Search NASA⌕ Search

SEARCH · Search NASA

Results for “terahertz”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
NASA NTRS2012

Terahertz Radiometer for Outer Planet and Moon Atmospheres (TROPA)

We are developing a prototype instrument platform to demonstrate the feasibility of a wideband spectrometer for planetary applications under a three-year NASA research program. This development focuses on three specific areas needing advancement. First, the terahertz portion consists of an optical bench with dual heterodyne Schottky-mixer based receivers, one for each band. The beams entering the horns of the two receivers are de-multiplexed from the input beam by a polarizing beam splitter. The blocks containing the 560 and 1200 GHz mixer are more highly integrated than previous space instruments to reduce mass and volume. The receivers take a fundamental pump frequency near 30 GHz and multiply up to the submillimeter range. Second, a rapid-tuning, low-phase noise, and low-power 33 GHz range LO synthesizer is being prototyped. The low phase noise requirement is needed because of the factor of 36 multiplication to reach 1200 GHz, giving a requirement that the integrated phase noise from 100 kHz up be less than 0.6 degrees. The synthesizer will require about 6 watts. Finally, we are developing an advanced polyphase filter back-end spectrum analyzer with a bandwidth of 750 MHz, and power consumption of about 3 Watts and 4096 channels. This system is based on a simple three-chip architecture, having a commercial 1.5 GS/s analog-to-digital converter, an ASIC to do the filtering and an advanced FPGA for data processing and control.

spectrometer↗
NASA NTRS2012

Array Technology for Terahertz Imaging

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

Terahertz↗
NASA NTRS2010

Fast, High-Resolution Terahertz Radar Imaging at 25 Meters

We report improvements in the scanning speed and standoff range of an ultra-wide bandwidth terahertz (THz) imaging radar for person-borne concealed object detection. Fast beam scanning of the single-transceiver radar is accomplished by rapidly deflecting a flat, light-weight subreflector in a confocal Gregorian optical geometry. With RF back-end improvements also implemented, the radar imaging rate has increased by a factor of about 30 compared to that achieved previously in a 4 m standoff prototype instrument. In addition, a new 100 cm diameter ellipsoidal aluminum reflector yields beam spot diameters of approximately 1 cm over a 50x50 cm field of view at a range of 25 m, although some aberrations are observed that probably arise from misaligned optics. Through-clothes images of a concealed threat at 25 m range, acquired in 5 seconds, are presented, and the impact of reduced signal-to-noise from an even faster frame rate is analyzed. These results inform the system requirements for eventually achieving sub-second or video-rate THz radar imaging.

standoff concealed weapons detection↗
NASA NTRS2016

Silicon Micromachined Modulated Metasurface Antennas in the Terahertz Range

This paper explores the capabilities of a class of metasurface (MTS), which consists of metalized cylinders on a ground plane, for the realization of modulated MTS antennas at terahertz (THz) frequencies. The proposed structure is particularly appropriate for being micromachined out of a silicon wafer by means of deep reactive ion etching (DRIE). The constraints that DRIE imposes in the design of the MTS unit cell are discussed, along with the advantages of silicon micromachined modulated MTSs with respect to other fabrication approaches in the THz range.

deep-reactive ion etching↗
NASA NTRS1998

A Terahertz Grid Frequency Doubler

We present a 144-element terahertz quasi-optical grid frequency doubler. The grid is a planar structure with bow-tie antennas as a unit cell each loaded with a planar Schottky diode.

Terahertz↗
NASA NTRS1991

Tunnel transit-time (TUNNETT) devices for terahertz sources

The potential and capabilities of tunnel transit-time (TUNNETT) devices for power generation in the 100-1000 GHz range are presented. The basic properties of these devices and the important material parameters which determine their properties are discussed and criteria for designing such devices are presented. It is shown from a first-order model that significant amounts of power can be obtained from these devices in the terahertz frequency range.

