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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Machining-inducted residual strain and ductile-brittle transition in sapphire revealed by X-ray nanoprobe diffraction microscopy

Hard X-ray nanoprobe diffraction microscopy is employed to investigate machining-induced residual lattice strain in single-crystal sapphire following ultra-precision orthogonal plunge cutting. In this study, tilt-series and single-angle acquisition strategies are systematically compared to evaluate their capability for resolving lattice variations associated with the machining process. An analytical framework is developed to enable the efficient and reliable extraction of strains, which serve as strain-based indicators of changes in the dominant deformation mechanism. The measured high-dimensional strain exhibits spatial heterogeneity and systematic evolution along the cutting path, consistent with deformation-regime changes from ductile response to crack-prone behavior.

Liang, Rui↗
DOE OSTI2023

Radiation-induced negative optical nonlinearities in fused silica, sapphire, and borosilicate glass

Here, negative nonlinear absorption is reported in neutron- and gamma-irradiated high-OH content fused silica, low-OH content fused silica, sapphire, borosilicate glass, and radiation-resistant borosilicate glass irradiated to total neutron fluences of 3.4 × 10 16 n ∙ cm –2 (42 Mrad γ), 1.7 × 10 17 n ∙ cm –2 (211 Mrad γ), and 3.6 × 10 17 n ∙ cm –2 (433 Mrad γ). Nonlinear absorption coefficients were measured via Z-scan and are on the order of – (10 –14 –10 –10 ) m∙W –1 . The Z-scan also reveals a negative nonlinear index of refraction in neutron- and gamma-irradiated radiation-resistant borosilicate glass on the order of –10 –19 m 2 ∙ W –1 . Thermal annealing at temperatures up to 800 °C is shown to restore these nonlinearities to their positive unirradiated values in all four materials. All Z-scan measurements were performed at 532 nm with a nanosecond pulsed laser. The occurrence of negative nonlinearities may be attributed to the presence of metallic impurities and the resulting saturable absorption. A limited effect of photobleaching is observed in measurements and is quantified in multiple Z-scans.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Exploring the interfacial structure and crystallinity for direct growth of Mn 3 Sn(0001) on sapphire (0001) by molecular beam epitaxy

The Kagome antiferromagnet Mn 3 Sn has garnered a lot of attention due to the presence of interesting properties such as anomalous Hall effects and Nernst effects. Until now, few papers have been reported to grow using molecular beam epitaxy with a buffer layer or on other substrates. In this paper, we discuss the synthesis of crystalline Mn 3 Sn layers, prepared on Al 2 O 3 (0001) without a buffer layer using molecular beam epitaxy. The growth is monitored in-situ using reflection high energy electron diffraction and measured ex-situ using X-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. The samples were deposited at 524 ± 5 °C, with an Mn: Sn atomic flux ratio of 3.2:1 for 90 minutes. Orientation relationships between the Mn 3 Sn films and the sapphire substrates are determined from in-plane and out-of-plane measurements. Our analysis indicates that the resulting film is predominantly c−plane oriented. Lastly, the samples prepared in this way were found to be discontiguous, showing a 3-dimensional morphology. According to first-principles calculations, the Mn 3 Sn exhibits a displaced Kagome structure in the very first stages of growth, for 2ML and 4ML growth on Al 2 O 3 (0001). This result is corroborated by calculating the surface formation energies and explains the observed RHEED patterns.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Chemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS 2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors

