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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Utilizing HYSPLIT for Emergency Response Modeling at SRS

The threat of a disaster happening at the Savannah River Site (SRS) is low, but not zero. When an emergency arises, emergency responders utilize a variety of tools to detect, track, and mitigate the disaster. HYSPLIT is a community atmospheric dispersion model that is highly configurable and has been used operationally to simulate particle, chemical, and radionuclide releases. We have developed a preliminary user interface (UI) that configures HYSPLIT to run for a variety of Emergency Action Level (EAL) scenarios at SRS. Using a hypothetical EAL scenario of an accidental release of Pu-238 in H-area and K-area onsite, an analysis was done to show how a preliminary UI framework allows HYSPLIT to be run on a terminal without the need form an active network connection. The study was successful in multiple aspects. For the preliminary UI, users were able to input certain characteristics of the hypothetical EAL such as hours of emission (how long was Pu-238 being released), curies of release, release start time (when does the model run start), and type of radionuclide directly into the terminal. For HYSPLIT, the model was successful in being able to take the UI input, calculate the results from the inputs and output multiple figures of both total volumetric airborne concentrations and surface deposition. We used the Pu-238 Derived Intervention Level (DIL) deposition thresholds for produce, dairy, and beef for visualization of the surface deposition, showing how a release would impact ingestion pathways.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗
DOE OSTI2020

Monolithic 4-Terminal 1.2 kV/20 A 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Integrated JBS Diodes

In this paper, we report successful fabrication of the first large area, monolithic, 1.2 kV 4H-SiC Bi-Directional FETs (BiDFETs) with integrated JBS diodes in a 6-inch commercial foundry for use in matrix converters. The fabricated BiDFETs support high voltage (>1.2 kV) in the first and third quadrants. They exhibit very low on-resistance of 50 mΩ in the on-state in both quadrants when the 20 V gate bias is applied to both gates, allowing conduction of 20 A with 1 V drop. Fully gate voltage controlled output characteristics are also confirmed in both quadrants.

4-Quadrant switch↗
DOE OSTI2020

Distributed Intrusion Detection System using Semantic-based Rules for SCADA in Smart Grid

Cyber-physical system (CPS) security for the smart grid enables secure communication for the SCADA and wide-area measurement system data. Power utilities world-wide use various SCADA protocols, namely DNP3, Modbus, and IEC 61850, for the data exchanges across substation field devices, remote terminal units (RTUs), and control center applications. Adversaries may exploit compromised SCADA protocols for the reconnaissance, data exfiltration, vulnerability assessment, and injection of stealthy cyberattacks to affect power system operation. In this paper, we propose an efficient algorithm to generate robust rule sets. We integrate the rule sets into an intrusion detection system (IDS), which continuously monitors the DNP3 data traffic at a substation network and detects intrusions and anomalies in real-time. To enable CPS-aware wide-area situational awareness, we integrated the methodology into an open-source distributed-IDS (D-IDS) framework. The D-IDS facilitates central monitoring of the detected anomalies from the geographically distributed substations and to the control center. The proposed algorithm provides an optimal solution to detect network intrusions and abnormal behavior. Different types of IDS rules based on packet payload, packet flow, and time threshold are generated. Further, IDS testing and evaluation is performed with a set of rules in different sequences. The detection time is measured for different IDS rules, and the results are plotted. All the experiments are conducted at Power Cyber Lab, Iowa State University, for multiple power grid models. After successful testing and evaluation, knowledge and implementation are transferred to field deployment.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

ScO x rich surface terminations on lanthanide scandate nanoparticles

We report that the lanthanide scandate materials are widely used substrates for thin film growth and the potential applications of the LnScO 3 materials continue to grow with the recent ability to synthesize them as cuboidal faceted nanoparticles. A comprehensive understanding of the surface structure and chemistry of these oxides is essential for their informed application, either as single crystal or high surface area nanoparticle substrates. Here the {100} pseudocubic surfaces of LnScO 3 (Ln = La, Nd, Sm, Gd) nanoparticles were examined with aberration-corrected electron microscopy and higher-level density functional theory to reveal ScO x rich terminations across all investigated surfaces. Mixed terminations of single and double layer nature were observed, indicating the presence of multiple domains at the surface and introducing the possibility of synthetically controlling the surface reconstruction in the future.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Physics of runaway electrons with shattered pellet injection at JET

