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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Response of CR-39 nuclear track detectors to protons with non-normal incidence

This paper presents data from experiments with protons at non-normal incidence to CR-39 nuclear track detectors, analyzing the properties of detection efficiency, proton track diameter, track contrast, and track eccentricity. Understanding the CR-39 response to protons incident at an angle is important for designing charged particle detectors for inertial confinement fusion (ICF) applications. This study considers protons with incident energies less than 3 MeV. In this regime, an incident angle of 10° has no effect on CR-39 detection efficiency, and >85% detection efficiency is preserved up through 25° in the range of 1.0 MeV–2.1 MeV. For ICF applications, incident angles above 30° are deemed impractical for detector design due to significant drops in proton detection at all energies. We observe significant reductions in detection efficiency compared to theoretical predictions, particularly at low energies where proton tracks are etched away. The proton track diameter measured by the scan system is observed to decrease with higher incident angles. The track diameters are analyzed with two fitting models, and it is shown that the diameter–energy relation can be fit with the existing models at angles up to 30° . The optical contrast of the tracks tends to increase with the angle, meaning that the tracks are fainter, and a larger increase is observed for higher energies. Eccentricity, a measure of how elongated proton tracks are, increases with the incident angle and drops after the critical angle. The lowest energy tracks remain nearly circular even at higher angles.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

In-Situ Characterization Tools for Evaluating Radiation Tolerance and Elemental Migration in Perovskites

This paper discusses the in-situ characterization tools designed to assess radiation tolerance and elemental migration in perovskite materials. With the increasing use of perovskites in various technological applications, understanding their response to radiation exposure is paramount. Ion Beam Induced Charge (IBIC) emerges as a powerful tool for investigating the radiation tolerance of perovskites at the microscale. By employing focused ion beams, IBIC allows for the spatial mapping of charge carriers, offering insights into the material's electronic response to radiation-induced defects. This technique enables researchers to pinpoint areas of enhanced or suppressed charge collection, providing valuable information on the perovskite's intrinsic properties under irradiation. Rutherford Backscattering Spectrometry (RBS) complements the study by offering a quantitative analysis of elemental migration in perovskite materials. Through the precise measurement of backscattered ions, RBS provides a detailed understanding of the elemental composition and distribution within the perovskite lattice after radiation exposure. The integration of IBIC and RBS techniques in in-situ experiments enhances the comprehensive characterization of radiation effects on perovskites.

ion beams↗
DOE OSTI2025

A high-temperature Rutherford Backscattering Spectrometry apparatus for in situ material characterization

A new methodology for high-temperature Rutherford Backscattering Spectrometry (HT-RBS) has been developed to enable in situ material characterization at elevated temperatures. A 3.5 MeV proton beam penetrates a 10-µm-thick 316L stainless steel foil mounted on a graphite substrate, with backscattered signals detected using an HT-RBS system. Conventional semiconductor detectors, primarily based on silicon, suffer significant performance degradation at temperatures higher than ~ 60 °C due to increased leakage current and noise, leading to signal distortion and failure. Here, to preserve spectral quality, a 5 µm aluminum foil shields the detector from thermal radiation, allowing reliable operation up to 900 °C at the target. A rotatable shutter provides additional thermal isolation during data collection pauses. In situ measurements of areal density changes of 316L stainless steel were conducted to validate the technique, revealing consistency with the known thermal expansion coefficient. The method facilitates seamless switching between irradiation and analysis, enabling continuous studies. This approach supports in situ investigations of diffusion, void swelling, creep, and corrosion, offering a versatile tool for advanced materials research.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Even lighter particle dark matter

We report on recent progress in the search for dark matter particles with masses from 1 Mev c ^{-2} − 2 to 1 Gev c ^{-2} − 2 . Several dark matter candidates in this mass range are expected to generate measurable electronic-recoil signals in direct-detection experiments. We focus on dark matter particles scattering with electrons in semiconductor detectors since they have fundamentally the highest sensitivity due to their low ionization threshold. Charge-coupled device (CCD) silicon detectors are the leading technology, with significant progress expected in the coming years. We present the status of the CCD program and briefly report on other efforts.

