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Development of a hand-held long wavelength infrared (LWIR) camera at the Jet Propulsion Laboratory demonstrates the potential of quantum well infrared photodetector (QWIP) technology for simplifying the design and construction of a highly sensitive infrared imaging system.
Spectrally selective photodetectors for the middle and vacuum ultraviolet
Spectrally selective photodetector for middle and vacuum ultraviolet
Characteristics of vacuum deposited thin film cadmium sulfide photodetectors for space navigation
We have demonstrated red-shifting of the wavelength response of a bound-to-continuum p-type ultra-thin InGaAs/Inp quantum well infrared photodetector after growth via rapid thermal annealing. Compared to the as-grown detector, the peak spectral response of the annealed detector was shifted to longer wavelength without any major degradation in responsivity characteristics.
In this paper, we discuss the development of very sensitive long wavelength infrared (LWIR) GaAs/AlGal-xAs Quantum well infrared photodetectors (QWIPS), fabrication of random reflectors for efficient light coupling, and the demonstration of a LWIR 256 X 256 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (NE-delta-T) of 25 mK has been achieved.
Long wavelength infrared (LWIR) detectors, 8 (micro)m to 12 (micro)m, are of great interest for a variety of ground-based and space-borne applications. These applications have placed stringent requirements on the performance of the infrared detectors and arrays including high detectivity, low dark current, uniformity, radiation hardness, and low power dissipation. I will discuss the development and progress of GaAs based long-wavelength quantum well infrared photodetectors (QWIPs) to meet those stringent requirements and the demonstration of a 9 (micro)m cutoff 640x480 QUIP focal plane array camera. The noise equivalent temperature difference of the focal plane array is 25 mK at 300 K background and the operating temperature is 70 K.
A 9 (micro)m 256x256 hand-held quantum well infrared photodetector (QWIP) camera has been demonstrated. Excellent imagery, with a noise equivalent differential temperature (NE(gamma)) of 26 mK has been achieved. In this presentation, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array, its performance in quantum efficience, NA(gamma), minimum resolvable temperature (MRTD), uniformity, operability, and its applications.
We have developed a first generation 15 GaAs/AlGaAs 128x128 quantum well infrared photodetectors (QWIPSs) focal plane array (FPA) for a staring infrared (IR) sensor system. The photoconductive QWIPs of the 128x128 FPAs were then fabricated by wet chemical etching through the photosensitive GaAs/AlGaAs multi quantum well layers into the 1 thick doped GaAs contact layer. The pitch of the FPA is 50 m and the actual pixel size is 38x38m2.
There has been much interest in very long-wavelength quantum well infrared photodetectors and associated intersubband absorption due to their mature technology and the possibility of producing high performance large area two-dimensional imaging arrays.
In this paper, we discuss the development of very sensitive long wavelength infrared GaAs/AlxGa1-xAs quantum well infrared photodetectors (QWIPs) based on bound-to-quasibound intersubband transition, fabrication of light coupling schemes for efficient light coupling, and demonstration of several long wavelength infrared cameras based on QWIP focal plane arrays.
We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi-insulating GaAs substrate.
Long wavelength Quantum Well Infrared Photodetector (QWIP) cameras developed at the Jet Propulsion Laboratory demonstrate the potential of GaAs/A1xGa1-xAs QWIP technology for highly sensitive, low power, low cost, and highly uniform large format FPA imaging systems.
The performance of GaAs/AlGaAs quantum well infrared photodetectors (QWIP) specified in terms of background limited temperature T*** and specific detectivity D* has been calculated based on realistic detector parameters.
One of the simplest device realizations of the classic particle-in-the-box problem of basic quantum mechanics is the Quantum Well Infrared Photodetector (QWIP). Optimization of the detector design and material growth and processing has culminated in the realization of a 15 ??utoff 128x128 focal plane array camera and a camera with large (256x256 pixel) focal plane array of QWIPs which can see at 8.5 ??holding forth great promise for a variety of applications in the 6-25 ??avelength range. This paper discusses the physics of the QWIP and QWIP technology development at Jet Propulsion Laboratory
Quantum Well Infrared Photodetectors do not respond to normal incident light due to the Quantum mechanical selection rules associated with intersubband transitions.
High performance long-wavelength GaAs/AlxGa1-xAs quantum well infrared photodetectors for low background applications have been demonstrated.