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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Design, Analysis, Comparison, and Experimental Validation of Insulated Metal Substrates for High-Power Wide-Bandgap Power Modules

Direct bonded copper (DBC) substrates used in power modules have limited heat spreading and manufacturing capability due to ceramic properties and manufacturing technology. The ceramic and copper bonding is also subject to high mechanical stress due to coefficient of thermal expansion mismatch between the copper and the ceramic. For wide-bandgap (WBG) devices, it is of interest exploring new substrate technologies that can overcome some of the challenges of direct bonded copper substrates. In this technical paper, the design, analysis, and comparison of insulated metal substrates (IMSs) for high-power wide-bandgap semiconductor-based power modules are discussed. This paper starts with technical description and discussion of state-of-the-art DBC substrates with different ceramic insulators such as aluminum nitride (AlN), Al 2 O 3 , and Si 3 N 4 . Next, an introduction of IMSs and their material properties, and a design approach for SiC (silicon carbide) metal-oxide-semiconductor field-effect transistor (MOSFET)-based power modules for high-power applications is provided. The influence of dielectric thickness on the power handling capability of the substrate are also discussed. The designed IMS and DBC substrates were characterized in terms of steady-state and transient thermal performance using finite element simulation. Finally, the performance of the IMS and DBC are validated in an experimental setup under different loading and cooling temperature conditions. We report the simulation and experimental results showed that the IMS can provide high steady-state thermal performance for high-power modules based on SiC MOSFETs. Furthermore, the IMS provided enhanced transient thermal performance, which provided a reduced junction temperature when the module is operated at low fundamental output frequencies in traction drive systems.

42 ENGINEERING↗
NASA NTRS1987

Photovoltaic power modules for NASA's manned space station

The capability and the safety of manned spacecraft are largely dependent upon reliable electric power systems. Two similar space power systems able to survive the low Earth orbit environment, are being considered for NASA's Manned Space Station (SS), scheduled to begin operation in the mid 1990's. The Space Station Electric Power System (EPS) is composed of Photovoltaic (PV) Power Modules, Solar Dynamic (SD) Power Modules, and the Power Management and Distribution (PMAD) System. One EPS configuration will deliver 37.5 kW of PV based, utility grade, ac power to SS users. A second 75 kWe PV based EPS option is also being considered for SS deployment. The two EPS options utilize common modules and differ only in the total number of PV Power Modules used. Each PV Power Module supplies 18.75 kWe of ac power and incorporates its own energy storage and thermal control. The general requirements and the current preliminary design configuration of the Space Station PV Power Modules are examined.

Tatro, Charles A.↗
NASA NTRS1988

Photovoltaic power modules for NASA's manned Space Station

The capability and the safety of manned spacecraft are largely dependent upon reliable electric power systems. Two similar space power systems able to survive the low earth orbit environment, are being considered for NASA's Manned Space Station (SS), scheduled to begin operation in the mid 1990's. The Space Station Electric Power System (EPS) is composed of Photovoltaic (PV) Power Modules, Solar Dynamic (SD) Power Modules, and the Power Management and Distribution (PMAD) System. One EPS configuration will deliver 37.5 kW of PV based, utility grade, ac power to SS users. A second 75 kWe PV based EPS option is also being considered for SS deployment. The two EPS options utilize common modules and differ only in the total number of PV Power Modules used. Each PV Power Module supplies 18.75 kWe of ac power and incorporates its own energy storage and thermal control. The general requirements and the current preliminary design configuration of the Space Station PV Power Modules are examined.

Tatro, C. A.↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2018

Integrated packaging of multiple double sided cooling planar bond power modules

An integrated double sided cooled power module has one or multiple phase legs configuration including one or more planar power packages, each planar power package having an upper power switch unit and a lower power switch unit directly bonded and interconnected between two insulated power substrates, and further sandwiched between two heat exchangers via direct bonds. A segmented coolant manifold is interposed with the one or more planar power packages and creates a sealed enclosure that defines a coolant inlet, a coolant outlet and a coolant flow path between the inlet and the outlet. A coolant circulates along the flow path to remove heat and increase the power density of the power module.

