Search NASASearch

SEARCH · Search NASA

Results for “stacking faults”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3

EBIC and HVTEM studies of RTR silicon ribbon

The defect structure of RTR ribbon #6-731, run 803 was studied. Prior to laser recrystallization the defect structure consists of closely spaced twin and grain boundaries. Precipitation of impurities occurs after laser recrystallization. The observation of electrically active defects in EBIC was correlated with HVTEM studies. Pairs of electrically active defects in twin boundaries are due to stacking faults connecting the twin boundaries.

Cunningham, B.

The role of cobalt on the creep of Waspaloy

Cobalt was systematically replaced with nickel in Waspaloy (which normally contains 13% Co) to determine the effects of cobalt on the creep behavior of this alloy. Effects of cobalt were found to be minimal on tensile strengths and microstructure. The creep resistance and the stress rupture resistance determined in the range from 704 to 760 C (1300 to 1400 C) were found to decrease as cobalt was removed from the standard alloy at all stresses and temperatures. Roughly a ten-fold drop in rupture life and a corresponding increase in minimum creep rate were found under all test conditions. Both the apparent creep activation energy and the matrix contribution to creep resistance were found to increase with cobalt. These creep effects are attributed to cobalt lowering the stacking fault energy of the alloy matrix. The creep resistance loss due to the removal of cobalt is shown to be restored by slightly increasing the gamma' volume fraction. Results are compared to a previous study on Udimet 700, a higher strength, higher gamma' volume fraction alloy with similar phase chemistry, in which cobalt did not affect creep resistance. An explanation for this difference in behavior based on interparticle spacing and cross-slip is presented.

Jarrett, R. N.

New adatom model for Si(11) 7X7 and Si(111)Ge 5X5 reconstructed surfaces

A new adatom model differing from the conventional model by a reconstruction of the substrate is proposed. The new adatom structure provides an explanation for the 7x7 and 5x5 size of the unit cells seen on annealed Si(111) and Si(111)-Ge surfaces, respectively. The model is consistent with structural information from vacuum-tunneling microscopy. It also provides simple explanations for stacking-fault-type features expected from Rutherford backscattering experiments and for similarities in the LEED and photoemission spectra of 2x1 and 7x7 surfaces.

Chadi, D. J.

Deformation and erosion of f.c.c. metals and alloys under cavitation attack

Experimental investigations have been conducted to determine the early stages of cavitation attack on 6061-T6 aluminum alloy, electrolytic tough pitch copper, brass, and bronze, all having polycrystalline fcc matrices. The surface profiles and scanning electron micrographs show that the pits are initially formed at the grain boundaries, while the grain surfaces are progressively roughened by multiple slip and twinning. The initial erosion is noted to have occurred from the material in the grain boundaries, as well as by fragmentation of part of the grains. Further erosion occurred by shearing and necking of the surface undulations caused by plastic deformation. The mean penetration depth, computed on the basis of mass loss, was lowest on the bronze and greatest on the copper. Attention is given to the relation of cavitation attack to grain size, glide stress and stacking fault energy.

Rao, B. C. S.

Dislocation mechanism based model for stage II fatigue crack propagation rate

Repeated plastic deformation, which of course depends on dislocation mechanism, at or near the crack tip leads to the fatigue crack propagation. By involving the theory of thermally activated flow and the cumulative plastic strain criterion, an effort is made here to model the stage II fatigue crack propagation rate in terms of the dislocation mechanism. The model, therefore, provides capability to ascertain: (1) the dislocation mechanism (and hence the near crack tip microstructures) assisting the crack growth, (2) the relative resistance of dislocation mechanisms to the crack growth, and (3) the fracture surface characteristics and its interpretation in terms of the dislocation mechanism. The local microstructure predicted for the room temperature crack growth in copper by this model is in good agreement with the experimental results taken from the literature. With regard to the relative stability of such dislocation mechanisms as the cross-slip and the dislocation intersection, the model suggests an enhancement of crack growth rate with an ease of cross-slip which in general promotes dislocation cell formation and is common in material which has high stacking fault energy (produces wavy slips). Cross-slip apparently enhances crack growth rate by promoting slip irreversibility and fracture surface brittleness to a greater degree.

