Search NASA⌕ Search

SEARCH · Search NASA

Results for “ring oscillator”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Stability of laser oscillator systems

One of the goals of the Stanford University-NASA Laser-In-space Technology Experiment (SUNLITE) program is to develop ultrastable optical frequency oscillators that can lead to high resolution time standards and ultimately standard clocks. During the past year or two there was remarkable progress towards achieving in the laboratory the fundamental quantum limits for the frequency stability of nonplanar ring oscillator (NPRO) lasers. The quantum theoretical limits for laser oscillator stability are reviewed, measured stability levels compared, and some applications of such ultrastable laser oscillator systems suggested.

Hafele, Joseph C.↗
DOE OSTI2025

The low frequency edge oscillation in alcator C-Mod and ASDEX upgrade I-mode

The low frequency edge oscillation (LFEO) is a low frequency fluctuation in many plasma quantities in the pedestal region of the I-Mode confinement regime. It is observed on Alcator C-Mod between 10–30 kHz and on ASDEX Upgrade between 5–10 kHz. On both tokamaks it has been previously identified as a geodesic acoustic mode (GAM), however the recent discovery of the edge temperature ring oscillation (ETRO) in a similar frequency and spatial location as the LFEO in I-Modes on EAST has called this identification into question. In this paper we investigate the LFEO on C-Mod and AUG using a variety of different experimental techniques including spectral analysis, magnetic mode number analysis, localization, and direct measurement of the LFEO zonal structure and propagation using a mirror Langmuir probe. This investigation has reconfirmed the identification of the LFEO as a GAM and determined that it has several key differences from the ETRO.

AUG↗
NASA NTRS2011

Precision Laser Development for Gravitational Wave Space Mission

Optical fiber and semiconductor laser technologies have evolved dramatically over the last decade due to the increased demands from optical communications. We are developing a laser (master oscillator) and optical amplifier based on those technologies for interferometric space missions, such as the gravitational-wave mission LISA, and GRACE follow-on, by fully utilizing the mature wave-guided optics technologies. In space, where a simple and reliable system is preferred, the wave-guided components are advantageous over bulk, crystal-based, free-space laser, such as NPRO (Non-planar Ring Oscillator) and bulk-crystal amplifier, which are widely used for sensitive laser applications on the ground.

Numata, Kenji↗
NASA NTRS2011

Precision Laser Development for Interferometric Space Missions NGO, SGO, and GRACE Follow-On

Optical fiber and semiconductor laser technologies have evolved dramatically over the last decade due to the increased demands from optical communications. We are developing a laser (master oscillator) and optical amplifier based on those technologies for interferometric space missions, including the gravitational-wave missions NGO/SGO (formerly LISA) and the climate monitoring mission GRACE Follow-On, by fully utilizing the matured wave-guided optics technologies. In space, where simpler and more reliable system is preferred, the wave-guided components are advantageous over bulk, crystal-based, free-space laser, such as NPRO (Nonplanar Ring Oscillator) and bulk-crystal amplifier.

Numata, Kenji↗
DOE OSTI2023

An Analysis of FPGA LUT Bias and Entropy for Physical Unclonable Functions

Process variations within Field Programmable Gate Arrays (FPGAs) provide a rich source of entropy and are therefore well-suited for the implementation of Physical Unclonable Functions (PUFs). However, careful considerations must be given to the design of the PUF architecture as a means of avoiding undesirable localized bias effects that adversely impact randomness, an important statistical quality characteristic of a PUF. Here in this paper, we investigate a ring-oscillator (RO) PUF that leverages localized entropy from individual look-up table (LUT) primitives. A novel RO construction is presented that enables the individual paths through the LUT primitive to be measured and isolated at high precision, and an analysis is presented that demonstrates significant levels of localized design bias. The analysis demonstrates that delay-based PUFs that utilize LUTs as a source of entropy should avoid using FPGA primitives that are localized to specific regions of the FPGA, and instead, a more robust PUF architecture can be constructed by distributing path delay components over a wider region of the FPGA fabric. Compact RO PUF architectures that utilize multiple configurations within a small group of LUTs are particularly susceptible to these types of design-level bias effects. The analysis is carried out on data collected from a set of identically designed, hard macro instantiations of the RO implemented on 30 copies of a Zynq 7010 SoC.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