Chavarria, Alvaro E.↗
DOE OSTI2023

Hybrid Detector (Final Technical Report)

We report updates since the first demonstration of a phonon-mediated silicon detector technology that provides a primary phonon measurement in a low-voltage region, and a simultaneous indirect measurement of the ionization signal through Neganov–Trofimov–Luke amplification in a high voltage region, both in a monolithic crystal. We present characterization of charge and phonon transport between the two stages of the detector and the resulting background discrimination capability at low energies. This new detector technology has the potential to significantly enhance the sensitivity of dark matter and coherent neutrino scattering experiments beyond the capabilities of current technologies that have limited discrimination at low energies.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2024

High-purity germanium semiconductor modeling in the detector response function toolkit

In this study, we have extended the detector response function toolkit (DRiFT) to provide modeling capabilities of semiconductor sensors. DRiFT provides realistic nuclear instrumentation response by post-processing Monte-Carlo N-particle (MCNP®) radiation transport outputs. MCNP® is capable of modeling radiation transport in complex environments, but has limited detector physics and readout electronics modeling capabilities. Semiconductor detector response can be calculated with a high-fidelity for a flexible range of environments by utilizing MCNP® to simulate radiation interactions inside of detector volumes, and then using DRiFT to model charge transport and signal formation in the semiconductor, as well as the readout electronics. DRiFT models charge transport in the semiconductor, the preamplifier, shaping amplifier, pulse pile-up, and electronic noise to generate detector response. The semiconductor application in DRiFT can model a range of semiconductor materials, shapes, and sizes; and is demonstrated here for a large volume coaxial high-purity germanium (HPGe) detector. Here, we compare detector response functions of a coaxial HPGe detector with measurement of 60 Co, 133 Ba, and 137 Cs at varying count rates, and we conduct a parameter study to demonstrate the effect of changing parameters in the DRiFT simulation. The HPGe detector response function shows excellent agreement with measurements of difference sources with varying dead times and count rates.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2022

Charge carrier motion and effect of fixed oxide charge in a microstructured silicon radiation detector

Signal formation in a microstructured semiconductor neutron detector is more complex than in planar diode geometry. Three-dimensional microstructures are laterally smaller than the ionization cloud length, and the electric fields may be weak enough to exhibit plasma time effects. This work is the first detailed treatment of charge carrier motion in these complex semiconductor devices to replicate the time profile and signal magnitude. Simulations were performed using COMSOL Multiphysics to investigate various parameters that affect the propagation of the charge cloud. It was observed that the size of the simulated three-dimensional structure had an impact on the induced current pulse, indicating the importance of simulation geometry optimization to accurately simulate charge cloud expansion. COMSOL Multiphysics was used to replicate accurate charge creation profiles using energy deposition information imported from radiation transport codes. A detailed simulation methodology is presented to benchmark preamplifier event pulses along with complexities in modeling the charge carrier motion along the etched microstructured trenches with Si–SiO 2 boundary conditions, including fixed oxide charge and interface trapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Thallium Bromide Semiconductor Radiation Materials and Detectors Characterization Studies

Two overarching requirements of crucial importance for the commercial and scientific establishment of semiconductor radiation detectors are: (1) exceptionally high-purity crystals with impurity concentrations less than 1 part-per-billion and (2) single crystals that are relatively free from subgrain boundaries, secondary phases, dislocations, and other electrically-active defects. We investigated the properties of thallium bromide (TlBr) material that affect its performance with the goal of increasing the material's commercial viability for radiation detection applications. For this purpose, we used beamlines at the National Synchrotron Light Source (NSLS) at Brookhaven National Laboratory (BNL), performing Micron-scale X-ray Detector Mapping, White Beam X-ray Diffraction Topography, and Micron-scale X-ray Fluorescence. These characterization methods improve the industry's understanding of TlBr and lead to the production of improved instrumentation. In this particular study we report electro-migration measurements of positive-ion Cu, Ag, and Au impurities in TlBr detectors under electric field strengths typically used for device operation. BNL improved TlBr detectors with an electrode design that corrects the response non-uniformities caused by crystal defects. This design can achieve improved energy resolution while using typical-grade, commercial crystals with relaxed quality requirements, thus reducing the overall cost of detectors. Additional characterization will be necessary to fully understand the structure and performance of TlBr with the ultimate goal to achieve the highest energy resolution. Our findings from past work will be presented along with our recommendations for additional investigation.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Study of charge trapping in CZT detectors