How do chemical and structural modifications to the supporting crystal surface affect the subsequent van der Waals (vdW) or quasi(Q)-vdW epitaxial growth of 2D nanocrystals? Developing an atomic-scale picture of such an interfacial system is crucial for understanding its impact on the physical and chemical properties of the supported 2D materials. The elucidation of the interfacial structure and chemistry needed to promote the Q-vdW epitaxial growth of 2D tungsten disulfide (WS 2 ) nanocrystals contributes to the growth mechanism understanding, thus pushing forward the integration of such atomically thin semiconductors toward real field-effect transistor applications. In addition to an atomic-force microscopy top view, we showcase a combination of X-ray techniques for a top-to-bottom investigation of the complexities of the buried interface structures. Furthermore, this approach uses X-ray photoelectron spectroscopy, X-ray standing wave excited X-ray fluorescence, and crystal truncation rod scattering to produce a highly resolved chemical-state-specific 3D atomic map for the extended interface structure of WS 2 /α-Al 2 O 3 (001). Employing these detailed analysis methods, along with density functional theory to further refine the picoscale structure, we demonstrate how two different types of interface engineering during the pregrowth stage lead to significant differences in the chemical and structural modifications to the terminal surface of c-face sapphire, which in turn leads to substantial differences in the submonolayer growth of supported WS 2 2D nanocrystals in terms of lateral domain sizes, epitaxial registry, vdW gaps, and stability.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Atomic Magnetometry Using a Metasurface Polarizing Beamsplitter in Silicon-on-Sapphire

Here, we demonstrate atomic magnetometry using a metasurface polarizing beamsplitter fabricated on a silicon-on-sapphire (SOS) platform. The metasurface splits a beam that is near-resonant with the rubidium atoms (795 nm) into orthogonal linear polarizations, enabling the measurement of magnetically sensitive circular birefringence in rubidium vapor through balanced polarimetry. We incorporated the metasurface into an atomic magnetometer based on nonlinear magneto-optical rotation and measured subnanotesla sensitivity, which is limited by low-frequency technical noise and transmission loss through the metasurface. To our knowledge, this work represents the first demonstration of SOS nanophotonics for atom-based sensing and paves the way for highly integrated, miniaturized atomic sensors with enhanced sensitivity and portability.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2026

Silicon-On-Sapphire Metasurfaces Generate Arrays of Dark and Bright Traps for Neutral Atoms

We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon make it possible to design high-resolution near-infrared (λ > 700 nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.

Gerchberg-Saxton↗
DOE OSTI2020

Thermal transport across nanoscale damage profile in sapphire irradiated by swift heavy ions

In this work, we studied the degradation of thermal conductivity in single crystal sapphire (α-Al 2 O 3 ) irradiated by 167 MeV Xe swift heavy ions (SHIs) over the multiple fluences in the range of 10 12 –10 14 ions/cm 2 . Thermal conductivity was measured primarily in the cross-plane direction using a noncontact ultrafast optical pump-probe technique called picosecond time domain thermoreflectance (TDTR). Multiple samples with variable ion fluences allowed us to probe distinct regions resulting from different regimes of microstructure evolution caused by electronic energy loss. By tuning the penetration depth of the thermal waves using different modulation frequencies, two regions with distinct conductivities were identified and the values of which were found to be consistent with phonon-mediated thermal transport models while the microstructure was confirmed by electron microscopy characterization. These damaged regions were determined to be a several micrometer thick ion track region and several tens of nanometer-thick amorphous layer present only above 5.0 × 10 13 ions/cm 2 . These results demonstrate the applicability of TDTR to resolve thermal transport behavior in SHI irradiated oxides having nonhomogeneous damage profile on a nanometer scale. The presented approach facilitates future studies aiming at resolving the impact of distinct damage resulting from electronic and nuclear stopping regimes under irradiation.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2020

Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films

The growth of high-quality epitaxial gallium nitride (GaN) thin films is achieved by using a baking and plasma pretreatment of the substrate prior to the GaN plasma-enhanced atomic layer deposition (PE-ALD). In this work, it is found that such pretreatment makes the GaN films grow coherently on sapphire substrates, following a layer-by-layer growth mechanism. The deposited GaN film shows high crystalline quality, a sharp GaN/sapphire interface, and a flat surface. The possibility of growing high-quality GaN epilayers in this way broadens the range of applications for PE-ALD in GaN-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗
DOE OSTI2020