A sub-5 ps jitter time-to-digital converter ASIC with back-gate delay tuning in 22 nm CMOS

We present the design of a Time-to-Digital Converter (TDC) ASIC together with performance characterization results at cryogenic temperature (6-8 K), and at room temperature using emulated Low-Gain Avalanche Detector (LGAD) signals. The TDC design uses a two-step architecture with a ring-oscillator based counter and a Vernier delay line fine TDC. The TDC is implemented in an FD-SOI process, and back-gate tuning is used not only to correct threshold variation due to cryogenic operation, but also as a novel way to tune TDC delay elements with very little overhead. Using this technique, we demonstrate a design with very low power (0.5 mW) and area (0.003 mm 2 ). We present test results using the Fermilab Constant Fraction Discriminator (FCFD) ASIC to produce discriminated signals from an internal charge injection mechanism that mimics the waveform and signal amplitude of minimum ionizing particles impinging on LGAD sensors. We characterize the time precision of the full system and verify that the TDC ASIC contributes a negligible amount to the total system time precision, fully consistent with the expected jitter contribution of less than 5 ps. In conclusion, the results presented here demonstrate the utility of our TDC for applications in physics and quantum communications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Strain-insensitive intrinsically stretchable transistors and circuits

An all-elastomer strain engineering approach, which uses patterned elastomer layers with tunable stiffnesses, can be used to create intrinsically stretchable transistor arrays with a device density of 340 transistors cm -2 and strain insensitivity of less than 5% performance variation when stretched to 100% strain. Intrinsically stretchable electronics can form intimate interfaces with the human body, creating devices that could be used to monitor physiological signals without constraining movement. However, mechanical strain invariably leads to the degradation of the electronic properties of the devices. Here we show that strain-insensitive intrinsically stretchable transistor arrays can be created using an all-elastomer strain engineering approach, in which the patterned elastomer layers with tunable stiffnesses are incorporated into the transistor structure. By varying the cross-linking density of the elastomers, areas of increased local stiffness are introduced, reducing strain on the active regions of the devices. This approach can be readily incorporated into existing fabrication processes, and we use it to create arrays with a device density of 340 transistors cm -2 and a strain insensitivity of less than 5% performance variation when stretched to 100% strain. We also show that it can be used to fabricate strain-insensitive circuit elements, including NOR gates, ring oscillators and high-gain amplifiers for the stable monitoring of electrophysiological signals.

42 ENGINEERING↗
DOE OSTI2021

Impacts of Substrate Thinning on FPGA Performance and Reliability [Slides]

Substrate thinning is necessary in devices with flip-chip BGA packages to enable both radiation testing and component qualification and high-spatial resolution beam-based failure analysis methods. We investigated three factors affecting device performance: subsurface damage from the thinning process, reduced heat spreading in thin substrates, and changes in device switching speed. We conclude subsurface damage to crystalline Si caused by the thinning process is removable with sufficient SiO 2 slurry polishing. Local temperature differences increase minimally in devices thinned to 3 μm. Compressive stress in the Si increases globally after device thinning and leads to slowing of ring oscillator frequency by about 0.5% compared to full-thickness devices. Future work will include extending the results to submicron Si thickness values, which also has important benefits for failure analysis, debug, and security assessments. We also plan to extend this type of work to other FPGAs and other devices like memory and processors.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Radiation-Hardened GaN HEMT and Cell Design, Modeling, and Fabrication for Nuclear Instrumentation Applications

