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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Comparison of Nb and Ta Pentoxide Loss Tangents for Superconducting Quantum Devices

Superconducting transmon qubits are commonly made with thin-film Nb wiring, but recent studies have shown increased performance with Ta wiring. In this work, we compare the resonator-induced single photon, millikelvin dielectric loss for pentoxides of Nb (Nb2O5) and Ta (Ta2O5) in order to further understand limiting losses in qubits. Nb and Ta pentoxides of three thicknesses are deposited via pulsed laser deposition onto identical coplanar waveguide resonators. The two-level system (TLS) loss in Nb2O5 is determined to be about 30% higher than that of Ta2O5. This work indicates that qubits with Nb wiring are affected by higher loss arising from the native pentoxide itself, likely in addition to the presence of suboxides, which are largely absent in Ta.

Goronzy, D. P. [Northwestern U.]↗
DOE OSTI2026

Precise 2D electric field density simulations for superconducting quantum devices

Dielectric loss due to two-level systems is a limiting factor for superconducting qubit relaxation times. These losses arise mostly from nanometer-scale interfacial defect regions in superconducting devices with planar dimensions of microns to millimeters, thus making it resource intensive to accurately simulate the electric field density in these regions with traditional electromagnetic solvers. In this work, we demonstrate a fast boundary integral equation solver that allows precise simulation of electric field density in these thin regions, showing a speedup of around two orders of magnitude over traditional solvers, with relative errors around $10^{-7}$ for a ten-minute solution runtime. By computing participation ratios through Green's first identity without squaring the electric field, our approach is less susceptible to the field singularities near conductor corners. We apply this solver to a basic untrenched coplanar waveguide cross-section, showing that the common assumption of participation ratio linearity with dielectric constant holds well for some interfaces and not others; in particular, while the metal-air (MA) top and corner follow this linear relationship strongly, the MA sidewall does not. We then compare isotropic and anisotropic etching, showing that the MA sidewall and the metal-air-substrate triple junction are the most strongly affected. We are currently leveraging this solver to explore geometries that will uniquely isolate the participation ratios of the different dielectrics. Finally, we are working to combine this solver framework with a full 3D microwave solver to accurately calculate participation ratios for the thin dielectrics that are known sources of loss in superconducting qubits.

Gimbutas, Z. [NIST, Boulder] (ORCID:00000003320982↗
DOE OSTI2026

Coupling of Klein-Andreev resonant states in B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 -graphene-B⁢i 2⁢ S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 devices

Quantum devices require coherent coupling over macroscopic distances. Recently, resonances due to Klein tunneling and Andreev reflection states (KARS) have been observed in a naturally occurring p-n junction at the interface between B⁢i 2 ⁢S⁢r 2 ⁢CaC⁢u 2 ⁢O 8+𝑥 (BSCCO), a high−⁢𝑇 c superconductor (HTS), and graphene. The resonances appear as conductance oscillations with gating. Here, in this study, we show coupling between the KARS in BSCCO-graphene-BSCCO devices of varying separation (L). The coupling is evidenced by a power-law decay of resonance period as L increases from tens of nanometers to microns. These results demonstrate the long-distance coupling of KARS cavities in graphene-HTS junctions. The length dependence seen in experiments is supported by single-particle spectral functions which show KARS are coupled by transport modes in graphene. The strong coupling between KARS in BSCCO-graphene-BSCCO devices showcases the possibility of HTS-graphene junctions for quantum circuits and unconventional Josephson junctions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Systems and methods for quantum optical device authentication

Quantum optical device authentication technologies are described herein. A first device includes an optical transmitter transmits a plurality of pulses to an optical receiver included on a second device. The optical pulses each have one of two non-orthogonal optical states. The optical receiver measures each of the pulses and the second device records a measured value of the optical state of each pulse. Subsequently, the second device transmits the measured values of the optical states of the pulses to the first device. The first device outputs an indication of whether the second device is authenticated based upon the measured values received from the second device and the optical states of the pulses transmitted by the optical transmitter.

Soh, Daniel Beom Soo↗
DOE OSTI2023

Reliable Devices Yield Stable Quantum Computations

Stable quantum computation requires noisy results to remain bounded even in the presence of noise fluctuations. Yet non-stationary noise processes lead to drift in the varying characteristics of a quantum device that can greatly influence the circuit outcomes. Here we address how temporal and spatial variations in noise relate device reliability to quantum computing stability. First, our approach quantifies the differences in statistical distributions of characterization metrics collected at different times and locations using Hellinger distance. We then validate an analytical bound that relates this distance directly to the stability of a computed expectation value. Our demonstration uses numerical simulations with models informed by the washington superconducting transmon device. We find that the stability metric is consistently bounded from above by the corresponding Hellinger distance, which can be cast as a specified tolerance level. These results underscore the significance of reliable quantum computing devices and the impact for stable quantum computation.

Dasgupta, Samudra↗
DOE OSTI2020

Optimization of the electron transport layer in quantum dot light-emitting devices

Quantum dot light-emitting devices have emerged as an important technology for display applications. Their emission is a result of recombination between positive and negative charge carriers that are transported through the hole and electron conductive layers, respectively. The selection of electron or hole transport materials in these devices not only demands the alignment of energy levels between the layers but also balances the flow of electrons and holes toward the recombination sites. In this work, we examine a method for device optimization through control of the charge carrier kinetics. We employ impedance spectroscopy to examine the mobility of charge carriers through each of the layers. The derived mobility values provide a path to estimate the transition time of each charge carrier toward the emitting layer. We suggest that an optimal device structure can be obtained when the transition times of both charge carriers toward the active layer are similar. Finally, we examine our hypothesis by focusing on thickness optimization of the electron transport layer.

36 MATERIALS SCIENCE↗
DOE OSTI2020

A quantum algorithm for evolving open quantum dynamics on quantum computing devices

Abstract Designing quantum algorithms for simulating quantum systems has seen enormous progress, yet few studies have been done to develop quantum algorithms for open quantum dynamics despite its importance in modeling the system-environment interaction found in most realistic physical models. In this work we propose and demonstrate a general quantum algorithm to evolve open quantum dynamics on quantum computing devices. The Kraus operators governing the time evolution can be converted into unitary matrices with minimal dilation guaranteed by the Sz.-Nagy theorem. This allows the evolution of the initial state through unitary quantum gates, while using significantly less resource than required by the conventional Stinespring dilation. We demonstrate the algorithm on an amplitude damping channel using the IBM Qiskit quantum simulator and the IBM Q 5 Tenerife quantum device. The proposed algorithm does not require particular models of dynamics or decomposition of the quantum channel, and thus can be easily generalized to other open quantum dynamical models.

42 ENGINEERING↗