Runaway electrons (REs) created during tokamak disruptions pose a threat to the reliable operation of future larger machines. Experiments using shattered pellet injection (SPI) have been carried out at the JET tokamak to investigate ways to prevent their generation or suppress them if avoidance is not sufficient. Avoidance is possible if the SPI contains a sufficiently low fraction of high-Z material, or if it is fired early in advance of a disruption prone to runaway generation. These results are consistent with previous similar findings obtained with Massive Gas Injection. Suppression of an already accelerated beam is not efficient using High-Z material, but deuterium leads to harmless terminations without heat loads. This effect is due to the combination of a large magnetohydrodynamic instability scattering REs on a large area and the absence of runaway regeneration during the subsequent current collapse thanks to the flushing of high-Z impurities from the runaway companion plasma. This effect also works in situations where the runaway beam moves upwards and undergoes scraping-off on the wall.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Selective area doping of GaN toward high-power applications

Abstract Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors, junction termination extensions, junction barrier Schottky diodes, junction field-effect transistors (JFETs), vertical-channel JFETs, U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

Physics↗
DOE OSTI2021

Design principles of tandem cascade photoelectrochemical devices

Cascade photoelectrocatalysis (PEC) is a possible method to improve the selectivity of solar-driven CO 2 reduction (CO 2 R). This concept can be realized by coupling different CO 2 R catalysts to different subcells in a multijunction photovoltaic (PV) stack. Efficient implementation will require careful tuning of the photocurrents and design of the photovoltages provided by the subcells to the CO 2 R catalysts in such a way as to facilitate the target reaction. Here, we outline the design principles of the tandem PEC approach using two-step conversion of CO 2 to ethylene in aqueous electrolyte, via a CO intermediate, as a model system. To perform this reaction, the first coupled PV-catalyst component should provide 4 electrons to reduce 2 molecules of CO 2 to CO; the second component should provide 8 electrons to reduce 2 CO molecules to C 2 H 4 . Based on known CO 2 R catalysts, the overpotential required to produce CO can be less than that required to reduce it to ethylene, creating the opportunity for improved efficiency. Cascade PEC can be realized in a three-terminal tandem (3TT) configuration using III–V-semiconductor based subcells coupled to Au (produces CO intermediate) and Cu (converts CO to ethylene). The current to each catalyst can be controlled by the area of the subcell exposed to the electrolyte, and the photovoltage is determined by the materials selected and device configuration. Operating conditions are found by simulating the coupled system using the open-source circuit simulator SPICE (Simulation Program with Integrated Circuits Emphasis). We identify conditions under which a 3TT configuration can have a higher solar to chemical conversion efficiency compared to a two-terminal two-junction tandem (2T 2J) with the same absorbers and a Cu catalyst only. We also show that 3TT PEC devices can be less sensitive to variations in catalyst activity compared to 2T devices. Lastly, we discuss the applications of cascade PEC to CO 2 reduction, using different intermediates, and to other chemical networks.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

The lowdown on breakdown: Open questions in plant proteolysis

Abstract Proteolysis, including post-translational proteolytic processing as well as protein degradation and amino acid recycling, is an essential component of the growth and development of living organisms. In this article, experts in plant proteolysis pose and discuss compelling open questions in their areas of research. Topics covered include the role of proteolysis in the cell cycle, DNA damage response, mitochondrial function, the generation of N-terminal signals (degrons) that mark many proteins for degradation (N-terminal acetylation, the Arg/N-degron pathway, and the chloroplast N-degron pathway), developmental and metabolic signaling (photomorphogenesis, abscisic acid and strigolactone signaling, sugar metabolism, and postharvest regulation), plant responses to environmental signals (endoplasmic-reticulum-associated degradation, chloroplast-associated degradation, drought tolerance, and the growth-defense trade-off), and the functional diversification of peptidases. We hope these thought-provoking discussions help to stimulate further research.

