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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Oxidation of commercial purity titanium

The oxidation kinetics of commercial purity Ti-A55 exposed to laboratory air in the 593-760 C temperature range were continuously monitored by thermogravimetric analysis. The oxide thickness was measured by microscopy, and the substrate contamination was estimated from microhardness measurements. The microhardness depth profiles were converted to oxygen composition profiles using calibration depth. The oxygen diffusion coefficient in alpha-Ti appears to be approximately concentration-independent in the 1-10 at. pct oxygen range. Diffusion coefficient for oxygen in TiO2 has been estimated as a function of temperature and is found to be about 50 times the value in alpha-Ti. The metallographically prepared cross sections of the oxidized specimens revealed a 'moving boundary' in the substrate, parallel to the oxide-metal interface. This boundary was associated with a specific oxygen level of 5.0 + or - 0.5 at. pct. It occurred at a distance from the oxide-metal interface which was correlatable with temperature and time of exposure. The diffusion coefficient corresponding to the composition of this moving boundary is in excellent agreement with the effective diffusion coefficient for the substrate contamination.

Unnam, J.↗
NASA NTRS1993

Stable isotopes as tracers of methane dynamics in Everglades marshes with and without active populations of methane oxidizing bacteria

The stable carbon isotopic composition of CH4 is used to study the processes that affect it during transport through plants from sediment to the atmosphere. The enhancement of CH4 flux from Cladium and Eleocharis over the flux from open water or clipped sites indicated that these plants served as gas conduits between the sediments and the atmosphere. Lowering of the water table below the sediment surface caused an Everglades sawgrass marsh to shift from emission of CH4 to consumption of atmospheric CH4. Cladium transported gases passively mainly via molecular diffusion and/or effusion instead of actively via bulk flow. Stable isotropic data gave no evidence that CH4 oxidation was occurring in the rhizosphere of Cladium. Both CH4 stable carbon isotope and flux data indicated a lack of CH4 oxidation at the sediment-water interface in Everglades marl soils and its presence in peat soils where 40 to 92 percent of the flux across the sediment-water interface was oxidized.

Happell, James D.↗
NASA NTRS1978

Oxide morphology and spalling model for NiAl

A scanning electron microscope equipped with an energy dispersive spectrographic unit was used to study in detail the Al2O3 oxide morphology and oxide-metal interface of a nickel-rich NiAl alloy (Ni-42 at% Al) with a view toward providing information relevant to spalling theories in the MCrAlY system. In addition, the kinetics of spalling was studied for critical evaluation of one of the step-process spall models and for collection of pertinent experimental data. Cyclic oxidation tests were run in 1-atm air at about 1100 C, and isothermal specimens were examined from 2 min to 200 hr of exposure. It is shown that oxide spalling occurs primarily at the oxide-metal interface in an intergranular mode, that crystallographic Kirkendall voids arise as a result of oxidation, and that the fractional area of spalled oxide varies widely in cyclic tests but increases with the square of oxide thickness for isothermal tests. A spall model is developed in the form of a summation series.

Smialek, J. L.↗
NASA NTRS1984

Thermal oxidation of 3C silicon carbide single-crystal layers on silicon

Thermal oxidation of thick single-crystal 3C SiC layers on silicon substrates was studied. The oxidations were conducted in a wet O2 atmosphere at temperatures from 1000 to 1250 C for times from 0.1 to 50 h. Ellipsometry was used to determine the thickness and index of refraction of the oxide films. Auger analysis showed them to be homogeneous with near stoichiometric composition. The oxide growth followed a linear parabolic relationship with time. Activation energy of the parabolic rate constant was found to be 50 kcal/mole, while the linear rate constant was 74 kcal/mole. The latter value corresponds approximately to the energy required to break a Si-C bond. Electrical measurements show an effective density of 4-6 x 10 to the 11th per sq cm for fixed oxide charges at the oxide-carbide interface, and the dielectric strength of the oxide film is aproximately 6 x 10 to the 6th V/cm.

