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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Over 31% efficient indoor organic photovoltaics enabled by simultaneously reduced trap-assisted recombination and non-radiative recombination voltage loss

Indoor organic photovoltaics (OPVs) have shown great potential application in driving low-energy-consumption electronics for the Internet of Things. There is still great room for further improving the power conversion efficiency (PCE) of indoor OPVs, considering that the desired morphology of the active layer to reduce trap-assisted recombination and voltage losses and thus simultaneously enhance the fill factor (FF) and open-circuit voltage for efficient indoor OPVs remains obscure. Herein, by optimizing the bulk and interface morphology via a layer-by-layer (LBL) processing strategy, low leakage current and low non-radiative recombination loss can be synergistically achieved in PM6:Y6-O based devices. Detailed characterizations reveal the stronger crystallinity, purer domains and ideal interfacial contacts in the LBL devices compared to their bulk-heterojunction (BHJ) counterparts. The optimized morphology yields a reduced voltage loss and an impressive FF of 81.5%, and thus contributes to a high PCE of 31.2% under a 1000 lux light-emitting diode (LED) illumination in the LBL devices, which is the best reported efficiency for indoor OPVs. Additionally, this LBL strategy exhibits great universality in promoting the performance of indoor OPVs, as exemplified by three other non-fullerene acceptor systems. Finally, this work provides guidelines for morphology optimization and synergistically promotes the fast development of efficient indoor OPVs.

36 MATERIALS SCIENCE↗

Josephson Traveling Wave Parametric Amplifiers to Enable Future Neutrino Mass Measurements

Technologies for “quantum sensing" have the promise of dramatically improved sensitivity in some experiments that explore nuclear physics at the boundaries of our current knowledge. In particular, the Josephson Traveling Wave Parametric Amplifier (JTWPA) could enable future experiments such as Project 8 that use Cyclotron Radiation Emission Spectroscopy (CRES) to measure the absolute neutrino mass scale in tritium beta decays. CRES consists of detecting a signal of approximately one femtowatt of power radiated by electrons trapped in a 1-T magnetic field. The frequency of that radiation, around 27 GHz for a tritium endpoint electron, is inversely proportional to the electron energy. One of the significant challenges of a CRES experiment is the detection of minimal signal power levels. State-of-the-art transistor-based technologies will not likely achieve sufficient signal-to-noise ratio (SNR) in a competitive neutrino mass experiment. However, emerging quantum technologies have been demonstrated to operate at the fundamental lower limits of noise permitted by the laws of quantum mechanics. Of those technologies, JTWPAs appear to satisfy future performance needs with speed gain, bandwidth, and very low noise. We propose to bring together a group of neutrino physicists, experts in the needs of future neutrino mass measurements, with leaders in the field of quantum information science and JTWPA technology to develop JTWPAs appropriate for neutrino mass measurements.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Carbon in GaN as a nonradiative recombination center

Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon (⁠C N ) has been suggested to be a nonradiative recombination center in GaN devices, a complete recombination cycle including the two charge-state transition levels has not been previously described. In this work, we investigate the trap-assisted recombination process due to C N in GaN, including multiphonon emission, radiative recombination, trap-assisted Auger–Meitner (TAAM) recombination as well as thermal emission of holes. Our study shows the key role of TAAM processes at the high carrier densities relevant for devices. We also reveal the carrier-density regimes where thermal emission and radiative recombination are expected to play an observable role. Our results highlight that carbon concentrations exceeding ~10 17 cm −3 can have a noticeable impact on device efficiency, not just in GaN active layers but also in InGaN and AlGaN. Furthermore, our comprehensive formalism not only offers detailed results for carbon but also provides a general framework for assessing the multiple processes that participate in trap-assisted recombination in semiconductors.

36 MATERIALS SCIENCE↗

Effect of microstructure and neutron irradiation defects on deuterium retention in SiC

Retention of hydrogen isotopes is a critical concern for operating fusion reactors as retained tritium both activates components and removes scarce fuel from the fuel cycle. Radiation-induced displacement damage in SiC influences the retention of hydrogen isotopes compared to pristine SiC. Deuterium retention in neutron irradiated high purity SiC has been compared to different microstructures of non-irradiated high purity SiC using thermal desorption spectroscopy after gas charging and low energy ion implantation. Experimental results show lower deuterium retention in single crystal SiC than in polycrystal SiC indicating that grain boundaries are key trapping features in unirradiated SiC. Deuterium is released at lower temperatures in neutron irradiated polycrystal SiC compared to pristine polycrystal SiC, suggesting weaker trapping by radiation-induced defects compared to grain boundary trapping sites in the pristine materials. Low energy ion implantation caused a high deuterium release temperature, highlighting the sensitivity of deuterium release behaviour to radiation defect characteristics. First principles calculations have been conducted to identify energetically favourable trapping sites in SiC at the H ABc V Si and H TSi V C complexes, and migration barriers between interstitial sites. This helps interpret experimental results and derive effective diffusivity of hydrogen isotopes in SiC in the presence of vacancies.

