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Results for “phosphorus doping”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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38 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Substrate orientation dependence of enhanced epitaxial regrowth of silicon

This work extends the study of dopant-enhanced epitaxial regrowth rate of amorphized Si from the 100 to the 110 and 111 line orientations of Si. Boron and phosphorus dopants are considered. The annealing temperatures are 500 and 550 C. Phosphorus enhances the growth rates in all three orientations by a constant factor of 8.1 + or - 0.9. Boron produces a higher enhancement factor of 12.2 + or - 1.2, except in the case of 100. Implications of the results on various growth models are considered. The crystalline quality of regrown 111 layers is improved in the doped samples.

Ho, K. T.↗
NASA NTRS2004

High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates

SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.

Alterovitz, Samuel A.↗