Mazumdar, P. K.

Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon

GaAs layers have been grown on porous silicon (PS) substrates with good crystallinity by molecular beam epitaxy. In spite of the surface irregularity of PS substrates, no surface morphology deterioration was observed on epitaxial GaAs overlayers. A 10-percent Rutherford backscattering spectroscopy minimum channeling yield for GaAs-on-PS layers as compared to 16 percent for GaAs-on-Si layers grown under the same condition indicates a possible improvement of crystallinity when GaAs is grown on PS. Transmission electron microscopy reveals that the dominant defects in the GaAs-on-PS layers are microtwins and stacking faults, which originate from the GaAs/PS interface. GaAs is found to penetrate into the PS layers. n-type GaAs/p-type PS heterojunction diodes were fabricated with good rectifying characteristics.

Lin, T. L.

Superconductivity in the high-Tc Bi-Ca-Sr-Cu-O system - Phase identification

Four phases are observed in superconducting Bi-Ca-Sr-Cu-O samples. The superconducting phase, with onset temperature near 120 K, is a 15.4-A-layered compound with composition near Bi2Ca1Sr2Cu2O9 and an A-centered orthorhombic unit subcell 5.41 x 5.44 x 30.78 A. X-ray diffraction and electron microscopy data are consistent with a structure of alternating perovskite and Bi2O2 layers. High-resolution transmission electron microscopy images reveal a b-axis superstructure of 27.2 A, numerous (001) stacking faults, and other defects.

Hazen, R. M.

Microscopy of epitaxially grown beta-SiC on 001-plane silicon

Various defects occurring in epitaxially grown layers of beta-SiC are characterized by TEM, and the mechanisms of growth and defect formation are discussed. In particular, attention is given to the following types of defects: misfit dislocations, interfacial twins, antiphase boundaries, threading dislocations, and wide stacking faults. Details of the experimental procedure are given.

Pirouz, P.

Deformation modeling and constitutive modeling for anisotropic superalloys

A study of deformation mechanisms in the single crystal superalloy PWA 1480 was conducted. Monotonic and cyclic tests were conducted from 20 to 1093 C. Both (001) and near-(123) crystals were tested, at strain rates of 0.5 and 50 percent/minute. The deformation behavior could be grouped into two temperature regimes: low temperatures, below 760 C; and high temperatures, above 820 to 950 C depending on the strain rate. At low temperatures, the mechanical behavior was very anisotropic. An orientation dependent CRSS, a tension-compression asymmetry, and anisotropic strain hardening were all observed. The material was deformed by planar octahedral slip. The anisotropic properties were correlated with the ease of cube cross-slip, as well as the number of active slip systems. At high temperatures, the material was isotropic, and deformed by homogeneous gamma by-pass. It was found that the temperature dependence of the formation of superlattice-intrinsic stacking faults was responsible for the local minimum in the CRSS of this alloy at 400 C. It was proposed that the cube cross-slip process must be reversible. This was used to explain the reversible tension-compression asymmetry, and was used to study models of cross-slip. As a result, the cross-slip model proposed by Paidar, Pope and Vitek was found to be consistent with the proposed slip reversibility. The results were related to anisotropic viscoplastic constitutive models. The model proposed by Walter and Jordan was found to be capable of modeling all aspects of the material anisotropy. Temperature and strain rate boundaries for the model were proposed, and guidelines for numerical experiments were proposed.

Milligan, Walter W.

Effects of Cobalt Concentration on the Relative Resistance to Octahedral and Cube Slip in Nickel-Base Superalloys

Compression yielding tests were performed at 760 C on crystals of the Ni base superalloys Rene 150 and a modified MAR-M247, both having two different Co concentrations. For both alloy bases, increasing Co concentration was shown to decrease the critical resolved shear stress for octahedral slip, but to have little effect on that for cube slip. The results suggest that decreasing complex stacking fault energy in the gamma-prime with increasing Co could account for the observed effects.

Bobeck, Gene E.