Twinned nanostructure of VO 2 thin films grown on r-cut sapphire

Due to strong electron-phonon interactions, strain engineering is a powerful tool to control quantum critical phenomena in strongly correlated oxides. Exploring this possibility requires understanding the nanoscale structure of quantum materials and the role it plays in forming the strain landscape. In this work, we used a combination of x-ray nanoimaging and reciprocal space mapping to study the nanostructure of the archetypal Mott insulator VO 2 featuring an insulator-to-metal and structural phase transitions. We found that VO 2 thin films grown on r-cut sapphire consist of two intertwined crystal lattices, permanently inclined with respect to each other. This persistent pattern of twin domains stands out from the symmetry breaking induced by the structural phase transition and conceivably originates from the post-growth strain relaxation process. We propose a model explaining the formation of twin domains and the emergence of anisotropy in the film nanostructure. Our work suggests using miscut substrates to suppress either one or the other twin that can serve as a new tool to control strain in VO 2 films.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Hugoniot, sound speed, and phase transitions of single-crystal sapphire for pressures 0.2–2.1 TPa

Sapphire (Al 2 O 3 ) is a major constituent of the Earth's mantle and has significant contributions to the field of high-pressure physics. Constraining its Hugoniot over a wide pressure range and identifying the location of shock-driven phase transitions allows for development of a multiphase equation of state and enables its use as an impedance-matching standard in shock physics experiments. In this paper we present measurements of the principal Hugoniot and sound velocity from direct impact experiments using magnetically launched flyers on the Z machine at Sandia National Laboratories. The Hugoniot was constrained for pressures from 0.2–2.1 TPa and a four-segment piecewise linear shock-velocity–particle-velocity fit was determined. First-principles molecular dynamics simulations were conducted and agree well with the experimental Hugoniot. Sound-speed measurements identified the onset of melt between 450 and 530 GPa, and the Hugoniot fit refined the onset to 525 ± 13 GPa. A phase diagram which incorporates literature diamond-anvil cell data and melting measurements is presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Impact of absorption due to zero-field splitting on loss in dielectrics: A case study in sapphire

The coherence times of superconducting qubits are limited by loss mechanisms, whose microscopic origins have remained elusive. We propose a mechanism caused by transitions between zero-field-split states of paramagnetic impurities or defects. We derive the absorption cross section for a magnetic dipole transition and apply it to calculate the bulk loss tangent. For Cr, Fe, and V impurities in sapphire, we find loss tangents at 4.5 GHz in the range of 10 −9 –10 −8 , comparable to the loss measured in experiments. This value suggests that magnetic loss may be a limiting factor in the coherence times of superconducting qubits.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Molecular beam epitaxy and crystal structure of majority a -plane-oriented and substrate-strained Mn 3 Sn thin films grown directly on sapphire (0001)

The Kagome antiferromagnet Mn 3 Sn has garnered much attention due to the presence of exciting properties such as anomalous Hall and Nernst effects. This paper discusses the synthesis of crystalline Mn 3 Sn thin films, prepared on Al 2 O 3 (0001) substrates at 453 ± 5°C using molecular beam epitaxy. The growth is monitored in situ using reflection high energy electron diffraction and measured ex situ using x-ray diffraction, Rutherford back-scattering, and cross-sectional scanning transmission electron microscopy. Our analysis shows the in-plane lattice constants of a 1,M = 4.117 ± 0.027 Å and a 2,M = 4.943 ± 0.033 Å, which is a very unexpected result when compared to the bulk a-plane Mn 3 Sn. This indicates a strain in the film and makes it challenging to provide a straightforward explanation. In an effort to explain our results, we discuss two possible orientation relationships between the Mn 3 Sn films and the sapphire substrates. Samples prepared under these conditions appear to have smooth surfaces locally, but overall the film has a 3D island morphology. First-principles calculations provide atomic models of the Mn 3 Sn (112¯0) lattice on Al 2 O 3 (0001) high symmetry sites, indicating that the L3-R90° is the most stable configuration. A detailed discussion of the experimental data and theoretical results, as well as strain effects, is provided.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Intermodal microwave-to-optical transduction using silicon-on-sapphire optomechanical ring resonator

