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At least 55 records · Page 3

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NASA NTRS2014

Device and Method for Gathering Ensemble Data Sets

An ensemble detector uses calibrated noise references to produce ensemble sets of data from which properties of non-stationary processes may be extracted. The ensemble detector comprising: a receiver; a switching device coupled to the receiver, the switching device configured to selectively connect each of a plurality of reference noise signals to the receiver; and a gain modulation circuit coupled to the receiver and configured to vary a gain of the receiver based on a forcing signal; whereby the switching device selectively connects each of the plurality of reference noise signals to the receiver to produce an output signal derived from the plurality of reference noise signals and the forcing signal.

Racette, Paul E.↗

DOE OSTI2020

Secured fault detection in a power substation

Systems and methods for fault detection and protection in electric power systems that evaluates electromagnetic transients caused by faults. A fault can be detected using sampled data from a first monitored point in the power system. Detection of fault transients and associated characteristics, including transient direction, can also be extracted through evaluation of sample data from other monitored points in the power system. A monitoring device can evaluate whether to trip a switching device in response to the detection of the fault and based on confirmation of an indication of detection of fault transients at the other monitored points of the power system. The determination of whether to trip or activate the switching device can also be based on other factors, including the timing of receipt of an indication of the detection of the fault transients and/or an evaluation of the characteristics of the detected transients.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

Secured fault detection in a power substation

Cui, Tao↗

DOE OSTI2023

Nanostructured devices having perovskite nanocrystal layer for photodetection, optical memory, and neuromorphic functionality

The present disclosure relates to a device that includes a perovskite nanocrystal (NC) layer, a charge separating layer, an insulating layer, a gate electrode, a cathode, and an anode, where the charge separating layer is positioned between the perovskite NC layer and the insulating layer, the insulating layer is positioned between the charge separating layer and the gate electrode, and the cathode and the anode both electrically contact the charge separating layer and the insulating layer. In some embodiments of the present disclosure, the device may be configured to operate as at least one of a photodetector, an optical switching device, and/or a neuromorphic switching device.

Blackburn, Jeffrey Lee↗

DOE OSTI2024

DC Microgrid Reliability Enhancement with Adaptive Converter Thermal Management

Due to the different device selections, aging levels, and thermal dissipation performance, some converters may take additional thermal stress on switching devices than others in paralleled converter systems, which will reduce system reliability. To address this problem, this paper proposes a power-sharing strategy with adaptive thermal management. First, the temperature-based power loss model and electrical-thermal model are established. Based on that, a high-accuracy IGBT junction temperature estimate considering the power loss-temperature coupling can be achieved. Further, the thermal-sharing for all the switching devices in paralleled converters can be achieved with the proposed adaptive thermal management strategy. The proposed strategy can change the power-sharing ratio adaptively according to the system operation conditions, which will contribute to the system reliability enhancement. The effectiveness of the proposed strategy is verified through PLECS thermal simulation and joint real-time simulation with Dspace and RT-box.

DC microgrid↗

NASA NTRS2011

Reconfigurable Microwave Phase Delay Element for Frequency Reference and Phase-Shifter Applications

A technique was developed to provide a reconfigurable high-precision micro - wave electrical phase delay for resonators and phase shifters. The invention employs multiple branches of transmission lines with open-ended or ground-ended terminations as configurable bits or digits. This technique minimizes the errors due to limited precision of switching devices. In addition, the proposed linear analytical approach significantly produces a much simpler design than that of other prior inventions at the time of this reporting. Microwave components such as filters, phase delay elements, or resonators require a method that can accurately adjust their frequency responses. Most tuning techniques offer very wide frequency tuning range; however, it is often difficult and expensive to tune their response in a very narrow operating frequency, especially when the tuning element reaches its minimum discrete step due to fabrication tolerances. The problem becomes worse as the operating frequency is in mm-wave frequency range (>26 GHz). The electrical tuning sensitivity of a microwave line is dependent on the position of the tuning element with respect to the reference termination. By placing this tuning element away from this reference with the main transmission line connecting the two elements together the sensitivity of the tuning element can change significantly. This concept can be used in the system that requires multiple tuning sensitivities. In this case, multiple tuning branches are superimposed in the main transmission line. The proposed invention allows the transmission-line electrical length to be accurately programmed using switching elements that have limited accuracy. The invention consists of multiple branches of transmission lines connected to discrete switching devices with open-ended terminations. They are used as discrete tuning elements. These elements are connected to the main microwave transmission line and are separated by a well-defined electrical degree spacing. Each branch is programmed to have different electrical degree sensitivity, such as a combination of discrete steps in each branch, which results in a reflective line with a unique effective phase response. To reduce the number of switching devices, it is desirable to program the devices in binary configuration where each branch represents one bit in the base-2 number system. This invention allows the transmission line electrical length to be tuned precisely with customizable sensitivity based on the known sensitivity of the base tuning circuit. The tuning resolution is dependent on the distance among tuning branches.