36 MATERIALS SCIENCE↗

Pulse-shape analysis in Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 room-temperature radiation detectors

The effect of trapping of charge carriers on the shape of the charge pulses from room temperature nuclear detectors, based on a recently discovered quaternary semiconductor Cd 0.9 Zn 0.1 Te 0.98 Se 0.02 (CZTS), has been studied. Here, we present a charge-trapping model that explains the pulse shapes for its entire duration from radiation detectors containing multiple defect types. A piecewise continuous model, based on the movement of a large number of charge carriers rather than a single charge, has been proposed to explain the pulse shapes from planar room temperature nuclear detectors. An experimental method based on the model has been described to extract charge-trapping information. This model can be applied to similar semiconductor detectors with electrically active trap centers, in general, to extract information like pre-trapping drift times. Charge pulses from a CZTS planar detector, exposed to 5486 keV alpha particles emitted by a 241Am source, were acquired using a digitizer, and the pulse shapes were explained based on the proposed model. The pre-trapping drift times for electrons as well as holes in CZTS were calculated and studied as a function of operating bias voltage, and a contrast between their bias dependent behaviors was noticed, indicating the behavioral difference of electron and hole traps.

42 ENGINEERING↗

Acceleration of Near-IR Emission through Efficient Surface Passivation in Cd 3 P 2 Quantum Dots

Fast near-IR (NIR) emitters are highly valuable in telecommunications and biological imaging. The most established NIR emitters are epitaxially grown In x Ga 1-x As quantum dots (QDs), but epitaxial growth has several disadvantages. Colloidal synthesis is a viable alternative that produces a few NIR-emitting materials, but they suffer from long photoluminescence (PL) times. These long PL times are intrinsic in some NIR materials (PbS, PbSe) but are attributed to emission from bright trapped carrier states in others. We show that Cd 3 P 2 QDs possess substantial trap emission with radiative times >10 1 ns. Surface passivation through shell growth or coordination of Lewis acids is shown to accelerate the NIR emission from Cd 3 P 2 QDs by decreasing the amount of trap emission. This finding brings us one step closer to the application of colloidally synthesized QDs as quantum emitters.

36 MATERIALS SCIENCE↗

Airborne Acoustic Vortex End Effector‐Based Contactless, Multi‐Mode, Programmable Control of Object Surfing

Abstract Tweezers based on optical, electric, magnetic, and acoustic fields have shown great potential for contactless object manipulation. However, current tweezers designed for manipulating millimeter‐sized objects such as droplets, particles, and small animals exhibit limitations in translation resolution, range, and path complexity. Here, a novel acoustic vortex tweezers system is introduced, which leverages a unique airborne acoustic vortex end effector integrated with a three‐degree‐of‐freedom (DoF) linear motion stage, for enabling contactless, multi‐mode, programmable manipulation of millimeter‐sized objects. The acoustic vortex end effector utilizes a cascaded circular acoustic array, which is portable and battery‐powered, to generate an acoustic vortex with a ring‐shaped energy pattern. The vortex applies acoustic radiation forces to trap and spin an object at its center, simultaneously protecting this object by repelling other materials away with its high‐energy ring. Moreover, The vortex tweezers system facilitates contactless, multi‐mode, programmable object surfing, as demonstrated in experiments involving trapping, repelling, and spinning particles, translating particles along complex paths, guiding particles around barriers, translating and rotating droplets containing zebrafish larvae, and merging droplets. With these capabilities, It is anticipated that the tweezers system will become a valuable tool for the automated, contactless handling of droplets, particles, and bio‐samples in biomedical and biochemical research.

Li, Teng↗

Microstructural evolution in Cu-Nb processed via friction consolidation

Immiscible alloys, whether in well-mixed or layered forms, are of increasing interest based on their novel structural and functional properties, such as enhanced thermal stability against grain growth or radiation-induced defect trapping at the interfaces. To address the need for new approaches to tailor microstructures, the microstructural development of an immiscible Cu-Nb alloy processed via friction consolidation of elemental powders is investigated. Friction consolidation is a solid-phase processing technique that imparts severe plastic strain into a deforming volume resulting in elevated temperatures below the melting temperature of the alloy. Two distinct processing pathways were chosen to understand the effect of thermomechanical conditions on the final microstructure. The microstructure was characterized using scanning electron microscopy, scanning transmission electron microscopy, and X-ray diffraction techniques. Path 1 exhibited larger strain, strain rate, and temperature as compared with path 2. In path 1, agglomerated Nb particles were present in the recrystallized ultrafine-grained Cu matrix, while in path 2 extremely fine and dispersed Nb particles were present in a highly deformed Cu matrix. In both pathways, supersaturation of Cu in Nb lattices was noted, but not vice-versa. The asymmetry in mixing is explained based on deformation-based, thermodynamic and kinetic factors. These findings provide a pathway for creation of novel tailored microstructures and improved properties in any number of binary immiscible alloy systems.