42 ENGINEERING↗
DOE OSTI2014

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

Here we present a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density application. Specifically, a silicon-on-insulator (SOI)-based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermosensitive electrical parameter and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
NASA NTRS2017

Non-Flow Through Fuel Cell Power Module Demonstration on the SCARAB Rover

NASA demonstrated the Advanced Product Water Removal (APWR) Non-Flow-Through (NFT) PEM fuel cell technology by powering the Scarab rover over three-(3) days of field operations. The latest generation APWR NFT fuel cell stackwas packaged by the Advanced Exploration Systems (AES) Modular Power Systems (AMPS) team into a nominallyrated 1-kW fuel cell power module. This power module was functionally verified in a laboratory prior to field operations on the Scarab rover, which concluded on 2 September 2015. During this demonstration, the power module satisfied all required success criteria by supporting all electrical loads as the Scarab navigated the NASA Glenn Research Center.

Fuel Cell↗
NASA NTRS1989

Launch packaging options for the photovoltaic power module cargo element

The National Aeronautics and Space Administration recently embarked on the Space Station Freedom program, which will utilize the Shuttle Orbiter for transportation to orbit. This task will be accomplished with a number of flights over several years. Each flight is unique in terms of the hardware that is manifested and the method by which it is integrated to form viable cargo elements. Work Package 4 is responsible for the electric power system for Space Station Freedom, and was delegated the authority to develop a photovoltaic (PV) power module cargo element. The PV power module consists of several unique assemblies. The first of these is the combined solar array/beta gimbal assembly. The remaining assemblies form the single combined integrated equipment assembly for each PV power module. These three combined assemblies are packaged into a launch cradle to form the PV power module cargo element, which is placed in the cargo bay of the Shuttle Orbiter for transportation to orbit. Various constraints determine the packaging options for the three PV power module combined assemblies. The size and shape of the combined assemblies in relation to the Shuttle Orbiter cargo bay dimensions and other manifested hardware are ultimately a factor in determining the acceptable packaging schemes for the PV power module cargo element. Several packaging options for the PV power module cargo element are presented. These options are discussed in terms of their impact on the overall flight hardware manifest as determined by the various constraints.

Hoberecht, Mark A.↗
DOE OSTI2026

Review of Ultrafast Switching Power Modules: Trends, Challenges, and Technical Solutions

Benefiting from the superior properties of wide-bandgap semiconductor materials, wide-bandgap power devices demonstrate exceptional switching performance, enabling more efficient and compact power electronics systems. However, ultrafast switching poses challenges to the reliability of the system in terms of severe oscillations and voltage overshoot, electromagnetic interference, and increased risk of partial discharge. By developing advanced power module packaging for fast-switching power devices, the above-mentioned challenges can be mitigated at the packaging level, enabling the full utilization of the fast-switching capability of wide-bandgap devices. Meanwhile, such technology also lays the groundwork for packaging next-generation power devices with even higher blocking voltage and faster switching speed. In this paper, a comprehensive review of ultrafast switching power modules has been made, including the benefits and status of ultrafast switching power modules, challenges brought by ultrafast switching, and promising technologies to address these challenges. In addition, future development trends and research gaps are also discussed in this paper. Furthermore, this review can serve as a reference for future wide-bandgap power module packaging design.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Reliability Analysis of Large-Area, Low Pressure-Assisted Silver Sintering for Medium-Voltage Power Modules

Multi-layer insulating ceramic substrates can enable medium-voltage (MV) power modules with reduced peak electric field. This benefit is particularly important for MV silicon carbide (SiC) MOSFETs due to their higher operating voltages. Large-area, low-pressure assisted silver sintering is a potential solution for bonding substrates to create a multi-layer structure. The voiding content and defect density of the bond used to create the multi-layer substrate stack-up is critical to the reliability of the power module and the thermal performance, as this bond is in the primary path for heat dissipation in the power module structure. Here, samples of two-layer direct bonded aluminum (DBA) stacks have been fabricated and subjected to thermal cycling to analyze their reliability. Passive thermal cycling from -40 degrees C to 200 degrees C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1000 thermal cycles, adhesive failures are observed between the sintered silver and the DBA surface. Cross-sections were cut and imaged via optical microscope and SEM. Thermal analyzer measurements are recorded on a 10-kV SiC power module utilizing the sintered DBA substrate stacks.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS1978

The 25 kW power module evolution study. Part 1: Payload requirements and growth scenarios

Payload power level requirements and their general impact on the baseline and growth versions of the 25 kW power module during the 1983 to 1990 period are discussed. Extended duration Orbiter sortie flight, supported by a power module, with increased payload power requirements per flight, and free-flyer payload missions are included. Other payload disciplines considered, but not emphasized for the 1983 to 1986 period include astrophysics/astronomy, earth observations, solar power satellite, and life sciences. Of these, only the solar power satellite is a prime driver for the power module.

