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Results for “reactive sputtering”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Thermal and sputtered aluminum oxide coatings for high temperature electrical insulation

Aluminum oxide coatings have been investigated as electrically insulating layers for mounting thin film Pt-Pt/Rh thermocouples on gas turbine blade and vane alloys (MAR M200 + Hf and MAR M509). Thermal oxides were grown directly onto NiCoCrAlY and FeCrAlY coatings on these alloys at temperature between 1300 and 1400 K in oxygen partial pressures 10 to the -7th to 2 x 10 to the 4th Pa. Although these thermal oxides exhibited good adherence, analytical characterizations using electron and optical microscopy, as well as X-ray photoelectron spectroscopy showed that they had defects and impurities which limited their insulating ability. The insulating quality of the coating was greatly improved however by reactively sputtering an aluminum oxide film over the thermal oxide. Results are presented on the electrical performance of the 2-5 micron thick composite layers for temperatures up to 1300 K.

Kreider, K. G.↗
NASA NTRS1999

Polarity Effects of Substrate Surface in Epitaxial ZnO Film Growth

Epitaxial ZnO films were grown on the two polar surfaces (0-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. As a comparison, films are also deposited on the (000 I) Al203 substrates. It is found that the two polar surfaces have different photoluminescence (PL) spectrum, surface structure and morphology, which are strongly inference the epitaxial film growth. The morphology and structure of epitaxial films on the ZnO substrates are different from the film on the Al203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite Surface. The measurements of PL, low-angle incident x-ray diffraction, and atomic force microscopy of ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth using reactive sputtering deposition.

Zhu, Shen↗
DOE OSTI2024

Low‐Temperature Synthesis of Stable CaZn 2 P 2 Zintl Phosphide Thin Films as Candidate Top Absorbers

Abstract The development of tandem photovoltaics and photoelectrochemical solar cells requires new absorber materials with bandgaps in the range of ≈1.5–2.3 eV, for use in the top cell paired with a narrower‐gap bottom cell. An outstanding challenge is finding materials with suitable optoelectronic and defect properties, good operational stability, and synthesis conditions that preserve underlying device layers. This study demonstrates the Zintl phosphide compound CaZn 2 P 2 as a compelling candidate semiconductor for these applications. Phase‐pure, ≈500 nm‐thick CaZn 2 P 2 thin films are prepared using a scalable reactive sputter deposition process at growth temperatures as low as 100 °C, which is desirable for device integration. Ultraviolet‐visible spectroscopy shows that CaZn 2 P 2 films exhibit an optical absorptivity of ≈10 4 cm −1 at ≈1.95 eV direct bandgap. Room‐temperature photoluminescence (PL) measurements show near‐band‐edge optical emission, and time‐resolved microwave conductivity (TRMC) measurements indicate a photoexcited carrier lifetime of ≈30 ns. CaZn 2 P 2 is highly stable in both ambient conditions and moisture, as evidenced by PL and TRMC measurements. Experimental data are supported by first‐principles calculations, which indicate the absence of low‐formation‐energy, deep intrinsic defects. Overall, this study shall motivate future work integrating this potential top cell absorber material into tandem solar cells.

14 SOLAR ENERGY↗
DOE OSTI2025

Switching kinetics in ferroelectric zinc magnesium oxide thin films

The switching kinetics of RF-magnetron reactively sputtered ~200 nm thick Zn 1-x Mg x O (ZMO) ferroelectric thin films with x = 0.41 and x = 0.27 prepared on Pt/Ti/SiO 2 /Si substrates were studied at applied fields near the coercive fields, ranging from 3.4 to 5.1 MV cm -1 , and at temperatures ranging from room temperature to 100 °C. Polarization reversal in ZMO followss the Kolmogorov-Avrami-Ishibashi kinetics model for nucleation and growth at applied fields near the coercive field, and obeys an individual column switching (ICS) model at higher applied fields required to switch most of the spontaneous polarization. Switching in the high-applied field regime can be described using either the Gaussian or inverse gamma distribution functions depending on the mole fraction of magnesium in the film. The switching current transients of the high-Mg content ZMO film (x = 0.41) are always bi-modal, whereas the low Mg composition film (x = 0.27) is described by the Gaussian distribution initially following wake-up, and becomes bimodal with continued cycling. Rayleigh-like behavior of the dielectric constant revealed a simultaneous increase of the irreversible and decrease of the reversible contributions to the dielectric constant, which was ascribed to an increase in the density of mobile domain walls with cycling and resulted in faster switching.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2025

