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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

In-Phase Power-Combined Frequency Tripler at 300 GHz

This design starts with commercial 85- to 115-GHz sources that are amplified to as much as 250 mW using power amplifiers developed for the Herschel Space Observatory. The frequency is then tripled using a novel waveguide GaAs Schottky diode frequency tripler. This planar diode produces 26 mW at 318 GHz. Peak conversion efficiency is over 15 percent, and the measured bandwidth of about 265 - 30 GHz is limited more by the driving source than by the tripler itself. This innovation is based on an integrated circuit designed originally for a single-chip 260- to 340-GHz balanced tripler. The power-combined version has two mirror-image tripler chips that are power-combined in-phase in a single waveguide block using a compact Y-junction divider at the input waveguide, and a Y-junction combiner at the output waveguide. The tripler uses a split-block waveguide design with two independent DC bias lines.

Maestrini, Alain↗
NASA NTRS1991

Planar Schottky barrier mixer diodes for space applications at submillimeter wavelengths

Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.

Bishop, W. L.↗
NASA NTRS1989

BIN Diode For Submillimeter Wavelengths

Diode formed by selective doping during epitaxial growth, starting with semi-insulating substrate. Use of high-mobility semiconductors like GaAs extends cutoff frequency. Either molecular-beam epitaxy (MBE) or organometallic chemical-vapor deposition used to form layers of diode. Planar growth process permits subsequent fabrication of arrays of diodes by standard photolithographic techniques, to achieve quasi-optical coupling of submillimeter radiation. Useful for generation of harmonics or heterodyne mixing in receivers for atmospheric and space spectroscopy operating at millimeter and submillimeter wavelengths. Used as frequency doublers or triplers, diodes of new type extend frequency range of present solid-state oscillators.

Maserjian, J.↗
NASA NTRS1987

Diode Structure for Microwave and Infrared Applications

Microwave signals switched or modulated optically. Planar diode with transparent cathode made in BaAs, Si, and InSb versions. Depending on specific configuration and material, such diode used for optical modulation of microwave signal or as infrared detector. Transparent cathode fabricated on GaAs diode so diode illuminates to generate and control short-circuit current.

Alcorn, George↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Modeling a Thermionic Electron Source Using a Physics-Informed Neural Network

We explore the application of Physics-Informed Neural Networks (PINNs) for simulation of thermionic electron sources. This is motivated by the need for quick surrogate models used to simulate such sources within a digital twin of a complete particle accelerator. Here, a PINN was developed on a simplified model of the thermionic source: the planar diode. This model very accurately simulated the system, and performed significantly better than a traditional neural network while also using less training data. We hope to apply this proof-of-concept in motivating the development of a PINN model for a full thermionic electron source at the University of Chicago.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1995

Building an LO source at 1036 GHz for a receiver

The goal of the UMass work on this grant was to build an LO source at 1036 GHz for a receiver which was to be built at JPL. The 1 THz source will consist of a high power Gunn oscillator at 86 GHz followed by a cascaded pair of planar diode doublers and finally a whisker contacted tripler. All multipliers will use single mode waveguide mounts. This use of single mode waveguide even for the final mount is a departure from the original plan, and reflects the progress that has been made in fabricating small structures. The advantages to the use of waveguide over a quasi-optical approach are that the complete system is much more compact, and much easier to use.

Erickson, Neal R.↗
NASA NTRS2004

THz Instrumentation for the Herschel Space Observatory's Heterodyne Instrument for Far Infrared

The Heterodyne Instrument for Far Infrared (HIFI) on ESA's Herschel Space Observatory utilizes a variety of novel RF components in its five SIS receiver channels covering 480-1250 GHz and two HEB receiver channels covering 1410-1910 GHz. The local oscillator unit will be passively cooled while the focal plane unit is cooled by superfluid helium and cold helium vapors. HIFI employs W-band GaAs amplifiers, InP HEMT low noise IF amplifiers, fixed tuned broadband planar diode multipliers, high power W-bapd Isolators, and novel material systems in the SIS mixers. The National Aeronautics and Space Administration through the Jet Propulsion Laboratory is managing the development of the highest frequency (1119-1250 GHz) SIS mixers, the local oscillators oscillators for the three highest frequency receivers as well as W-band power amplifiers, high power W-band isolators, varactor diode devices for all high frequency multipliers and InP HEMT components for all the receiver channels intermediate frequency amplifiers. The NASA developed components represent a significant advancement in the available performance. This paper presents an update of the performance and the current state of development.