Hsieh, Wen-Ting↗

DOE OSTI2025

Resistive Switching in SrFeO2.5/Nb:SrTiO3 Heterostructures with Growth-Controlled Film Orientation

Resistive switching, a behavior found in many oxide materials, has the potential to enable emerging computer hardware technologies and architectures. We present resistive switching devices fabricated from epitaxial brownmillerite SrFeO2.5 films with two distinct film orientations, wherein facile oxygen ion diffusion planes are aligned parallel (in-plane) and perpendicular (out-of-plane) with the electrodes. SrFeO2.5 films were grown on (001) oriented Nb:SrTiO3 to enable high-quality interfaces and future integration with Si CMOS technologies. Post-growth vacuum annealing and growth pressure were used to control film orientations, as confirmed by transmission electron microscopy and x-ray diffraction measurements. Films grown with diffusion planes oriented in-plane had oxygen-rich, perovskite-like nanodomains spread throughout the film, and fabricated devices exhibited worse switching consistency and more stochasticity. In contrast, films grown with diffusion planes oriented out-of-plane had a more uniform oxygen-rich perovskite interfacial layer above the bottom electrode, and devices built from this film orientation showed significant statistical improvements in switching voltages and cycling consistency.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1987

High-Voltage Switch Containing (DI)2 Devices

Series switching diodes triggered on by passing above threshold voltage. High-voltage switch made by connecting multitude of deep-impurity, double-injection devices in series with each other and with another, triggerable high-voltage device such as thyristor. Device operates near ground potential to avoid insulation problems in triggering circuit.

Hanes, Maurice H.↗

DOE OSTI2021

Semiconductor topologies and devices for soft starting and active fault protection of power converters

Various examples are provided related to semiconductor topologies and devices that can be used for soft starting and active fault protection of power converters. In one example, an active switch device includes an active switch having a gating control input; and a thyristor having a gating control input. The thyristor is coupled in parallel with the active switch. The active switch can be an IGBT, MOSFET, or other appropriate device. In another example, a power converter can include the active switch devices and switching control circuitry coupled to gating control inputs of the active switch devices.

Beddingfield, Richard B.↗

NASA NTRS2008

A Novel Nanoionics-Based Switch for Microwave Applications

This paper reports the development and characterization of a novel switching device for use in microwave systems. The device utilizes a switching mechanism based on nanoionics, in which mobile ions within a solid electrolyte undergo an electrochemical process to form and remove a conductive metallic "bridge" to define the change of state. The nanoionics-based switch has demonstrated an insertion loss of approx.0.5dB, isolation of >30dB, low voltage operation (1V), low power (approx. micro-W) and low energy (approx. nJ) consumption, and excellent linearity up to 6 GHz. The switch requires fewer bias operations (due to non-volatile nature) and has a simple planar geometry allowing for novel device structures and easy integration into microwave power distribution circuits.

Nessel, James A.↗

DOE OSTI2020

Control of SiC Based Integrated DC-DC Powertrain Charger for Electric Vehicles

In this paper, an automated controller for an integrated, reconfigurable dc-dc converter for plugin electric vehicles (EVs) is presented. The integrated converter combines both an interleaved boost converter and dual active bridge (DAB) converter, sharing magnetics and switching devices. The converter switches between operating modes using the existing battery management system (BMS) contactors. The integrated converter operates in isolated DAB mode during battery charging operation. During traction operation, the integrated converter is operated in interleaved boost mode for heavy load and DAB mode during light load, high voltage operation. An online transition algorithm is used to transition from interleaved boost mode to DAB mode with minimal bus distortion. The automated controller selects the operating mode and inverter bus voltage at different torque-speed conditions to get maximum overall traction drive efficiency. An experimental prototype of the integrated converter demonstrates the automated controller functionality.

Anwar, Saeed↗

NASA NTRS2002

Electronics for Deep Space Cryogenic Applications

Deep space probes and planetary exploration missions require electrical power management and control systems that are capable of efficient and reliable operation in very cold temperature environments. Typically, in deep space probes, heating elements are used to keep the spacecraft electronics near room temperature. The utilization of power electronics designed for and operated at low temperature will contribute to increasing efficiency and improving reliability of space power systems. At NASA Glenn Research Center, commercial-off-the-shelf devices as well as developed components are being investigated for potential use at low temperatures. These devices include semiconductor switching devices, magnetics, and capacitors. Integrated circuits such as digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being evaluated. In this paper, results will be presented for selected analog-to-digital converters, oscillators, DC/DC converters, and pulse width modulation (PWM) controllers.

