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All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.↗
NASA NTRS2004

Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development

This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.

Pugel, D. E.↗
NASA NTRS2003

Life-Prediction Parameters of Sapphire Determined for the Design of a Space Station Combustion Facility Window

To characterize the stress corrosion parameters and predict the life of a sapphire window being considered for use in the International Space Station's Fluids and Combustion Facility, researchers at the NASA Glenn Research Center conducted stress corrosion tests, fracture toughness tests, and reliability analyses, as shown in the figures. Standardized test methods, developed and updated by the author under the auspices of American Society for Testing and Materials, were employed. One interesting finding is that sapphire exhibits a susceptibility to stress corrosion in water similar to that of glass. In addition to generating the stress corrosion parameters and fracture toughness data, closed-form expressions for the variances of the crack growth parameters were derived. The expressions allow confidence bands to be easily placed on life predictions of ceramic components. Brittle materials such as sapphire and quartz are required for windows in a variety of applications such as the Fluids and Combustion Facility. To minimize the launch weight of such facilities, researchers must design the windows to be as lightweight as possible. The safe use of lightweight, brittle windows in structural applications is limited by two factors: low fracture toughness and slow crack growth, or stress corrosion. Stress corrosion of these and other optical materials can occur in relatively common environments, such as humid air. Access to the data has been requested by designers for use in the life prediction of a Northrop Grumman F16 instrument window and a Jet Propulsion Laboratory instrument window. One Space Act Agreement has been formed. Future work includes the measurement of the life of subscale windows.

Salem, Jonathan A.↗
NASA NTRS2009

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Choi, Sang↗
NASA NTRS2009

Failure Analysis of Sapphire Refractive Secondary Concentrators

Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.

Salem, Jonathan A.↗
NASA NTRS2018

Single Crystal Rhombohedral Epitaxy of Sige on Sapphire at 450.Degree. C.-500.Degree. C. Substrate Temperatures

Various embodiments may provide a low temperature (i.e., less than 850° C.) method of Silicon-Germanium (SiGe) on sapphire (Al2O3) (SiGe/sapphire) growth that may produce a single crystal film with less thermal loading effort to the substrate than conventional high temperature (i.e., temperatures above 850° C.) methods. The various embodiments may alleviate the thermal loading requirement of the substrate, which in conventional high temperature (i.e., temperatures above 850° C.) methods had surface temperatures within the range of 850° C.-900° C. The various embodiments may provide a new thermal loading requirement of the sapphire substrate for growing single crystal SiGe on the sapphire substrate in the range of about 450° C. to about 500° C.

Choi, Sang Hyouk↗
NASA NTRS2004

Progress on 10 Kelvin cryo-cooled sapphire oscillator

We present recent progress on the 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO). Included are incorporation of a new pulse tube cryocooler, cryocooler vibration comparisons between G-M and pulse-tube types, phase noise, and frequency stability tests. For the advantage of a single stage pulse tube cryocooler, we also present results for a 40K Compensated Sapphire Oscillator (40K CSO).

sapphire↗
NASA NTRS2006

Progress Report for a New Cryogenic Sapphire Oscillator

We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.

oscillator↗
NASA NTRSDate not supplied

A Brief History of the Curation of Genesis Sapphire Solar Wind Collectors

Commercial, high purity semiconductor sapphire (AKA corundum) wafers were used as one of the passive solar wind collector materials on the Genesis sample return mission because it exhibited lower diffusion rates for alkali elements than silicon and had sufficiently low alkali blanks. The 20 whole hexagons of sapphire flown on the Genesis spacecraft were distributed among the solar wind (SW) regimes as follows: 8 bulk solar wind (plus two half hexagons), 4 coronal mass ejection (CME), 4 coronal hole (CH), and 4 interstream (IS). Excellent overviews: a) collector material properties presented in [1] and b) solar wind environment experienced by collectors presented in [2].

Genesis sample return mission↗
NASA NTRS1974

Gate-controlled-diodes in silicon-on-sapphire: A computer simulation

The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.

Gassaway, J. D.↗
NASA NTRS1982

Molecular-orbital model for metal-sapphire interfacial strength

Self-consistent-field X-Alpha scattered-wave cluster molecular-orbital models have been constructed for transition and noble metals (Fe, Ni, Cu, and Ag) in contact with a sapphire (Al2O3) surface. It is found that a chemical bond is established between the metal d-orbital electrons and the nonbonding 2p-orbital electrons of the oxygen anions on the Al2O3 surface. An increasing number of occupied metal-sapphire antibonding molecular orbitals explains qualitatively the observed decrease of contact shear strength through the series Fe, Ni, Cu, and Ag.