Eckardt, Nancy A. (ORCID:0000000316581412)↗
DOE OSTI2022

Y(III) Sorption at the Orthoclase (001) Surface Measured by X-ray Reflectivity

Interactions of heavy metals with charged mineral surfaces control their mobility in the environment. Here, we investigate the adsorption of Y(III) onto the orthoclase (001) basal plane, the former as a representative of rare earth elements and an analogue of trivalent actinides and the latter as a representative of naturally abundant K-feldspar minerals. In this study, we apply in situ high-resolution X-ray reflectivity to determine the sorption capacity and molecular distribution of adsorbed Y species as a function of the Y 3+ concentration, [Y 3+ ], at pH 7 and 5. With [Y 3+ ] ≥ 1 mM at pH 7, we observe an inner-sphere (IS) sorption complex at a distance of ~1.5 Å from the surface and an outer-sphere (OS) complex at 3–4 Å. Based on the adsorption height of the IS complex, a bidentate, binuclear binding mode, in which Y 3+ binds to two terminal oxygens, is proposed. In contrast, mostly OS sorption is observed at pH 5. The observed maximum Y coverage is ~1.3 Y 3+ /A UC (A UC : area of the unit cell = 111.4 Å 2 ) for all the investigated pH values and Y concentrations, which is in the expected range based on the estimated surface charge of orthoclase (001).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Black Phosphorus for Mid-Infrared Optoelectronics: Photophysics, Scalable Processing, and Device Applications

High efficiency mid-infrared (λ = 3-8 μm) light emitters and photodetectors are pivotal for advancing next-generation optoelectronics. However, narrow-bandgap semiconductors face fundamental challenges such as pronounced nonradiative carrier recombination and thermally generated noise, which impede device performance. Recently, two-dimensional layered black phosphorus (BP) and its alloys have attracted substantial interest for mid-infrared device applications, demonstrating superior performance relative to conventional III-V and II-VI semiconductors with similar bandgaps. In this review, we discuss the optical properties of BP, contrasting these with those of covalent compounds. Owing to its inherently self-terminated surface structure and reduced nonradiative recombination, BP exhibits high performance in light emission and photodetection at room temperature. Furthermore, this review highlights recent advances in the large-area processing of BP thin films, paving the way for practical device applications and integration. Finally, we explore ongoing challenges and emerging opportunities in the utilization of BP for functional mid-infrared devices.

Higashitarumizu, Naoki↗
DOE OSTI2023

Temperature Uncertainty Modeling with Proxy Structural Data as Geostatistical Constraints for Well Siting: An Example Applied to Granite Springs Valley, NV, USA

Utilizing existing temperature and structural information around Granite Springs Valley, Nevada, we build 3D stochastic temperature models with the aim of evaluating the 3D uncertainty of temperature and choosing between candidate exploration well locations . The data used to support the modeling are measured temperatures and structural proxies from 3D geologic modeling, the latter considered "secondary" data. Two stochastic geostatistical techniques are explored for incorporating the structural proxies: cosimulation and local varying mean. With both the cosimulation and local varying mean methods, many equally likely temperature models (i.e., realizations) are produced, from which temperature probability profiles are calculated at candidate well locations. To aid in choosing between the candidate locations, two quantities summarize the temperature probabilities: Vprior and entropy. Vprior quantifies the likelihood for economic temperatures at each candidate location, whereas entropy identifies where new information has the most potential to reduce uncertainty. In general, the cosimulation realizations have smoother spatial structure, and extrapolate high temperatures at candidate locations that are located along the direction of the longest spatial correlation, which are down dip from existing temperature logs. The smooth realizations result in tight temperature probability profiles that are easier to interpret, but they have unrealistic temperature reversals in some locations because the cosimulation technique does not enforce a conductive geothermal gradient as a baseline (i.e., linearly increasing temperature with depth). The local varying mean results produce realizations with more realistic geothermal gradients, with temperatures increasing downward since a depth-temperature relationship is included. However, because they have much noisier spatial nature compared to cosimulation, it is harder to interpret the temperature probability profiles. The different local varying mean results allow the geologist to determine which proxy (e.g., dilation versus distance to fault termination) should be used given the specific geothermal system. In general, Vprior from local varying mean results identify locations that are close to high values for the structural proxies: areas with highe r probabilities for higher temperatures. The entropy results identify where uncertainty is greatest and therefore new drilling information could be most useful. Though these techniques provide useful information, even when applied to areas of sparse data, our comp arison of these two techniques demonstrates the need for new geothermal geostatistics techniques that combine the advantages of these two methods and that are tailored to the spatial uncertainty issues inherent in geothermal exploration.