A semiconductor detection material, Cadmium Zinc Telluride, was investigated for potential use as a particle detector for space flight applications. Our set of detectors was determined to be flawed for particle detection methods, likely due to charge transport mechanisms within the detector material, or due to reduced voltage required to avoid dielectric breakdown. It was observed that the method of crystal growth may play a role in the performance, but performance may also vary between manufacturers using the same growth method. It is recommended to perform further study at a larger proton beam facility.

47 OTHER INSTRUMENTATION↗
DOE OSTI2024

Device response principles and the impact on energy resolution of epitaxial quantum dot scintillators with monolithic photodetector integration

Abstract Epitaxial quantum dot (QD) scintillator crystals with picosecond-scale timing and high light yield have been created for medical imaging, high energy physics and national security applications. Monolithic photodetector (PD) integration enables the sensing of photons generated within the waveguiding crystal and allows a wide range of scintillator-photodetector coupling geometries. Until recently, these doubly novel devices have suffered from complex, high variance responses to monoenergetic sources which significantly reduces their precision and accuracy. The principles governing the overall device response have now been discerned and embodied by an expression derived within a geometrical optics framework which considers optical properties, surface roughness and photodetector coupling geometry. Response variation due to these factors was sufficiently reduced to obtain material-related energy resolution values of 2.4% with alpha particles. These findings place energy resolution alongside luminescence timescale, photon yield, and radiation hardness as outstanding properties of these engineered materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Design and Performance of an InAs Quantum Dot Scintillator with Integrated Photodetector

A new scintillation material composed of InAs quantum dots (QDs) hosted within a GaAs matrix was developed, and its performance with different types of radiation is evaluated. A methodology for designing an integrated photodetector (PD) with a low defect density and that is optically matched to the QD’s emission spectrum is introduced, utilizing an engineered epitaxial InAlGaAs metamorphic buffer layer. The photoluminescence (PL) collection efficiency of the integrated PD is examined using two-dimensional scanning laser excitation. The detector response to 5.5 MeV α-particles and 122 keV photons is presented. Yields of 13 electrons/keV for α-particles and 30–60 electrons/keV for photons were observed. The energy resolution of 12% observed with α-particles was mainly limited by noise- and geometry-related optical losses. The radiation hardness of an InAs QDs hosted within GaAs and a wider band gap AlGaAs ternary alloy was studied under a 1 MeV proton implantation up to a 10 14 cm –2 dose. The integrated PL responses were compared to evaluate PL quenching due to non-radiative defects. The QDs embedded in the AlGaAs demonstrated improved radiation hardness compared to QDs in the GaAs matrix and in the InGaAs quantum wells.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Progress toward absolute calibrations of DC x-ray sources from 1 keV to >30 keV for Z diagnostics applications

Numerous x-ray diagnostics at the Z facility, time-resolved and time-integrated, would benefit from a local calibrated x-ray source. For many years, Z has used low-power Manson x-ray sources to provide some characterization information for components of Z diagnostics below 30 keV. More recently, we have acquired TruFocus x-ray sources, which operate at voltages up to 100 kV depending on the anode material and model. These DC sources have demonstrated good stability and repeatability. Absolute calibrations of either sources or detectors usually involve another calibrated detector from another source, which has not been readily available locally. Therefore, we have adopted the strategy of characterizing a sensitive semiconductor diode detector by controlling or inferring the active volume. This characterized detector is then used to scale the Manson x-ray spectral shape as measured by an Amptek energy-resolving detector. Here, the result agrees well with the modeled source spectrum. We can apply this technique to the TruFocus as well.