The effect of hydrogen on the deformation behavior of a single crystal nickel-base superalloy

The effect of hydrogen on the tensile deformation behavior of PWA 1480 is presented. Tensile tests were interrupted at different plastic strain levels to observe the development of the dislocation structure. Transmission electron microscopy (TEM) foils were cut perpendicular to the tensile axis to allow the deformation of both phases to be simultaneously observed as well as parallel to zone axes (III) to show the superdislocations on their slip planes. Similar to other nickel-base superalloys, hydrogen was detrimental to the room temperature tensile properties of PWA 1480. There was little effect on strength, however the material was severely embrittled. Even without hydrogen, the elongation-to-failure was only approximately 3 percent. The tensile fracture surface was made up primarily of ductile voids with regions of cleavage fracture. These cleavage facets are the eutectic (gamma') in the microstructure. It was shown by quantitative fractography that hydrogen embrittles the eutectic (gamma') and causes the crack path to seek out and fracture through the eutectic (gamma'). There was two to three times the amount of cleavage on the fracture surface of the hydrogen-charged samples than on the surface of the uncharged samples. The effect of hydrogen can also be seen in the dislocation structure. There is a marked tendency for dislocation trapping in the gamma matrix with and without hydrogen at all plastic strain levels. Without hydrogen there is a high dislocation density in the gamma matrix leading to strain exhaustion in this region and failure through the matrix. The dislocation structure at failure with hydrogen is slightly different. The TEM foils cut parallel to zone axes (III) showed dislocations wrapping around gamma precipitates. Zone axes (001) foils show that there is a lower dislocation density in the gamma matrix which can be linked to the effects of hydrogen on the fracture behavior. The primary activity in the gamma precipitates is in the form of superlattice intrinsic stacking faults (SISFs). These faults have also been reported in other ordered alloys and superalloys.

Walston, W. S.

Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

It has been found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1 deg. Previously, tilt angles of greater than 1.5 deg were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. the 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.

Powell, J. A.

Application of Oxidation to the Structural Characterization of Sic Epitaxial Films

Both 3C-SiC and 6H-SiC single-crystal films can be grown on vicinal (0001) 6H-SiC wafers. It is found that oxidation can be a powerful diagnostic process for (1) 'color mapping' the 3C and 6H regions of these films, (2) decorating stacking faults in the films, (3) enhancing the decoration of double positioning boundaries, and (4) decorating polishing damage. Contrary to previously published oxidation results, proper oxidation conditions can yield interference colors that provide a definitive map of the polytype distribution for both the Si face and C face of SiC films.

Powell, J. A.

The importance of properties in modeling

Casting and welding of superalloys, stainless steel and titanium alloys are processes which can be improved through modeling of heat flow, fluid flow, residual stress development, and microstructural evolution. These simulations require inputs of thermophysical data, some of which involves the partially or totally liquid state. In particular, these processes involve melting, flow in the liquid, and solidification. Modeling of such processes can lead to an improved understanding of defects such as shrinkage, inclusions, cracks, incomplete filling (or penetration), macrosegregation, improper grain structure, and deviations from dimensional specifications. Effective modeling can shorten process development time and improve quality. An approach to these problems is to develop efficient models; validate through correlations with thermal, distortion, and microstructural data; run parametric studies; extract knowledge based rules; and apply to adaptive closed loop control systems. With the appropriate pre- and post-processing, such analyses can be made 'user friendly'. This would include graphical user interfaces as well as realistic images and color maps. In such form, these models can be used for sensitivity analyses, which are useful in defining appropriate sensors and in the development of control strategies. Such modeling can be done at several levels, e.g., the MARO level, modeling large scale phenomena such as heat and fluid flow or material deformation; the MICRO level, modeling the development of dendrites, grains or precipitates; or at the NANO level, modeling point defects, dislocations, stacking faults, etc. There are many computational issues associated with these simulations, e.g. computational efficiency and accuracy. In addition, there are many materials issues, not the least of which is the availability of accurate high temperature thermophysical data for complex alloys. This would include latent heat of fusion, temperature dependent heat capacity and thermal conductivity (for liquid and solid), viscosity, surface tension, thermal expansion, mechanical properties, etc. Preliminary data is frequently gathered from the literature; however, this is often not available for modern alloys. If additional data are required, measurements can be used; however, these are costly, time consuming and can be erroneous due to a lack of testing standards or impure materials. Microstructural predictors can be extracted from thermal information, e.g. cooling rate and thermal gradient; the prediction of microstructure is dependent on solidus and liquidus temperature, mushy zone permeability, the solidification curve, volume changes, phase transformations, alloying effects (such as surface tension or viscosity), mold/metal reactions, metal/environment reactions, etc. Defect maps may be needed to predict the onset of shrinkage, hot cracking or 'freckling'. Constants may be needed for stress relaxation, dendrite coarsening, vaporization, etc. Visualization was used as a tool to better comprehend complex data sets associated with the analysis of directional solidification (including crystal growth) and welding. Examples include not only isotherms, but also cooling rate, growth rate and thermal gradient. The latter two are not single valued scalars, but rather time and space dependent vector fields. Efficient models were developed for both casting and welding to predict heat flow and the relationship to dendrite and grain growth. These codes include many of the non-linear effects, e.g. radiation, which dominate these processes. The home-built FDM code(s) were designed to be useful not only to the scientist, but also to the process engineer. Special output can be requested to compare directly to experimental data. Visualization procedures were developed to visualize critical results, e.g. fusion zone width at the surface opposite that where the arc is applied ('penetration'). Both elaborate and simplified distortion analyses were carried out. It is clear that extensive mechanical property data are critical in order to accurately predict residual stress patterns. A scheme is currently being developed to integrate these modeling tools into a set of control algorithms; however, the success of this approach is critically dependent on the availability of accurate high temperature thermophysical data.