Synthesis, Stability, and Magnetic Properties of Antiperovskite Co 3 PdN

Experimental synthesis and characterization of theoretically predicted compounds are important steps in the materials discovery pipeline. Here, we report on the synthesis of Co 3 PdN, which was recently predicted to be a stable magnetic antiperovskite. The Co 3 PdN thin films were grown by reactive sputtering and were confirmed to form in an antiperovskite crystal structure. The thermal stability of the compound is demonstrated up to 600 K by in situ X-ray diffraction, though the phase persists at slightly higher temperatures (700 K) in an air-free magnetometer. Both ab initio calculations and magnetization measurements find Co 3 PdN to be ferromagnetic with an experimentally determined Curie temperature of T C = 560 ± 5 K. The saturation magnetization of 1.2 μ B /Co found in the experiment is slightly lower than the 1.7 μ B /Co value expected by theory. A narrow magnetic hysteresis loop with a coercive field of 100 Oe at low temperature suggests that Co 3 PdN might be useful in electronic applications requiring fast switching of the magnetization vector. While prior prediction of Co 3 PdN showed a gapped electronic band structure for each spin channel, we show that this was due to incomplete sampling of Brillouin zone paths and that band crossings exist along R-X|M and X|M-R paths. The metallic nature of Co 3 PdN is further confirmed by temperature-dependent transport measurements, which also show a considerable anomalous Hall effect. Altogether, this work represents an appreciable step toward understanding the synthesis, structure, stability, and properties of a new magnetic material.

14 SOLAR ENERGY↗
DOE OSTI2020

Nitride or Oxynitride? Elucidating the Composition–Activity Relationships in Molybdenum Nitride Electrocatalysts for the Oxygen Reduction Reaction

Molybdenum nitride (Mo–N) catalysts have shown promising activity and stability for the oxygen reduction reaction (ORR) in acid. However, the effect of oxygen (O) incorporation (from synthesis, catalysis, or exposure to air) on their activity remains elusive. Here, we use reactive sputtering to synthesize three compositions of thin-film catalysts and use extensive materials characterization to investigate the depth-dependent structure and incorporated O. We show that the as-deposited Mo–N films are highly oxidized both at the surface (>30% O) and in the bulk (3–21% O) and that the ORR performance is strongly correlated with the bulk structure and composition. Activity for 4e– ORR is highest for compositions with the highest N/O and N/Mo ratio. Furthermore, H 2 O 2 production for the films with moderate O content is comparable to or higher than the most H 2 O 2 -selective nonprecious metal catalysts in acidic electrolyte, on a moles per mass or surface area of catalyst basis. Density functional theory provides insight into the energetics of O incorporation and vacancy formation, and we hypothesize that activity trends with O/N ratios can be traced to the varying crystallite phases and their interactions with ORR adsorbates. This work demonstrates the prevalence and significance of O in metal nitride electrocatalysts and motivates further investigation into the role of O in other nonprecious metal materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Cathodic NH 4 + leaching of nitrogen impurities in CoMo thin-film electrodes in aqueous acidic solutions