local oscillators↗
NASA NTRS2004

Design of a Wideband 900 GHz Balanced Frequency Tripler for Radioastronomy

We report on the design of a fix-tuned split-block waveguide balanced frequency tripler working nominally at 900GHz. It uses a GaAs Schottky planar diode pair in a balanced configuration. The circuit will be fabricated with JPL membrane technology in order to minimize dielectric loading. The multiplier is bias-less to dramatically ease the mounting and the operating procedure. At room temperature, the expected output power is 50- 130 (micro)W in the band 800-970 GHz when the tripler is pumped with 4mW. By modifying the waveguide input and output matching circuit, the multiplier can be tuned to operate at lower frequencies.

Schottky diode multipliers↗
NASA NTRS2004

Design of a Wideband 6-Anode Frequency Tripler at 300 GHz with Optimum Balance

We report on the design methodology of a fix-tuned split-block waveguide balanced frequency tripler working nominally at 300 GHz. It features six GaAs Schottky planar diodes in a balanced configuration. The circuit will be fabricated with JPL membrane technology in order to minimize dielectric loading and insure an accurate and uniform thickness of the substrate. The multiplier power handling is limited by the breakdown voltage of the diodes that depends on the doping level of the active layer. With six diodes, the current choice for the doping level leads to medium power handling capabilities of about 50 mW. Increasing the number of diodes to eight would be an option but would lead to increased difficulties in design and fabrication.

Schottky diode multipliers↗
NASA NTRS2006

A High Efficiency Multiple-Anode 260-340 GHz Frequency Tripler

We report on the fabrication at the Jet Propulsion Laboratory of a fixed-tuned split-block waveguide balanced frequency tripler working in the 260-340 GHz band. This tripler will be the first stage of a x3x3x3 multiplier chain to 2.7 THz (the last stages of which are being fabricated at JPL) and is therefore optimized for high power operation. The multiplier features six GaAs Schottky planar diodes in a balanced configuration integrated on a GaAs membrane. Special attention was put on splitting the input power as evenly as possible among the diodes in order to ensure that no diode is overdriven. Preliminary RF tests indicate that the multiplier covers the expected bandwidth and that the efficiency is in the range 1.5-7.5 % with 100 mW of input power.

local oscillators↗
NASA NTRS2005

Multi-Anode Frequency Triplers at Sub-Millimeter Wavelengths

We report on the design methodology of fix-tuned split-block waveguide balanced frequency triplers working at 300,600 and 900 GHz. They feature four to six GaAs Schottky planar diodes in a balanced configuration. A 6-anode 300 GHz tripler, a 6-anode 560 GHz tripler and a 4-anode 900 GHz tripler will be fabricated with JPL membrane technology in order to minimize dielectric loading and ensure accurate thickness of the substrate. A 4-anode 600 GHz tripler was fabricated with JPL substrateless technology that delivers 0.8-1.6mW in the 540-640 GHz band at room temperature. When cooled to l2OK this tripler delivers 2-4mW from 540 to 640 GHz.

Schottky diodes↗
NASA NTRS2004

THz Local Oscillator Technology

The last decade has seen a number of technological advancements that have now made it possible to implement fully solid state local oscillator chains up to 2 THz. These chains are composed of cascaded planar multiplier stages that are pumped with W-band high power sources. The high power W-band sources are achieved by power combining MMIC amplifiers and can provide in access of 150 mW with about 10% bandwidth. Planar diode technology has also enabled novel circuit topologies that can take advantage of the high input power and demonstrate significant efficiencies well into the THz range. Cascaded chains to 1.9 THz have now been demonstrated with enough output power to successfully pump hot-electron bolometer mixers in this frequency range. An overview of the current State-of-the-Art of the local oscillator technology will be presented along with highlighting future trends and challenges.

multipliers↗