Haddad, G. I.↗
NASA NTRS1991

Low-loss monolithic transmission lines for submillimeter and terahertz frequency applications

The design and construction of low-loss monolithic transmission lines are critical to systems which require that terahertz-power be guided to the antenna front ends. Two types of novel monolithic guiding structures, designed for the 0.3-2.0 THz and 0.1-0.3 THz ranges, respectively, are proposed. The novel waveguides are constructed from dielectric materials and structures which are available in monolithic technology so that the integration of active devices is possible. Propagation in each of the waveguides is characterized over relevant frequency ranges by applying a mode-matching technique, which takes into account all forms of electromagnetic coupling as well as losses in the dielectrics. The structures are predicted to exhibit excellent power confinement and low losses.

Engel, Andrew G., Jr.↗
NASA NTRS1992

The Third International Symposium on Space Terahertz Technology: Symposium proceedings

Papers from the symposium are presented that are relevant to the generation, detection, and use of the terahertz spectral region for space astronomy and remote sensing of the Earth's upper atmosphere. The program included thirteen sessions covering a wide variety of topics including solid-state oscillators, power-combining techniques, mixers, harmonic multipliers, antennas and antenna arrays, submillimeter receivers, and measurement techniques.

Source record↗
NASA NTRS1992

Coherent systems in the terahertz frequency range: Elements, operation, and examples

The topics are presented in viewgraph form and include the following: terahertz coherent systems applications; a brief overview of selected components; radiometry and spectroscopy--astronomy; radiometry--aircraft all weather landing system; radiometry--atmospheric remote sensing; plasma diagnostics; communications; radar systems; and materials measurement and manufacturing process control.

Goldsmith, Paul F.↗
NASA NTRS1992

Quasi-optical antenna-mixer-array design for terahertz frequencies

A new quasi-optical antenna-mixer-array design for terahertz frequencies is presented. In the design, antenna and mixer are combined into an entity, based on the technology in which millimeter-wave horn antenna arrays have been fabricated in silicon wafers. It consists of a set of forward- and backward-looking horns made with a set of silicon wafers. The front side is used to receive incoming signal, and the back side is used to feed local oscillator signal. Intermediate frequency is led out from the side of the array. Signal received by the horn array is picked up by antenna probes suspended on thin silicon-oxynitride membranes inside the horns. Mixer diodes will be located on the membranes inside the horns. Modeling of such an antenna-mixer-array design is done on a scaled model at microwave frequencies. The impedance matching, RF and LO isolation, and patterns of the array have been tested and analyzed.

Guo, Yong↗
NASA NTRS1992

InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

Bhapkar, Udayan V.↗
NASA NTRS1992

Millimeter-wave and terahertz integrated circuit antennas

This paper presents a comprehensive review of integrated circuit antennas suitable for millimeter and terahertz applications. A great deal of research was done on integrated circuit antennas in the last decade and many of the problems associated with electrically thick dielectric substrates, such as substrate modes and poor radiation patterns, have been understood and solved. Several new antennas, such as the integrated horn antenna, the dielectric-filled parabola, the Fresnel plate antenna, the dual-slot antenna, and the log-periodic and spiral antennas on extended hemispherical lenses, have resulted in excellent performance at millimeter-wave frequencies, and are covered in detail in this paper. Also, a review of the efficiency definitions used with planar antennas is given in detail in the appendix.

Rebeiz, Gabriel M.↗
NASA NTRS1999

Coherent Pump-Probe Interactions and Terahertz Intersubband Gain in Semiconductor Quantum Wells