Giamei, A. F.

Collision of cometlike and slightly differentiated bodies as an origin for ordinary chondrites

One of the keys to understanding the origins of chondrites is given by the characteristics of relict minerals in chondrules that survived chondrule formation. Some of the relic materials show shock deformation textures, such as high dislocation densities in relict olivine and stacking faults in relict pyroxene. The textures suggest that shock deformation was the cause of melting of the chondrules. Some of the olivine and pyroxene fragments in the matrix of the chondrites have been shown to have a composition closer to the relict minerals than minerals crystallized during the chondrule formation. This suggests that some of the fragments originated from the precursor materials of the chondrules. A proposed origin for chondrites is discussed here along with supporting observations and conclusions.

Kitamura, M.

Temperature Dependent Cyclic Deformation Mechanisms in Haynes 188 Superalloy

The cyclic deformation behavior of a wrought cobalt-base superalloy, Haynes 188, has been investigated over a range of temperatures between 25 and 1000 C under isothermal and in-phase thermomechanical fatigue (TMF) conditions. Constant mechanical strain rates (epsilon-dot) of 10(exp -3)/s and 10(exp -4)/s were examined with a fully reversed strain range of 0.8%. Particular attention was given to the effects of dynamic strain aging (DSA) on the stress-strain response and low cycle fatigue life. A correlation between cyclic deformation behavior and microstructural substructure was made through detailed transmission electron microscopy. Although DSA was found to occur over a wide temperature range between approximately 300 and 750 C the microstructural characteristics and the deformation mechanisms responsible for DSA varied considerably and were dependent upon temperature. In general, the operation of DSA processes led to a maximum of the cyclic stress amplitude at 650 C and was accompanied by pronounced planar slip, relatively high dislocation density, and the generation of stacking faults. DSA was evidenced through a combination of phenomena, including serrated yielding, an inverse dependence of the maximum cyclic hardening with epsilon-dot, and an instantaneous inverse epsilon-dot sensitivity verified by specialized epsilon-dot -change tests. The TMF cyclic hardening behavior of the alloy appeared to be dictated by the substructural changes occuring at the maximum temperature in the TMF cycle.

Rao, K. Bhanu Sankara

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.

Process and Radiation Induced Defects in Electronic Materials and Devices

Process and radiation induced defects are characterized by a variety of electrical techniques, including capacitance-voltage measurements and charge pumping. Separation of defect type into stacking faults, displacement damage, oxide traps, interface states, etc. and their related causes are discussed. The defects are then related to effects on device parameters. Silicon MOS technology is emphasized. Several reviews of radiation effects and silicon processing exist.

Washington, Kenneth