The Impact of Substrate Selection on Thermal Performance of AlGaN Channel HEMTs
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Myren, Dominic [ University of Connecticut]↗
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Microsensor Technologies for Plant Growth System Monitoring
This document covered the following: a) demonstration of feasibility of microsensor for tube and particulate growth systems; b) Dissolved oxygen; c)Wetness; d) Flexible microfluidic substrate with microfluidic channels and microsensor arrays; e)Dynamic root zone control/monitoring in microgravity; f)Rapid prototyping of phytoremediation; and g) A new tool for root physiology and pathology.
Kim, Chang-Soo↗
Epitaxial yttria-stabilized zirconia on (1 -1 0 2) sapphire for YBa2Cu3O(7-delta) thin films
Epitaxial yttria-stabilized zirconia (YSZ) films were deposited on (1 -1 0 2) sapphire by pulsed laser deposition. The films are formed in a cubic phase with the a axis normal to the substrate surface. Ion beam channeling measurements show that the YSZ films are highly crystalline with a channeling minimum yield of 8 percent. The epitaxial relationship between the film and substrate is further confirmed by a cross-section TEM study. Epitaxial YBa2Cu3O(7-delta) thin films deposited on YSZ/sapphire have Tc and Jc of up to 89 K and 10 to the 6th A/sq cm at 77 K, respectively.
Wu, X. D.↗
A study of trends and techniques for space base electronics
The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized.
Trotter, J. D.↗
Trends and Techniques for Space Base Electronics
Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized.
Trotter, J. D.↗
Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors
Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.
Lai, R.↗
Performance Characterization of a Prototype Ultra-Short Channel Monolith Catalytic Reactor for Air Quality Control Applications
Contaminated air and process gases, whether in a crewed spacecraft cabin atmosphere, the working volume of a microgravity science or ground-based laboratory experiment facility, or the exhaust from an automobile, are pervasive problems that ultimately effect human health, performance, and well-being. The need for highly-effective, economical decontamination processes spans a wide range of terrestrial and space flight applications. Adsorption processes are used widely for process gas decontamination. Most industrial packed bed adsorption processes use activated carbon because it is cheap and highly effective. Once saturated, however, the adsorbent is a concentrated source of contaminants. Industrial applications either dump or regenerate the activated carbon. Regeneration may be accomplished in-situ or at an off-site location. In either case, concentrated contaminated waste streams must be handled appropriately to minimize environmental impact. As economic and regulatory forces drive toward minimizing waste and environmental impact, thermal catalytic oxidation is becoming more attractive. Through novel reactor and catalyst design, more complete contaminant destruction and greater resistance to poisoning can achieved leading to less waste handling, process down-time, and maintenance. Performance of a prototype thermal catalytic reactor, based on ultra-short channel monolith (USCM) catalyst substrate design, under a variety of process flow and contaminant loading conditions is discussed. The experimental results are evaluated against present and future air quality control and process gas purification processes used on board crewed spacecraft.
Perry, J. L.↗
G(sup 4)FET Implementations of Some Logic Circuits
Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET
Mojarradi, Mohammad↗
Modularization of Ceramic Hollow Fiber Membrane Technology for Air Separation
This proposed project is aimed at studying high performance and economically competitive ceramic membrane technology for air separation and high-purity oxygen production using hollow fiber ceramic membrane stack and module technology. The design of the single permeate membrane is a hollow fiber substrate-supported thin tri-layer structure. Radially well-aligned micro-channels are embedded in the thick substrate and open at the inner surface of the substrate, enabling facile air/gas diffusion. The tri-layer structure of thin dense membrane layer (~ 10 µm) sandwiched by porous surface layer on either side is then built on the substrate using advanced fabrication process. The tri-layer structure design allows different materials to be used in different layers, where the materials of surface layers have high surface exchange coefficients while the material of dense layer has high bulk diffusivity. Such a synergetic combination leads to high permeation performance. The focus of the proposed project will be on membrane stack/module development using the developed single hollow fiber membranes, including: 1) fabrication and characterization of novel single hollow fiber membranes; 2) membrane stack design and assembly using fabricated single membranes; 3) stack modeling and analysis to guide membrane stack designs; 4) permeation performance testing and characterization of membrane stacks. The hollow fiber feature and simple sealing requirement enable very compact design of membrane stacks, which have excellent flexibility for further modularizations at different scales. The operations of such membrane stack and module may employ the exhaust heat from other components of Integrated Gasification Combined Cycle and oxy-combustion systems. Therefore, modularization of such an air separation membrane technology can be incorporated into the DOE’s REMS (radically engineered modular systems)-gasification skid and support the oxidant feed of an oxygen-blown REMS gasifier scaled to different ranges.