In recent years there has been considerable interest in intersubband-transition-based infrared semiconductor quantum well (QW) lasers because of their potential applications. In the mid-infrared range, both electrically-injected quantum cascade lasers [1] and optically-pumped multiple QW lasers [2] have been experimentally realized. In these studies, optical gain is due to population inversion between the lasing subbands. It was also proposed that stimulated Raman scattering in QW systems can produce net infrared optical gain [3j. In such a nonlinear optical scheme, the appearance of optical gain that may lead to intersubband Raman lasers does not rely on the population inversion. Since, in tile resonant Raman process (Raman gain is the largest in this case), the pump field induces population redistribution among subbands in the QW s ystem, it seems that a realistic estimate of the optical gain has to include this effect. Perturbative calculations used in the previous work [3] may overestimate the Raman gain. In this paper we present a nonperturbative calculation of terahertz gain of optically-pumped semiconductor step quantum wells. Limiting optical transitions within the conduction band of QW, we solve the pump-field-induced nonequilibrium distribution function for each subband of the QW system from a set of coupled rate equations. Both intrasubband and intersubband relaxation processes in the quantum well system are included. Taking into account the coherent interactions between pump and THz (signal) waves, we we derive the susceptibility of the QW system for the THz field. For a GaAs/AlGaAs step QW, we calculate the Thz gain spectrum for different pump frequencies and intensities. Under moderately strong pumping (approximately 0.3 MW/sq cm), a significant THz gain (approximately 300/m) is predicted. It is also shown that the coherent wave interactions (resonant stimulated Raman processes) contribute significantly to the THz gain.

Liu, Ansheng↗
NASA NTRS1999

Terahertz Optical Gain Based on Intersubband Transitions in Optically-Pumped Semiconductor Quantum Wells: Coherent Pumped-Probe Interactions

Terahertz optical gain due to intersubband transitions in optically-pumped semiconductor quantum wells (QW's) is calculated nonperturbatively. We solve the pump- field-induced nonequilibrium distribution function for each subband of the QW system from a set of rate equations that include both intrasubband and intersubband relaxation processes. The gain arising from population inversion and stimulated Raman processes is calculated in a unified manner. We show that the coherent pump and signal wave interactions contribute significantly to the THz gain. Because of the optical Stark effect and pump-induced population redistribution, optical gain saturation at larger pump intensities is predicted.

Liu, Ansheng↗
NASA NTRS1998

Simultaneous amplification of terahertz difference frequencies by an injection-seeded semiconductor laser amplifier at 850 nm

Two-frequency operation of an 850 nm semiconductor optical amplifier was achieved by simultaneously injection seeding it with two diode lasers. The two frequencies could be independently amplified without strong interference when they were separated by more than 10 GHz, and the spectral purity was preserved by the amplification process. At frequency differences below 10 GHz, unbalanced two-frequency output was observed, which can be explained by a two-mode interaction driven by the refractive index modulation at the beat frequency. The laser system is suitable for the difference-frequency generation of coherent terahertz radiation in ultra-fast photoconductors or nonlinear optical media.

NASA Discipline Exobiology↗
NASA NTRS2002

Improved equivalent circuit for twin slot terahertz receivers

Series-fed coplanar waveguide embedding circuits are being developed for terahertz mixers using, in particular, submicron-sized superconducting devices, such as hot electron bolometers as the nonlinear element. Although these mixers show promising performance, they usually also show a considerable downward shift in the center frequency, when compared with simulations obtained by using simplified models. This makes it very difficult to design low-noise mixers for a given THz frequency. This shiftis principally caused by parasitics due to the extremely small details (in terms of wavelength) of the device, and by the electrical properties of the RF choke filter in the DC/IF line. In this paper, we present an improved equivalent network model of such mixer circuits which agrees with measured results at THz frequencies and we propose a new set of THz bolometric mixers that have been fabricated and are currently being tested.

HEB slot antennas CPW↗
NASA NTRS2004

Accurate electromagnetic modeling of terahertz detectors

Twin slot antennas coupled to superconducting devices have been developed over the years as single pixel detectors in the terahertz (THz) frequency range for space-based and astronomy applications. Used either for mixing or direct detection, they have been object of several investigations, and are currently being developed for several missions funded or co-funded by NASA. Although they have shown promising performance in terms of noise and sensitivity, so far they have usually also shown a considerable disagreement in terms of performance between calculations and measurements, especially when considering center frequency and bandwidth. In this paper we present a thorough and accurate electromagnetic model of complete detector and we compare the results of calculations with measurements. Starting from a model of the embedding circuit, the effect of all the other elements in the detector in the coupled power have been analyzed. An extensive variety of measured and calculated data, as presented in this paper, demonstrates the effectiveness and reliability of the electromagnetic model at frequencies between 600 GHz and 2.5THz.

Hot Electron Bolometer (HEB)↗