Electrocatalytic reduction of dinitrogen (N 2 ) to ammonium (NH 4 + ) in acidic aqueous solutions was investigated at ambient temperature and pressure using a cobalt–molybdenum (CoMo) thin-film electrode prepared by magnetron reactive sputtering. Increased concentrations of ammonium ions (NH 4 + ) were consistently detected in the electrolyte using ion chromatography (IC) after constant-potential electrolysis at various potentials (≤-0.29 V vs. RHE). Using a newly developed analytical method based on ammonia derivatization, performing the experiments with 15 N 2 -labelled gas led however to the detection of increased 14 NH 4 + concentrations instead of 15 NH 4 + . X-ray photoelectron spectroscopic (XPS) analysis of the electrode surface revealed the presence of Mo[triple bond, length as m-dash]N and Mo–NH x species. Several contamination sources were identified that led to substantial increases in the concentration of ammonium ions, including 15 NH 3 impurities in 15 N 2 gas. The observed ammonium concentrations can be consistently ascribed to leaching of nitrogen ( 14 N) impurities incorporated in the CoMo film during the sputtering process. Therefore, researchers in the field are urged to adopt extended protocols to identify and eliminate sources of ammonia contamination and to very carefully monitor the ammonium concentrations in each experimental step.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Sensing performance of sub-100-nm vanadium oxide films for room temperature thermal detection applications

Vanadium oxide films are widely employed as thermal detectors in uncooled infrared detection systems due to their high temperature coefficient of resistance near room temperature. One strategy toward maximizing detectivity and reducing the thermal time constant in these systems is to minimize the system platform dimensions. This approach necessitates thinner film thicknesses ([Formula: see text]100 nm), for which there is little information regarding thermal sensing performance. Herein, we report on the sensitivity of reactively sputtered vanadium oxide thin film resistive thermometers nominally ranging from 100 to 25 nm and assess the influence of thermal annealing. Here we demonstrate that films in this minimum limit of thickness maintain a high temperature coefficient while additionally providing an enhancement in characteristics of the noise equivalent power.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Combinatorial Study of MZO Emitters for CdTe-Based Solar Cells

Precise band alignment at the front interface of CdTe-based solar cells is necessary to reduce photoexcited charge carrier recombination and to enable higher energy conversion efficiencies. Magnesium zinc oxide is not only transparent but also offers the ability to tune the conduction band offset with CdTe at the front of the device stack. In this work, we describe reactive sputtering of Mg 1-x Zn x O using metal targets and its application in CdTe photovoltaics. Combinatorial libraries of Mg 1-x Zn x O were created to tune the conduction band alignment for the optimal performance of CdTe solar cells. Band gap variation of more than 0.4 eV is achieved across a 3-inch substrate. Kelvin probe measurements demonstrate variance of work function across the substrate. Device performance is optimized at band gaps of 3.5 eV for the CdTe device processing conditions employed in this study.

14 SOLAR ENERGY↗
DOE OSTI2023

X-ray Multilayers for Next-Generation Astrophysics Missions

In this work, we proposed to demonstrate the feasibility of high-reflectivity multilayer coatings that will enable next-generation astrophysics missions in the x-ray region (2 – 7 nm wavelengths) where currently high-performance coatings largely do not exist. This paucity is due to multilayer interfacial effects that severely reduce the coating reflectance; our approach was based on understanding these interfacial effects and on tailored process modifications to control and minimize them. The experimental validation of our approach was made difficult by our multilayer deposition tool being down for a large portion of the project. The required repairs used significant amount of funding and time, which forced to reduce the scope of the project. Our experimental study focused on Cr/C multilayers and their optimization using N2 reactive sputtering. We showed that the highest reflectance was achieved when depositing the multilayers with 35% N2, and with a larger Cr thickness ratio than what was initially predicted by simulations. This result consists of a 13% relative increase in reflectivity compared to our previous work. It will benefit upcoming NASA proposals and LLNL’s leadership in this area, as well as topics highly relevant to LLNL/DOE’s priority areas, such as x-ray laser science and semiconductor manufacturing. This work will be further investigated as part of a Laboratory Directed Research and Development (LDRD) Exploratory Research (ER) project starting in Fiscal Year (FY) 2024.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Titanium Nitride as an Intermetallic Diffusion Barrier for Hydrogen Permeation in Palladium–Vanadium Composite Membranes

