILPB technology, the focus of this investigation is to determine the optimal laser wavelength to be used with the HILPB receiver, which utilizes vertical multi-junction (VMJ) photovoltaic cells. Frequency optimization of the laser system is necessary in order to maximize the conversion efficiency at continuous high intensities, and thus increase the delivered power density of the HILPB system. Initial spectral characterizations of the device performed at the NASA Glenn Research Center (GRC) indicate the approximate range of peak optical-to-electrical conversion efficiencies, but these data sets represent transient conditions under lower levels of illumination. Extending these results to high levels of steady state illumination, with attention given to the compatibility of available commercial off-the-shelf semiconductor laser sources and atmospheric transmission constraints is the primary focus of this paper. Experimental hardware results utilizing high power continuous wave (CW) semiconductor lasers at four different operational frequencies near the indicated band gap of the photovoltaic VMJ cells are presented and discussed. In addition, the highest receiver power density achieved to date is demonstrated using a single photovoltaic VMJ cell, which provided an exceptionally high electrical output of 13.6 W/sq cm at an optical-to-electrical conversion efficiency of 24 percent. These results are very promising and scalable, as a potential 1.0 sq m HILPB receiver of similar construction would be able to generate 136 kW of electrical power under similar conditions.
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A new metal-oxide-metal device (Ni-NiO-Ni, Edge MOM) which is stable, reproducibly fabricated, and with a 10 to the -10th sq cm tunneling area is presented. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 microns. Similar devices with 10 to the -8th sq cm tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-micron range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.
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We demonstrate an electrically-driven frequency comb whose sub-picosecond pulses span more than 1 THz of spectral bandwidth centered near 3.6 µm. This is achieved by passively mode locking an interband cascade laser with gain and saturable absorber sections monolithically integrated on the same chip.
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Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, in this study, we use one such system, vanadium (V 4+ ) in silicon carbide, to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all-optical measurements of temperature-dependent spin relaxation times (T 1 ). By using this technique, and lowering the temperature from approximately 2 K to approximately 100 mK, we observe a remarkable 4-orders-of-magnitude increase in spin T 1 across all measured sites, with site-specific values ranging from 57.1 ms to 27.9 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain tuning to enable qubit operation at higher temperatures. These results position V 4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks.
Optical networks are the leading platform for the transfer of information due to their low loss and ability to scale to many information channels using optical frequency modes. To fully leverage the quantum properties of light in this platform, it is desired to manipulate higher-dimensional superpositions by orchestrating linear, beamsplitter-type interactions between several channels simultaneously. We propose a method of achieving simultaneous, all-to-all coupling between N optical frequency modes via N -way Bragg-scattering four-wave mixing. By exploiting the frequency degree of freedom, additional modes can be multiplexed in an interaction medium of fixed volume and loss while avoiding the introduction of excess noise. We generalize the theory of the frequency-encoded two-mode interaction to N modes under this four-wave-mixing approach, finding that arbitrary unitary transformations are possible through successive four-wave-mixing pump configurations. We experimentally verify the quantum nature of this scheme by demonstrating three-way multiphoton interference. Two input photons are shared among three frequency modes and display interference differing from that of two classical (coherent-state) inputs. These results show the potential of our approach for the scalability of photonic quantum information processing to general N -mode systems in the frequency domain. Published by the American Physical Society 2025
We report the results of the study of the acoustic and optical phonons in Si-doped AlN thin films grown by metal–organic chemical vapor deposition on sapphire substrates. The Brillouin–Mandelstam and Raman light scattering spectroscopies were used to measure the acoustic and optical phonon frequencies close to the Brillouin zone center. The optical phonon frequencies reveal non-monotonic changes, reflective of the variations in the thin film strain and dislocation densities with the addition of Si dopant atoms. The acoustic phonon velocity decreases monotonically with increasing Si dopant concentration, reducing by ∼300 m/s at the doping level of 3 × 1019 cm−3. The knowledge of the acoustic phonon velocities can be used for the optimization of the ultra-wide bandgap semiconductor heterostructures and for minimizing the thermal boundary resistance of high-power devices.