Fung, C. D.↗
NASA NTRS1987

Tensile behavior of glass/ceramic composite materials at elevated temperatures

This paper describes the tensile behavior of high-temperature composite materials containing continuous Nicalon ceramic fiber reinforcement and glass and glass/ceramic matrices. The longitudinal properties of these materials can approach theoretical expectations for brittle matrix composites, failing at a strength and ultimate strain level consistent with those of the fibers. The brittle, high-modulus matrices result in a nonlinear stress-strain curve due to the onset of stable matrix cracking at 10 to 30 percent of the fiber strain to failure, and at strains below this range in off-axis plies. Current fibers and matrices can provide attractive properties well above 1000 C, but composites experience embrittlement in oxidizing atmospheres at 800 to 1000 C due to oxidation of a carbon interface reaction layer.The oxidation effect greatly increases the interface bond strength, causing composite embrittlement.

Mandell, J. F.↗
NASA NTRS1983

Interface states and internal photoemission in p-type GaAs metal-oxide-semiconductor surfaces

An interface photodischarge study of p-type GaAs metal-oxide-semiconductor (MOS) structures revealed the presence of deep interface states and shallow donors and acceptors which were previously observed in n-type GaAs MOS through sub-band-gap photoionization transitions. For higher photon energies, internal photoemission was observed, i.e., injection of electrons to the conduction band of the oxide from either the metal (Au) or from the GaAs valence band; the threshold energies were found to be 3.25 and 3.7 + or - 0.1 eV, respectively. The measured photoemission current exhibited a thermal activation energy of about 0.06 eV, which is consistent with a hopping mechanism of electron transport in the oxide.

Kashkarov, P. K.↗
NASA NTRS1979

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

The chemical structures of thin SiO2 films, thin native oxides of GaAs (20-30 A), and the respective oxide-semiconductor interfaces, have been investigated using high-resolution X-ray photoelectron spectroscopy. Depth profiles of these structures have been obtained using argon ion bombardment and wet chemical etching techniques. The chemical destruction induced by the ion profiling method is shown by direct comparison of these methods for identical samples. Fourier transform data-reduction methods based on linear prediction with maximum entropy constraints are used to analyze the discrete structure in oxides and substrates. This discrete structure is interpreted by means of a structure-induced charge-transfer model.

Grunthaner, F. J.↗
NASA NTRS1988

Diffusional transport during the cyclic oxidation of gamma + beta, Ni-Cr-Al(Y, Zr) alloys

The cyclic oxidation behavior of several cast gamma + beta, Ni-Cr-Al(Y, Zr) alloys and one low-pressure plasma spraying gamma + beta, Ni-Co-Cr-Al(Y) alloy was studied. Cyclic oxidation was found to result in a decreasing Al concentration at the oxide-metal interface due to a high rate of Al consumption coupled with oxide scale cracking and spalling. Diffusion paths plotted on the ternary phase diagram showed higher Ni concentrations with increasing cyclic oxidation exposures. The alloy with the highest rate of Al consumption and the highest Al content underwent breakaway oxidation following 500 1-hr cycles at 1200 C.

Nesbitt, J. A.↗
NASA NTRS1983

Developments toward an 18% efficient silicon solar cell

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Meulenberg, A., Jr.↗
NASA NTRS1990

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo intermetallic alloy

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using x ray diffraction techniques, electron microprobe analysis, and energy dispersive x ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Wallace, Terryl A.↗
NASA NTRS1992

Oxidation characteristics of Ti-25Al-10Nb-3V-1Mo

Static oxidation kinetics of the super-alpha 2 titanium-aluminide alloy Ti-25Al-10Nb-3V-1Mo (at. percent) were investigated in air over the temperature range of 650 to 1000 C using thermogravimetric analysis. The oxidation kinetics were complex at all exposure temperatures and displayed up to three distinct oxidation rates. Breakaway oxidation occurred after long exposure times at high temperatures. Oxidation products were determined using X-ray diffraction techniques, electron microprobe analysis, and energy dispersive X-ray analysis. Oxide scale morphology was examined by scanning electron microscopy of the surfaces and cross sections of oxidized specimens. The oxides during the parabolic stages were compact and multilayered, consisting primarily of TiO2 doped with Nb, a top layer of Al2O3, and a thin bottom layer of TiN. The transition between the second and third parabolic stage was found to be linked to the formation of a TiAl layer at the oxide-metal interface. Porosity was formed during the third stage, causing degradation of the oxide and the beginning of breakaway oxidation.