Hydrogen purification is a critical industrial process, and there are ongoing efforts to develop low-cost alternatives to palladium foil membranes. Titanium nitride (TiN) is studied as an interdiffusion barrier to enable hydrogen permeation in composite palladium–vanadium membranes. TiN was deposited via reactive sputtering, and films with the desired (200) orientation were obtained in the metallic regime at 400 °C under a 200 V bias to the substrate. The permeability of thin-film TiN was determined with palladium-based sandwich structures. TiN layers up to 10 nm resulted in a minimal decrease in flux (~20%) relative to a freestanding PdCu foil, which was attributed to the interfacial resistance. At greater thicknesses, the TiN layer was rate-limiting, and it was found that the effective permeability of the sputtered TiN thin films was ~6 × 10−12 mol s−1 m−1 Pa−0.5. Composite Pd|TiN|V|TiN|Pd membranes exhibited permeability values up to three times greater than pure palladium, exhibiting stability at 450 °C for over 100 h, with the lack of intermetallic diffusion and alloy formation being confirmed with XRD. The membranes were unstable at 500 °C, which was attributed to the instability of the thin Pd layer and loss of catalytic activity.

Biochemistry & Molecular Biology↗
NASA NTRS1971

Superconducting properties as a function of thickness in NbN films.

Measurement of the superconducting properties of NbN films prepared by a high purity reactive sputtering process. The transition temperature was found to decrease with decreasing film thickness, while in contrast the critical current vs magnetic field was largely independent of film thickness and even slightly increased when the film thickness went down to 100 A. The average resistivity of the NbN films was 1000 microohm-cm.

Gavaler, J. R.↗
NASA NTRS1979

Survey of ion plating sources

Based on the type of evaporation source, gaseous media and mode of transport, the following is discussed: resistance, electron beam, sputtering, reactive and ion beam evaporation. Ionization efficiencies and ion energies in the glow discharge determine the percentage of atoms which are ionized under typical ion plating conditions. The plating flux consists of a small number of energetic ions and a large number of energetic neutrals. The energy distribution ranges from thermal energies up to a maximum energy of the discharge. The various reaction mechanisms which contribute to the exceptionally strong adherence - formation of a graded sustrate/coating interface are not fully understood, however the controlling factors are evaluated. The influence of process variables on the nucleation and growth characteristics are illustrated in terms of morphological changes which affect the mechanical and tribological properties of the coating.

Spalvins, T.↗
NASA NTRS1979

Survey of ion plating sources

Ion plating is a plasma deposition technique where ions of the gas and the evaporant have a decisive role in the formation of a coating in terms of adherence, coherence, and morphological growth. The range of materials that can be ion plated is predominantly determined by the selection of the evaporation source. Based on the type of evaporation source, gaseous media and mode of transport, the following will be discussed: resistance, electron beam sputtering, reactive and ion beam evaporation. Ionization efficiencies and ion energies in the glow discharge determine the percentage of atoms which are ionized under typical ion plating conditions. The plating flux consists of a small number of energetic ions and a large number of energetic neutrals. The energy distribution ranges from thermal energies up to a maximum energy of the discharge. The various reaction mechanisms which contribute to the exceptionally strong adherence - formation of a graded substrate/coating interface are not fully understood, however the controlling factors are evaluated. The influence of process variables on the nucleation and growth characteristics are illustrated in terms of morphological changes which affect the mechanical and tribological properties of the coating.

Spalvins, T.↗
NASA NTRS1980

Investigation of titanium-nitride layers for solar-cell contacts

Reactively sputtered titanium-nitride layers have been incorporated as diffusion barriers in a titanium-silver metallization scheme on silicon. Backscattering analysis (2-MeV He/+/, RBS) indicates that the integrity of the system is basically preserved during annealing at 600 C for 10 min. Electrical properties were determined for titanium-nitride layers prepared under different deposition conditions. Resistivity and Hall mobility appear to depend on the oxygen contamination of the deposited material. For the lowest oxygen concentration (less than 5 at %) a resistivity of 170 microohms/cm has been found.

Von Seefeld, H.↗