Crystal spectroscopy↗
DOE OSTI2023

Extreme γ –Ray Radiation Tolerance of Spectrometer–Grade CsPbBr 3 Perovskite Detectors

The perovskite compound CsPbBr 3 has recently been discovered as a promising room-temperature semiconductor radiation detector, offering an inexpensive and easy-to-manufacture alternative to the current benchmark material Cd 1–x Zn x Te (CZT). The performance of CsPbBr 3 sensors is evaluated under harsh conditions, such as high radiation doses often found in industrial settings and extreme radiation in space. Results show minimal degradation in detector performance after exposure to 1 Mrad of Co-60 gamma radiation, with no significant change to energy resolution or hole mobility and lifetime. Additionally, many of the devices are still functional after being exposed to a 10 Mrad dose over 3 days, and those that do not survive can still be refabricated into working detectors. Notably, these results suggest that the failure mode in these devices is likely related to the interface between the electrode and material and their reaction, or the electrode itself and not the material itself. Overall, the study suggests that CsPbBr 3 has high potential as a reliable and efficient radiation detector in various applications, including those involving extreme fluxes and energies of gamma-ray radiation.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Calibration of a broadband x-ray crystal spectrometer using a continuum x-ray source and photon-counting detectors

We report measurements of sensitivity of a broadband (≃20–30 keV) x-ray crystal spectrometer using a bremsstrahlung continuum x-ray source and several detectors, including an energy-discriminating photon-counting point detector (Si drift diode, Amptek Inc.), imaging hybrid photon-counting detectors (Eiger2-Si and Eiger2-CdTe, DECTRIS Ltd.), and image plates (SR type). Sensitivity is defined as a ratio of the crystal-reflected energy-position-dispersed spectrum measured by a given detector to the incident non-dispersed spectrum measured using the energy-discriminating point detector. The sensitivity derived from data measured exclusively by the point detector is considered detector-independent and serves as a reference. The sensitivities derived from data collected with the hybrid photon-counting detectors were matched to the reference using a scale factor of 1.05. The image plate-derived sensitivities required a scale factor of 1.16 to match the reference. Furthermore, the resulting mismatch in the shapes of all measured scaled sensitivities in the range of the spectrometer was ≲±10%, while the mismatch between the shapes of the sensitivities corresponding to the Si-based detectors was ≲±2.5%.

Crystal optics↗
DOE OSTI2022

Boron Nitride Solid-State Neutron Detectors

The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Phase I Final Report

Explore the source record for details and available documents.

98 NUCLEAR DISARMAMENT, SAFEGUARDS, AND PHYSICAL P↗
DOE OSTI2021

Beamline Spectroscopy of Integrated Circuits With Hard X-Ray Transition Edge Sensors at the Advanced Photon Source

At Argonne National Laboratory, we are developing hard X-ray (2 to 20 keV) Transition Edge Sensor (TES) arrays for beamline science. The significantly improved energy resolution provided by superconducting detectors compared to semiconductor-based energy-dispersive detectors, but with better collection efficiency than wavelength-dispersive instruments, will enable greatly improved X-ray emission and absorption spectroscopic measurements. Additionally, a prototype instrument with 24 microwave-frequency multiplexed pixels is now in testing at the Advanced Photon Source (APS) 1-BM beamline. Initial measurements show an energy resolution ten times better (150 eV compared to < 15 eV) than the silicon-drift detectors currently available to APS beamline users, and in particular demonstrate the ability to resolve closely-spaced emission lines in samples containing multiple transition metal elements, such as integrated circuits. Comparing fluorescence spectra of integrated circuits measured with our TESs at the beamline to those measured with silicon detectors, we find emission lines and elements largely hidden (e.g. Hf alongside Cu) from a semiconductor-based detector but well resolved by a TES. This directly shows the strengths of TES-based instruments in fluorescence mapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