Recent advances in nuclear power generation technologies show great promise for efficient, safe generation of carbon-free power in the near future. Consequently, many new generation reactor designs are being pursued by government and industry groups, including both fission- and fusion-based technologies. Radiation- and temperature-tolerant sensor technology continues to advance, yet development of the electronics/instrumentation technologies suitable for these environments have fallen behind. Industry has adequately addressed harsh environment electronics needs for low earth orbit satellites, but the much more extreme conditions associated with electronics placed near or in a reactor core remain unaddressed. This project investigates the use of gallium nitride (GaN) circuit technology to address the unique needs for sensor interface electronics and communications in reactor environments. This report provides a summary of the first year’s project activities related to developing and optimizing devices and circuits for this GaN high electronic mobility transistor (HEMT) process. Activities reported include multiple analog and digital circuit designs simulated using custom Verilog-A models generated from measured GaN devices fabricated in the target process. Digital circuit designs included fundamental logic circuits such as an inverter, NAND, NOR, AND and OR gates, as well as a 5-stage ring oscillator. Each design was simulated using an open-source SPICE simulator, and an integrated circuit layout was produced of each design for use in future fabrication. Analog circuit designs focused on the fundamental building blocks to be used to construct sensor interface and communications circuits. These included current mirrors, matched differential pairs, and a Gilbert cell mixer design, each with an associated integrated circuit layout. Layout tools used for these designs included two open-source packages—KLayout and Magic—which were customized for specific use with the OSU GaN process layers. Design rules and preliminary device extraction capabilities were built for the Magic tool to enable device extraction and subsequent netlist generation for SPICE simulation. Finally, future research directions for year two are summarized. When the year-two directions are implemented, the project will be in position to advance the state of the art in electronics for near- or in-reactor sensor interfacing and communications.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2025

60 Co γ Irradiation of a CMS CROC v2 to 1.6 Grad

This paper reports the irradiation of the production version of the readout chip for the CMS HL-LHC pixel detector, CROC~v2, to 1.6~Grad using γ s from a 60 Co source at Sandia National Laboratory. The CROC~v2 was kept powered, configured, and maintained as close as possible to its nominal operating temperature of -20~ o C during irradiation. Internal chip voltages, pixel response, and diagnostic ring oscillators were continuously monitored, and thresholds were optimized frequently. The CROC~v2 performed according to specifications at 1.6~Grad. Where available, these results will be compared with those for this and earlier iterations of the RD53 readout chip irradiated to a few Grad with lower-energy X-ray sources.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2021

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC Power IC technology. The reported devices and circuits are fabricated on a N-/N+ 4H-SiC substrate at 150mm, production grade- Analog Devices Inc. (ADI) Hillview fabrication facility located in San Jose. Here, the static performance characteristics of HV NMOS and LV CMOS are reported. For future high temperature applications, the static performances are fully characterized and are reported up to 200oC. Finally, to validate the fabricated CMOS, a 5-stage ring oscillator is also demonstrated.

4H-SiC↗
NASA NTRS1990

Frequency noise measurement of diode-pumped Nd:YAG ring lasers

The combined frequency noise spectrum of two model 120-01A nonplanar ring oscillator lasers was measured by first heterodyne detecting the IF signal and then measuring the IF frequency noise using an RF frequency discriminator. The results indicated the presence of a 1/f-squared noise component in the power-spectral density of the frequency fluctuations between 1 Hz and 1 kHz. After incorporating this 1/f-squared into the analysis of the optical phase tracking loop, the measured phase error variance closely matches the theoretical predictions.

Chen, Chien-Chung↗
NASA NTRS1992

Optical Phase-Locked Loop For Optical Communication

Experimental apparatus includes two diode-pumped solid-state lasers of non-planar-ring-oscillator type, one represents the transmitting oscillator, other local oscillator in receiver. Output of transmitting oscillator is amplitude-modulated with pulse-position-modulated data stream. Phase-error variance of less than 0.05 mrad(Sup 2) achieved with relatively-narrow-band loop. Applications include free-space and fiber-optic communications, navigation, and scientific instrumentation in which receivers are required to track phases of transmitted signals.

Win, Moe Z.↗
NASA NTRS1989

Coherent communication link using diode-pumped lasers

Work toward developing a diffraction limited, single frequency, modulated transmitter suitable for coherent optical communication or direct detection communication is discussed. Diode pumped, monolithic Nd:YAG nonplanar ring oscillators were used as the carrier beam. An external modulation technique which can handle high optical powers, has moderate modulation voltage, and which can reach modulation rates of 1 GHz was invented. Semiconductor laser pumped solid-state lasers which have high output power (0.5 Watt) and which oscillate at a single frequency, in a diffraction limited beam, at the wavelength of 1.06 microns were built. A technique for phase modulating the laser output by 180 degrees with a 40-volt peak to peak driving voltage is demonstrated. This technique can be adapted for amplitude modulation of 100 percent with the same voltage. This technique makes use of a resonant bulk modulator, so it does not have the power handling limitations of guided wave modulators.