01 COAL, LIGNITE, AND PEAT↗
Transient catalytic combustor model
A quasi-steady gas phase and thermally thin substrate model is used to analyze the transient behavior of catalytic monolith combustors in fuel lean operation. The combustor response delay is due to the substrate thermal inertia. Fast response is favored by thin substrate, short catalytic bed length, high combustor inlet and final temperatures, and small gas channel diameters. The calculated gas and substrate temperature time history at different axial positions provides an understanding of how the catalytic combustor responds to an upstream condition change. The computed results also suggest that the gas residence times in the catalytic bed in the after bed space are correlatable with the nondimensional combustor response time. The model also performs steady state combustion calculations; and the computed steady state emission characteristics show agreement with available experimental data in the range of parameters covered. A catalytic combustor design for automotive gas turbine engine which has reasonably fast response ( 1 second) and can satisfy the emission goals in an acceptable total combustor length is possible.
Tien, J. S.↗
Solar cell collector and method for producing same
A transparent, conductive collector layer containing conductive metal channels is formed as a layer on a photovoltaic substrate by coating a photovoltaic substract with a conductive mixed metal layer. A heat sink having portions protruding from one of its surfaces is attached. These protruding portions define a continuous pattern in combination with recessed regions among them such that they are in contact with the conductive layer of the photovoltaic substrate. Heating the substrate while simultaneously oxidizing the portions of the conductive layer exposed to a gaseous oxidizing substance forced into the recessed regions of the heat sink, creates a transparent metal oxide layer on the substrate. A continous pattern of highly conductive metal channels is contained in the metal oxide layer.
Evans, J. C., Jr.↗
Optically activated switch/modulator using a photoconductor and two channel waveguides
An optically activated switch was fabricated on LiNbO3 substrate by deposition of photoconductor-metal electrode structure on two channel waveguides obtained by the outdiffusion process. One waveguide was overcoated with a CdS film, and served as a light detector which converted the optical signal in that waveguide into an electric signal. Utilizing the electrooptic effect, this electric signal modulated the light propagating in the second waveguide by changing the refractive index, and the cutoff condition, of the waveguiding channel between two metal electrodes. The waveguides in the optically controlled switch can be either single or multimode. The length of the device can be short in comparison with other switching schemes. When binary optical signals are applied to the two waveguides, the switch can perform logic AND, NEGATION, OR and pseudo-amplification operations.
Goldberg, L.↗
Back contacts for silicon-on-ceramic solar cells
Grooved substrate exposes back surface of photovoltaic cells, allowing dopant diffusion into surface and electrical contact. When substrate is coated successively with carbon and molten silicon, polycrystalline-silicon bridges form over grooves, but leave channels open. Best adhesion results when substrate grooves run perpendicular to direction of liquid-silicon layer and are closely spaced.
Schuller, T. L.↗
Characterizing the subglacial environment of lower Thwaites Glacier using radar modeling
Understanding the spatial heterogeneity beneath Thwaites Glacier, West Antarctica, is vital to projecting its impact on future sea levels. Radar-echo sounding (RES) is commonly used to infer subglacial conditions, but these data can be challenging to interpret. We assess basal heterogeneity across Thwaites Glacier by comparing RES returns to a radar backscattering simulator for over 400 km of RES data. The modeled variations in bed returned power exhibited a strong correlation with actual RES data in 40% of our simulated flight segments, which we consider evidence for a relatively homogeneous glacier bed. Other sites (40%) demonstrated improved fit quality when hydrology or substrate transitions were introduced in the bed material model. The remaining simulated segments (20%) were diagnosed as having more complex basal heterogeneity. The spatial distribution of complex heterogeneity appears to coincide with asymmetric patterns in the RES specularity content, which has been interpreted in previous studies as a signature for channelized hydrology. Conversely, the homogeneous substrate locations coincide with areas of fast-moving ice in western Thwaites. Our simulation method can isolate power variations induced by material heterogeneity vs topography, which is an important limitation of existing RES analysis methods.