Source record↗
DOE OSTI2016

Comparison between 1.7 kV SiC SJT and MOSFET Power Modules

Abstract— In this paper, a comprehensive evaluation work on 1.7 kV SiC Super Junction Transistor (SJT) power module and 1.7 kV SiC MOSFET power modules is presented. Both device static and dynamic performance is extracted and compared at wide device current range and temperature range. The data presented in this paper can be used as input for medium voltage power conversion system power transistor selection, gate drive design and system level thermal management design. Since the SiC SJT is a new power transistor with unique current driven mechanism. A dedicated section discusses the SiC SJT power module gate drive configuration and device false turn on suppress as well. In a summary, 1.7 kV SiC SJT shows superior on state conductivity, but similar switching performance compared to 1.7 kV SiC MOSFET power modules.

gate drive↗
NASA NTRS2008

Update on Development of SiC Multi-Chip Power Modules

Progress has been made in a continuing effort to develop multi-chip power modules (SiC MCPMs). This effort at an earlier stage was reported in 'SiC Multi-Chip Power Modules as Power-System Building Blocks' (LEW-18008-1), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 28. The following recapitulation of information from the cited prior article is prerequisite to a meaningful summary of the progress made since then: 1) SiC MCPMs are, more specifically, electronic power-supply modules containing multiple silicon carbide power integrated-circuit chips and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking; 2) The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules; and, 3) In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications. Because identical SiC MCPM building blocks could be utilized in such a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. This concludes the information from the cited prior article. The main activity since the previously reported stage of development was the design, fabrication, and testing a 120- VDC-to-28-VDC modular power-converter system composed of eight SiC MCPMs in a 4 (parallel)-by-2 (series) matrix configuration, with normally-off controllable power switches. The SiC MCPM power modules include closed-loop control subsystems and are capable of operating at high power density or high temperature. The system was tested under various configurations, load conditions, load-transient conditions, and failure-recovery conditions. Planned future work includes refinement of the demonstrated modular system concept and development of a new converter hardware topology that would enable sharing of currents without the need for communication among modules. Toward these ends, it is also planned to develop a new converter control algorithm that would provide for improved sharing of current and power under all conditions, and to implement advanced packaging concepts that would enable operation at higher power density.

Lostetter, Alexander↗
DOE OSTI2024

Multiphysics Co-Optimization Design and Analysis of Double-Side Cooled Silicon Carbide-Based Power Module: Preprint

With the rapid growth of Electric Vehicles (EVs) and Hybrid Electric Vehicles (HEVs), much more rigorous design targets have been set for automotive power electronics, including high power density, high reliability, and low cost. Novel power module and inverter technologies based on wide bandgap (WEG) semiconductors have been developed to meet these design targets, while providing optimal power semiconductor operating temperature and promising thermomechanical performance. Compared with conventional cooling techniques which are normally applied only on one side of power module, double-side cooling approach is now believed to be the solution to enable high power density and low thermal resistance of WEG semiconductor-based power electronics. In this work, we develop a three-phase power module that is double-sided cooled using dielectric fluid jet impingement. In each phase, four silicon carbide (SiC) power semiconductors are bonded to copper busbars without electrical insulation layers. A finite element analysis (FEA) model is created for thermal and thermomechanical analysis. Based on FEA modeling results, we select particular dimensions for a parametric study to optimize thermal and mechanical performance. Using a multi-objective genetic algorithm (MOGA)-based optimization method, we have minimized the maximum junction temperature and thermal stresses within the power module. The multiphysics co-optimization approach has enabled an efficient design process of power modules with greatly reduced computational cost, as compared to conventional processes that rely on exhaustive numerical simulations and iterations.

ADVANCED PROPULSION SYSTEMS↗
NASA NTRS1979

25 kW power module evolution study

This paper presents a study of evolutionary growth concepts for the 25 kW power module to augment STS mission support future capabilities. The study aimed to establish user payload requirements, define evolution methods for system initial operational capability, and formulate a development program and conceptual designs. The payload requirements analysis focused on material processing in space, public services, and solar terrestrial observations; evolutionary system concepts were evaluated to derive the power module and system support requirements, and four reference orbits were used to construct the nominal program scenario. The mission accomodations analysis evaluated the capability of the nominal program scenario and associated power module concepts to meet user needs. Finally, the recommended modular design consisting of electric power, attitude control, thermal control, and command and data handling is described, and it is concluded that the 25 kW power module is a logical first step to support the near term NASA sortie and free-flyer mission requirements.

Overall, J. W., Jr.↗