Patterson, R. L.↗

NASA NTRS1974

Photomultiplier circuit including means for rapidly reducing the sensitivity thereof

A simple, reliable and inexpensive control circuit is described for rapidly reducing the bias voltage across one or more of the dynode stages of a photomultiplier, to substantially decrease its sensitivity to incoming light at those times where excess light intensity might damage the tube. The control circuit comprises a switching device, such as a silicon controlled rectifier (SCR), coupled between a pair of the electrodes in the tube, preferably the cathode and first dynode, or the first and second dynodes, the switching device operating in response to a trigger pulse applied to its gate to short circuit the two electrodes. To insure the desired reduction in sensitivity, two switching stages, the devices be employed between two of the electrode stages, the devices being operated simultaneously to short circuit both stages.

Mcclenahan, J. O.↗

DOE OSTI2022

Reduced Stochastic Resistive Switching in Organic-Inorganic Hybrid Memristors by Vapor-Phase Infiltration

We report resistive random-access memory (RRAM) is promising for next-generation data storage and non-von Neumann computing hardware. However, tuning device switching characteristics and particularly, controlling their stochastic variation remain as critical challenges. Here, new organic-inorganic hybrid RRAM media are reported whose bipolar switching characteristics and stochasticity can be controlled by vapor-phase infiltration (VPI), an ex situ hybridization technique derived from atomic layer deposition. Hybrid RRAMs based on AlO x -infiltrated SU-8 feature facile tunability of device switching voltages, off-state current, and on-off ratio by adjusting the amount of infiltrated AlO x in the hybrid. Furthermore, a significant reduction in the stochastic, cycle-to-cycle variations of switching parameters is enabled by AlO x infiltration, driven by the infiltration-induced changes in mechanical, dielectric, and chemical properties of organic medium and their influence on the dimension and formation characteristics of conductive filaments. Finally, multi-level analog switching potentially useful for neuromorphic applications are demonstrated, along with direct, one-step device patterning exploiting the negative-tone resist feature of SU-8. With the demonstrated control over switching characteristics and stochastic variation, combined with analog switching and one-step patterning capabilities, the results not only present a novel hybrid medium for RRAM applications but also showcase the utility of VPI for developing new, high-performance hybrid RRAM devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS1985

Remote Power Controllers For High-Power dc Switching

Circuits combine functions of remotely controlled switch and circuit breaker. Circuits developed at different power levels but conceptually very similar. Selection of appropriate switching devices and minor modifications, circuits used to build RPC's covering range of voltage and power levels limited only by switching devices chosen. RPC's using GTO's have power capability ranging from 7.8 to 52 kW, while those using MOSFET's range from 8 to 15 kW. Applications include satellite, Space Station, commerical aircraft, naval vessels, and numerous industrial areas.

Sturman, J. C.↗

NASA NTRS1975

Two dimensional thermal and charge mapping of power thyristors

The two dimensional static and dynamic current density distributions within the junction of semiconductor power switching devices and in particular the thyristors were obtained. A method for mapping the thermal profile of the device junctions with fine resolution using an infrared beam and measuring the attenuation through the device as a function of temperature were developed. The results obtained are useful in the design and quality control of high power semiconductor switching devices.

Hu, S. P.↗

NASA NTRS1985

High-voltage, high-power, solid-state remote power controllers for aerospace applications

Two general types of remote power controller (RPC) that combine the functions of a circuit breaker and a switch were developed for use in direct-current (dc) aerospace systems. Power-switching devices used in these designs are the relatively new gate-turnoff thyristor (GTO) and poweer metal-oxide-semiconductor field-effect transistors (MOSFET). The various RPC's can switch dc voltages to 1200 V and currents to 100 A. Seven different units were constructed and subjected to comprehensive laboratory and thermal vacuum testing. Two of these were dual units that switch both positive and negative voltages simultaneously. The RPC's using MOSFET's have slow turnon and turnoff times to limit voltage spiking from high di/dt. The GTO's have much faster transition times. All RPC's have programmable overload tripout and microsecond tripout for large overloads. The basic circuits developed can be used to build switchgear limited only by the ratings of the switching device used.

Sturman, J. C.↗

NASA NTRS1999

Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

Neudeck, Philip G.↗