Optomechanical and electro-optomechanical systems have emerged as one of the most promising approaches for quantum microwave-to-optical transduction to interconnect distributed quantum modalities for scaling the quantum systems. These systems use suspended structures to increase mode overlap and mitigate loss to achieve high efficiency. However, the suspended design’s poor heat dissipation under strong drive limits the ultimate efficiency. Here, we demonstrate an unsuspended optomechanical ring resonator (OMR) based on the silicon-on-sapphire (SOS) platform for microwave-to-optical frequency conversion. The OMR achieves a triply resonant optical-to-optical conversion with an enhanced coupling rateG b = 3.6 gigahertz per square-root milliwatt at a peak conversion efficiency of 1.2% with 3.6-milliwatt microwave drive power and a microwave-to-optical conversion efficiency of 1.5 × 10 −5 at 10-milliwatt optical drive power. Our results show that the unsuspended SOS platform, which mitigates the thermal effect and is compatible with superconducting qubits, is a promising platform for optomechanical circuitry and quantum transduction.

Science & Technology - Other Topics↗
DOE OSTI2023

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗
DOE OSTI2022

Efficient generation of the 7th harmonic of Ti:sapphire (114.6 nm) vacuum ultraviolet pulses with 60 fs duration by non-collinear four-wave mixing in argon

The recent advances in femtosecond vacuum UV (VUV) pulse generation, pioneered by the work of Noack et al., has enabled new experiments in ultrafast time-resolved spectroscopy. Expanding on this work, we report the generation of 60 fs VUV pulses at the 7th harmonic of Ti:sapphire with more than 50 nJ of pulse energy at a repetition rate of 1 kHz. Additionally, the 114.6 nm pulses are produced using non-collinear four-wave difference-frequency mixing in argon. The non-collinear geometry increases the phase-matching pressure, and results in a conversion efficiency of ~10-3 from the 200 nm pump beam. The VUV pulses are pre-chirp-compensated for material dispersion with xenon, which has negative dispersion in this wavelength range, thus allowing almost transform-limited pulses to be delivered to the experimental chamber.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Boosting SNR of cascaded FBGs in a sapphire fiber through a rapid heat treatment

This Letter reports the performance of femtosecond (fs) laser-written distributed fiber Bragg gratings (FBGs) under high-temperature conditions up to 1600°C and explores the impact of rapid heat treatment on signal-to-noise ratio (SNR) enhancement. FBGs are essential for reliable optical sensing in extreme temperature environments. Comprehensive tests demonstrate the remarkable performance and resilience of FBGs at temperatures up to 1600°C, confirming their suitability for deployment in such conditions. Here, the study also reveals significant fringe visibility improvements of up to ∼10 dB on a 1-m-long sapphire optical fiber through rapid heat treatment, representing a first-time achievement to the best of our knowledge. These enhancements are vital for improving the SNR and overall performance of optical fiber systems in extreme temperatures. Furthermore, the research attains long-term stability for the cascaded FBGs over a 24-hr period at 1600°C. This research expands our understanding of the FBG behavior in high-temperature environments and opens avenues for developing robust optical fiber systems for energy, aerospace, oil and gas, and high-temperature distributed sensing applications.

47 OTHER INSTRUMENTATION↗
DOE OSTI2022

Early Performance Results on 4th Gen Intel(R) Xeon (R) Scalable Processors with DDR and Intel(R) Xeon(R) processors, codenamed Sapphire Rapids with HBM

The Crossroads supercomputer was designed to simulate some of the most complex physical devices in the world. These simulations routinely require 1/2 petabyte or more of system memory running on thousands of compute nodes for months at a time on the most powerful supercomputers. Improvements in time to solutions for these workloads can have major impact on our mission capabilities. In this paper we present early results of representative application workloads on 4th Gen Intel Xeon and Intel Xeon Processors codenamed Sapphire Rapids with HBM. These results demonstrate an extremely promising 8.57x improvement (node to node) over our prior generation Intel Broadwell (BDW) based HPC systems. No code modifications were required to achieve this speedup, providing a compelling path forward toward major reductions in time to solution and the complexity of physical systems that can be simulated in the future.

97 MATHEMATICS AND COMPUTING↗