Kane, Thomas J.↗
NASA NTRS1991

The role of time and speed in NASA's SUNLITE program

The SUNLITE program of NASA's LaRC aims to demonstrate lower noise and better frequency stability for continuous-wave (CW) solid-state lasers in the microgravity environment of space. The program will utilize laser-diode-pumped nonplanar-ring oscillators regulated by ultra-stable high-finesse Fabry-Perot Spectrometers to produce light beams with phase rate or frequency variations as low as 3 Hz. SUNLITE will use the period-method (P-method) to measure the phase rate and frequency stability of the lasers. The P-method was chosen because it requires less memory space for the raw data, because frequencies can be analyzed on-line in real-time simply by reciprocating the periods (fi = 1/pi), and because the mean and variance of the frequencies can be calculated as fast or faster than they can be with the fastest fast Fourier transformations. Furthermore, for a given signal-to-noise power ratio, the P-method requires less data and less computer time to extract the noise components. Although the P-method does require fast Time Interval Counters, the Fourier transformation method requires comparably fast Sampling Volt meters. For either method, however, time and computer speed play a critical role.

Hafele, Joseph C.↗
NASA NTRS1992

Solid-state lasers for coherent communication and remote sensing

Semiconductor-diode laser-pumped solid-state lasers have properties that are superior to other lasers for the applications of coherent communication and remote sensing. These properties include efficiency, reliability, stability, and capability to be scaled to higher powers. We have demonstrated that an optical phase-locked loop can be used to lock the frequency of two diode-pumped 1.06 micron Nd:YAG lasers to levels required for coherent communication. Monolithic nonplanar ring oscillators constructed from solid pieces of the laser material provide better than 10 kHz frequency stability over 0.1 sec intervals. We have used active feedback stabilization of the cavity length of these lasers to demonstrate 0.3 Hz frequency stabilization relative to a reference cavity. We have performed experiments and analysis to show that optical parametric oscillators (OPO's) reproduce the frequency stability of the pump laser in outputs that can be tuned to arbitrary wavelengths. Another measurement performed in this program has demonstrated the sub-shot-noise character of correlations of the fluctuations in the twin output of OPO's. Measurements of nonlinear optical coefficients by phase-matched second harmonic generation are helping to resolve inconsistency in these important parameters.

Byer, Robert L.↗
NASA NTRS1996

An Acoustic Charge Transport Imager for High Definition Television Applications: Low-Voltage SAW Amplifiers on Multilayer GaAs/ZnO Substrates

This thesis addresses the acoustoelectric issues concerning the amplification of surface acoustic waves (SAWs) and the reflection of SAWs from slanted reflector gratings on GaAs, with application to a novel acoustic charge transport (ACT) device architecture. First a simple model of the SAWAMP was developed, which was subsequently used to define the epitaxially grown material structure necessary to provide simultaneously high resistance and high electron mobility. In addition, a segmented SAWAMP structure was explored with line widths on the order of an acoustic wavelength. This resulted in the demonstration of SAWAMPS with an order of magnitude less voltage and power requirements than previously reported devices. A two-dimensional model was developed to explain the performance of devices with charge confinement layers less then 0.5 mm, which was experimentally verified. This model was extended to predict a greatly increased gain from the addition of a ZnO overlay. These overlays were experimentally attempted, but no working devices were reported due to process incompatibilities. In addition to the SAWAMP research, the reflection of SAWs from slanted gratings on GaAs was also studied and experimentally determined reflection coefficients for both 45 deg grooves and Al stripes on GaAs have been reported for the first time. The SAWAMp and reflector gratings were combined to investigate the integrated ring oscillator for application to the proposed ACT device and design parameters for this device have been provided.

Hunt, W. D.↗