3D temperature modeling↗
DOE OSTI2024

Benign termination of runaway electron beams on ASDEX Upgrade and TCV

Abstract This paper discusses the development of a benign termination scenario for runaway electron (RE) beams on ASDEX Upgrade and TCV. A systematic study revealed that a low electron density (n e ) companion plasma was required to achieve a large MHD instability, which expelled the confined REs over a large wetted area and allowed for the conversion of magnetic energy to radiation. Control of the companion plasma n e was achieved via neutral pressure regulation and was agnostic to material injection method. The neutral pressure required for recombination was found to be dependent on impurity species, quantity and RE current. On TCV,n e increased at neutral pressures above 1 Pa, indicating that higher collisionality between the REs and neutrals may lead to an upper pressure limit. The conversion of magnetic energy to radiated energy was measured on both machines and a decrease in efficiency was observed at high neutral pressure on TCV. The benign termination technique was able to prevent any significant increase in maximum heat flux on AUG from 200 to 600 kA of RE current, highlighting the ability of this approach to handle fully formed RE beams.

Physics↗
DOE OSTI2023

Selective area doping for Mott neuromorphic electronics

The cointegration of artificial neuronal and synaptic devices with homotypic materials and structures can greatly simplify the fabrication of neuromorphic hardware. We demonstrate experimental realization of vanadium dioxide (VO 2 ) artificial neurons and synapses on the same substrate through selective area carrier doping. By locally configuring pairs of catalytic and inert electrodes that enable nanoscale control over carrier density, volatility or nonvolatility can be appropriately assigned to each two-terminal Mott memory device per lithographic design, and both neuron- and synapse-like devices are successfully integrated on a single chip. Feedforward excitation and inhibition neural motifs are demonstrated at hardware level, followed by simulation of network-level handwritten digit and fashion product recognition tasks with experimental characteristics. Spatially selective electron doping opens up previously unidentified avenues for integration of emerging correlated semiconductors in electronic device technologies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Sequential multidimensional heteroepitaxy of chalcogen-sharing 3D ZnSe and 2D MoSe 2 with quasi van der Waals interface engineering

Two-dimensional (2D) materials are emerging as a promising platform for epitaxial growth, largely free from the constraints of lattice constant and thermal expansion coefficient mismatches. Among them, transition metal dichalcogenides (TMDs), known for their superior electrical properties, are ideal for ultrathin semiconductor applications. Their unique epitaxial characteristics enable seamless integration with 3D materials, facilitating the development of gate stacks and heterojunction devices. In this regard, developing a process for growing high-quality 3D epitaxial materials before and after the growth of 2D TMDs and understanding the 2D/3D interface are crucial. This study demonstrates the sequential growth of fully epitaxial ZnSe/MoSe 2 /ZnSe heterostructures using metal-organic chemical vapor deposition. ZnSe and MoSe 2 , sharing chalcogen elements, enable large-area quasi van der Waals epitaxy with sharp interfaces without intermediate phase. Multiscale analysis involving transmission electron microscopy and density functional theory calculation reveals lattice commensurability, van der Waals gaps, termination, and interfacial reconstruction. Understanding these interactions is crucial for advancing multidimensional integration of 2D and 3D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Temperature uncertainty modelling with proxy structural data as geostatistical constraints for well siting: an example applied to Granite Springs Valley, NV, USA