Wallace, T. A.↗
NASA NTRS1987

High-temperature oxidation/corrosion of iron-based superalloys

The oxidation and sulfidation of several novel iron-base superalloys were evaluated in high-temperature cyclic tests. The experimental austenitic alloys examined were modifications of NASAUT-4GA which were developed for Stirling-engine application. The weight gains and resulting surface scales were measured and analyzed. Mixed oxide scales were found to form on all specimens exposed above 871 C. The build-up of these scales led to a depletion of Mn and Cr in a zone adjacent to the oxides. In addition, the initial oxidation of the Fe-rich alloy was inhibited by a thin but tenacious Si layer which formed at the interface between oxides and the parent layer. Sulfidation tests using Na2SO4 coatings resulted in the formation of a protective spinel and alpha-Fe2O3 phases. Preferential attack of the carbide phase by hydrogen was not observed after 350 h at 871 C.

Lemkey, F. D.↗
NASA NTRS1984

Space-charge behavior of 'Thin-MOS' diodes with MBE-grown silicon films

Basic theoretical and experimental characteristics of a novel 'Thin-MOS' technology, which has promising aspects for integrated high-frequency devices up to several hundred gigahertz are presented. The operation of such devices depends on charge injection into undoped silicon layers of about 1000-A thickness, grown by molecular beam epitaxy on heavily doped substrates, and isolation by thermally grown oxides of about 100-A thickness. Capacitance-voltage characteristics measured at high and low frequencies agree well with theoretical ones derived from uni and ambipolar space-charge models. It is concluded that after oxidation the residual doping in the epilayer is less than approximately 10 to the 16th/cu cm and rises by 3 orders of magnitude at the substrate interface within less than 100 A and that interface states at the oxide interface can be kept low.

Lieneweg, U.↗
NASA NTRS1993

On-Chip p-MOSFET Dosimetry

On-chip p-FETs were developed to monitor the radiation dose of n-well CMOS ICs by monitoring threshold voltage shifts due to radiation induced oxide and interface charge.

FETs↗
NASA NTRS1979

Some TEM observations of Al2O3 scales formed on NiCrAl alloys

The microstructural development of Al2O3 scales on NiCrAl alloys has been examined by transmission electron microscopy. Voids have been observed within grains in scales formed on a pure NiCrAl alloy. Both voids and oxide grains grew measurably with oxidation time at 1100 C. The size and amount of porosity decreased towards the oxide-metal growth interface. It was postulated that the voids resulted from an excess number of oxygen vacancies near the oxide-metal interface. Short-circuit diffusion paths were discussed in reference to current growth stress models for oxide scales. Transient oxidations of pure, Y-doped, and Zr-doped NiCrAl was also examined. Oriented alpha-(Al,Cr)2O3 and Ni(Al,Cr)2O4 scales often coexisted in layered structures on all three alloys. Close-packed oxygen planes and directions in the corundum and spinel layers were parallel. The close relationships between oxide layers provided a gradual transition from initial transient scales to steady state Al2O3 growth.

Smialek, J.↗
NASA NTRS1996

Mullite fiber reinforced reaction bonded Si3N4 composites

Fracture toughnesses of brittle ceramic materials have been improved by introducing reinforcements and carefully tailored interface layers. Silicon carbide and Si3N4 have been emphasized as matrices of structural composites intended for high temperature service because they combine excellent mechanical, chemical, thermal and physical properties. Both matrices have been successfully toughened with SiC fibers, whiskers and particles for ceramic matrix composite (CMC) parts made by sintering, hot pressing or reaction forming processes. These SiC reinforced CMCs have exhibited significantly improved toughnesses at low and intermediate temperature levels, as well as retention of properties at high temperatures for selected exposures; however, they are vulnerable to attack from elevated temperature dry and wet oxidizing atmospheres after the matrix has cracked. Property degradation results from oxidation of interface layers and/or reinforcements. The problem is particularly acute for small diameter (-20 tim) polymer derived SiC fibers used for weavable toes. This research explored opportunities for reinforcing Si3N4 matrices with fibers having improved environmental stability; the findings should also be applicable to SiC matrix CMCs.

Saleh, T.↗