Antarctic glaciology↗
Edge passivated charge-coupled device image sensor
A charge-coupled device (CCD) image sensor includes in a substrate of single crystalline silicon of one conductivity type an array of a plurality of spaced, parallel channel regions of the opposite conductivity type extending along one major surface of the substrate. A plurality of parallel conductive gates are over the one major surface of the substrate and extend transversely across the channel regions. The outermost channel regions of the array are positioned adjacent edges of the substrate so that a plurality of the image sensors can be mounted in edge-to-edge relation with the channel regions of the various sensors being close together. The sensor includes passivating means between each outermost channel region and the adjacent edge to prevent charge carriers generated by the edge from being injected into the outermost channel region. The passivating means includes a highly conductive drain region of a conductivity type opposite to that of the substrate within the substrate and extending along the one major surface between the outermost channel region and the edge. Also, a highly conductive region of the same conductivity type as the substrate is on the substrate and extends along the one major surface directly at the edge.
Kosonocky, Walter F.↗
Fabrication of Channels for Nanobiotechnological Devices
A method, now undergoing development, of forming nanochannels in planar substrates is intended to enable the fabrication of advanced fluidic devices that could be integrated with complementary metal oxide semiconductor (CMOS) electronic circuits. Such integral combinations of fluidic and electronic components ("laboratory-on-a-chip" devices) could be used, for example, to detect individual molecules of deoxyribonucleic acid (DNA) and proteins. The width of a channel in such a device would be chosen so that molecules of the species of interest would move along the channel in single file. In this method, the fabrication of channels includes the use of such CMOS-compatible processes as chemical-mechanical polishing and oxide deposition. The layout of the channels in the substrate plane is determined by a single photolithographic process, but it is not a nanoscale lithographic process, and this process is not relied upon to define the thickness and width of the channels. Stating it from a slightly different perspective, unlike in the prior fabrication of electronic and fluidic devices involving the use of lithography to define microscale features, this process does not include the use of lithography to define nanoscale features. It is this aspect of the method that enables simplification of the process and, hence, a decrease in cost.
Lee, Choonsup↗
Mode characteristics of nonplanar double-heterojunction and large-optical-cavity laser structures
Mode behavior of nonplanar double-heterojunction (DH) and large-optical-cavity (LOC) lasers is investigated using the effective index method to model the lateral field distribution. The thickness variations of various layers for the devices discussed are correlated with the growth characteristics of liquid-phase epitaxy over topographical features (channels, mesas) etched into the substrate. The effective dielectric profiles of constricted double-heterojunction (CDH)-LOC lasers show a strong influence on transverse mode operation: the fundamental transverse mode (i.e., in the plane perpendicular to the junction) may be laterally index-guided, while the first (high)-order mode is laterally index-antiguided. The analytical model developed uses a smoothly varying hyperbolic cosine distribution to characterize lateral index variations. The waveguide model is applied to several lasers to illustrate conditions necessary to convert leaky modes to trapped ones via the active-region gain distribution. Theoretical radiation patterns are calculated using model parameters, and matched to an experimental far-field pattern.
Butler, J. K.↗
Postseismic deformation and stress diffusion due to viscoelasticity and comments on the modified Elsasser model
Finite element techniques have been used to investigate the far-field deformation and stress changes due to asthenospheric viscoelastic relaxation following a dip-slip earthquake. The diffusion of extensional stress toward the subduction zone following a thrust earthquake on land is qualitatively consistent with the modified Elsasser model as proposed by Rydelek and Sacks (1988, 1990) to explain the coupled occurrence of land and sea earthquakes near Japan. However, the magnitude of the diffusing tensional signal is significantly smaller. The nominal model consists of a partially faulted elastic lithosphere overlying a viscoelastic substrate. Other models consider thin channel flow, rupturing of the entire elastic lithosphere, and changes in the depth of faulting. While some of these changes have significant impact on the magnitude and spatial features of the stress and deformation field, the far-field stress remains small. Numerical experiments demonstrate that the assumptions of the modified Elsasser model accentuate uniaxial deformation. When these assumptions are replicated in the finite element calculations, reasonable agreement between the models is achieved.
Cohen, Steven C.↗