Utilizing existing temperature and structural geology information around Granite Springs Valley, Nevada, we build 3D stochastic temperature models with the aims of evaluating the 3D uncertainty of temperature and choosing between candidate exploration well locations. The data used to support the modelling are measured temperatures and structural proxies from 3D geologic modelling (distance to fault, distance to fault intersections and terminations, Coulomb stress change and dilation tendency), the latter considered ‘secondary’ data. Two stochastic geostatistical techniques are explored for incorporating the structural proxies: cosimulation and local varying mean. With both the cosimulation and local varying mean methods, many equally-likely temperature models (i.e. realizations) are produced, from which temperature probability profiles are calculated at candidate well locations. To aid in choosing between the candidate locations, two quantities summarize the temperature probabilities: V prior and entropy. V prior quantifies the likelihood for economic temperatures at each candidate location, whereas entropy identifies where new information has the most potential to reduce uncertainty. In general, the cosimulation realizations have smoother spatial structure, and extrapolate high temperatures at candidate locations that are located along the direction of the longest spatial correlation, which are down dip from existing temperature logs. The smooth realizations result in tight temperature probability profiles that are easier to interpret, but they have unrealistic temperature reversals in some locations because of the dipping ellipsoid shape created and that the cosimulation technique does not enforce a conductive geothermal gradient as a baseline (i.e. linearly increasing temperature with depth). The local varying mean results produce realizations with more realistic geothermal gradients, with temperatures increasing downward since a depth-temperature relationship is included. However, because they have much noisier spatial nature compared to cosimulation, it is harder to interpret the temperature probability profiles. The different local varying mean results allow the geologist to determine which proxy (e.g. dilation v. distance to fault termination) should be used given the specific geothermal system. In general, V prior from local varying mean results identify locations that are close to high values for the structural proxies: areas with higher probabilities for higher temperatures. The entropy results identify where uncertainty is greatest and therefore new drilling information could be most useful. Though these techniques provide useful information, even when applied to areas of sparse data, our comparison of these two techniques demonstrates the need for new geothermal geostatistics techniques that combine the advantages of these two methods and that are tailored to the spatial uncertainty issues inherent in geothermal exploration.

15 GEOTHERMAL ENERGY↗
DOE OSTI2022

High Voltage Regrown GaN P-N Diodes Enabled by Defect and Doping Control

This project studied and implemented methods to form GaN p-n diodes using selective area regrowth to achieve selective area doping. Successful selective area doping of GaN p-n diodes is an enabling factor to realize more advanced devices such as vertical transistors. The general challenge to selective area regrowth of GaN is that the primary etch method, inductively coupled plasma (ICP), damages the crystal and causes high leakage when didoes are formed by regrowth on the etched surface. Our approach used low damage etch methods following ICP etch to remove crystal damage and reduced leakage in the regrown diode. This project demonstrated 1.6 kV etched-and-regrown GaN p-n diodes using planar (non-selective) regrowth and 840 V etched-and-regrown p-n diodes using selective area regrown. Enabling factors were use of a low-damage reactive ion etch (RIE) to remove damage caused by the primary ICP etch combined with a multi-step junction terminal extension (JTE) process. Deep level defect investigation quantitatively correlated a deep level near the middle of the GaN band gap with ICP etch-induced leakage that was greatly mitigated by using a slow, low damage RIE process. This research is economically feasible for commercialization because the processes used in this project, including substrate type and source, epitaxial crystal growth and fabrication techniques are all standard to the GaN semiconductor industry. The fundamental understanding and foundational ability to produce kV-class GaN p-n diodes through etch-and-regrowth provides a path to realize high power, high efficiency GaN power switches that can significantly outperform commercial devices for next-generation electrical power conversion and transmission systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structural Basis of Clostridium perfringens Enterotoxin Activation and Oligomerization by Trypsin

Clostridium perfringens enterotoxin (CpE) is a β-pore forming toxin that disrupts gastrointestinal homeostasis in mammals by binding membrane protein receptors called claudins. Although structures of CpE fragments bound to claudins have been determined, the mechanisms that trigger CpE activation and oligomerization that lead to the formation of cytotoxic β-pores remain undetermined. Proteolysis of CpE in the gut by trypsin has been shown to play a role in this and subsequent cytotoxicity processes. Here, we report solution structures of full-length and trypsinized CpE using small-angle X-ray scattering (SAXS) and crystal structures of trypsinized CpE and its C-terminal claudin-binding domain (cCpE) using X-ray crystallography. Mass spectrometry and SAXS uncover that removal of the CpE N-terminus by trypsin alters the CpE structure to expose areas that are normally unexposed. Crystal structures of trypsinized CpE and cCpE reveal unique dimer interfaces that could serve as oligomerization sites. Moreover, comparisons of these structures to existing ones predict the functional implications of oligomerization in the contexts of cell receptor binding and β-pore formation. This study sheds light on trypsin’s role in altering CpE structure to activate its function via inducing oligomerization on its path toward cytotoxic β-pore formation. Its findings can incite new approaches to inhibit CpE-based cytotoxicity with oligomer-disrupting therapeutics.

59 BASIC BIOLOGICAL SCIENCES↗