Johnson, K. H.↗
NASA NTRS1985

Incident beam polarization for laser Doppler velocimetry employing a sapphire cylindrical window

For laser Doppler velocimetry studies employing sapphire windows as optical access ports, the birefringency of sapphire produces an extra beam intersection volume which serves to effectively smear the acquired velocity flow field data. It is shown that for a cylindrical window geometry, the extra beam intersection volume may be eliminated with minimal decrease in the fringe visibility of the remaining intersection volume by suitably orienting the polarizations of the initial laser beams. For horizontally incident beams, these polarizations were measured at three intersection locations within the cylinder. It was found that the measured polarization angles agreed with the theoretical predictions.

Lock, J. A.↗
NASA NTRS1985

Incident beam polarization for laser Doppler velocimetry employing a sapphire cylindrical window

For laser Doppler velocimetry studies employing sapphire windows as optical access ports, the birefringency of sapphire produces an extra beam intersection volume which serves to effectively smear the acquired velocity flow field data. It is shown that for a cylindrical window geometry, the extra beam intersection volume may be eliminated with minimal decrease in the fringe visibility of the remaining intersection volume by suitably orienting the polarizations of the initial laser beams. For horizontally incident beams, these polarizations were measured at three intersection locations within the cylinder. It was found that the measured polarization angles agreed with the theoretical predictions.

Lock, J. A.↗
NASA NTRS1988

Characteristics and kinetics of laser-pumped Ti:sapphire oscillators

The experimental performance of a gain-switched Ti:sapphire laser oscillator pumped by a frequency-doubled Q-switched Nd:YAG laser system is presented for a variety of operating conditions. A theoretical model developed for this oscillator predicts well its performance. The observed curved input-output energy plots for the oscillator result from the kinetics of gain switching and fluorescence decay during the gain buildup period. Fluorescence decay also produces observed oscillator thresholds higher than those normally predicted by the standard gain-equals-loss condition. Gain-switched parasitic modes, with a higher threshold but shorter round-trip time than the resonator mode, cause the resonator mode to oscillate only over a finite range of pump energies. Spectroscopic investigations show that the Ti:sapphire cross-section spectrum is well fit by a Poisson distribution, giving a peak cross section of 3 x 10 to the -19th sq cm for the pi polarization.

Eggleston, John M.↗
NASA NTRS1989

Epitaxial growth of InSb (111) on sapphire (0001)

Indium antimonide has been epitaxially grown directly on sapphire. Reflection high-energy electron diffraction, TEM, and SEM data are presented to show that the indium antimonide layer is epitaxial, has an abrupt interface with the sapphire, and grows in the 111-line direction. Mobility data show room-temperature mobilities as high as 10,000 sq cm/V s from some regions on the wafer.

Jamison, K. D.↗
NASA NTRS1990

Measurement and analysis of a microwave oscillator stabilized by a sapphire dielectric ring resonator for ultra-low noise

Phase-noise measurements are presented for a microwave oscillator whose frequency is stabilized by a whispering-gallery sapphire ring resonator with Q of 200,000. This mode involves little metallic conduction and allows nearly full use of the very low dielectric loss in sapphire. Several mode families have been identified, in good agreement with frequency calculations. For a 5-cm wheel resonator in a 7.6-cm container, Q values above 100,000 were found at room temperature for all of the modes in this sequence. Coupling Q-values for these same modes ranged from 10,000 (n = 5) to 100,000 (n = 10) for a WR112 waveguide port at the center of the cylinder wall of the containing can. Phase noise measurements for a transistor oscillator locked to the n = 10 (7.84-GHz) mode showed a 1/f cubed dependence for low offset frequencies, and a value of L(f) = -55 dB/Hz at an offset of 10 Hz from the carrier.

Dick, G. John↗
NASA NTRS1991

Broadly tunable high-power operation of an all-solid-state titanium-doped sapphire laser system

Broadly tunable and high-power operation of a Ti-doped sapphire laser is obtained with a diode-laser-pumped frequency-doubled Nd:YAG laser as the pump source. A maximum broadband (FWHM = 25 nm) output pulse energy of 720 microJ at 795 nm in a TEM00 mode is obtained for 1850 microJ of energy of 532-nm pump light. A minimum pulse duration of 7 nsec is obtained from a 40-mm-long cavity. With the use of an intracavity prism, the Ti:sapphire laser is tunable continuously over the 696-1000-nm spectral range (with three different mirror sets).

Steele, T. R.↗