Cu-Nb alloys, Microstructural refinement, Friction↗

The Magnetic Electron Ion Spectrometer: A Review of On-Orbit Sensor Performance, Data, Operations, and Science

Measurements from NASA’s Van Allen Probes have transformed our understanding of the dynamics of Earth’s geomagnetically-trapped, charged particle radiation. The Van Allen Probes were equipped with the Magnetic Electron Ion Spectrometers (MagEIS) that measured energetic and relativistic electrons, along with energetic ions, in the radiation belts. Accurate and routine measurement of these particles was of fundamental importance towards achieving the scientific goals of the mission. We provide a comprehensive review of the MagEIS suite’s on-orbit performance, operation, and data products, along with a summary of scientific results. The purpose of this review is to serve as a complement to the MagEIS instrument paper, which was largely completed before flight and thus focused on pre-flight design and performance characteristics. As is the case with all space-borne instrumentation, the anticipated sensor performance was found to be different once on orbit. Our intention is to provide sufficient detail on the MagEIS instruments so that future generations of researchers can understand the subtleties of the sensors, profit from these unique measurements, and continue to unlock the mysteries of the near-Earth space radiation environment.

47 OTHER INSTRUMENTATION↗

Ultrathin layer photocatalysts

A transparent ceramic substrate is covered by a photocatalyst layer, at least partially. The photocatalyst layer includes a semiconductor material that, upon exposure to electromagnetic radiation, forms a plurality of electrons and a plurality of holes that remain confined to the photocatalyst layer. The transparent ceramic substrate has a diameter that is larger than the wavelength of the electromagnetic radiation for light trapping.

Wang, Yifeng↗

Surface-Defect-Passivation-Enabled Near-Unity Charge Collection Efficiency in Bromide-Based Perovskite Gamma-Ray Spectrum Devices

Hybrid lead halide perovskites have superior charge transport properties to all-inorganic perovskites, but high-resolution spectroscopic radiation detectors have not been realized. Here we show that surface deep traps severely limit charge collection in formamidinium lead bromide (FAPbBr3) single-crystal devices, despite having a good bulk transport property. Three types of defect on the crystal surface, namely, FA vacancies, uncoordinated lead and Pb-Pb dimers caused by bromide loss, are found to form deep traps, resulting in non-radiative charge recombinations at the metal/perovskite interface. By tailoring the passivation functional groups, we find that ammonium bromide can passivate all these three deep traps on FAPbBr3 surfaces, improving the charge collection efficiency to near unity. The comparable bulk and surface recombination lifetimes indicate that all the surface defects are effectively passivated. Surface passivation also reduces the dark current by 10 times and decreases the dark counts by ~60 times. The energy resolution of the 137Cs spectra acquired using the FAPbBr3 detectors is improved from 5.7% to 1.7% when all the surface defects are passivated without changing the bulk properties, which is the best among solution-grown semiconductor detectors. Surface passivation is stable for more than six months, and FAPbBr3 spectroscopic detectors can operate at unprecedented high temperatures of more than 130 degrees C.

gamma ray↗

Investigation of defects in melt and solution grown perovskite CsPbBr 3 single crystals

Recently, there has been considerable interest in x-ray and gamma ray detectors with large volume and high energy resolution that operate at room temperature. To improve detector energy resolution, the carrier mobility-lifetime product needs to be increased, and the electronic trap state concentration needs to be minimized. Defect concentrations in the part per billion range can alter the charge transport and carrier recombination lifetime. In this work, thermally stimulated current spectroscopy measurements were systematically carried out in bulk halide perovskite single crystals of CsPbBr 3 over a temperature range of 80–320 K. The origins and trap parameters of CsPbBr 3 crystals from the solution growth and melt growth procedures were determined and compared. Trap concentrations were ranged from 1 × 10 11 to 1 × 10 16 cm –3 . Appreciable detector performance was observed for CsPbBr3 crystals with trap concentrations less than 1 × 10 14 cm –3 . The comparison of spectral responses of crystal samples grown using two different methods shows that, after purification, solution-grown crystals are comparable to melt-grown crystals in terms of low defect concentration and improved detector performance. Finally, for an improved mobility-lifetime product and enhanced spectral response to high energy radiation from fissile materials, trap states in either type of a crystal ingot must be reduced closer to 10 11 cm –3 .

36 MATERIALS SCIENCE↗

Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories

This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.

3-D NAND flash↗